JP2012511106A - 改善されたバリア層の性質を有する薄膜の高速成膜 - Google Patents

改善されたバリア層の性質を有する薄膜の高速成膜 Download PDF

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Publication number
JP2012511106A
JP2012511106A JP2011539778A JP2011539778A JP2012511106A JP 2012511106 A JP2012511106 A JP 2012511106A JP 2011539778 A JP2011539778 A JP 2011539778A JP 2011539778 A JP2011539778 A JP 2011539778A JP 2012511106 A JP2012511106 A JP 2012511106A
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Prior art keywords
substrate
barrier
thin film
less
precursor
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Japanese (ja)
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JP2012511106A5 (https=
Inventor
アール ディッキー エリック
バロー ウィリアム
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Lotus Applied Technology LLC
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Lotus Applied Technology LLC
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Wrappers (AREA)
  • Physical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)
JP2011539778A 2008-12-05 2009-12-07 改善されたバリア層の性質を有する薄膜の高速成膜 Pending JP2012511106A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US12038108P 2008-12-05 2008-12-05
US61/120,381 2008-12-05
US16128709P 2009-03-18 2009-03-18
US61/161,287 2009-03-18
PCT/US2009/067024 WO2010065966A2 (en) 2008-12-05 2009-12-07 High rate deposition of thin films with improved barrier layer properties

Publications (2)

Publication Number Publication Date
JP2012511106A true JP2012511106A (ja) 2012-05-17
JP2012511106A5 JP2012511106A5 (https=) 2013-01-31

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Family Applications (1)

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JP2011539778A Pending JP2012511106A (ja) 2008-12-05 2009-12-07 改善されたバリア層の性質を有する薄膜の高速成膜

Country Status (7)

Country Link
US (1) US20100143710A1 (https=)
EP (1) EP2364380A4 (https=)
JP (1) JP2012511106A (https=)
KR (1) KR20110100618A (https=)
CN (1) CN102239278A (https=)
BR (1) BRPI0922795A2 (https=)
WO (1) WO2010065966A2 (https=)

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JP2013067832A (ja) * 2011-09-22 2013-04-18 Toppan Printing Co Ltd 原子層堆積法によるフレキシブル基板への成膜方法及び成膜装置

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US8637117B2 (en) 2009-10-14 2014-01-28 Lotus Applied Technology, Llc Inhibiting excess precursor transport between separate precursor zones in an atomic layer deposition system
US8637123B2 (en) * 2009-12-29 2014-01-28 Lotus Applied Technology, Llc Oxygen radical generation for radical-enhanced thin film deposition
US9297076B2 (en) * 2010-07-23 2016-03-29 Lotus Applied Technology, Llc Substrate transport mechanism contacting a single side of a flexible web substrate for roll-to-roll thin film deposition
JP5864089B2 (ja) * 2010-08-25 2016-02-17 日亜化学工業株式会社 発光装置の製造方法
WO2012032343A1 (en) 2010-09-07 2012-03-15 Sun Chemical B.V. A carbon dioxide barrier coating
JP5682372B2 (ja) * 2011-02-07 2015-03-11 ソニー株式会社 電池用セパレータ、電池用セパレータの製造方法、電池、電池パックおよび電子機器
WO2012133541A1 (ja) * 2011-03-29 2012-10-04 凸版印刷株式会社 巻き取り成膜装置
BR112014000395A2 (pt) * 2011-07-11 2017-02-14 Lotus Applied Tech Llc películas de barreira de óxido de metal misto e método de deposição de camada atômica para preparar películas de barreira de óxido de metal misto
CN102514280B (zh) * 2011-12-12 2015-02-04 武汉理工大学 一种太阳能选择性吸收涂层的制备方法
KR20140144243A (ko) * 2012-03-23 2014-12-18 피코순 오와이 원자층 증착 방법 및 장치
JP6119745B2 (ja) * 2012-05-31 2017-04-26 凸版印刷株式会社 巻き取り成膜装置
KR101372309B1 (ko) * 2012-08-07 2014-03-13 (주)씨엔원 롤투롤 방식의 원자층 증착 장비 및 원자층 증착 방법
TWI592310B (zh) * 2012-10-18 2017-07-21 凸版印刷股份有限公司 積層體、阻氣薄膜及其製造方法
JP6122136B2 (ja) * 2012-11-30 2017-04-26 エルジー・ケム・リミテッド 膜形成装置
KR101892433B1 (ko) * 2012-12-31 2018-08-30 생-고뱅 퍼포먼스 플라스틱스 코포레이션 유연성 기재 상의 박막 규소질화물 장벽 층들
CN104134756A (zh) 2013-04-30 2014-11-05 成均馆大学校产学协力团 多层封装薄膜
JP2017533995A (ja) * 2014-10-17 2017-11-16 ロータス アプライド テクノロジー エルエルシーＬｏｔｕｓ Ａｐｐｌｉｅｄ Ｔｅｃｈｎｏｌｏｇｙ， Ｌｌｃ 混合酸化バリア膜の高速堆積
US20180135167A1 (en) * 2014-12-19 2018-05-17 Fujifilm Manufacturing Europe B.V. Transparent Sheet Materials
JP5795427B1 (ja) * 2014-12-26 2015-10-14 竹本容器株式会社 被膜付き樹脂容器の製造方法及び樹脂容器被覆装置
CH710826A1 (de) * 2015-03-06 2016-09-15 Fofitec Ag Vorrichtungen und Verfahren zur Abscheidung dünner Schichten auf einer laufenden Folienbahn sowie Folienbahn oder Zuschnitte daraus.
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CN107815665A (zh) * 2016-09-14 2018-03-20 中国科学院上海硅酸盐研究所 一种二氧化钛薄膜及其制备方法和应用
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JP2007098679A (ja) * 2005-09-30 2007-04-19 Dainippon Printing Co Ltd ガスバリアフィルムおよびその製造方法
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BRPI0922795A2 (pt) 2018-05-29
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