KR20120018155A - 웨이퍼 처리 방법 및 웨이퍼 처리 장치 - Google Patents
웨이퍼 처리 방법 및 웨이퍼 처리 장치 Download PDFInfo
- Publication number
- KR20120018155A KR20120018155A KR1020117026951A KR20117026951A KR20120018155A KR 20120018155 A KR20120018155 A KR 20120018155A KR 1020117026951 A KR1020117026951 A KR 1020117026951A KR 20117026951 A KR20117026951 A KR 20117026951A KR 20120018155 A KR20120018155 A KR 20120018155A
- Authority
- KR
- South Korea
- Prior art keywords
- wafer
- coating
- coating bath
- bath
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000003672 processing method Methods 0.000 title claims description 5
- 238000000576 coating method Methods 0.000 claims abstract description 106
- 239000011248 coating agent Substances 0.000 claims abstract description 103
- 239000002184 metal Substances 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052802 copper Inorganic materials 0.000 claims abstract description 7
- 239000010949 copper Substances 0.000 claims abstract description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052709 silver Inorganic materials 0.000 claims abstract description 5
- 239000004332 silver Substances 0.000 claims abstract description 5
- 230000008021 deposition Effects 0.000 claims abstract description 4
- 238000004519 manufacturing process Methods 0.000 claims abstract description 4
- 230000004913 activation Effects 0.000 claims abstract 2
- 235000012431 wafers Nutrition 0.000 claims description 86
- 238000000034 method Methods 0.000 claims description 21
- 239000004020 conductor Substances 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000000126 substance Substances 0.000 description 6
- 238000001465 metallisation Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 238000011437 continuous method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/005—Contacting devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/024—Electroplating of selected surface areas using locally applied electromagnetic radiation, e.g. lasers
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Sustainable Development (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- Electroplating Methods And Accessories (AREA)
- Non-Insulated Conductors (AREA)
- Physical Vapour Deposition (AREA)
- Coating Apparatus (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009022337A DE102009022337A1 (de) | 2009-05-13 | 2009-05-13 | Verfahren und Vorrichtung zur Behandlung eines Substrats |
| DE102009022337.1 | 2009-05-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20120018155A true KR20120018155A (ko) | 2012-02-29 |
Family
ID=42979229
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020117026951A Withdrawn KR20120018155A (ko) | 2009-05-13 | 2010-05-12 | 웨이퍼 처리 방법 및 웨이퍼 처리 장치 |
Country Status (13)
| Country | Link |
|---|---|
| US (1) | US20120052611A1 (enExample) |
| EP (1) | EP2430664A2 (enExample) |
| JP (1) | JP2012526914A (enExample) |
| KR (1) | KR20120018155A (enExample) |
| CN (1) | CN102439730B (enExample) |
| AU (1) | AU2010247404A1 (enExample) |
| CA (1) | CA2761459A1 (enExample) |
| DE (1) | DE102009022337A1 (enExample) |
| IL (1) | IL216309A0 (enExample) |
| MX (1) | MX2011011985A (enExample) |
| SG (1) | SG175365A1 (enExample) |
| TW (1) | TW201108449A (enExample) |
| WO (1) | WO2010130786A2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102009049565A1 (de) | 2009-10-09 | 2011-04-14 | Gebr. Schmid Gmbh & Co. | Verfahren und Anlage zur Metallisierung von Siliziumwafern |
| CN103418530B (zh) * | 2013-07-24 | 2015-12-23 | 南通大学 | 异型直接醇类燃料电池管状电极的涂覆方法及电极 |
| CN104555243A (zh) * | 2013-10-11 | 2015-04-29 | 宁夏琪凯节能设备有限公司 | 一种节能型胶带运输机 |
| US11791159B2 (en) * | 2019-01-17 | 2023-10-17 | Ramesh kumar Harjivan Kakkad | Method of fabricating thin, crystalline silicon film and thin film transistors |
| CN110528041A (zh) * | 2019-08-13 | 2019-12-03 | 广州兴森快捷电路科技有限公司 | 用于晶元的电镀加工方法、晶元及线路板 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3017079A1 (de) * | 1980-05-03 | 1981-11-05 | Thyssen AG vorm. August Thyssen-Hütte, 4100 Duisburg | Vorrichtung zum elektroplattieren |
| GB2188774B (en) * | 1986-04-02 | 1990-10-31 | Westinghouse Electric Corp | Method of forming a conductive pattern on a semiconductor surface |
| JPH04314866A (ja) * | 1991-04-12 | 1992-11-06 | Hitachi Chem Co Ltd | プリント配線板における無電解めっき方法 |
| ES2096008T3 (es) | 1991-11-11 | 1997-03-01 | Solar Gmbh Siemens | Procedimiento para la generacion de estructuras de electrodos finas. |
| DE4311173A1 (de) * | 1992-04-03 | 1993-10-07 | Siemens Solar Gmbh | Verfahren zur stromlosen Abscheidung eines Metalls über einer Halbleiteroberfläche |
| DE4333426C1 (de) * | 1993-09-30 | 1994-12-15 | Siemens Solar Gmbh | Verfahren zur Metallisierung von Solarzellen aus kristallinem Silizium |
| JPH08172271A (ja) * | 1994-12-15 | 1996-07-02 | Ebara Yuujiraito Kk | プリント基板のめっき方法 |
| JPH09246695A (ja) * | 1996-03-12 | 1997-09-19 | Katsuya Hiroshige | プリント基板等の銅パターンの表面処理方法及び装置 |
| US5833820A (en) * | 1997-06-19 | 1998-11-10 | Advanced Micro Devices, Inc. | Electroplating apparatus |
| TW424807U (en) * | 1998-05-06 | 2001-03-01 | Ke Jian Shin | Improved structure for rotatory conductive wheel |
| US6130150A (en) * | 1999-08-06 | 2000-10-10 | Lucent Technologies, Inc. | Method of making a semiconductor device with barrier and conductor protection |
| JP2002373996A (ja) * | 2001-04-11 | 2002-12-26 | Daido Steel Co Ltd | 太陽電池セルおよびその製造方法 |
| DE10342512B3 (de) * | 2003-09-12 | 2004-10-28 | Atotech Deutschland Gmbh | Vorrichtung und Verfahren zum elektrolytischen Behandeln von elektrisch gegeneinander isolierten, elektrisch leitfähigen Strukturen auf Oberflächen von bandförmigem Behandlungsgut |
| DE102005038450A1 (de) * | 2005-08-03 | 2007-02-08 | Gebr. Schmid Gmbh & Co. | Einrichtung zur Behandlung von Substraten, insbesondere zur Galvanisierung von Substraten |
| JP2007131940A (ja) * | 2005-10-12 | 2007-05-31 | Hitachi Chem Co Ltd | 無電解銅めっき方法 |
| DE102006033353B4 (de) * | 2006-07-19 | 2010-11-18 | Höllmüller Maschinenbau GmbH | Verfahren und Vorrichtung zum Behandeln von flachen, zerbrechlichen Substraten |
| DE102007038120A1 (de) | 2007-07-31 | 2009-02-05 | Gebr. Schmid Gmbh & Co. | Verfahren zur Beschichtung von Solarzellen sowie Vorrichtung hierfür |
-
2009
- 2009-05-13 DE DE102009022337A patent/DE102009022337A1/de not_active Withdrawn
-
2010
- 2010-05-12 AU AU2010247404A patent/AU2010247404A1/en not_active Abandoned
- 2010-05-12 CA CA2761459A patent/CA2761459A1/en not_active Abandoned
- 2010-05-12 EP EP10720400A patent/EP2430664A2/de not_active Withdrawn
- 2010-05-12 KR KR1020117026951A patent/KR20120018155A/ko not_active Withdrawn
- 2010-05-12 WO PCT/EP2010/056555 patent/WO2010130786A2/de not_active Ceased
- 2010-05-12 CN CN201080020789.7A patent/CN102439730B/zh active Active
- 2010-05-12 JP JP2012510292A patent/JP2012526914A/ja active Pending
- 2010-05-12 SG SG2011078755A patent/SG175365A1/en unknown
- 2010-05-12 MX MX2011011985A patent/MX2011011985A/es not_active Application Discontinuation
- 2010-05-13 TW TW099115342A patent/TW201108449A/zh unknown
-
2011
- 2011-11-10 IL IL216309A patent/IL216309A0/en unknown
- 2011-11-11 US US13/294,569 patent/US20120052611A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| EP2430664A2 (de) | 2012-03-21 |
| IL216309A0 (en) | 2012-01-31 |
| WO2010130786A2 (de) | 2010-11-18 |
| JP2012526914A (ja) | 2012-11-01 |
| CA2761459A1 (en) | 2010-11-18 |
| MX2011011985A (es) | 2012-02-28 |
| DE102009022337A1 (de) | 2010-11-18 |
| CN102439730B (zh) | 2015-07-15 |
| AU2010247404A1 (en) | 2011-11-17 |
| US20120052611A1 (en) | 2012-03-01 |
| WO2010130786A3 (de) | 2011-07-14 |
| CN102439730A (zh) | 2012-05-02 |
| TW201108449A (en) | 2011-03-01 |
| SG175365A1 (en) | 2011-11-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20111111 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |