JP5688375B2 - 相変化メモリデバイスを有する分圧器を含む不揮発性メモリ回路 - Google Patents

相変化メモリデバイスを有する分圧器を含む不揮発性メモリ回路 Download PDF

Info

Publication number
JP5688375B2
JP5688375B2 JP2011546282A JP2011546282A JP5688375B2 JP 5688375 B2 JP5688375 B2 JP 5688375B2 JP 2011546282 A JP2011546282 A JP 2011546282A JP 2011546282 A JP2011546282 A JP 2011546282A JP 5688375 B2 JP5688375 B2 JP 5688375B2
Authority
JP
Japan
Prior art keywords
coupled
memory circuit
terminal
transistor
pcm device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011546282A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012515449A5 (enExample
JP2012515449A (ja
Inventor
ピーター ジェイ． マックエルヘニー，
ピーター ジェイ． マックエルヘニー，
リチャード ジー． スモーレン，
リチャード ジー． スモーレン，
ジョン シー． コステロ，
ジョン シー． コステロ，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Altera Corp
Original Assignee
Altera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Altera Corp filed Critical Altera Corp
Publication of JP2012515449A publication Critical patent/JP2012515449A/ja
Publication of JP2012515449A5 publication Critical patent/JP2012515449A5/ja
Application granted granted Critical
Publication of JP5688375B2 publication Critical patent/JP5688375B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
    • G11C14/009—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is a resistive RAM element, i.e. programmable resistors, e.g. formed of phase change or chalcogenide material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Logic Circuits (AREA)
  • Read Only Memory (AREA)
JP2011546282A 2009-01-15 2010-01-07 相変化メモリデバイスを有する分圧器を含む不揮発性メモリ回路 Expired - Fee Related JP5688375B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/354,121 US8130538B2 (en) 2009-01-15 2009-01-15 Non-volatile memory circuit including voltage divider with phase change memory devices
US12/354,121 2009-01-15
PCT/US2010/020327 WO2010083087A1 (en) 2009-01-15 2010-01-07 Non-volatile memory circuit including voltage divider with phase change memory devices

Publications (3)

Publication Number Publication Date
JP2012515449A JP2012515449A (ja) 2012-07-05
JP2012515449A5 JP2012515449A5 (enExample) 2013-02-21
JP5688375B2 true JP5688375B2 (ja) 2015-03-25

Family

ID=42008611

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011546282A Expired - Fee Related JP5688375B2 (ja) 2009-01-15 2010-01-07 相変化メモリデバイスを有する分圧器を含む不揮発性メモリ回路

Country Status (5)

Country Link
US (1) US8130538B2 (enExample)
EP (1) EP2377128B1 (enExample)
JP (1) JP5688375B2 (enExample)
CN (1) CN102282623B (enExample)
WO (1) WO2010083087A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8462577B2 (en) * 2011-03-18 2013-06-11 Intel Corporation Single transistor driver for address lines in a phase change memory and switch (PCMS) array
US9762246B2 (en) * 2011-05-20 2017-09-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with a storage circuit having an oxide semiconductor
KR101699713B1 (ko) 2011-09-14 2017-01-26 인텔 코포레이션 저항 변화 메모리 소자용 전극
US8649205B2 (en) * 2012-02-10 2014-02-11 Infineon Technologies Ag Memory cell, a method for forming a memory cell, and a method for operating a memory cell
JP5677339B2 (ja) * 2012-02-17 2015-02-25 株式会社東芝 メモリ回路
GB2502569A (en) 2012-05-31 2013-12-04 Ibm Programming of gated phase-change memory cells
GB2502568A (en) 2012-05-31 2013-12-04 Ibm Memory apparatus with gated phase-change memory cells
US9401364B2 (en) * 2014-09-19 2016-07-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
CN105118528B (zh) 2015-07-14 2017-11-24 江苏时代全芯存储科技有限公司 非挥发性记忆装置、可编程电路以及内容可定址记忆体
CN105097023B (zh) 2015-07-22 2017-12-12 江苏时代全芯存储科技有限公司 非挥发性存储单元以及非挥发性存储装置
US9548118B1 (en) * 2015-09-22 2017-01-17 Arm Ltd. Method, system and device for complementary non-volatile memory device operation
CN111723045B (zh) * 2020-06-19 2023-05-16 成都华微电子科技股份有限公司 多功能存储电路和集成电路芯片
CN114530176B (zh) * 2022-04-25 2022-07-19 中科南京智能技术研究院 一种分布式位线补偿数模混合存内计算阵列

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5144582A (en) * 1990-03-30 1992-09-01 Sgs-Thomson Microelectronics, Inc. Sram based cell for programmable logic devices
US5315177A (en) * 1993-03-12 1994-05-24 Micron Semiconductor, Inc. One time programmable fully-testable programmable logic device with zero power and anti-fuse cell architecture
KR100479810B1 (ko) * 2002-12-30 2005-03-31 주식회사 하이닉스반도체 불휘발성 메모리 장치
JP4367281B2 (ja) * 2004-08-03 2009-11-18 ソニー株式会社 演算回路
JP2006108762A (ja) * 2004-09-30 2006-04-20 Matsushita Electric Ind Co Ltd 不揮発性論理回路およびその駆動方法
US7262634B2 (en) * 2005-01-19 2007-08-28 Altera Corporation Methods of reducing power in programmable logic devices using low voltage swing for routing signals
DE102005030143B4 (de) 2005-06-28 2008-10-30 Qimonda Ag Speicherelement für eine nichtflüchtige Speicherung unter Verwendung von Widerstandselementen
DE102005036066B3 (de) * 2005-08-01 2006-09-21 Siemens Ag Bauelement mit einer in ihrer Funktionalität konfigurierbaren Schaltungsanordnung
US7511532B2 (en) 2005-11-03 2009-03-31 Cswitch Corp. Reconfigurable logic structures
KR101182423B1 (ko) * 2008-12-17 2012-09-12 한국전자통신연구원 상변화 메모리 소자를 이용한 필드프로그래머블 게이트 어레이(ｆｐｇａ)의 프로그래머블 논리 블록

Also Published As

Publication number Publication date
WO2010083087A1 (en) 2010-07-22
US20100177560A1 (en) 2010-07-15
EP2377128B1 (en) 2018-06-20
CN102282623B (zh) 2014-10-22
CN102282623A (zh) 2011-12-14
US8130538B2 (en) 2012-03-06
EP2377128A1 (en) 2011-10-19
JP2012515449A (ja) 2012-07-05

Similar Documents

Publication Publication Date Title
JP5688375B2 (ja) 相変化メモリデバイスを有する分圧器を含む不揮発性メモリ回路
US7755389B2 (en) Reconfigurable logic structures
CN102122528B (zh) 将相变存储器并入cmos工艺的非易失性sram单元
JP5092001B2 (ja) 半導体集積回路
US7385838B2 (en) Semiconductor device with a non-erasable memory and/or a nonvolatile memory
US9543957B2 (en) Reconfigurable logic circuit device
TWI463651B (zh) 具有硫化物材料之可程式矩陣陣列
US7046550B1 (en) Cross-point memory architecture with improved selectivity
US7307451B2 (en) Field programmable gate array device
US20070002619A1 (en) Bistable multivibrator with non-volatile state storage
US8264872B2 (en) Column decoder for non-volatile memory devices, in particular of the phase-change type
JP5716372B2 (ja) 不揮発性ラッチ回路および半導体集積回路
US7471554B2 (en) Phase change memory latch
US8045368B2 (en) Phase-change memory device
US8680887B2 (en) Nonvolatile configuration memory
US8633731B1 (en) Programmable integrated circuit with thin-oxide passgates
JP6795103B2 (ja) 不揮発性抵抗スイッチを用いる再構成可能回路
Leong et al. Nonvolatile configurable logic block for FPGAs

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121227

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20121227

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140228

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140306

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150105

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150126

R150 Certificate of patent or registration of utility model

Ref document number: 5688375

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees