CN102282623B - 包括具有相变存储器件的分压器的非易失存储器电路 - Google Patents

包括具有相变存储器件的分压器的非易失存储器电路 Download PDF

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Publication number
CN102282623B
CN102282623B CN201080004760.XA CN201080004760A CN102282623B CN 102282623 B CN102282623 B CN 102282623B CN 201080004760 A CN201080004760 A CN 201080004760A CN 102282623 B CN102282623 B CN 102282623B
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CN
China
Prior art keywords
coupled
terminal
latch
phase change
transistor
Prior art date
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Expired - Fee Related
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CN201080004760.XA
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English (en)
Chinese (zh)
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CN102282623A (zh
Inventor
P·J·麦克尔赫尼
R·G·斯莫伦
J·C·科斯特洛
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Altera Corp
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Altera Corp
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
    • G11C14/009—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is a resistive RAM element, i.e. programmable resistors, e.g. formed of phase change or chalcogenide material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Logic Circuits (AREA)
  • Read Only Memory (AREA)
CN201080004760.XA 2009-01-15 2010-01-07 包括具有相变存储器件的分压器的非易失存储器电路 Expired - Fee Related CN102282623B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/354,121 US8130538B2 (en) 2009-01-15 2009-01-15 Non-volatile memory circuit including voltage divider with phase change memory devices
US12/354,121 2009-01-15
PCT/US2010/020327 WO2010083087A1 (en) 2009-01-15 2010-01-07 Non-volatile memory circuit including voltage divider with phase change memory devices

Publications (2)

Publication Number Publication Date
CN102282623A CN102282623A (zh) 2011-12-14
CN102282623B true CN102282623B (zh) 2014-10-22

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CN201080004760.XA Expired - Fee Related CN102282623B (zh) 2009-01-15 2010-01-07 包括具有相变存储器件的分压器的非易失存储器电路

Country Status (5)

Country Link
US (1) US8130538B2 (enExample)
EP (1) EP2377128B1 (enExample)
JP (1) JP5688375B2 (enExample)
CN (1) CN102282623B (enExample)
WO (1) WO2010083087A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8462577B2 (en) * 2011-03-18 2013-06-11 Intel Corporation Single transistor driver for address lines in a phase change memory and switch (PCMS) array
US9762246B2 (en) * 2011-05-20 2017-09-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with a storage circuit having an oxide semiconductor
KR101699713B1 (ko) 2011-09-14 2017-01-26 인텔 코포레이션 저항 변화 메모리 소자용 전극
US8649205B2 (en) * 2012-02-10 2014-02-11 Infineon Technologies Ag Memory cell, a method for forming a memory cell, and a method for operating a memory cell
JP5677339B2 (ja) * 2012-02-17 2015-02-25 株式会社東芝 メモリ回路
GB2502569A (en) 2012-05-31 2013-12-04 Ibm Programming of gated phase-change memory cells
GB2502568A (en) 2012-05-31 2013-12-04 Ibm Memory apparatus with gated phase-change memory cells
US9401364B2 (en) * 2014-09-19 2016-07-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
CN105118528B (zh) 2015-07-14 2017-11-24 江苏时代全芯存储科技有限公司 非挥发性记忆装置、可编程电路以及内容可定址记忆体
CN105097023B (zh) 2015-07-22 2017-12-12 江苏时代全芯存储科技有限公司 非挥发性存储单元以及非挥发性存储装置
US9548118B1 (en) * 2015-09-22 2017-01-17 Arm Ltd. Method, system and device for complementary non-volatile memory device operation
CN111723045B (zh) * 2020-06-19 2023-05-16 成都华微电子科技股份有限公司 多功能存储电路和集成电路芯片
CN114530176B (zh) * 2022-04-25 2022-07-19 中科南京智能技术研究院 一种分布式位线补偿数模混合存内计算阵列

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1512591A (zh) * 2002-12-30 2004-07-14 ����ʿ�뵼�����޹�˾ 非易失性存储器件

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5144582A (en) * 1990-03-30 1992-09-01 Sgs-Thomson Microelectronics, Inc. Sram based cell for programmable logic devices
US5315177A (en) * 1993-03-12 1994-05-24 Micron Semiconductor, Inc. One time programmable fully-testable programmable logic device with zero power and anti-fuse cell architecture
JP4367281B2 (ja) * 2004-08-03 2009-11-18 ソニー株式会社 演算回路
JP2006108762A (ja) * 2004-09-30 2006-04-20 Matsushita Electric Ind Co Ltd 不揮発性論理回路およびその駆動方法
US7262634B2 (en) * 2005-01-19 2007-08-28 Altera Corporation Methods of reducing power in programmable logic devices using low voltage swing for routing signals
DE102005030143B4 (de) 2005-06-28 2008-10-30 Qimonda Ag Speicherelement für eine nichtflüchtige Speicherung unter Verwendung von Widerstandselementen
DE102005036066B3 (de) * 2005-08-01 2006-09-21 Siemens Ag Bauelement mit einer in ihrer Funktionalität konfigurierbaren Schaltungsanordnung
US7511532B2 (en) 2005-11-03 2009-03-31 Cswitch Corp. Reconfigurable logic structures
KR101182423B1 (ko) * 2008-12-17 2012-09-12 한국전자통신연구원 상변화 메모리 소자를 이용한 필드프로그래머블 게이트 어레이(ｆｐｇａ)의 프로그래머블 논리 블록

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1512591A (zh) * 2002-12-30 2004-07-14 ����ʿ�뵼�����޹�˾ 非易失性存储器件

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
USRe.36952E 2000.11.14

Also Published As

Publication number Publication date
WO2010083087A1 (en) 2010-07-22
JP5688375B2 (ja) 2015-03-25
US20100177560A1 (en) 2010-07-15
EP2377128B1 (en) 2018-06-20
CN102282623A (zh) 2011-12-14
US8130538B2 (en) 2012-03-06
EP2377128A1 (en) 2011-10-19
JP2012515449A (ja) 2012-07-05

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Granted publication date: 20141022