CN102439730B - 用于处理晶片的方法和设备 - Google Patents

用于处理晶片的方法和设备 Download PDF

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Publication number
CN102439730B
CN102439730B CN201080020789.7A CN201080020789A CN102439730B CN 102439730 B CN102439730 B CN 102439730B CN 201080020789 A CN201080020789 A CN 201080020789A CN 102439730 B CN102439730 B CN 102439730B
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CN
China
Prior art keywords
wafer
coating
coating bath
current
bath
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Active
Application number
CN201080020789.7A
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English (en)
Chinese (zh)
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CN102439730A (zh
Inventor
W.A.莫雷尔
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Gebrueder Schmid GmbH and Co
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Gebrueder Schmid GmbH and Co
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Publication of CN102439730A publication Critical patent/CN102439730A/zh
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/005—Contacting devices
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C25D5/024—Electroplating of selected surface areas using locally applied electromagnetic radiation, e.g. lasers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Sustainable Development (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Non-Insulated Conductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Coating Apparatus (AREA)
CN201080020789.7A 2009-05-13 2010-05-12 用于处理晶片的方法和设备 Active CN102439730B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009022337.1 2009-05-13
DE102009022337A DE102009022337A1 (de) 2009-05-13 2009-05-13 Verfahren und Vorrichtung zur Behandlung eines Substrats
PCT/EP2010/056555 WO2010130786A2 (de) 2009-05-13 2010-05-12 Verfahren und vorrichtung zur behandlung eines wafers

Publications (2)

Publication Number Publication Date
CN102439730A CN102439730A (zh) 2012-05-02
CN102439730B true CN102439730B (zh) 2015-07-15

Family

ID=42979229

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080020789.7A Active CN102439730B (zh) 2009-05-13 2010-05-12 用于处理晶片的方法和设备

Country Status (13)

Country Link
US (1) US20120052611A1 (enExample)
EP (1) EP2430664A2 (enExample)
JP (1) JP2012526914A (enExample)
KR (1) KR20120018155A (enExample)
CN (1) CN102439730B (enExample)
AU (1) AU2010247404A1 (enExample)
CA (1) CA2761459A1 (enExample)
DE (1) DE102009022337A1 (enExample)
IL (1) IL216309A0 (enExample)
MX (1) MX2011011985A (enExample)
SG (1) SG175365A1 (enExample)
TW (1) TW201108449A (enExample)
WO (1) WO2010130786A2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009049565A1 (de) 2009-10-09 2011-04-14 Gebr. Schmid Gmbh & Co. Verfahren und Anlage zur Metallisierung von Siliziumwafern
CN103418530B (zh) * 2013-07-24 2015-12-23 南通大学 异型直接醇类燃料电池管状电极的涂覆方法及电极
CN104555243A (zh) * 2013-10-11 2015-04-29 宁夏琪凯节能设备有限公司 一种节能型胶带运输机
US11791159B2 (en) * 2019-01-17 2023-10-17 Ramesh kumar Harjivan Kakkad Method of fabricating thin, crystalline silicon film and thin film transistors
CN110528041A (zh) * 2019-08-13 2019-12-03 广州兴森快捷电路科技有限公司 用于晶元的电镀加工方法、晶元及线路板

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5833820A (en) * 1997-06-19 1998-11-10 Advanced Micro Devices, Inc. Electroplating apparatus
US6024849A (en) * 1998-05-06 2000-02-15 Ko; Chien-Hsin Conducting roller for an electroplating apparatus
CN101310046A (zh) * 2005-08-03 2008-11-19 吉布尔·施密德有限责任公司 基板的处理设备，尤指基板的电镀设备
WO2009015886A1 (de) * 2007-07-31 2009-02-05 Gebr. Schmid Gmbh & Co. Verfahren zur beschichtung von solarzellen sowie vorrichtung hierfür

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3017079A1 (de) * 1980-05-03 1981-11-05 Thyssen AG vorm. August Thyssen-Hütte, 4100 Duisburg Vorrichtung zum elektroplattieren
GB2188774B (en) * 1986-04-02 1990-10-31 Westinghouse Electric Corp Method of forming a conductive pattern on a semiconductor surface
JPH04314866A (ja) * 1991-04-12 1992-11-06 Hitachi Chem Co Ltd プリント配線板における無電解めっき方法
ES2096008T3 (es) 1991-11-11 1997-03-01 Solar Gmbh Siemens Procedimiento para la generacion de estructuras de electrodos finas.
DE4311173A1 (de) * 1992-04-03 1993-10-07 Siemens Solar Gmbh Verfahren zur stromlosen Abscheidung eines Metalls über einer Halbleiteroberfläche
DE4333426C1 (de) 1993-09-30 1994-12-15 Siemens Solar Gmbh Verfahren zur Metallisierung von Solarzellen aus kristallinem Silizium
JPH08172271A (ja) * 1994-12-15 1996-07-02 Ebara Yuujiraito Kk プリント基板のめっき方法
JPH09246695A (ja) * 1996-03-12 1997-09-19 Katsuya Hiroshige プリント基板等の銅パターンの表面処理方法及び装置
US6130150A (en) * 1999-08-06 2000-10-10 Lucent Technologies, Inc. Method of making a semiconductor device with barrier and conductor protection
JP2002373996A (ja) * 2001-04-11 2002-12-26 Daido Steel Co Ltd 太陽電池セルおよびその製造方法
DE10342512B3 (de) * 2003-09-12 2004-10-28 Atotech Deutschland Gmbh Vorrichtung und Verfahren zum elektrolytischen Behandeln von elektrisch gegeneinander isolierten, elektrisch leitfähigen Strukturen auf Oberflächen von bandförmigem Behandlungsgut
JP2007131940A (ja) * 2005-10-12 2007-05-31 Hitachi Chem Co Ltd 無電解銅めっき方法
DE102006033353B4 (de) * 2006-07-19 2010-11-18 Höllmüller Maschinenbau GmbH Verfahren und Vorrichtung zum Behandeln von flachen, zerbrechlichen Substraten

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5833820A (en) * 1997-06-19 1998-11-10 Advanced Micro Devices, Inc. Electroplating apparatus
US6024849A (en) * 1998-05-06 2000-02-15 Ko; Chien-Hsin Conducting roller for an electroplating apparatus
CN101310046A (zh) * 2005-08-03 2008-11-19 吉布尔·施密德有限责任公司 基板的处理设备，尤指基板的电镀设备
WO2009015886A1 (de) * 2007-07-31 2009-02-05 Gebr. Schmid Gmbh & Co. Verfahren zur beschichtung von solarzellen sowie vorrichtung hierfür

Also Published As

Publication number Publication date
AU2010247404A1 (en) 2011-11-17
US20120052611A1 (en) 2012-03-01
EP2430664A2 (de) 2012-03-21
WO2010130786A3 (de) 2011-07-14
SG175365A1 (en) 2011-11-28
MX2011011985A (es) 2012-02-28
KR20120018155A (ko) 2012-02-29
IL216309A0 (en) 2012-01-31
CN102439730A (zh) 2012-05-02
JP2012526914A (ja) 2012-11-01
TW201108449A (en) 2011-03-01
WO2010130786A2 (de) 2010-11-18
CA2761459A1 (en) 2010-11-18
DE102009022337A1 (de) 2010-11-18

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