JP2012508815A - Vapor deposition material supply apparatus and substrate processing apparatus provided with the same - Google Patents

Vapor deposition material supply apparatus and substrate processing apparatus provided with the same Download PDF

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JP2012508815A
JP2012508815A JP2011536246A JP2011536246A JP2012508815A JP 2012508815 A JP2012508815 A JP 2012508815A JP 2011536246 A JP2011536246 A JP 2011536246A JP 2011536246 A JP2011536246 A JP 2011536246A JP 2012508815 A JP2012508815 A JP 2012508815A
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raw material
crucible
vapor deposition
unit
material supply
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JP2011536246A
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JP5406304B2 (en
Inventor
ホ カン,チャン
ク クォン,ヒョン
クァン ソン,ソン
ファ チェ,サン
テ ナムクン,ソン
ロク ハン,キョン
ソク ユン,ヒョン
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エスエヌユー プレシジョン カンパニー,リミテッドSnu Precision Co., Ltd.
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Priority to KR10-2008-0113866 priority Critical
Priority to KR1020080113866A priority patent/KR100926437B1/en
Application filed by エスエヌユー プレシジョン カンパニー,リミテッドSnu Precision Co., Ltd. filed Critical エスエヌユー プレシジョン カンパニー,リミテッドSnu Precision Co., Ltd.
Priority to PCT/KR2009/006671 priority patent/WO2010056057A2/en
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/243Crucibles for source material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/542Controlling the film thickness or evaporation rate
    • C23C14/544Controlling the film thickness or evaporation rate using measurement in the gas phase

Abstract

The present invention relates to a vapor deposition material supply apparatus and a substrate processing apparatus equipped with the same, and more specifically, the organic material is filled in a large volume and stored without alteration, and the organic material is vaporized by a desired amount to form a substrate. The present invention relates to a vapor deposition material supply apparatus that can be supplied to a substrate and a substrate processing apparatus including the same.
The vapor deposition material supply apparatus according to the present invention includes a crucible in which a storage space in which a raw material is filled and a vaporization space in which the raw material is vaporized are formed in a continuous manner, and the raw material filled in the crucible is stored in the storage space. A transport unit that transports continuously or periodically to the vaporization space, and a heat generation unit that is disposed outside the vaporization space formed in the crucible and supplies heat for vaporizing the raw material. In addition, the vapor deposition material supply apparatus according to the present invention further includes a cooling unit that is disposed outside the storage space formed in the crucible and prevents thermal deterioration of the raw material stored in the storage space.
[Selection] Figure 3

Description

  The present invention relates to a vapor deposition material supply apparatus and a substrate processing apparatus equipped with the same, and more specifically, the organic material is filled in a large volume and stored without alteration, and the organic material is vaporized by a desired amount to form a substrate. The present invention relates to a vapor deposition material supply apparatus that can be supplied to a substrate and a substrate processing apparatus including the same.

  Unlike a liquid crystal display device using light emission, an organic light emitting element (Organic Light Emitting Device: OLED) consumes less power because an organic substance emits light and a backlight is not necessary. In addition, since the viewing angle is wide and the response speed is fast, a display device using the viewing angle can realize an excellent image without problems of viewing angle and afterimage.

  Unlike an inorganic material, an organic material used in an organic thin film deposition process for manufacturing an organic light-emitting element does not require a high vapor pressure and is easily decomposed and modified at a high temperature. Due to such characteristics of the organic material, the conventional organic thin film has been deposited on the substrate by charging the organic material into a tungsten crucible, and heating the crucible to vaporize the organic material. However, since there is a limit to the amount of vapor deposition raw material that can be stored in the crucible, there is a problem in that it is necessary to refill the vapor deposition raw material frequently, and the operation of the organic thin film vapor deposition apparatus must be stopped each time. there were. For this reason, a method of increasing the filling amount of the vapor deposition raw material has been proposed in order to extend the operation stop period of the organic thin film vapor deposition apparatus, but the method is used to sublimate the vapor deposition raw material by heating the increased crucible. There is an inconvenience that the vapor deposition material is altered by the heat generation means having a larger amount of heat than required.

  The present invention has been made in order to solve the above-mentioned disadvantages, and the purpose thereof is to fill an organic substance with a large volume to extend the operation stop cycle of the vapor deposition apparatus and to change the quality of the filled organic substance. It is an object of the present invention to provide a vapor deposition material supply apparatus capable of preventing the above and a substrate processing apparatus including the same.

  Another object of the present invention is to provide a vapor deposition material supply apparatus capable of preventing the uneven diffusion of organic material gas by evaporating a filled organic material by a desired amount at an appropriate rate, and the same. It is to provide a substrate processing apparatus.

  In order to achieve the above-described object, a vapor deposition material supply apparatus according to the present invention includes a crucible in which a storage space filled with a raw material and a vaporization space for vaporizing the raw material are formed in a continuous manner, and the crucible A feed unit for continuously or periodically carrying the raw material filled in the storage space from the storage space to the vaporization space, and supplying heat for vaporizing the raw material disposed outside the vaporization space formed in the crucible. A heating unit.

  In addition, the vapor deposition material supply device further includes a cooling unit that is disposed outside a storage space formed in the crucible and prevents thermal deterioration of the raw material material stored in the storage space.

  Furthermore, in the vapor deposition material supply apparatus, the cooling unit is a cooling jacket that surrounds the outer peripheral surface of the crucible and is formed with a cooling channel through which cooling water flows.

  Furthermore, the vapor deposition material supply device has one side connected to the vaporization space side of the crucible and a communication tube that forms a flow path through which the vaporized source material flows, and the other side of the communication tube. And an injector through which the vaporized source material is injected.

  Furthermore, the vapor deposition material supply apparatus further includes a support portion that integrally supports the crucible, the transport unit, and the injector, and the support portion is disposed on a rail that extends in a direction in which the injector faces. Moved along.

  Furthermore, in the vapor deposition material supply apparatus, an engagement member is connected to one side of the communication tube, and the engagement member is screwed to the crucible.

  Furthermore, in the vapor deposition material supply apparatus, the communication tube has a diameter of 20 to 200 mm.

  Furthermore, the vapor deposition material supply device further includes an injection amount measurement sensor for measuring an injection amount of the raw material material from the injector, and the transport unit according to the injection amount of the raw material material measured by the injection amount measurement sensor The amount of injection of the raw material is adjusted by controlling the operation of.

  Furthermore, in the vapor deposition material supply apparatus, a metal sheet is provided on the inner wall of the vaporization space formed in the crucible.

  Furthermore, in the vapor deposition material supply apparatus, the transport unit includes a head that is disposed inside the crucible and pumps the material material, one side is connected to the head, and the other side is disposed outside the crucible. A rod that is installed and moved integrally with the head, and a drive unit that is connected to the other side of the rod and moves the rod.

  Furthermore, in the vapor deposition material supply apparatus, the driving unit is a motor or a hydraulic cylinder.

  Furthermore, in the vapor deposition material supply apparatus, the heat generating unit is a core heater or a lamp heater.

  In order to achieve the above-described object, a substrate processing apparatus according to the present invention includes a chamber in which a reaction space is formed, an organic material supply unit that is provided in the reaction space and supplies a material material to be vaporized, and a substrate. A substrate holder that supports the crucible, and the organic raw material supply unit is filled in the crucible, and a crucible in which a storage space in which the raw material is stored and a vaporization space in which the raw material is vaporized are formed in a continuous manner. A transport unit that continuously or periodically transports the raw material from the storage space to the vaporization space, and heat that is disposed outside the vaporization space formed in the crucible and vaporizes the raw material into the vaporization space. A heat generating unit, one side connected to the vaporization space side of the crucible to form a flow path through which the vaporized raw material flows, and the other side of the communication pipe connected to the substrate holder Comprising a injector for injecting toward the opposite disposed vaporization already raw material substrate.

  The substrate processing apparatus may further include a cooling unit that is disposed outside the storage space formed in the crucible and prevents thermal deterioration of the source material stored in the storage space.

  Further, in the substrate processing apparatus, a large number of reaction spaces are provided in the chamber, and a large number of the organic raw material supply sections are provided in the chamber so as to be respectively disposed in the large number of reaction spaces. The substrate holder is conveyed so as to be arranged to face the respective organic raw material supply units.

  According to the present invention, a vapor deposition material supply device is filled with a large volume of organic material by providing a cooling unit that prevents the organic material from being altered by heat in a storage space where the organic material is filled and stored. As a result, the operation stop cycle of the vapor deposition apparatus can be extended. Thereby, the process efficiency of organic thin film vapor deposition can be improved.

  In addition, according to the present invention, the amount of organic material vaporized is controlled by controlling the heat generating unit that transports the filled organic material to the vaporization space at a desired transport speed and heats the vaporization space. As a result, it is possible to improve the quality of the organic thin film on which the organic material is deposited by preventing non-uniform diffusion of the gas.

FIG. 1 is a schematic configuration diagram showing a system in which a substrate processing apparatus according to the present invention is used. FIG. 2 is a schematic cross-sectional view showing a substrate processing apparatus according to the present invention. FIG. 3 is a schematic cross-sectional view showing a vapor deposition material supply apparatus according to the present invention. FIG. 4 is a cross-sectional view showing a usage state of the vapor deposition material supply apparatus according to the present invention. FIG. 5 is a cross-sectional view showing a usage state of the vapor deposition material supply apparatus according to the present invention.

  Hereinafter, a deposition material supply apparatus and a substrate processing apparatus including the same according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

  However, the present invention is not limited to the embodiments described below, and can be realized in various different forms. These embodiments merely complete the disclosure of the present invention and have ordinary knowledge. It is provided to fully inform those skilled in the art of the scope of the invention.

  FIG. 1 is a schematic configuration diagram illustrating a substrate processing system in which a substrate processing apparatus according to the present invention is used, and FIG. 2 is a schematic cross-sectional view illustrating the substrate processing apparatus according to the present invention.

  As shown in the figure, the substrate processing system will be described on the assumption that it is an in-line method capable of processing a large number of substrates 10 quickly. The substrate processing system includes a carry-in unit 1000 into which a substrate 10 to be processed is carried in, a carry-out unit 5000 that is located away from the carry-in unit 1000 and carries out a processed substrate 10, and a carry-in unit 1000 and a carry-out unit 1000. And a plurality of substrate processing units 3000a to 3000c that are disposed inline with the unit 5000 and process the substrate 10. In addition, the substrate processing system includes a processing preparation unit 2000 that places the substrates 10 placed at the tips of the plurality of substrate processing units 3000a to 3000c and loaded into the substrate processing units 3000a to 3000c on the substrate holder 200 for alignment. The unloading preparation unit 4000 is further provided for removing the substrate 10 from the substrate holder 200 in order to unload the processed substrate 10 disposed at the ends of the substrate processing units 3000a to 3000c to the unloading unit 5000.

  The carry-in unit 1000 is a space where a large number of substrates 10 on which an organic thin film is deposited is placed at an end portion on one side of the substrate processing system, and a large number of substrates 10 are placed in the carry-in unit 1000. A mounted substrate cassette is arranged, and a buffer stage on which the substrate 10 taken out from the cassette stands by for the vapor deposition process is arranged.

  The substrate processing units 3000a to 3000c are spaces that are interposed between the carry-in unit 1000 and the carry-out unit 5000 to deposit an organic thin film, and include a chamber 400 in which at least one reaction space is provided, At least one or more organic raw material supply unit 100 provided corresponding to the reaction space in the chamber 400, and a substrate that is provided so as to be conveyed opposite to the organic raw material supply unit 100 and supports and conveys the substrate 10 A holder 200. In addition, when the single substrate processing units 3000a to 3000c are disposed and the single organic raw material supply unit 100 is disposed, a separate transport rail for transporting the substrate holder 200 is not necessary. However, when a large number of substrate processing units 3000 a to 3000 c are disposed and a large number of organic raw material supply units 100 are disposed, the substrate 10 is arranged along the transport rail 300 in order to face the respective organic raw material supply units 100. Are preferably conveyed. Of course, the method for transporting the substrate holder 200 is not limited to the method using the transport rail, and various transport methods can be adopted as long as they are used by those skilled in the art.

  The chamber 400 is arranged so as to have one or a plurality of reaction spaces. Although not shown, the chamber 400 is provided with a gate through which the substrate 10 and the substrate holder 200 enter and exit, and the chamber 400 is evacuated or exhausted to exhaust unreacted gas and the like inside the chamber 400. A line is formed.

  As the substrate holder 200, any type of holder can be used as long as the substrate 10 is transported while being supported horizontally or vertically. The present invention proposes a holder that holds the periphery of the substrate 10 and supports it vertically. At this time, the substrate holder 200 is transported while being supported and guided by the transport rail 300 provided in the chamber 400.

  Further, an organic material supply unit 100 that supplies an organic material to be deposited on the substrate 10 is disposed at a position facing the substrate holder 200.

  FIG. 3 is a schematic cross-sectional view showing a vapor deposition material supply apparatus according to the present invention. As shown in the figure, the organic raw material supply unit 100 includes a crucible 110 in which a storage space 110a in which a raw material is filled and a vaporization space 110b in which the raw material is vaporized are linearly connected, The material unit filled in the crucible 110 is transported continuously or periodically from the storage space 110a to the vaporization space 110b, and disposed outside the vaporization space 110b formed in the crucible 110, and the vaporization. A heat generating unit 130 that supplies heat for vaporizing the raw material to the space 110b, and a thermal change of the raw material that is disposed outside the storage space 110a formed in the crucible 110 and stored in the storage space 110a is prevented. The cooling unit 140 and one side are connected to the vaporization space 110b side of the crucible 110 to form a flow path through which the vaporized source material flows. Comprises a communication pipe 150, the injector 160 raw material is injected is contacted to the other side of the vaporization already said communication pipe 150.

  The present invention presents an apparatus for manufacturing an organic light emitting device (OLED), and it is preferable that, for example, an organic material is used as a raw material in the present invention.

  The crucible 110 is formed in a cylindrical tube having one side opened. At this time, in the crucible 110, a storage space 110a filled with the source material is formed on the lower side, and a vaporization space 110b in which the source material is vaporized is formed on the upper side. The storage space 110a and the vaporization space 110b are not spaces provided by predetermined installation means but are spaces partitioned according to the state of the raw material. For this reason, a space in which the source material exists in a solid phase or a liquid phase is defined as a storage space 110a, and a space in which the solid or liquid phase source material is vaporized by heat is defined as a vaporization space 110b. At this time, although not shown, the crucible 110 may be connected to a vacuum line for maintaining the inside of the crucible 110 in an ultra-vacuum pressure environment during the vapor deposition process.

  The transport unit 120 is a means for gradually transporting the raw material filled in the storage space 110a of the crucible 110 to the vaporization space 110b. The head 121 is disposed inside the crucible 110 and pumps the raw material, The rod 122 is connected to the head 121, the other side is disposed outside the crucible 110 and moved together with the head 121, and the other side of the rod 122 is connected to the rod 122. And a drive unit to be moved.

  As the drive unit, any one that can move the rod 122 up and down, such as a motor 123 or a hydraulic cylinder, can be used. The present invention employs a motor 123 as a drive unit according to a preferred embodiment. More specifically, the transport unit 120 includes a motor 123 driven by a power source, a ball screw 124 rotated by the motor 123, and a lifting body that moves up and down by the rotation of the ball screw 124 on the ball screw 124. 125, and a support 126 that supports the rod 122 on the other side, the other side being fixed to the lift 125 so as to be moved integrally with the lift 125. For this reason, when the ball screw 124 is rotated by the rotation of the motor 123 and the elevating body 125 moves up and down, the support body 126 is moved integrally with the elevating body 125 and the rod 122 is moved up and down. As a result, the head 121 disposed at the upper end of the rod 122 conveys the source material from the storage space 110a of the crucible 110 to the vaporization space 110b.

  The heat generating unit 130 is a means for supplying thermal energy for heating and vaporizing the raw material conveyed from the storage space 110a of the crucible 110 to the vaporizing space 110b, and is capable of supplying thermal energy for vaporizing the raw material. Anything can be used. For example, a core heater or a lamp heater can be used as the heating unit 130, and in this embodiment, a core heater is used. The heat generating unit 130 is formed by winding a resistance heating wire 131 around the outer peripheral surface of the crucible 110 where the vaporization space is formed. At this time, Ta, W, Mo metal, or alloy wires thereof can be used as the resistance heating wire 131.

  Further, in order to facilitate the heating of the source material by the heat generating unit 130, a metal sheet 111 having high thermal conductivity is disposed on the inner wall of the crucible 110 where the vaporization space 110b is formed. It may be. At this time, the metal sheet 111 is preferably formed in a donut shape or a pipe shape.

  The cooling unit 140 is means for preventing the raw material filled in the storage space 110a of the crucible 110 from being altered by the heat of the heat generating unit 130, and cools the storage space 110a in which the raw material is stored. Anything can be used. For example, in the present embodiment, a cooling jacket is used as the cooling unit 140. The cooling unit 140 is disposed so as to surround a portion of the outer peripheral surface of the crucible 110 where the storage space 110a is formed, preferably a portion adjacent to the portion where the heat generating unit 130 is disposed. The cooling unit 140 is formed by surrounding a cooling flow path 141 through which cooling water flows on the outer peripheral surface of the crucible 110 where the storage space 110a is formed.

  Further, a connecting pipe 150 is connected to the upper part of the crucible 110 to flow the source gas vaporized by the heat generating unit 130 to the injector 160.

  The communication tube 150 may be bent into a predetermined shape so as to be able to communicate with the injector 160. In addition, a heat generation line 151 is disposed on the outer peripheral portion of the communication tube 150 in order to prevent the vaporized source gas from further changing into a liquid phase or a solid phase.

  At this time, the diameter and length of the connecting pipe 150 adversely affects the denaturation of the raw material. More specifically, the denaturation of the source material occurs due to the high temperature and pressure in the crucible 110. For this reason, in order to prevent denaturation of the raw material, it is necessary to keep the temperature and pressure in the crucible 110 low. In addition, since the vaporization temperature of the raw material is affected by the degree of vacuum and the vaporization temperature tends to decrease as the degree of vacuum decreases, it is better to keep the degree of vacuum in the crucible 110 low in order to prevent denaturation of the raw material. More efficient.

  The degree of vacuum in the crucible 110 can be interpreted as a concept of conductance, and the conductance is greatly influenced by the length and diameter of the pipe. Equation 1 below is an equation for calculating conductance.

[Formula 1]
C = 3.81 (T / M) 1/2 D 3 /(L+1.33D)
D: Diameter of piping L: Length of piping T: Temperature M: Molecular weight of raw material

  As apparent from the above equation 1, the conductance tends to increase as the length of the pipe is shorter and the diameter is larger. For this reason, in this embodiment, in order to reduce the degree of vacuum in the crucible 110 and prevent alteration of the raw material, the length of the connecting tube 150 is made as short as possible and the diameter of the connecting tube 150 is increased. Is preferred. In particular, since the conductance value greatly depends on the diameter of the connecting tube 150 rather than the length of the connecting tube 150, in this embodiment, in consideration of the organic material used as the raw material and the temperature in the crucible 110, The diameter of the connecting pipe 150 is 20 to 200 mm. This is because if the diameter of the connecting pipe 150 is 20 mm or less, the conductance is too low to obtain an effect of preventing the raw material from being altered so much, whereas if the diameter of the connecting pipe 150 is 200 mm or more, This is because compatibility with other devices is limited. In particular, the diameter of the connecting pipe 150 is preferably 70 mm in consideration of the efficiency of preventing deterioration of the raw material and compatibility with other devices.

  Further, an engagement member 170 is connected to one side of the communication pipe 150, and a thread is formed on the engagement member 170 and is screwed to the upper end of the crucible 110. At this time, the storage space 110a, the vaporization space 110b, the inside of the engaging member 170, and the inside of the connecting pipe 150 of the crucible 110 are communicated. By engaging the engagement member 170 and the crucible 110 in this manner, the engagement member 170 and the crucible 110 can be easily attached and detached. Thereby, when filling the raw material, after removing the engaging member 170 from the crucible 110, the raw material can be easily filled into the storage space 110a of the crucible 110.

  Further, an injector 160 is connected to the other side of the communication pipe 150.

  The injector 160 has a flow path communicating with the communication pipe 150 therein, and a gas injection port 161 through which the vaporized raw material is injected at an end thereof. At this time, the injector 160 has a linear shape, and the gas injection ports 161 are arranged in a straight line so as to face the substrate 10. An exothermic line 162 is also provided at the outer periphery of the injector 160 in order to prevent the vaporized raw material from further changing into a liquid phase or a solid phase.

  The injector 160 affects the degree of vacuum of the crucible 110 by communicating with the communication pipe 150. For this reason, it is preferable to set the diameter of the injector 160 to 20 to 200 mm, and more preferable to set the diameter of the injector 160 to 70 mm so as to correspond to the connecting pipe 150, for the same reason as that for limiting the diameter of the connecting pipe 150. . In addition, it is preferable to form the diameter of the gas injection port 161 of the injector 160 larger than 8 mm.

  Since the crucible 110, the transport unit 120 and the injector 160 are disposed in the chamber 400, they are integrally supported by a support unit 180. In addition, the support unit 180 is disposed on a rail 185 provided so that the injector 160 is transported toward the substrate 10 in order to adjust the distance between the injector 160 and the substrate 10.

  The support unit 180 supports the movable body 181 moved along the rail 185, a support frame 182 fixed to the movable body 181 and integrally supporting the crucible 110 and the transport unit 120, and the injector 160. And a support plate 183. Of course, the shapes of the movable body 181, the support frame 182, and the support plate 183 are not limited, and any shape and structure that integrally supports the crucible 110, the transport unit 120, and the injector 160 can be adopted. is there. The movable body 181 may be anything as long as it can move on the rail 185. For example, a driving method using a ball screw, a driving method using an LM guide, or the like can be applied.

  Further, an injection amount measurement sensor 184 that measures the injection amount of the vaporized raw material from the injector 160 is disposed in front of the injector 160. Therefore, according to the injection amount of the raw material measured by the injection amount measuring sensor 184, the amount of the raw material vaporized by controlling the heating temperature of the heating unit 130 and the moving speed of the head 121 of the transport unit 120 is determined. Adjust.

  Furthermore, a shutter 190 that selectively restricts the flow of the raw material injected from the injector 160 is interposed in front of the injector 160, preferably between the injector 160 and the substrate holder 200. The shutter 190 is manufactured in a shape having a surface closing the front of the gas injection port 161 formed in the injector 160, and operates by a rotation method or a sliding method. In the present embodiment, a method is proposed in which the shutter 190 is rotated by driving the motor 191 to selectively open and close the front of the injector 160. Of course, the shape and operation method of the shutter 190 are not limited to the above embodiment, and any shutter can be used as long as it can selectively restrict the flow of the raw material injected from the injector 160 onto the substrate 10. It can be adopted.

  Furthermore, as shown in FIG. 1, the unloading unit 5000 is placed on the other end of the substrate processing system and waits for the large number of substrates 10 on which the organic thin film is deposited to be unloaded. An unloader is disposed in the carry-out unit 5000, and the unloader loads a large number of vapor-deposited substrates 10 on a substrate cassette and takes them out.

  The operation state of the substrate processing system to which the vapor deposition material supply apparatus and the substrate processing apparatus according to the present invention having such a configuration are applied will be described.

  4 and 5 are cross-sectional views showing the usage state of the vapor deposition material supply apparatus according to the present invention.

  First, as shown in FIG. 4, after removing the crucible 110 of the vapor deposition material supply device from the engaging member 170, a storage material 110 a inside thereof is filled with a raw material material to be vapor deposited on the substrate 10, that is, an organic material. Then, the crucible 110 and the engaging member 170 are engaged. Here, when many kinds of organic thin films are sequentially stacked, a plurality of substrate processing units 3000a to 3000c are formed correspondingly, and the organic material supply unit 100 is arranged in each of the substrate processing units 3000a to 3000c. After the installation, the crucible 110 is filled with an organic material to be deposited. At this time, the storage space 110a of the crucible 110 is filled with a sufficient amount of an organic substance capable of performing the organic thin film deposition process continuously or periodically. The organic material filled in the storage space 110a can be stored for a long time without being altered by the cooling of the cooling unit 140. It should be noted that the movable body 181 to which the crucible 110 and the injector 160 are fixed is moved to set an interval between the substrate 10 to be processed and the injector 160.

  When the organic raw material supply unit 100 is thus prepared, the substrate 10 prepared in the carry-in unit 1000 is carried into the processing preparation unit 2000, and the substrate 10 is placed on the substrate holder 200 and aligned. The substrate 10 thus prepared is transported by the substrate holder 200 and placed at a position facing the organic material supply unit 100 disposed in each of the substrate processing units 3000a to 3000c.

  When the substrate 10 is transported and placed in front of the organic raw material supply unit 100, preferably in front of the injector 160, the transport unit 120 of the organic raw material supply unit 100 operates to store the crucible 110 as shown in FIG. The organic material filled in the space 110a is transported to the vaporization space 110b. More specifically, as the motor 123 operates and rotates, the ball screw 124 rotates and the elevating body 125 moves up and down. Then, the rod 122 is moved up and down while the support 126 is moved integrally with the elevating body 125, whereby the head 121 disposed at the upper end of the rod 122 moves the raw material from the storage space 110 a of the crucible 110 to the vaporization space 110 b. To transport. Then, the organic substance is vaporized by heating the heat generating unit 130 provided around the vaporization space 110b. At this time, the amount of the organic substance to be vaporized is determined by controlling the heating temperature of the heat generating unit 130 and controlling the transport speed of the head 121 of the transport unit 120. And the organic substance stored in the storage space 110a without reaching the vaporization space 110b is prevented from being altered by cooling of the cooling unit provided around the storage space 110a.

  Thus, the organic substance vaporized by a desired amount in the vaporization space 110b is injected to the outside of the injector 160 through the engagement member 170 and the communication pipe 150 and through the gas injection port 161 formed in the injector 160. Further, by operating the shutter 190 and opening the shutter 190, the organic substance is smoothly ejected. The injected organic material is deposited on the substrate 10 to form an organic thin film on the substrate 10. At this time, the injection amount measurement sensor 184 disposed in front of the injector 160 measures the injection amount of the organic substance from the injector 160, and calculates the measurement amount to calculate the heating temperature of the heat generating unit 130 and the head 121 of the transport unit 120. To control the transport speed.

  If the transport of the substrate 10 is a continuous process, the shutter 190 disposed in front of the injector 160 is always kept open, whereas the transport of the substrate 10 is discontinuous. That is, if the process is performed periodically, it is preferable to operate the shutter 190 so as to be selectively opened or closed.

  When the vapor deposition of the single-layer or multilayer organic thin film is completed through the desired processing unit among the substrate processing units 3000a to 3000c in this way, the substrate 10 is transported to the unloading preparation unit 4000 and removed from the substrate holder 200. The removed substrate 10 is unloaded to the unloading unit 5000, and the multiple unloaded substrates are mounted on a cassette and taken out of the substrate processing system.

  As described above, the substrate processing system according to the present invention has been described on the assumption that it is an in-line method capable of processing a large number of substrates quickly. However, the present invention is not limited to this, and an organic thin film can be deposited. As long as it is, it can be applied to various types of processing systems. In the present invention, the organic thin film is deposited after the substrate and the injector are arranged perpendicular to the ground, and the substrate holder and the organic raw material supply are provided in order to arrange the substrate and the injector parallel to the ground. The portions may be arranged in the horizontal direction. As mentioned above, although this invention was demonstrated based on attached drawing and the suitable embodiment mentioned above, this invention is not limited to this, It is limited by the claim which is mentioned later. Therefore, those who have ordinary knowledge in this technical field can variously modify and modify the present invention without departing from the technical idea of the claims to be described later.

Claims (15)

  1. A crucible in which a storage space in which a raw material is filled and a vaporization space in which the raw material is vaporized are formed in a continuous manner;
    A transport unit for transporting the raw material filled in the crucible continuously or periodically from the storage space to the vaporization space;
    A heat generation unit that is disposed outside the vaporization space formed in the crucible and supplies heat for vaporizing the raw material,
    A vapor deposition material supply apparatus comprising:
  2. The vapor deposition material supply apparatus according to claim 1, further comprising a cooling unit that is disposed outside a storage space formed in the crucible and prevents thermal deterioration of a raw material material stored in the storage space.
  3.   3. The vapor deposition material supply apparatus according to claim 2, wherein the cooling unit is a cooling jacket that surrounds the outer peripheral surface of the crucible and is formed with a cooling channel through which cooling water flows.
  4. One side is connected to the vaporization space side of the crucible and forms a flow path through which the vaporized raw material flows,
    An injector that is connected to the other side of the connecting pipe and injects vaporized raw material;
    The vapor deposition material supply apparatus according to claim 1, further comprising:
  5. Further comprising a support unit that integrally supports the crucible, the transport unit and the injector,
    5. The deposition material supply apparatus according to claim 4, wherein the support unit is disposed on a rail extending in a direction in which the injector faces and is moved along the rail.
  6.   5. The vapor deposition material supply apparatus according to claim 4, wherein an engagement member is connected to one side of the communication pipe, and the engagement member is screwed into the crucible.
  7.   The vapor deposition material supply apparatus according to claim 4, wherein the communication tube has a diameter of 20 to 200 mm.
  8. Further comprising an injection amount measuring sensor for measuring an injection amount of the raw material from the injector;
    5. The vapor deposition material supply apparatus according to claim 4, wherein the injection amount of the raw material is adjusted by controlling the operation of the transport unit according to the injection amount of the raw material measured by the injection amount measuring sensor.
  9.   The vapor deposition material supply apparatus according to claim 1, wherein a metal sheet is provided on an inner wall of a vaporization space formed in the crucible.
  10. The transport unit is
    A head which is disposed inside the crucible and pumps the raw material,
    A rod that is connected to the head on one side and disposed on the outside of the crucible on the other side and moved integrally with the head;
    A drive unit connected to the other side of the rod to move the rod;
    The vapor deposition substance supply apparatus of Claim 1 or Claim 2 provided with these.
  11.   The apparatus of claim 10, wherein the driving unit is a motor or a hydraulic cylinder.
  12.   The deposition material supply apparatus according to claim 1, wherein the heat generating unit is a core heater or a lamp heater.
  13. A chamber in which a reaction space is formed, an organic raw material supply unit that supplies the raw material to be vaporized provided in the reaction space, and a substrate holder that supports the substrate,
    The organic raw material supply unit
    A crucible in which a storage space in which the raw material is stored and a vaporization space in which the raw material is vaporized are formed in a continuous manner;
    A transport unit for continuously or periodically transporting the raw material filled in the crucible from the storage space to the vaporization space;
    A heat generating unit that is disposed outside a vaporization space formed in the crucible and supplies heat for vaporizing a raw material into the vaporization space;
    One side is connected to the vaporization space side of the crucible and forms a flow path through which the vaporized raw material flows,
    An injector connected to the other side of the connecting pipe and disposed opposite to the substrate holder to inject the vaporized raw material toward the substrate;
    A substrate processing apparatus comprising:
  14. The substrate processing apparatus according to claim 13, further comprising: a cooling unit that is disposed outside a storage space formed in the crucible and prevents thermal deterioration of the source material stored in the storage space.
  15. A number of reaction spaces are provided in the chamber,
    A large number of the organic raw material supply units are disposed in the chamber so as to be disposed in the multiple reaction spaces,
    The substrate processing apparatus according to claim 13, wherein the substrate holder is transported so as to be arranged to face each of the organic raw material supply units.
JP2011536246A 2008-11-17 2009-11-13 Vapor deposition material supply apparatus and substrate processing apparatus provided with the same Expired - Fee Related JP5406304B2 (en)

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KR10-2008-0113866 2008-11-17
KR1020080113866A KR100926437B1 (en) 2008-11-17 2008-11-17 Deposition material supply apparatus and Equipment for treating substrate having the same
PCT/KR2009/006671 WO2010056057A2 (en) 2008-11-17 2009-11-13 Deposition material supply apparatus and substrate treatment apparatus having the same

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101422533B1 (en) * 2012-12-04 2014-07-24 주식회사 선익시스템 A Linear Type Evaporator with a Mixing Zone
JP2017500447A (en) * 2013-12-10 2017-01-05 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated Processing apparatus for processing devices, particularly devices containing organic materials therein, and method for transferring an evaporation source from a processing vacuum chamber to a maintenance vacuum chamber or from a maintenance vacuum chamber to a processing vacuum chamber

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101084234B1 (en) * 2009-11-30 2011-11-16 삼성모바일디스플레이주식회사 Deposition source, Deposition apparatus using the same and method for forming thin film
KR101172275B1 (en) * 2009-12-31 2012-08-08 에스엔유 프리시젼 주식회사 Vaporizing apparatus and control method for the same
KR101887856B1 (en) * 2010-04-09 2018-08-10 가부시키가이샤 니콘 Device manufacturing apparatus
JP5674431B2 (en) * 2010-11-17 2015-02-25 株式会社アルバック Thin film forming equipment
JP5797275B2 (en) * 2010-12-13 2015-10-21 ポスコ Continuous coating equipment
KR101233629B1 (en) * 2011-04-13 2013-02-15 에스엔유 프리시젼 주식회사 Large capacity depositing apparatus for forming thin film
KR101052435B1 (en) * 2011-04-13 2011-07-28 에스엔유 프리시젼 주식회사 Depositing apparatus for forming thin film
KR20120116720A (en) * 2011-04-13 2012-10-23 에스엔유 프리시젼 주식회사 Apparatus for supplying materials
KR101320434B1 (en) * 2011-05-12 2013-10-23 에스엔유 프리시젼 주식회사 Apparatus for controlling supply of materials
KR101174633B1 (en) * 2011-05-12 2012-08-17 에스엔유 프리시젼 주식회사 Apparatus for supplying materials
KR101754356B1 (en) * 2011-12-15 2017-07-07 주식회사 원익아이피에스 Evaporating source, deposition material supply apparatus and deposition apparatus comprising the same
KR101418714B1 (en) * 2012-09-13 2014-07-10 주식회사 선익시스템 Evaporation source and Apparatus for deposition having the same
KR101418712B1 (en) 2012-09-14 2014-07-10 주식회사 선익시스템 Evaporation source and Apparatus for deposition having the same
CN106906445B (en) * 2017-03-29 2019-02-12 武汉华星光电技术有限公司 A kind of evaporation source

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020090934A (en) * 2002-08-27 2002-12-05 에이엔 에스 주식회사 Organic material point source feeding unit in organic semiconductor device and method thereof
JP2005097730A (en) * 2003-08-15 2005-04-14 Semiconductor Energy Lab Co Ltd Film-forming apparatus and manufacturing apparatus
JP2005298926A (en) * 2004-04-14 2005-10-27 Hitachi Zosen Corp Vapor deposition system
JP2008007858A (en) * 2006-06-03 2008-01-17 Applied Materials Gmbh & Co Kg Organic evaporator, coating installation, and method for use thereof
JP2008019477A (en) * 2006-07-13 2008-01-31 Canon Inc Vacuum vapor deposition apparatus

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000007858A (en) * 1998-06-18 2000-01-11 Showa Electric Wire & Cable Co Ltd Thermoplastic elastomer composition
KR100647585B1 (en) 2003-10-15 2006-11-17 삼성에스디아이 주식회사 Effusion cell and method for depositing substrate with the effusion cell
KR100659762B1 (en) * 2005-01-17 2006-12-19 삼성에스디아이 주식회사 Vapor deposition source and evaporating apparatus and method for deposition using the same
EP1862564B1 (en) * 2006-06-03 2008-09-03 Applied Materials GmbH & Co. KG Apparatus for the evaporation of materials by means of an evaporator tube

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020090934A (en) * 2002-08-27 2002-12-05 에이엔 에스 주식회사 Organic material point source feeding unit in organic semiconductor device and method thereof
JP2005097730A (en) * 2003-08-15 2005-04-14 Semiconductor Energy Lab Co Ltd Film-forming apparatus and manufacturing apparatus
JP2005298926A (en) * 2004-04-14 2005-10-27 Hitachi Zosen Corp Vapor deposition system
JP2008007858A (en) * 2006-06-03 2008-01-17 Applied Materials Gmbh & Co Kg Organic evaporator, coating installation, and method for use thereof
JP2008019477A (en) * 2006-07-13 2008-01-31 Canon Inc Vacuum vapor deposition apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101422533B1 (en) * 2012-12-04 2014-07-24 주식회사 선익시스템 A Linear Type Evaporator with a Mixing Zone
JP2017500447A (en) * 2013-12-10 2017-01-05 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated Processing apparatus for processing devices, particularly devices containing organic materials therein, and method for transferring an evaporation source from a processing vacuum chamber to a maintenance vacuum chamber or from a maintenance vacuum chamber to a processing vacuum chamber

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JP5406304B2 (en) 2014-02-05
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WO2010056057A3 (en) 2010-07-08
TW201036227A (en) 2010-10-01
KR100926437B1 (en) 2009-11-13
WO2010056057A2 (en) 2010-05-20

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