JP2012511106A5 - - Google Patents

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Publication number
JP2012511106A5
JP2012511106A5 JP2011539778A JP2011539778A JP2012511106A5 JP 2012511106 A5 JP2012511106 A5 JP 2012511106A5 JP 2011539778 A JP2011539778 A JP 2011539778A JP 2011539778 A JP2011539778 A JP 2011539778A JP 2012511106 A5 JP2012511106 A5 JP 2012511106A5
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JP
Japan
Prior art keywords
substrate
thin film
less
barrier layer
precursor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011539778A
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English (en)
Japanese (ja)
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JP2012511106A (ja
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Publication date
Application filed filed Critical
Priority claimed from PCT/US2009/067024 external-priority patent/WO2010065966A2/en
Publication of JP2012511106A publication Critical patent/JP2012511106A/ja
Publication of JP2012511106A5 publication Critical patent/JP2012511106A5/ja
Pending legal-status Critical Current

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JP2011539778A 2008-12-05 2009-12-07 改善されたバリア層の性質を有する薄膜の高速成膜 Pending JP2012511106A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US12038108P 2008-12-05 2008-12-05
US61/120,381 2008-12-05
US16128709P 2009-03-18 2009-03-18
US61/161,287 2009-03-18
PCT/US2009/067024 WO2010065966A2 (en) 2008-12-05 2009-12-07 High rate deposition of thin films with improved barrier layer properties

Publications (2)

Publication Number Publication Date
JP2012511106A JP2012511106A (ja) 2012-05-17
JP2012511106A5 true JP2012511106A5 (https=) 2013-01-31

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011539778A Pending JP2012511106A (ja) 2008-12-05 2009-12-07 改善されたバリア層の性質を有する薄膜の高速成膜

Country Status (7)

Country Link
US (1) US20100143710A1 (https=)
EP (1) EP2364380A4 (https=)
JP (1) JP2012511106A (https=)
KR (1) KR20110100618A (https=)
CN (1) CN102239278A (https=)
BR (1) BRPI0922795A2 (https=)
WO (1) WO2010065966A2 (https=)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2000008B1 (en) 2006-03-26 2011-04-27 Lotus Applied Technology, Llc Atomic layer deposition system and method for coating flexible substrates
US8637117B2 (en) 2009-10-14 2014-01-28 Lotus Applied Technology, Llc Inhibiting excess precursor transport between separate precursor zones in an atomic layer deposition system
US8637123B2 (en) * 2009-12-29 2014-01-28 Lotus Applied Technology, Llc Oxygen radical generation for radical-enhanced thin film deposition
US9297076B2 (en) * 2010-07-23 2016-03-29 Lotus Applied Technology, Llc Substrate transport mechanism contacting a single side of a flexible web substrate for roll-to-roll thin film deposition
JP5864089B2 (ja) * 2010-08-25 2016-02-17 日亜化学工業株式会社 発光装置の製造方法
WO2012032343A1 (en) 2010-09-07 2012-03-15 Sun Chemical B.V. A carbon dioxide barrier coating
JP5682372B2 (ja) * 2011-02-07 2015-03-11 ソニー株式会社 電池用セパレータ、電池用セパレータの製造方法、電池、電池パックおよび電子機器
WO2012133541A1 (ja) * 2011-03-29 2012-10-04 凸版印刷株式会社 巻き取り成膜装置
BR112014000395A2 (pt) * 2011-07-11 2017-02-14 Lotus Applied Tech Llc películas de barreira de óxido de metal misto e método de deposição de camada atômica para preparar películas de barreira de óxido de metal misto
JP5803488B2 (ja) * 2011-09-22 2015-11-04 凸版印刷株式会社 原子層堆積法によるフレキシブル基板への成膜方法及び成膜装置
CN102514280B (zh) * 2011-12-12 2015-02-04 武汉理工大学 一种太阳能选择性吸收涂层的制备方法
KR20140144243A (ko) * 2012-03-23 2014-12-18 피코순 오와이 원자층 증착 방법 및 장치
JP6119745B2 (ja) * 2012-05-31 2017-04-26 凸版印刷株式会社 巻き取り成膜装置
KR101372309B1 (ko) * 2012-08-07 2014-03-13 (주)씨엔원 롤투롤 방식의 원자층 증착 장비 및 원자층 증착 방법
TWI592310B (zh) * 2012-10-18 2017-07-21 凸版印刷股份有限公司 積層體、阻氣薄膜及其製造方法
JP6122136B2 (ja) * 2012-11-30 2017-04-26 エルジー・ケム・リミテッド 膜形成装置
KR101892433B1 (ko) * 2012-12-31 2018-08-30 생-고뱅 퍼포먼스 플라스틱스 코포레이션 유연성 기재 상의 박막 규소질화물 장벽 층들
CN104134756A (zh) 2013-04-30 2014-11-05 成均馆大学校产学协力团 多层封装薄膜
JP2017533995A (ja) * 2014-10-17 2017-11-16 ロータス アプライド テクノロジー エルエルシーＬｏｔｕｓ Ａｐｐｌｉｅｄ Ｔｅｃｈｎｏｌｏｇｙ， Ｌｌｃ 混合酸化バリア膜の高速堆積
US20180135167A1 (en) * 2014-12-19 2018-05-17 Fujifilm Manufacturing Europe B.V. Transparent Sheet Materials
JP5795427B1 (ja) * 2014-12-26 2015-10-14 竹本容器株式会社 被膜付き樹脂容器の製造方法及び樹脂容器被覆装置
CH710826A1 (de) * 2015-03-06 2016-09-15 Fofitec Ag Vorrichtungen und Verfahren zur Abscheidung dünner Schichten auf einer laufenden Folienbahn sowie Folienbahn oder Zuschnitte daraus.
KR101704723B1 (ko) * 2015-04-06 2017-02-09 연세대학교 산학협력단 탄소 박막 소자 및 이의 제조 방법
CN107815665A (zh) * 2016-09-14 2018-03-20 中国科学院上海硅酸盐研究所 一种二氧化钛薄膜及其制备方法和应用
CN106947957A (zh) * 2017-03-01 2017-07-14 秦皇岛博硕光电设备股份有限公司 食品/药品容器的加工方法、食品/药品容器用材料及食品/药品容器
EP3641951B1 (en) 2017-06-22 2023-09-20 The Procter & Gamble Company Films including a water-soluble layer and a vapor-deposited organic coating
US10450119B2 (en) * 2017-06-22 2019-10-22 The Procter & Gamble Company Films including a water-soluble layer and a vapor-deposited inorganic coating
US11987682B2 (en) * 2018-04-12 2024-05-21 Shin-Etsu Chemical Co., Ltd. Photocatalyst transfer film and production method thereof
JP7836994B2 (ja) * 2019-02-20 2026-03-30 パナソニックＩｐマネジメント株式会社 製膜方法、製膜装置および電極箔の製造方法
EP3771751A1 (en) * 2019-08-02 2021-02-03 AR Metallizing N.V. Multi-metal layer wvtr barrier products on water vapour and oxygen permeable bio-based substrates
CN115685301B (zh) * 2023-01-04 2023-04-07 中创智科(绵阳)科技有限公司 一种防爆型氚浓度测量仪
CN117301589A (zh) * 2023-11-02 2023-12-29 江苏思尔德科技有限公司 一种柔性显示用高阻隔膜制备方法

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE393967B (sv) * 1974-11-29 1977-05-31 Sateko Oy Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket
US4389973A (en) * 1980-03-18 1983-06-28 Oy Lohja Ab Apparatus for performing growth of compound thin films
US5256205A (en) * 1990-05-09 1993-10-26 Jet Process Corporation Microwave plasma assisted supersonic gas jet deposition of thin film materials
DE4228853C2 (de) * 1991-09-18 1993-10-21 Schott Glaswerke Optischer Wellenleiter mit einem planaren oder nur geringfügig gewölbten Substrat und Verfahren zu dessen Herstellung sowie Verwendung eines solchen
US5686360A (en) * 1995-11-30 1997-11-11 Motorola Passivation of organic devices
US5817550A (en) * 1996-03-05 1998-10-06 Regents Of The University Of California Method for formation of thin film transistors on plastic substrates
US6342277B1 (en) * 1996-08-16 2002-01-29 Licensee For Microelectronics: Asm America, Inc. Sequential chemical vapor deposition
US5693956A (en) * 1996-07-29 1997-12-02 Motorola Inverted oleds on hard plastic substrate
US6090442A (en) * 1997-04-14 2000-07-18 University Technology Corporation Method of growing films on substrates at room temperatures using catalyzed binary reaction sequence chemistry
US6165554A (en) * 1997-11-12 2000-12-26 Jet Process Corporation Method for hydrogen atom assisted jet vapor deposition for parylene N and other polymeric thin films
US6200893B1 (en) * 1999-03-11 2001-03-13 Genus, Inc Radical-assisted sequential CVD
US6812157B1 (en) * 1999-06-24 2004-11-02 Prasad Narhar Gadgil Apparatus for atomic layer chemical vapor deposition
US20040224504A1 (en) * 2000-06-23 2004-11-11 Gadgil Prasad N. Apparatus and method for plasma enhanced monolayer processing
US6664186B1 (en) * 2000-09-29 2003-12-16 International Business Machines Corporation Method of film deposition, and fabrication of structures
US7476420B2 (en) * 2000-10-23 2009-01-13 Asm International N.V. Process for producing metal oxide films at low temperatures
US6689220B1 (en) * 2000-11-22 2004-02-10 Simplus Systems Corporation Plasma enhanced pulsed layer deposition
KR100421219B1 (ko) * 2001-06-14 2004-03-02 삼성전자주식회사 β-디케톤 리간드를 갖는 유기 금속 착물을 이용한 원자층증착방법
WO2003008110A1 (en) * 2001-07-18 2003-01-30 The Regents Of The University Of Colorado A method of depositing an inorganic film on an organic polymer
US6820570B2 (en) * 2001-08-15 2004-11-23 Nobel Biocare Services Ag Atomic layer deposition reactor
US6794220B2 (en) * 2001-09-05 2004-09-21 Konica Corporation Organic thin-film semiconductor element and manufacturing method for the same
US6932871B2 (en) * 2002-04-16 2005-08-23 Applied Materials, Inc. Multi-station deposition apparatus and method
TWI278532B (en) * 2002-06-23 2007-04-11 Asml Us Inc Method for energy-assisted atomic layer deposition and removal
US6827789B2 (en) * 2002-07-01 2004-12-07 Semigear, Inc. Isolation chamber arrangement for serial processing of semiconductor wafers for the electronic industry
US6797337B2 (en) * 2002-08-19 2004-09-28 Micron Technology, Inc. Method for delivering precursors
US7205662B2 (en) * 2003-02-27 2007-04-17 Symmorphix, Inc. Dielectric barrier layer films
US7294360B2 (en) * 2003-03-31 2007-11-13 Planar Systems, Inc. Conformal coatings for micro-optical elements, and method for making the same
US6888172B2 (en) * 2003-04-11 2005-05-03 Eastman Kodak Company Apparatus and method for encapsulating an OLED formed on a flexible substrate
EP1629543B1 (en) * 2003-05-16 2013-08-07 E.I. Du Pont De Nemours And Company Barrier films for flexible polymer substrates fabricated by atomic layer deposition
US20040261703A1 (en) * 2003-06-27 2004-12-30 Jeffrey D. Chinn Apparatus and method for controlled application of reactive vapors to produce thin films and coatings
US7323231B2 (en) * 2003-10-09 2008-01-29 Micron Technology, Inc. Apparatus and methods for plasma vapor deposition processes
US7074719B2 (en) * 2003-11-28 2006-07-11 International Business Machines Corporation ALD deposition of ruthenium
WO2005074330A1 (en) * 2004-01-28 2005-08-11 Agency For Science, Technology And Research Multicolor organic light emitting devices
US20050221021A1 (en) * 2004-03-31 2005-10-06 Tokyo Electron Limited Method and system for performing atomic layer deposition
US7482037B2 (en) * 2004-08-20 2009-01-27 Micron Technology, Inc. Methods for forming niobium and/or vanadium containing layers using atomic layer deposition
US7399668B2 (en) * 2004-09-30 2008-07-15 3M Innovative Properties Company Method for making electronic devices having a dielectric layer surface treatment
JP5464775B2 (ja) * 2004-11-19 2014-04-09 エイエスエム インターナショナル エヌ．ヴェー． 低温での金属酸化物膜の製造方法
JP4865214B2 (ja) * 2004-12-20 2012-02-01 東京エレクトロン株式会社 成膜方法および記憶媒体
KR100915722B1 (ko) * 2005-06-23 2009-09-04 도쿄엘렉트론가부시키가이샤 반도체 처리 장치용의 구성 부재 및 그 제조 방법, 및반도체 처리 장치
JP2007098679A (ja) * 2005-09-30 2007-04-19 Dainippon Printing Co Ltd ガスバリアフィルムおよびその製造方法
EP2000008B1 (en) * 2006-03-26 2011-04-27 Lotus Applied Technology, Llc Atomic layer deposition system and method for coating flexible substrates
US20070281105A1 (en) * 2006-06-02 2007-12-06 Nima Mokhlesi Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas
US20090110917A1 (en) * 2006-06-05 2009-04-30 John Albaugh Electronic Package and Method of Preparing Same
US20070281089A1 (en) * 2006-06-05 2007-12-06 General Electric Company Systems and methods for roll-to-roll atomic layer deposition on continuously fed objects
US7663312B2 (en) * 2006-07-24 2010-02-16 Munisamy Anandan Flexible OLED light source
WO2008016836A2 (en) * 2006-07-29 2008-02-07 Lotus Applied Technology, Llc Radical-enhanced atomic layer deposition system and method
US20080119098A1 (en) * 2006-11-21 2008-05-22 Igor Palley Atomic layer deposition on fibrous materials
US7781031B2 (en) * 2006-12-06 2010-08-24 General Electric Company Barrier layer, composite article comprising the same, electroactive device, and method
WO2009070574A2 (en) * 2007-11-27 2009-06-04 North Carolina State University Methods for modification of polymers, fibers and textile media
US8945675B2 (en) * 2008-05-29 2015-02-03 Asm International N.V. Methods for forming conductive titanium oxide thin films

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