JP2012515449A5 - - Google Patents
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- Publication number
- JP2012515449A5 JP2012515449A5 JP2011546282A JP2011546282A JP2012515449A5 JP 2012515449 A5 JP2012515449 A5 JP 2012515449A5 JP 2011546282 A JP2011546282 A JP 2011546282A JP 2011546282 A JP2011546282 A JP 2011546282A JP 2012515449 A5 JP2012515449 A5 JP 2012515449A5
- Authority
- JP
- Japan
- Prior art keywords
- coupled
- terminal
- transistor
- memory circuit
- switch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910044991 metal oxide Inorganic materials 0.000 claims description 9
- 150000004706 metal oxides Chemical class 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- 230000000295 complement effect Effects 0.000 claims description 3
- 210000002777 columnar cell Anatomy 0.000 claims description 2
- 238000000034 method Methods 0.000 claims 13
- 235000014676 Phragmites communis Nutrition 0.000 claims 1
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 210000004027 cell Anatomy 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/354,121 US8130538B2 (en) | 2009-01-15 | 2009-01-15 | Non-volatile memory circuit including voltage divider with phase change memory devices |
| US12/354,121 | 2009-01-15 | ||
| PCT/US2010/020327 WO2010083087A1 (en) | 2009-01-15 | 2010-01-07 | Non-volatile memory circuit including voltage divider with phase change memory devices |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012515449A JP2012515449A (ja) | 2012-07-05 |
| JP2012515449A5 true JP2012515449A5 (enExample) | 2013-02-21 |
| JP5688375B2 JP5688375B2 (ja) | 2015-03-25 |
Family
ID=42008611
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011546282A Expired - Fee Related JP5688375B2 (ja) | 2009-01-15 | 2010-01-07 | 相変化メモリデバイスを有する分圧器を含む不揮発性メモリ回路 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8130538B2 (enExample) |
| EP (1) | EP2377128B1 (enExample) |
| JP (1) | JP5688375B2 (enExample) |
| CN (1) | CN102282623B (enExample) |
| WO (1) | WO2010083087A1 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8462577B2 (en) * | 2011-03-18 | 2013-06-11 | Intel Corporation | Single transistor driver for address lines in a phase change memory and switch (PCMS) array |
| US9762246B2 (en) * | 2011-05-20 | 2017-09-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with a storage circuit having an oxide semiconductor |
| KR101699713B1 (ko) | 2011-09-14 | 2017-01-26 | 인텔 코포레이션 | 저항 변화 메모리 소자용 전극 |
| US8649205B2 (en) * | 2012-02-10 | 2014-02-11 | Infineon Technologies Ag | Memory cell, a method for forming a memory cell, and a method for operating a memory cell |
| JP5677339B2 (ja) * | 2012-02-17 | 2015-02-25 | 株式会社東芝 | メモリ回路 |
| GB2502569A (en) | 2012-05-31 | 2013-12-04 | Ibm | Programming of gated phase-change memory cells |
| GB2502568A (en) | 2012-05-31 | 2013-12-04 | Ibm | Memory apparatus with gated phase-change memory cells |
| US9401364B2 (en) * | 2014-09-19 | 2016-07-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic component, and electronic device |
| CN105118528B (zh) | 2015-07-14 | 2017-11-24 | 江苏时代全芯存储科技有限公司 | 非挥发性记忆装置、可编程电路以及内容可定址记忆体 |
| CN105097023B (zh) | 2015-07-22 | 2017-12-12 | 江苏时代全芯存储科技有限公司 | 非挥发性存储单元以及非挥发性存储装置 |
| US9548118B1 (en) * | 2015-09-22 | 2017-01-17 | Arm Ltd. | Method, system and device for complementary non-volatile memory device operation |
| CN111723045B (zh) * | 2020-06-19 | 2023-05-16 | 成都华微电子科技股份有限公司 | 多功能存储电路和集成电路芯片 |
| CN114530176B (zh) * | 2022-04-25 | 2022-07-19 | 中科南京智能技术研究院 | 一种分布式位线补偿数模混合存内计算阵列 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5144582A (en) * | 1990-03-30 | 1992-09-01 | Sgs-Thomson Microelectronics, Inc. | Sram based cell for programmable logic devices |
| US5315177A (en) * | 1993-03-12 | 1994-05-24 | Micron Semiconductor, Inc. | One time programmable fully-testable programmable logic device with zero power and anti-fuse cell architecture |
| KR100479810B1 (ko) * | 2002-12-30 | 2005-03-31 | 주식회사 하이닉스반도체 | 불휘발성 메모리 장치 |
| JP4367281B2 (ja) * | 2004-08-03 | 2009-11-18 | ソニー株式会社 | 演算回路 |
| JP2006108762A (ja) * | 2004-09-30 | 2006-04-20 | Matsushita Electric Ind Co Ltd | 不揮発性論理回路およびその駆動方法 |
| US7262634B2 (en) * | 2005-01-19 | 2007-08-28 | Altera Corporation | Methods of reducing power in programmable logic devices using low voltage swing for routing signals |
| DE102005030143B4 (de) | 2005-06-28 | 2008-10-30 | Qimonda Ag | Speicherelement für eine nichtflüchtige Speicherung unter Verwendung von Widerstandselementen |
| DE102005036066B3 (de) * | 2005-08-01 | 2006-09-21 | Siemens Ag | Bauelement mit einer in ihrer Funktionalität konfigurierbaren Schaltungsanordnung |
| US7511532B2 (en) | 2005-11-03 | 2009-03-31 | Cswitch Corp. | Reconfigurable logic structures |
| KR101182423B1 (ko) * | 2008-12-17 | 2012-09-12 | 한국전자통신연구원 | 상변화 메모리 소자를 이용한 필드프로그래머블 게이트 어레이(ｆｐｇａ)의 프로그래머블 논리 블록 |
-
2009
- 2009-01-15 US US12/354,121 patent/US8130538B2/en not_active Expired - Fee Related
-
2010
- 2010-01-07 JP JP2011546282A patent/JP5688375B2/ja not_active Expired - Fee Related
- 2010-01-07 EP EP10700086.1A patent/EP2377128B1/en not_active Not-in-force
- 2010-01-07 CN CN201080004760.XA patent/CN102282623B/zh not_active Expired - Fee Related
- 2010-01-07 WO PCT/US2010/020327 patent/WO2010083087A1/en not_active Ceased
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