JP2012526914A5 - - Google Patents

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Publication number
JP2012526914A5
JP2012526914A5 JP2012510292A JP2012510292A JP2012526914A5 JP 2012526914 A5 JP2012526914 A5 JP 2012526914A5 JP 2012510292 A JP2012510292 A JP 2012510292A JP 2012510292 A JP2012510292 A JP 2012510292A JP 2012526914 A5 JP2012526914 A5 JP 2012526914A5
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JP
Japan
Prior art keywords
wafer
coating solution
coating
region
starting current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012510292A
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English (en)
Japanese (ja)
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JP2012526914A (ja
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Publication date
Priority claimed from DE102009022337A external-priority patent/DE102009022337A1/de
Application filed filed Critical
Publication of JP2012526914A publication Critical patent/JP2012526914A/ja
Publication of JP2012526914A5 publication Critical patent/JP2012526914A5/ja
Pending legal-status Critical Current

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JP2012510292A 2009-05-13 2010-05-12 ウェハを処理する方法及びデバイス Pending JP2012526914A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009022337A DE102009022337A1 (de) 2009-05-13 2009-05-13 Verfahren und Vorrichtung zur Behandlung eines Substrats
DE102009022337.1 2009-05-13
PCT/EP2010/056555 WO2010130786A2 (de) 2009-05-13 2010-05-12 Verfahren und vorrichtung zur behandlung eines wafers

Publications (2)

Publication Number Publication Date
JP2012526914A JP2012526914A (ja) 2012-11-01
JP2012526914A5 true JP2012526914A5 (enExample) 2013-06-27

Family

ID=42979229

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012510292A Pending JP2012526914A (ja) 2009-05-13 2010-05-12 ウェハを処理する方法及びデバイス

Country Status (13)

Country Link
US (1) US20120052611A1 (enExample)
EP (1) EP2430664A2 (enExample)
JP (1) JP2012526914A (enExample)
KR (1) KR20120018155A (enExample)
CN (1) CN102439730B (enExample)
AU (1) AU2010247404A1 (enExample)
CA (1) CA2761459A1 (enExample)
DE (1) DE102009022337A1 (enExample)
IL (1) IL216309A0 (enExample)
MX (1) MX2011011985A (enExample)
SG (1) SG175365A1 (enExample)
TW (1) TW201108449A (enExample)
WO (1) WO2010130786A2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009049565A1 (de) 2009-10-09 2011-04-14 Gebr. Schmid Gmbh & Co. Verfahren und Anlage zur Metallisierung von Siliziumwafern
CN103418530B (zh) * 2013-07-24 2015-12-23 南通大学 异型直接醇类燃料电池管状电极的涂覆方法及电极
CN104555243A (zh) * 2013-10-11 2015-04-29 宁夏琪凯节能设备有限公司 一种节能型胶带运输机
US11791159B2 (en) * 2019-01-17 2023-10-17 Ramesh kumar Harjivan Kakkad Method of fabricating thin, crystalline silicon film and thin film transistors
CN110528041A (zh) * 2019-08-13 2019-12-03 广州兴森快捷电路科技有限公司 用于晶元的电镀加工方法、晶元及线路板

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3017079A1 (de) * 1980-05-03 1981-11-05 Thyssen AG vorm. August Thyssen-Hütte, 4100 Duisburg Vorrichtung zum elektroplattieren
GB2188774B (en) * 1986-04-02 1990-10-31 Westinghouse Electric Corp Method of forming a conductive pattern on a semiconductor surface
JPH04314866A (ja) * 1991-04-12 1992-11-06 Hitachi Chem Co Ltd プリント配線板における無電解めっき方法
EP0542148B1 (de) 1991-11-11 1997-01-22 SIEMENS SOLAR GmbH Verfahren zum Erzeugen feiner Elektrodenstruckturen
DE4311173A1 (de) * 1992-04-03 1993-10-07 Siemens Solar Gmbh Verfahren zur stromlosen Abscheidung eines Metalls über einer Halbleiteroberfläche
DE4333426C1 (de) 1993-09-30 1994-12-15 Siemens Solar Gmbh Verfahren zur Metallisierung von Solarzellen aus kristallinem Silizium
JPH08172271A (ja) * 1994-12-15 1996-07-02 Ebara Yuujiraito Kk プリント基板のめっき方法
JPH09246695A (ja) * 1996-03-12 1997-09-19 Katsuya Hiroshige プリント基板等の銅パターンの表面処理方法及び装置
US5833820A (en) * 1997-06-19 1998-11-10 Advanced Micro Devices, Inc. Electroplating apparatus
TW424807U (en) * 1998-05-06 2001-03-01 Ke Jian Shin Improved structure for rotatory conductive wheel
US6130150A (en) * 1999-08-06 2000-10-10 Lucent Technologies, Inc. Method of making a semiconductor device with barrier and conductor protection
JP2002373996A (ja) * 2001-04-11 2002-12-26 Daido Steel Co Ltd 太陽電池セルおよびその製造方法
DE10342512B3 (de) * 2003-09-12 2004-10-28 Atotech Deutschland Gmbh Vorrichtung und Verfahren zum elektrolytischen Behandeln von elektrisch gegeneinander isolierten, elektrisch leitfähigen Strukturen auf Oberflächen von bandförmigem Behandlungsgut
DE102005038450A1 (de) * 2005-08-03 2007-02-08 Gebr. Schmid Gmbh & Co. Einrichtung zur Behandlung von Substraten, insbesondere zur Galvanisierung von Substraten
JP2007131940A (ja) * 2005-10-12 2007-05-31 Hitachi Chem Co Ltd 無電解銅めっき方法
DE102006033353B4 (de) * 2006-07-19 2010-11-18 Höllmüller Maschinenbau GmbH Verfahren und Vorrichtung zum Behandeln von flachen, zerbrechlichen Substraten
DE102007038120A1 (de) 2007-07-31 2009-02-05 Gebr. Schmid Gmbh & Co. Verfahren zur Beschichtung von Solarzellen sowie Vorrichtung hierfür

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