JP2012515441A - オプトエレクトロニクス素子の製造方法およびオプトエレクトロニクス素子 - Google Patents

オプトエレクトロニクス素子の製造方法およびオプトエレクトロニクス素子 Download PDF

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Publication number
JP2012515441A
JP2012515441A JP2011545619A JP2011545619A JP2012515441A JP 2012515441 A JP2012515441 A JP 2012515441A JP 2011545619 A JP2011545619 A JP 2011545619A JP 2011545619 A JP2011545619 A JP 2011545619A JP 2012515441 A JP2012515441 A JP 2012515441A
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Prior art keywords
metal layer
carrier
optical component
optoelectronic
semiconductor chip
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JP2011545619A
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Japanese (ja)
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JP2012515441A5 (enExample
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パトリック ニンツ
ヘルベルト ブルーナー
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Publication of JP2012515441A publication Critical patent/JP2012515441A/ja
Publication of JP2012515441A5 publication Critical patent/JP2012515441A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
JP2011545619A 2009-01-15 2009-11-02 オプトエレクトロニクス素子の製造方法およびオプトエレクトロニクス素子 Pending JP2012515441A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009004724.7 2009-01-15
DE102009004724A DE102009004724A1 (de) 2009-01-15 2009-01-15 Verfahren zur Herstellung eines optoelektronischen Bauteils und optoelektronisches Bauteil
PCT/DE2009/001549 WO2010081445A1 (de) 2009-01-15 2009-11-02 Verfahren zur herstellung eines optoelektronischen bauteils und optoelektronisches bauteil

Publications (2)

Publication Number Publication Date
JP2012515441A true JP2012515441A (ja) 2012-07-05
JP2012515441A5 JP2012515441A5 (enExample) 2012-11-08

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JP2011545619A Pending JP2012515441A (ja) 2009-01-15 2009-11-02 オプトエレクトロニクス素子の製造方法およびオプトエレクトロニクス素子

Country Status (7)

Country Link
US (1) US8450847B2 (enExample)
EP (1) EP2377172A1 (enExample)
JP (1) JP2012515441A (enExample)
KR (1) KR20110118765A (enExample)
CN (1) CN102282686A (enExample)
DE (1) DE102009004724A1 (enExample)
WO (1) WO2010081445A1 (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5877487B1 (ja) * 2014-12-26 2016-03-08 パナソニックＩｐマネジメント株式会社 発光装置
JP2016127249A (ja) * 2015-01-13 2016-07-11 パナソニックＩｐマネジメント株式会社 発光装置及びその製造方法
JP2016219505A (ja) * 2015-05-15 2016-12-22 パナソニックＩｐマネジメント株式会社 発光装置
JP2017523602A (ja) * 2014-06-12 2017-08-17 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ オプトエレクトロニクス半導体装置、オプトエレクトロニクス半導体装置の製造方法、およびオプトエレクトロニクス半導体装置を備えた光源
JP2018018756A (ja) * 2016-07-29 2018-02-01 エルジー ディスプレイ カンパニー リミテッド 表示装置の製造方法および製造装置
US10082271B2 (en) 2016-06-29 2018-09-25 Nichia Corporation Laser light optical module utilizing reflective films for improved efficiency

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011114641B4 (de) * 2011-09-30 2021-08-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
KR101849223B1 (ko) * 2012-01-17 2018-04-17 삼성전자주식회사 반도체 패키지 및 그 제조 방법
EP2703597A1 (en) * 2012-09-03 2014-03-05 Geoservices Equipements Method of calibration for the use in a process of determining the content of a plurality of compounds contained in a drilling fluid
EP3449538B1 (en) * 2016-04-29 2022-11-23 Finisar Corporation Interfacing chip on glass assembly
JP7408266B2 (ja) 2017-06-14 2024-01-05 日亜化学工業株式会社 光源装置
CN113067248A (zh) * 2019-12-31 2021-07-02 深圳市中光工业技术研究院 激光封装结构
CN111477693A (zh) * 2020-04-27 2020-07-31 深圳市灵明光子科技有限公司 光学芯片封装结构及其封装方法、光电装置

Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001067918A (ja) * 1999-08-27 2001-03-16 Matsushita Electronics Industry Corp 面発光装置
JP2001308301A (ja) * 2000-04-19 2001-11-02 Sony Corp 固体撮像装置とその製造方法
JP2001332803A (ja) * 2000-05-23 2001-11-30 Minolta Co Ltd 光集積モジュールの製造方法および製造装置
JP2003008071A (ja) * 2001-06-22 2003-01-10 Stanley Electric Co Ltd Ｌｅｄ基板アセンブリを使用したｌｅｄランプ
JP2004014993A (ja) * 2002-06-11 2004-01-15 Seiko Epson Corp 面発光型発光素子およびその製造方法、面発光型発光素子の実装構造、光モジュール、光伝達装置
JP2005051184A (ja) * 2003-07-31 2005-02-24 Matsushita Electric Ind Co Ltd プリント配線板、照明装置およびプリント配線板の製造方法
JP2005274560A (ja) * 2004-02-27 2005-10-06 Fuji Electric Holdings Co Ltd 放射線検出器用フィルタの実装方法
JP2005537473A (ja) * 2002-09-02 2005-12-08 キネティック リミテッド 密封封止
JP2007109357A (ja) * 2005-10-17 2007-04-26 Matsushita Electric Ind Co Ltd 多波長レーザモジュールおよびその製造方法
JP2007180227A (ja) * 2005-12-27 2007-07-12 Toshiba Corp 光半導体装置およびその製造方法
JP2007206336A (ja) * 2006-02-01 2007-08-16 Seiko Epson Corp 光モジュールおよびその製造方法
WO2007094221A1 (ja) * 2006-02-16 2007-08-23 Tokuyama Corporation リード内蔵メタライズドセラミックス基板およびパッケージ
JP2007227935A (ja) * 2006-02-24 2007-09-06 Osram Opto Semiconductors Gmbh 電子モジュールおよび電子モジュールをカプセル化する方法
JP2007287967A (ja) * 2006-04-18 2007-11-01 Shinko Electric Ind Co Ltd 電子部品装置
JP2007324608A (ja) * 2006-05-31 2007-12-13 Philips Lumileds Lightng Co Llc 波長変換部材の変更による色管理
JP2008191349A (ja) * 2007-02-05 2008-08-21 Yazaki Corp 光通信モジュールの製造方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3107285A1 (de) * 1981-02-26 1983-11-24 Elwex Ltd., White Mill North, Wexford "leuchte"
US4935856A (en) * 1989-10-05 1990-06-19 Dialight Corporation Surface mounted LED package
US5223672A (en) 1990-06-11 1993-06-29 Trw Inc. Hermetically sealed aluminum package for hybrid microcircuits
US6429583B1 (en) * 1998-11-30 2002-08-06 General Electric Company Light emitting device with ba2mgsi2o7:eu2+, ba2sio4:eu2+, or (srxcay ba1-x-y)(a1zga1-z)2sr:eu2+phosphors
US6555288B1 (en) * 1999-06-21 2003-04-29 Corning Incorporated Optical devices made from radiation curable fluorinated compositions
US6395124B1 (en) * 1999-07-30 2002-05-28 3M Innovative Properties Company Method of producing a laminated structure
WO2001045182A1 (en) * 1999-12-17 2001-06-21 Institute Of Materials Research & Engineering Improved transparent electrode material for quality enhancement of oled devices
US6384473B1 (en) * 2000-05-16 2002-05-07 Sandia Corporation Microelectronic device package with an integral window
US6607286B2 (en) 2001-05-04 2003-08-19 Lumileds Lighting, U.S., Llc Lens and lens cap with sawtooth portion for light emitting diode
JP2003100921A (ja) * 2001-09-25 2003-04-04 Kyocera Corp 光半導体素子収納用容器
US20060191215A1 (en) * 2002-03-22 2006-08-31 Stark David H Insulated glazing units and methods
US6803159B2 (en) * 2002-03-28 2004-10-12 Intel Corporation Method of keeping contaminants away from a mask with electrostatic forces
DE10329366B4 (de) * 2003-03-31 2005-06-02 Osram Opto Semiconductors Gmbh Bauelement, insbesondere Anzeigevorrichtung mit organischen Leuchtdioden
JP2004303733A (ja) 2003-03-31 2004-10-28 Osram Opto Semiconductors Gmbh 構成素子、とりわけ有機発光ダイオードを備える表示装置
DE602004022273D1 (de) * 2003-04-22 2009-09-10 Konica Minolta Opto Inc Abbildungseinrichtung und mobiles endgerät mit dieser abbildungseinrichtung
US7223629B2 (en) * 2003-12-11 2007-05-29 Intel Corporation Method and apparatus for manufacturing a transistor-outline (TO) can having a ceramic header
US20050129372A1 (en) * 2003-12-11 2005-06-16 Tieyu Zheng Method and apparatus for manufacturing a transistor-outline (TO) can having a ceramic header
US8835937B2 (en) 2004-02-20 2014-09-16 Osram Opto Semiconductors Gmbh Optoelectronic component, device comprising a plurality of optoelectronic components, and method for the production of an optoelectronic component
US20060022213A1 (en) * 2004-08-02 2006-02-02 Posamentier Joshua D TO-can heater on flex circuit
DE202004015932U1 (de) * 2004-10-13 2004-12-16 Microelectronic Packaging Dresden Gmbh Abdeckung für optische Sensoren
TWI433344B (zh) * 2004-12-24 2014-04-01 Kyocera Corp 發光裝置及照明裝置
US20080002460A1 (en) * 2006-03-01 2008-01-03 Tessera, Inc. Structure and method of making lidded chips
DE202006006610U1 (de) * 2006-04-25 2006-08-31 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Gehäuse mit einer elektrischen Schaltung
FR2903678B1 (fr) * 2006-07-13 2008-10-24 Commissariat Energie Atomique Microcomposant encapsule equipe d'au moins un getter
TWI317030B (en) * 2006-10-04 2009-11-11 Ind Tech Res Inst An optical interconnection module
FR2906896B1 (fr) * 2006-10-04 2009-01-23 Commissariat Energie Atomique Dispositif de couplage ameliore entre une fibre optique et un guide optique integre sur un substrat.
DE102007004304A1 (de) 2007-01-29 2008-07-31 Osram Opto Semiconductors Gmbh Dünnfilm-Leuchtdioden-Chip und Verfahren zur Herstellung eines Dünnfilm-Leuchtdioden-Chips
DE102008021014A1 (de) * 2008-04-25 2009-10-29 Alcan Technology & Management Ag Vorrichtung mit einer Mehrschichtplatte sowie Licht emittierenden Dioden

Patent Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001067918A (ja) * 1999-08-27 2001-03-16 Matsushita Electronics Industry Corp 面発光装置
JP2001308301A (ja) * 2000-04-19 2001-11-02 Sony Corp 固体撮像装置とその製造方法
JP2001332803A (ja) * 2000-05-23 2001-11-30 Minolta Co Ltd 光集積モジュールの製造方法および製造装置
JP2003008071A (ja) * 2001-06-22 2003-01-10 Stanley Electric Co Ltd Ｌｅｄ基板アセンブリを使用したｌｅｄランプ
JP2004014993A (ja) * 2002-06-11 2004-01-15 Seiko Epson Corp 面発光型発光素子およびその製造方法、面発光型発光素子の実装構造、光モジュール、光伝達装置
JP2005537473A (ja) * 2002-09-02 2005-12-08 キネティック リミテッド 密封封止
JP2005051184A (ja) * 2003-07-31 2005-02-24 Matsushita Electric Ind Co Ltd プリント配線板、照明装置およびプリント配線板の製造方法
JP2005274560A (ja) * 2004-02-27 2005-10-06 Fuji Electric Holdings Co Ltd 放射線検出器用フィルタの実装方法
JP2007109357A (ja) * 2005-10-17 2007-04-26 Matsushita Electric Ind Co Ltd 多波長レーザモジュールおよびその製造方法
JP2007180227A (ja) * 2005-12-27 2007-07-12 Toshiba Corp 光半導体装置およびその製造方法
JP2007206336A (ja) * 2006-02-01 2007-08-16 Seiko Epson Corp 光モジュールおよびその製造方法
WO2007094221A1 (ja) * 2006-02-16 2007-08-23 Tokuyama Corporation リード内蔵メタライズドセラミックス基板およびパッケージ
JP2007227935A (ja) * 2006-02-24 2007-09-06 Osram Opto Semiconductors Gmbh 電子モジュールおよび電子モジュールをカプセル化する方法
JP2007287967A (ja) * 2006-04-18 2007-11-01 Shinko Electric Ind Co Ltd 電子部品装置
JP2007324608A (ja) * 2006-05-31 2007-12-13 Philips Lumileds Lightng Co Llc 波長変換部材の変更による色管理
JP2008191349A (ja) * 2007-02-05 2008-08-21 Yazaki Corp 光通信モジュールの製造方法

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017523602A (ja) * 2014-06-12 2017-08-17 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ オプトエレクトロニクス半導体装置、オプトエレクトロニクス半導体装置の製造方法、およびオプトエレクトロニクス半導体装置を備えた光源
US10505085B2 (en) 2014-06-12 2019-12-10 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor device package with conversion layer and method for producing the same
JP5877487B1 (ja) * 2014-12-26 2016-03-08 パナソニックＩｐマネジメント株式会社 発光装置
WO2016103547A1 (ja) * 2014-12-26 2016-06-30 パナソニックＩｐマネジメント株式会社 発光装置及びその製造方法
JP2016127254A (ja) * 2014-12-26 2016-07-11 パナソニックＩｐマネジメント株式会社 発光装置及びその製造方法
JPWO2016103547A1 (ja) * 2014-12-26 2017-06-08 パナソニックＩｐマネジメント株式会社 発光装置及びその製造方法
US9818923B2 (en) 2014-12-26 2017-11-14 Panasonic Intellectual Property Management Co., Ltd. Light emitting device and method for manufacturing same
JP2016127249A (ja) * 2015-01-13 2016-07-11 パナソニックＩｐマネジメント株式会社 発光装置及びその製造方法
JP2016219505A (ja) * 2015-05-15 2016-12-22 パナソニックＩｐマネジメント株式会社 発光装置
US10082271B2 (en) 2016-06-29 2018-09-25 Nichia Corporation Laser light optical module utilizing reflective films for improved efficiency
JP2018018756A (ja) * 2016-07-29 2018-02-01 エルジー ディスプレイ カンパニー リミテッド 表示装置の製造方法および製造装置

Also Published As

Publication number Publication date
US8450847B2 (en) 2013-05-28
KR20110118765A (ko) 2011-11-01
DE102009004724A1 (de) 2010-07-22
US20110285017A1 (en) 2011-11-24
EP2377172A1 (de) 2011-10-19
CN102282686A (zh) 2011-12-14
WO2010081445A1 (de) 2010-07-22

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