KR101936308B1 - thin film deposition apparatus - Google Patents

Abstract

The present invention relates to a thin film deposition apparatus, and more particularly, to a thin film deposition apparatus for forming a thin film on a substrate by evaporation of a deposition material.
The present invention provides a vacuum processing apparatus comprising: a vacuum chamber for forming a sealed process space for depositing a thin film on a substrate by evaporation of a deposition material; And at least one evaporation source disposed in the vacuum chamber and evaporating the evaporation material to form a thin film on the substrate-processed surface of the substrate, wherein the evaporation source comprises: a deposition material supplier for supplying the evaporation material in a solid state; A deposition material melting unit for melting the deposition material supplied from the deposition material supply unit; And an evaporation vessel for supplying molten evaporation material from the evaporation material melted portion and heating and evaporating the evaporation material.

Description

[0001] The present invention relates to a thin film deposition apparatus,

The present invention relates to a thin film deposition apparatus, and more particularly, to a thin film deposition apparatus for forming a thin film on a substrate by evaporation of a deposition material.

A flat panel display is typically a liquid crystal display, a plasma display panel, or an organic light emitting diode.

Of these, organic light emitting devices have advantages such as fast response speed, lower power consumption than conventional liquid crystal display devices, high brightness and light weight, and the advantage of being able to be made ultra thin by not requiring a separate back light device And has been attracting attention as a next-generation display device.

As a general method of forming a thin film on a substrate of a flat panel display device, there are evaporation, physical vapor deposition (PVD) such as ion plating and sputtering, And chemical vapor deposition (CVD). Among them, a vapor deposition method can be used for forming a thin film such as an organic material layer, an inorganic material layer, etc. of an organic light emitting device.

Among the methods of forming the thin film on the substrate of the flat panel display device, the evaporation deposition method is performed by a thin film deposition apparatus including a vacuum chamber forming a closed processing space and an evaporation source installed at a lower portion of the vacuum chamber to evaporate the material to be deposited .

Specifically, in the conventional thin film deposition apparatus, a substrate is positioned on the upper side of the evaporation source so that the substrate-treated surface faces the evaporation source, and the evaporation material is evaporated by heating to deposit the thin film on the substrate-processed surface.

Meanwhile, since the conventional thin film deposition apparatus has a limitation on the amount of the deposition material that can be contained in the evaporation vessel, if the evaporation material is exhausted from the evaporation vessel, the operation is stopped and the evaporation vessel is refilled with the evaporation material, After the melting of the material and the evaporation rate of the evaporation material reaches a certain value, the thin film deposition process for the substrate is performed again.

However, as described above, the conventional thin film deposition apparatus requiring the refilling of the evaporation material has a limitation in increasing the processing speed of the substrate due to the operation stoppage and re-operation after the re-filling of the evaporation material.

It is an object of the present invention to provide a thin film deposition apparatus capable of significantly increasing the productivity by increasing the speed of substrate processing by minimizing the time for refilling the deposition material.

It is another object of the present invention to provide a thin film deposition apparatus capable of continuously processing a substrate without continuously stopping the apparatus by continuously supplying the deposition material, thereby increasing the speed of substrate processing and significantly improving the productivity.

SUMMARY OF THE INVENTION The present invention has been made in order to accomplish the above object of the present invention, and it is an object of the present invention to provide a vacuum processing apparatus and a vacuum processing method thereof, which comprises a vacuum chamber for forming a closed process space for depositing a thin film on a substrate by evaporation of an evaporation material; And at least one evaporation source disposed in the vacuum chamber and evaporating the evaporation material to form a thin film on the substrate-processed surface of the substrate, wherein the evaporation source comprises: a deposition material supplier for supplying the evaporation material in a solid state; A deposition material melting unit for melting the deposition material supplied from the deposition material supply unit; And an evaporation vessel for supplying molten evaporation material from the evaporation material melted portion and heating and evaporating the evaporation material.

A melting vessel connected to the evaporation vessel by a connection part to receive the evaporation material and supply the evaporation material to the evaporation vessel; And a heating unit installed in the melting vessel to heat and melt the evaporation material contained in the melting vessel.

Wherein the connecting portion connects the melting vessel and the evaporation vessel at a position lower than a predetermined level of the evaporation material in the evaporation vessel and the melting vessel is injected into the upper portion of the melting vessel, A gas injection pipe may be connected to inject the evaporation material into the evaporation vessel through the connecting portion into the evaporation vessel.

Wherein the connecting portion connects the melting vessel and the evaporation vessel at a position lower than a level of a predetermined evaporation material in the evaporation vessel and the melting vessel is installed on the upper side of the melting vessel, A plunger may be installed to pressurize the deposition material to be injected into the evaporation vessel through the connection portion.

Wherein the connecting portion connects the melting vessel and the evaporation vessel at a position lower than a predetermined level of the evaporation material in the evaporation vessel, and the melting vessel is arranged so that the level of the evaporation material in the evaporation vessel is higher than a predetermined level The deposition material may be supplied from the deposition material supply unit to be melted.

Wherein the connecting portion connects the melting vessel and the evaporation vessel at a position higher than a predetermined level of the evaporation material in the melting vessel, wherein the melting vessel is installed on the upper side of the melting vessel, A plunger may be installed to pressurize the deposition material to be injected into the evaporation vessel through the connection portion.

The connecting portion may be further provided with a blocking portion for blocking the flow of the molten evaporated material after the evaporated material is supplied to the evaporation container to prevent the evaporated material from flowing backward.

Wherein the evaporation vessel is further provided with a sensing unit for sensing the amount of the evaporation material contained in the evaporation vessel, and the evaporation material melts in the evaporation vessel according to the amount of the evaporation material contained in the evaporation vessel, And a control unit for controlling the deposition material supply unit and the deposition material supply unit to supply the molten deposition material to the deposition material supply unit.

Wherein the deposition material supply unit includes a deposition material loading unit on which a deposition material member made of a solid state deposition material is loaded and a deposition material supplying unit for supplying the deposition material to the deposition material injection unit, And an injection unit for pushing the deposition material member corresponding to the deposition material injection port and injecting the deposition material member into the melting vessel.

Wherein the evaporation material supply unit further includes a housing that spatially separates from the processing space of the vacuum chamber, wherein the housing is converted into an atmospheric pressure state when the pressure inside the housing is supplied from the outside, To a pressure in the processing space of the vacuum chamber when supplying the deposition material member to the vacuum chamber.

A blocking portion for selectively blocking the evaporation of the evaporation material may be additionally provided on the evaporation vessel.

It is preferable that the heating temperature in the melting portion of the evaporation material is higher than the melting point of the evaporation material and lower than the temperature in the evaporation vessel.

The thin film deposition apparatus according to the present invention minimizes the time for refilling the deposition material by supplying molten deposition material to an evaporation vessel in which the deposition material is evaporated by receiving and melting the deposition material in the solid state, And the productivity can be remarkably increased.

In particular, by supplying molten deposition material to an evaporation vessel in which a deposition material in a solid state is supplied and melted to evaporate the deposition material, the molten deposition material is continuously supplied to continuously process the substrate without stopping the apparatus, And the productivity can be remarkably increased.

1 is a cross-sectional view illustrating a thin film deposition apparatus according to the present invention.
FIG. 2 is a cross-sectional view showing the configuration of a vaporizing container, a deposition material melting portion, and a deposition material supplying portion in the thin film deposition apparatus of FIG. 1;
3 is a cross-sectional view showing another example of the configuration of the evaporation container, the evaporation material melting portion, and the evaporation material supply portion of FIG.

Hereinafter, a thin film deposition apparatus according to the present invention will be described in detail with reference to the accompanying drawings.

The thin film deposition apparatus according to the present invention comprises a vacuum chamber 100 forming a closed processing space S as shown in FIG. 1; And one or more evaporation sources 130 installed in the vacuum chamber 100 to evaporate the evaporation material so as to form a thin film on the substrate-processed surface of the substrate 10.

Here, the substrate 10, which is an object of the substrate processing, forms a thin film by evaporation of a deposition material on a substrate-processed surface such as a liquid crystal display, a plasma display panel, and an organic light emitting diode Any object can be made as long as it can be done.

The substrate 10 may be transported directly into the vacuum chamber 100 or may be transported in the substrate tray 20, as shown in FIG.

In the case of at least one of the transporting process and the process, the substrate 10 faces the upper side of the substrate 10 according to the type of the substrate 10, or is oriented toward the ground, And can be transferred and processed in various forms such as forming a slope.

A mask (not shown) having an opening patterned to be deposited in a predetermined pattern on the substrate-processed surface of the substrate 10 may be installed in close contact with the substrate-processed surface according to the type of the substrate process.

The vacuum chamber 100 may be configured to form a processing space S for carrying out substrate processing.

For example, the vacuum chamber 100 may include a lid 110 detachably coupled to the chamber body 120 to form a closed processing space S.

The vacuum chamber 100 includes an exhaust pipe (not shown) for maintaining and exhausting the pressure in accordance with conditions of the substrate processing in the processing space S, a member (not shown) for fixing or guiding the substrate tray 20, Various members, modules, and the like may be installed depending on the type of substrate processing.

In the vacuum chamber 100, one or more gates 101 and 102 may be formed for the entrance and exit of the substrate 10.

As shown in FIG. 1, the evaporation source 130 can be configured in various ways as a structure in which the evaporation material is evaporated so as to form a thin film on the substrate-processed surface of the substrate 10, which is provided in the vacuum chamber 100, And the deposition material is continuously supplied in a molten state.

2 and 3, the evaporation source 130 may include a deposition material supply unit 230 for supplying a deposition material in a solid state; A deposition material fusing part 220 for fusing the deposition material supplied from the deposition material supply part 230; And an evaporation vessel 210 for supplying molten evaporation material from the evaporation material melting unit 220 and heating and evaporating the evaporation material.

The evaporation container 210 may have various shapes and materials such as a cylindrical shape depending on the type of the evaporation material, such that the evaporation material is contained in the evaporation material and evaporated as a vapor by heating the heating heater 291 .

The deposition material may be an organic material, an inorganic material, or a metal material such as aluminum. In the case of a metal material, a heat-resistant material such as a ceramic may be used in consideration of an extremely high heating temperature.

On the upper side of the evaporation vessel 210, a blocking unit 292 for blocking the evaporation of the evaporation material may be additionally provided so that evaporation of the evaporation material can be selectively performed.

The blocking unit 292 may be configured to selectively block the vapor of the evaporation material evaporated in the evaporation vessel 210. The blocking unit 292 may be rotated by driving the rotation driving unit 293, And may be configured to block evaporation.

The evaporation material melted portion 220 may have various configurations as a configuration for supplying evaporation material in a molten state to the evaporation vessel 210 by being connected to the evaporation vessel 210.

2 and 3, the evaporation material melting unit 220 may include a vapor deposition material and may be connected to the evaporation vessel 210 and the evaporation vessel 210 so that the evaporated material is supplied to the evaporation vessel 210, A melting vessel 221 connected by a heater 280; And a heating unit 222 installed in the melting vessel 221 for heating and melting the evaporation material contained in the melting vessel 221.

The evaporation vessel 210 is connected to the evaporation vessel 210 by a connecting unit 280 so that the evaporation vessel 210 is filled with the evaporation material. A variety of configurations including a similar configuration are possible.

Particularly, in the melting vessel 221, the molten evaporation vessel 210, which is heated by melting the solid state evaporation material, flows out into the vacuum chamber 100 and affects the evaporation rate, It is preferable to maintain the state isolated from the processing space S of the vacuum chamber 100 in order to prevent this.

The melting vessel 221 may further include a valve 228 for opening and closing the evaporation material inlet 229 when the evaporation material inlet 229 for receiving the evaporation material in the solid state from the evaporation material supply unit 230 is formed, It is desirable to install.

The valve 228 is opened and closed only when it is supplied from the evaporation material supply unit 230 as a constitution for opening and closing the evaporation material inlet 229 and when the evaporation material is melted in the melting vessel 221, To block the evaporation material from flowing out to the outside of the melting vessel 221, particularly to the processing space S of the vacuum chamber 100.

The heating unit 222 may be installed in the melting vessel 221 or may surround the melting vessel 221 in order to heat and melt the evaporation material contained in the melting vessel 221.

The heating temperature of the evaporation material contained in the melting vessel 221 is preferably higher than the melting point of the evaporation material so that the evaporation material can be sufficiently melted and is preferably equal to or lower than the temperature of the evaporation vessel 210 .

Particularly, when the heating temperature of the evaporation material contained in the melting vessel 221 is lower than the temperature of the evaporation vessel 210, when the evaporation vessel 210 is supplied with the evaporation material, 210), the influence on the process due to the supply of the deposition material can be minimized.

The connection unit 280 is connected to the evaporation vessel 210 and the melting vessel 221 to transfer the evaporated evaporation material from the melting vessel 221 to the evaporation vessel 210, ≪ / RTI > Here, the connection unit 280 may be provided with a heating unit 281 to maintain the molten deposited material in a molten state in consideration of the flow of the molten deposited material.

Further, it is needless to say that the connection unit 280 may be formed as a separate component or at least one of the evaporation vessel 210 and the melting vessel 221.

The connecting portion 280 may be connected to the evaporation vessel 210 and the melting vessel 221 in various forms depending on the supply method of the evaporation material.

For example, the connection unit 280 may connect the melting vessel 221 and the evaporation vessel 210 at a position lower than the predetermined level of the evaporation material in the evaporation vessel 210, as shown in FIG.

At this time, the melting vessel 221 receives the evaporation material by the evaporation material supply unit 230 to be described later, melts the evaporation material, and maintains the evaporation material at a constant water level so that the water level of the evaporation vessel 210 connected by the connection unit 280 Can be automatically adjusted.

The gas is injected into the upper portion of the melting vessel 221 and the vaporized material in the melting vessel 221 is injected into the evaporation vessel 210 through the connecting portion 280 to be injected into the evaporation vessel 210 ) Can be connected. When the melting vessel 221 is injected into the evaporation vessel 210, the remaining portion except for the connecting portion 280 is sealed by a valve or the like.

A gas such as halogen is injected by the gas injection pipe 225 to increase the pressure at the upper part of the melting vessel 221 so that the evaporation material in the melting vessel 221 is injected into the evaporation vessel 210, Is injected into the evaporation vessel 210 through the evaporation vessel 280.

The evaporation material melted portion 220 may be formed in a manner such that evaporation material in the melting vessel 221 is transferred into the evaporation vessel 210 by pressurization of the gas and then prevented from flowing backward through the connection portion 280 The deposition material may be supplied from a deposition material supply unit 230, which will be described later, after the gas is exhausted through a separate exhaust port (not shown) to melt the deposition material in the solid state.

The evaporation material melted portion 220 is heated by the gas so that the evaporation material in the melting vessel 221 is transferred into the evaporation vessel 210 and then evaporated from the evaporation material supply portion 230, And the solid state deposition material can be melted by supplying the material. In this case, both the deposition material melted portion 220 and the deposition material supply portion 230 are kept in a pressurized state.

3, a molten container 221 is provided on the upper side of the molten container 221 and a deposition material in the molten container 221 is introduced into the molten container 221. In this case, A plunger may be installed to pressurize the deposition material to be injected into the evaporation vessel 210 through the connection part 280. [

The plunger can be configured in various manners, such as a piston movement, in which evaporation material in the melting vessel 221 is injected into the evaporation vessel 210 through the connection part 280 by linear movement.

The evaporation material melted portion 220 may be formed to prevent the evaporation material in the melting vessel 221 from being transferred into the evaporation vessel 210 by the pressure of the plunger and then prevent the backflow through the connection portion 280 The plunger may be retracted and the deposition material may be supplied from the deposition material supply unit 230 to be described later to melt the deposition material in the solid state. Here, the plunger can be smoothly retreated by injecting gas to the tip portion of the plunger abutting on the evaporation material at the retreat of the plunger.

In addition, a blocking unit (not shown) such as a valve for shutting off the flow of the evaporated deposition material 210 may be additionally provided to prevent the evaporated material 210 from flowing backward.

The blocking unit may be installed in at least one of the opposite ends of the connection unit 280. The blocking unit may be configured to prevent the reverse flow of the molten evaporated material after being supplied to the evaporation vessel 210, .

As another example, the connection unit 280 may connect the melting vessel 221 and the evaporation vessel 210 at a position higher than the predetermined level of the evaporation material in the melting vessel 221, as shown in FIG. 3 have.

The supply of the evaporation material to the evaporation vessel 210 may be supplied by various methods such as a plunger method as shown in FIG.

3, the melting vessel 221 is disposed below the melting vessel 221 and the evaporation material in the melting vessel 221 is injected into the evaporation vessel 210 through the connection unit 280 A plunger 226 for pressurizing the deposition material may be provided.

The plunger 226 can be configured in various manners such that the evaporation material in the melting vessel 221 is injected into the evaporation vessel 210 through the connecting part 280 by a linear movement such as a piston motion.

A bellows 247 or the like may be additionally installed in the melting vessel 221 to supply the evaporation material by the plunger 226 while preventing contamination.

The plunger 226 is lowered to lower the level of the evaporation material in the melting vessel 221 to a level lower than that of the connection part 280 when the evaporation material in the solid state is supplied from the evaporation material supply part 230 to be described later, The deposition material in the melting vessel 221 is raised into the evaporation vessel 210 by increasing the level of the evaporation material in the melting vessel 221 to be higher than that of the connection part 280. [ And injected through the connecting portion 280.

3, when the connection unit 280 connects the melting vessel 221 and the evaporation vessel 210 at a position higher than the predetermined level of the evaporation material in the melting vessel 221, The evaporation material evaporated in the evaporation chamber 210 may be transferred to the melting vessel 221 through the connection part 280 to affect the evaporation rate in the vacuum chamber 100.

The connection part 280 may be provided with a valve 283 for blocking the evaporation material evaporated in the evaporation vessel 210 from being transmitted to the melting vessel 221 through the connection part 280.

Meanwhile, the thin film deposition apparatus includes a sensing unit (not shown) for sensing the amount of the evaporation material contained in the evaporation vessel 210, an evaporation vessel 210 for measuring the amount of the evaporation material, And a control unit for controlling the deposition material supplying unit 230 and the deposition material melting unit 220 so that the material melting unit 220 supplies molten deposition material to the evaporation vessel 210.

The sensing unit is a sensor for measuring the amount of the evaporation material in the evaporation vessel 210 to transmit a sensed value for measuring the amount of the evaporation material to the control unit and measuring the measured amount by the control unit, , Light detection, and so on.

The deposition material supplying unit 230 may be configured to supply the deposition material in a solid state to the deposition material melting unit 220 in various configurations.

The evaporation material supply unit 230 includes a deposition material loading unit 231 on which a deposition material member 30 made of a solid deposition material is loaded and a deposition material injection port 229 formed on the melting vessel 221. [ A lift member 228 for vertically moving the deposition material mounting portion 231 to position the deposition material member 30 at the injection position corresponding to the deposition material inlet 229, And an injection unit 239 for pushing the molten metal into the melting vessel 221.

The deposition material loading unit 231 may have any structure as long as the deposition material member 30 made of the deposition material in a solid state can be stacked.

The deposition material member 30 to be deposited on the deposition material loading unit 231 can be any shape as long as it is in a solid state such as a block shape or a particle shape and is smoothly supplied with an evaporation material.

The elevation drive unit 228 is configured to move the deposition material loading unit 231 upward to position the deposition material member 30 at the injection position corresponding to the deposition material inlet 229 formed in the melting vessel 221 Various configurations are possible.

A guide member 237 may be provided for stable deposition of the evaporation material member 30 when the elevation driving unit 228 moves the deposition material mounting unit 231 upward.

The pressing portion 239 is configured to push the deposition material member 30 corresponding to the deposition material inlet 229 and inject it into the melting vessel 221, and various configurations are possible.

The pressing portion 239 pressurizes the deposition material member 30 positioned at the injection position corresponding to the deposition material injection port 229 formed in the melting vessel 221 toward the deposition material injection port 229, And a linear driving device for injecting the member 30 into the melting vessel 221, as shown in FIG.

As a method for injecting the deposition material member 30 into the melting vessel 221, a deposition material loading unit 231 for supporting the deposition material member 30 is sloped toward the melting vessel 221, It may be configured to fall into the melting vessel 221 by an inclination when the deposition material member 30 is positioned at the injection position corresponding to the material injection port 229. [

The evaporation material supply unit 230 needs to be supplied with the evaporation material member 30 from outside so that the pressure needs to be changed in consideration of the environment of the vacuum chamber 100 under the atmospheric pressure and under the vacuum pressure have.

Accordingly, the deposition material supplying unit 230 may further include a housing 236 that is spatially separated from the processing space S of the vacuum chamber 100.

The housing 226 is connected to the vacuum pump and the gas supply device so that the pressure inside the housing 226 is converted into an atmospheric pressure state when a plurality of the evaporation material members 30 are supplied from the outside, It can be converted into the pressure in the processing space S of the vacuum chamber 100, particularly the pressure of the melting vessel 221, when supplying the member 30. [

The housing 226 is also configured so that when the pressure inside the housing 226 is converted into an atmospheric pressure state when a plurality of evaporation material members 30 are supplied from the outside and the evaporation material member 30 is supplied to the melting vessel 221, To the pressure in the processing space S of the melting vessel 221, in particular the pressure of the melting vessel 221.

2, the housing 226 is connected to the vacuum chamber 200 by the melting vessel 221 and the connecting member 290 in order to minimize the influence of the vacuum chamber 100 on the processing space S, Can be isolated and connected to the processing space (S) of the processing unit (100).

The connection member 290 may be configured in various ways as a configuration for isolating the processing space S of the vacuum chamber 100 and may include one or more valves 228 and 238 as described above for isolation from the melting vessel 221, Can be installed.

2 and 3, at least a portion 236a of the housing 226 is provided in the vacuum chamber 100. The housing 226 may be provided in the inner space of the vacuum chamber 100 or may be a part of the vacuum chamber 100, (Not shown) which is protruded to the lower side of the substrate 100 and is capable of opening and closing the inner space, and the like, and the deposition material member 30 is supplied from the outside.

The evaporation source 130 does not need to stop the operation of the thin film deposition apparatus for the deposition of the evaporation material into the evaporation vessel 210 by continuously supplying the evaporation material to the evaporation vessel 210, The substrate can be processed and the substrate processing speed can be increased, and as a result, the yield can be greatly improved.

Particularly, in the thin film deposition apparatus according to the present invention, a block-shaped solid-state deposition material is supplied to a deposition material melting unit 220 through a deposition material supply unit 230, It is possible to continuously supply the evaporation material to the evaporation vessel 210, particularly, the evaporation material in a state capable of performing the thin film deposition process.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention as defined in the appended claims. It is to be understood that both the technical idea and the technical spirit of the invention are included in the scope of the present invention.

100: vacuum chamber 130: evaporation source
210: Evaporation vessel 220: Evaporation material melting section
230:

Claims (12)

A vacuum chamber for forming a sealed process space for depositing a thin film on the substrate by evaporation of the deposition material;
And one or more evaporation sources installed in the vacuum chamber to evaporate the evaporation material to form a thin film on the substrate-processed surface of the substrate,
The evaporation source
A deposition material supply unit for supplying a deposition material in a solid state,
A deposition material melting unit for melting the deposition material supplied from the deposition material supply unit,
And an evaporation vessel which receives molten evaporation material from the evaporation material melted portion and heats and evaporates the evaporation material,
Wherein the deposition material-
The deposition material is contained in the evaporation container and is connected to the evaporation container by a connection part so as to pressurize the evaporation material contained in the evaporation container so that the molten evaporation material is supplied to the evaporation container, A melting vessel for receiving and evaporating the evaporation material from the evaporation material supply unit to maintain a predetermined level or higher,
And a heating unit installed in the melting vessel to heat and melt the evaporation material contained in the melting vessel. delete The method according to claim 1,
Wherein the connection unit connects the melting vessel and the evaporation vessel at a position lower than a predetermined level of the evaporation material in the evaporation vessel,
Wherein the melting vessel is connected to a gas injection tube for injecting evaporation material in the melting vessel into the evaporation vessel through the connecting portion by being injected into an upper portion of the melting vessel, . The method according to claim 1,
Wherein the connection unit connects the melting vessel and the evaporation vessel at a position lower than a predetermined level of the evaporation material in the evaporation vessel,
Wherein the melting vessel is provided with a plunger disposed on the upper side of the melting vessel and pressing the deposition material so that the evaporation material in the melting vessel is injected into the evaporation vessel through the connecting portion. A vacuum chamber for forming a sealed process space for depositing a thin film on the substrate by evaporation of the deposition material;
And one or more evaporation sources installed in the vacuum chamber to evaporate the evaporation material to form a thin film on the substrate-processed surface of the substrate,
The evaporation source
A deposition material supply unit for supplying a deposition material in a solid state,
A deposition material melting unit for melting the deposition material supplied from the deposition material supply unit,
And an evaporation vessel which receives molten evaporation material from the evaporation material melted portion and heats and evaporates the evaporation material,
Wherein the deposition material-
A melting vessel containing the evaporation material and connected to the evaporation vessel by a connection unit to pressurize the evaporation material contained in the evaporation vessel and supply the evaporation vessel with the molten evaporation material,
And a heating unit installed in the melting vessel for heating and melting the evaporation material contained in the melting vessel,
Wherein the connection unit connects the melting vessel and the evaporation vessel at a position lower than a predetermined level of the evaporation material in the evaporation vessel,
Wherein the melting vessel is supplied with the evaporation material from the evaporation material supply unit and melts so that the level of the evaporation material in the evaporation vessel is maintained at a predetermined level or higher. The method according to claim 1,
Wherein the connecting portion connects the melting vessel and the evaporation vessel at a position higher than a level of a predetermined evaporation material in the melting vessel,
Wherein the melting vessel is provided with a plunger disposed on the upper side of the melting vessel and pressing the deposition material so that the evaporation material in the melting vessel is injected into the evaporation vessel through the connecting portion. The method according to any one of claims 1 to 7,
Wherein the connecting portion is further provided with a blocking portion for blocking the flow of molten evaporated material after the evaporated material is supplied to the vaporizing container to prevent the evaporated material from flowing backward. The method according to any one of claims 1 to 7,
Wherein the evaporation vessel is further provided with a sensing unit for sensing an amount of the evaporation material contained in the evaporation vessel,
And a controller for controlling the evaporation material supply unit and the evaporation material supply unit such that the evaporation material melted part supplies molten evaporation material to the evaporation vessel according to an amount of the evaporation material contained in the evaporation vessel measured by the sensing part And the thin film deposition apparatus. The method according to any one of claims 1 to 7,
Wherein the deposition material supply unit comprises:
A deposition material loading unit on which a deposition material member made of a solid state deposition material is loaded,
An elevation driving unit for moving the deposition material loading unit vertically to position the deposition material member at an injection position corresponding to the deposition material injection port formed in the melting vessel;
And an injection unit for pushing the deposition material member corresponding to the deposition material injection port and injecting the deposition material member into the melting vessel. The method of claim 9,
Wherein the deposition material supply unit comprises:
Further comprising a housing which spatially separates from the processing space of the vacuum chamber,
Wherein the housing is converted into an atmospheric pressure state when pressure is applied to the evaporation material member from the outside and is converted into a pressure in the processing space of the vacuum chamber when supplying the evaporation material member to the melting vessel. Deposition apparatus. The method according to any one of claims 1 to 7,
Wherein a blocking portion for selectively blocking the evaporation of the evaporation material is additionally provided on the evaporation vessel. The method according to any one of claims 1 to 7,
Wherein the heating temperature in the evaporation material fused portion is higher than the melting point of the evaporation material and lower than the temperature in the vaporization container.

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