JP3962349B2 - Vapor phase organic material vapor deposition method and vapor phase organic material vapor deposition apparatus using the same - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
  The present invention relates to a semiconductor device manufacturing apparatus and a manufacturing method thereof, and relates to a vapor phase organic deposition method and an organic vapor deposition apparatus using an organic material.
[0002]
[Prior art]
  Recently, thin film formation technology using functional polymer compounds as organic compounds and organometallic compounds has been developed in addition to insulating materials for semiconductor memories, such as conductive materials, optoelectronic materials, and organic light emitting (Electro-luminescence) element materials. Interest is concentrated.
[0003]
  Among the organic thin film forming methods that have been developed so far, one of the typical techniques is the vacuum evaporation method, which consists of a thermal evaporation source at the bottom of the vacuum chamber and a deposition substrate at the top.WhenInstall,A thin film is formed. Looking at the schematic configuration of an organic thin film forming apparatus using this vacuum deposition method, there is an evacuation system connected to the vacuum chamber, which is used to maintain a constant vacuum in the vacuum chamber.The afterwards,From one or more organic thin film material thermal evaporation sources located in the lower part of the vacuum chamber,The organic substance which is an organic thin film material is evaporated. The thermal evaporation source of the organic thin film material is a cylindrical or rectangular container, and the organic material for film formation is accommodated therein. Quartz, ceramics, etc. are used as the container material, and a heater with a certain pattern pattern is surrounded around the container part.. ThatTherefore, when a certain amount of power is applied,When the temperature around the container risesAlsoIn addition, the container is heated to a constant temperature.TheThe organic matter begins to evaporate. The temperature is inspected by a temperature control heat belt installed at the bottom or top of the container.,The organic evaporation material was kept at a constant temperature so that the desired evaporation rate was obtained. The evaporated organic matter,Substrate made of glass or wafer material placed at a certain distance from the top of the containerUntilMoveAnd thatAfter a continuous process such as adsorption, vapor deposition, and re-evaporation on the surface of the substrate,Solidified on the substrate to form a thin film.
[0004]
  Here, the organic compound of the organic thin film material has a high vapor pressure to be vaporized, and the thermal decomposition temperature by heating is close to the evaporation temperature, so it is stable for a long time.didHigh-speed thin film deposition is difficult because the organic evaporation rate is not easy to control. In addition, the vaporized organic thin film material released from the thermal evaporation source in the vacuum chamber has directivity corresponding to the CRUCABLEBLE shape (opening) at the top of the thermal evaporation source container, which is limited. Limited to a narrow area
Forms a uniform organic thin film on a large area substrate because it reaches the substrateDifficult to do. Furthermore, to form a uniform thin film of organic thin film,As a directivity correction meansAndMethod of forming a film while rotating the substrate at a constant speedThere is also. However, with such a method,Evaporation equipment(apparatus)ButSubstrate turning radiusIt is enlarged to the size corresponding toEnd up. Also,Unnecessary effective area(To parts where organic thin film materials do not need to be deposited)Expensive because an organic thin film is formedNaThe use efficiency of organic materials is extremely reduced.,Resulting in lost productivityHaveIt was.
[0005]
  Thus, in the vacuum deposition method,In manufacturing organic light-emitting devices using organic thin films and products using functional thin films, low film formation speed, low organic material use efficiency, organic thin film layer variability, main materials (host materials) and coloring materials ( There are various problems such as difficulty in fine adjustment of the mixing amount of the dopant material), adjustment of the temperature of the thermal evaporation source, difficulty in forming a uniform organic thin film with an increase in the size of the substrate, etc. A conventional vacuum deposition apparatus will be described with reference to FIG.
[0006]
  FIG. 1 shows an example of a conventional vacuum deposition apparatus.
  According to the conventional vacuum deposition apparatus shown in FIG. 1, first, an appropriate amount of a substance to be deposited on the molybdenum boat (6) is predicted and placed, and then the pressure in the vacuum chamber (1) is set to about 10 to 6 torr. Lower. Then use the temperature control device,If the deposition material is a metal, raise the heat to near the melting point of the metal,The metal isIncrease the temperature until it vaporizes. At this time, when the evaporation of the substance on the molybdenum boat (6) starts gradually, the shutter (5) attached in advance is opened.,The evaporated material molecules are deposited on the substrate. At this time, the shutter (5),Immediately before the material on the molybdenum boat (6) is vaporizedTo the substanceIt plays a role in preventing remaining impurities from being deposited on the substrate.
[0007]
  Since such a vacuum deposition apparatus cannot predict the exact amount of material to be deposited, a large amount of material must be mounted on the molybdenum boat (6).Absent. Also,Since it is impossible to induce vapor in the desired direction, the deposition process is repeated several times.RWhen returning, the inside of the chamber is contaminated, and there is a problem that the inside must be cleaned every time. Furthermore, the amount of substance placed on the molybdenum boat (6), the opening and closing time of the shutter (4), and the vaporization time by temperature control,It is a variable for adjusting the thickness, and it is impossible to finely adjust the variable as a whole.
[0008]
  On the other hand, the unit vapor deposition source is used for organic semiconductor manufacturing methods.(Unit deposition source tank)How to use and,There is an OVPD (Organic Vapor Phase Deposition) method recently proposed by Mr. Max Stain et al. At Princeton University.
[0009]
  Unit deposition source (Unit deposition source tank)The organic semiconductor manufacturing method using the method requires a long time to deposit each layer used in the organic semiconductor, uses a large amount of the material used at the time of depositing each layer, and the density of the deposited film and adhesion to the substrate. Since there is a problem that the force is not good, the mass production yield for mass production of organic semiconductors decreases. Furthermore, for mass productionBigThere are limitations on the manufacturing process of the area substrate. In other words, now,370X470mmofThe limit is to use a substrate of a size.
[0010]
  The OVPD method is,In the Axitron method proposed by Maxstein et al.CarryThis is a method for manufacturing each layer used in an organic semiconductor. This method is a unit evaporation source(Unit deposition source tank)Than the method usingAlsoIncrease the efficiency of using organic substances,BigThe production of organic semiconductors with area substrates is theoretically possible. By the wayButThe Axitron method using the OVPD method uses an existing CVD method scan head, and actually tests using a 200 × 200 mm substrate, but is vulnerable to heat.Using organic semiconductor materialsThin filmFormation ofInLeaveCan cause problems.
[0011]
  further,BigIn order to manufacture for an area substrate, 370X470mm or moreLargeAlthough the shower head has to be manufactured, this configuration itself has its drawbacks. In addition, in the Axitron type vapor deposition method, the vapor deposition source tank and the high-temperature heat source of the scan head are fixed. Furthermore, doping in the production of organic semiconductors,Install two or more scan heads in the system,Make individual temperature adjustment possible. However, since the existing OVPD method uses only one scan head, when two or more kinds of doping materials having relatively different thermal characteristics are used and doped, the OVPD method changes to a material having poor thermal characteristics. There are disadvantages that can be done.
[0012]
  In other words, the existing two methods are,Organic semiconductor materialsBigThere is a problem that vapor deposition cannot be satisfactorily performed on the substrate of the area substrate.
[0013]
[Problems to be solved by the invention]
  Therefore, the present invention has been made to solve the above various problems, and the first object of the present invention is toBigAn object of the present invention is to provide a vapor phase organic material vapor deposition method capable of forming an organic thin film on a substrate having an area at high speed, and a vapor phase organic material vapor deposition apparatus using the vapor phase organic material vapor deposition method.
[0014]
  Furthermore, a second object of the present invention is an organic semiconductor materialThe largeBy diluting the organic substance particles in the evaporation source source tank so that it can be deposited on the area substrate, the thickness can be adjusted accurately and stably while increasing the adhesion of the organic thin film to the substrate,Also,Buffer chamber and deposition chamberAndComplete separation using a gate valvedo it,The heat source of the scan headBigTemperature on the substrate of the area and in the deposition chamberTheRiseLettingPreventTo doit canBigAn object of the present invention is to provide a vapor phase vapor phase organic vapor deposition method for an area substrate and a vapor phase organic vapor deposition apparatus using the vapor deposition method.
[0015]
[Means for Solving the Problems]
  According to the present invention made to achieve the above objectBigThe vapor phase organic vapor deposition device for area substrate is
  In vapor-phase organic matter vapor deposition equipment,
  Gas reservoir with inert gasWhen,
  Under the adjustment of MFC (Mass Flow Controller)From the gas reservoirA gas heater for heating the flowing inert gas;
  Built-in gas and organic substances to be deposited, the gas heaterFlowing fromInert gasByDilutionAnd heatedOrganic particlesWith a heat source heaterAt least one vapor deposition source tank that is heated to generate a diluted organic gas;
  It is connected to the vapor deposition source tank by a connecting pipe and is movably provided in the buffer chamber and the vapor deposition chamber.A scan head attached with a deposition rate regulator for monitoring and adjusting the movement of the diluted organic gas;
  In the connecting pipeTo keep temperatureSaidA heater pipe wound outside the connecting pipe;
  Installed between the buffer chamber and the deposition chamber;A gate valve that opens and closes the movement of the diluted organic gas;
  A deposition chamber for depositing the diluted organic gas introduced from the deposition source tank on a large area substrate,
  The gas heater isHeating the inert gas injected into the vapor deposition source tank so that the amount of organic gas generated in the vapor deposition source tank is adjusted;
  The gate valve isBy closing the movement of the diluted organic gasThe temperature rise on the large area substrate and in the vapor deposition chamber by the heat source of the scan head is blocked.
To do.
[0016]
  Further according to the inventionBigThe vapor phase organic matter deposition method of the area substrate is
  In vapor phase organic vapor deposition method,
  Gas reservoir with inert gasFromMFC(Mass Flow Controller)Inert gas flowing under the adjustment of gas heaterHeat withStages,
  At least one deposition source tank containing the gas and organic material to be depositedFlowing an inert gas from the gas heater,The inert gasByDilutionAnd heatedOrganic particlesWith a heat source heaterHeating to generate a diluted organic gas; and
  It is connected to the vapor deposition source tank by a connecting pipe and is movably provided in the buffer chamber and the vapor deposition chamber.The movement of the diluted organic gas is monitored and adjusted by the scan head to which the deposition rate controller is attached.Stages,
  SaidBy the heater pipe wound outside the connecting pipeIn the connecting pipeMaintaining the temperature; and
  Opening and closing the movement of the diluted organic gas by a gate valve installed between the buffer chamber and the deposition chamber;
  In the vapor deposition chamber,Depositing the diluted organic gas introduced from the deposition source tank on a large area substrate;With
  Heating an inert gas injected into the vapor deposition source tank so that an amount of organic gas generated in the vapor deposition source tank is adjusted by the gas heater;
  By the gate valveBy closing the movement of the diluted organic gas,Shutting off temperature rise on the large area substrate and in the deposition chamber by the heat source of the scan head;
  Collecting the organic material separated as the scan head moves in the buffer chamber with an auxiliary crucible installed to recirculate.
[0017]
  Further according to the inventionBigThe vapor phase organic matter deposition method of the area substrate is
  In vapor phase organic vapor deposition method,
  Loading the substrate into the deposition chamber in the deposition apparatus (s710);
  Pre-heating the deposition source tank and injecting an inert gas at a temperature of 200 to 600 ° C. (s712);
  When an inert gas and organic particles in the vapor deposition source tank form a mixture and heat, a SGHP (Solid Gas Heterogeneous Phase) material is generated (s714);
  Transferring a large amount of gas phase organic SGHP material from the deposition source tank to the buffer chamber through a connecting pipe (s716);
  Measuring the flow rate of the gas phase organic matter using the gas phase organic matter sensor in the buffer chamber, and opening the buffer gate valve when the flow rate of the gas phase organic matter reaches a preset amount (s718); ,
  Depositing vapor phase organics by operation of the scan head (s720);
  Thereafter, after the evaporating time set in advance has elapsed, the step of moving the scan head (s722),
  And unloading the substrate by closing the buffer gate valve (s724).
[0018]
DETAILED DESCRIPTION OF THE INVENTION
      [Example 1]
  Hereinafter, in order to achieve the object of the present invention, it is used when manufacturing an organic semiconductor.BigExamples where area substrates can be used1Organic semiconductor device manufacturing apparatus and manufacturing method thereof, FIG.Will be described along the line.
[0019]
  FIG.Examples of organic semiconductor systems1ofBigThe vapor phase organic vapor deposition apparatus (700) for the area substrate is under the control of the gas reservoir (701) holding an inert gas and the MFC (702).From the gas reservoir (701)A gas heater (703) for heating the flowing inert gas, and a gas heater and an organic substance to be deposited, and a gas heaterfromInert gasByDilutionAnd heatedOrganic particlesWith a heat source heaterAt least one deposition source tank (714) that is heated to generate a diluted organic gas;It is connected to the vapor deposition source tank (714) by a connecting pipe (707) and is movable in the buffer chamber (711) and the vapor deposition chamber (713).A scan head (709) to which a deposition rate controller (715) for monitoring and adjusting the movement of the diluted organic gas is attached;In the connecting pipe (707)Installed between the heater pipe (706) wound outside the connecting pipe (707) to maintain the temperature, and between the buffer chamber (711) and the vapor deposition chamber (713) to release the movement of the diluted organic gas. And a gate valve (711) for closing, and a deposition chamber (713) for depositing the diluted organic gas introduced from the deposition source tank (714) on the large area substrate (712).In particular, FIG. 2 is a plan view of a vapor deposition organic vapor deposition apparatus for a large area substrate of the present invention, in which a scan head (709) moves in parallel with the large area substrate (712) on the large area substrate (712). While organic gas is used for large area substrates ( 712) can be deposited.
[0020]
  FIG., The gas reservoir (701) includes an inert gas (Ar, He, N).₂ Including at least one of) And all types of non-explosive gases used in existing CVD can be used.This gas,MFC (702)Under the adjustment ofIn the deposition source tank (714)What,It is injected while adjusting the gas volume.The At this time,Using a gas heater (703),Mr. Tsuji 200 ~ 600 ℃InHeating the gasIn the deposition source tank (714)Inject.
[0021]
  In this invention, organic particles and high temperature gas(Inert gas heated by gas heater (703))Is a state in which solids and gases vary, and is called Solid Gas Heterogeneous Phase (hereinafter referred to as SGHP), and a diluted substance is named an inactive SGHP substance. Further, the hot gas is an organic substance in the deposition source tank (714), for example, a substance such as Alq3.Dilute(Dilution)do itIn the deposition source tank (714)bothWill exist. The inert SGHP material is external to the deposition source tank (714).Heat source heater (751 in FIG. 6)SGHP in the deposition source tank (714) is heated by,It has the property that it can be heated by the convection effect to generate a large amount of organic gas phase. further,Connect the deposition source tank (714) and the scan head (709).Through the connecting pipe (707), the pressure difference between the deposition chamber (713) and the deposition source tank (714) is utilized.,SGHP material, which is an organic semiconductor, is injected into the deposition chamber (713). In this process, in the connecting pipe (707)InGas phase organics are loadedAlsoIn order to prevent the connection pipe (707)By heater pipe (706)Heated to high temperature. Especially when using Alq3Connecting pipe (707)Heating to 320 ° C is preferred. In order to prevent heat loss of the connecting pipe (707) during this heating process and to keep the temperature gradient constant, a double pipe is formed to connect the connecting pipe (707).Gap between each otherIs maintained in a vacuum state to maintain the temperature of the connecting pipe (707). Furthermore, a vapor deposition source tank that can store a large amount of materials is adopted.In addition, an organic gas can be deposited on the large area substrate (712) while the scan head (709) moves in parallel with the large area substrate (712) on the large area substrate (712).In the downward type, since the shadow effect by the mask can be removed, a thick shadow mask can be used. That is, the alignment error of the alignment portion of the shadow mask is reduced, and the process can be performed for a long time.
[0022]
  As described above, the vapor phase organic material injected into the scan head (709) through the connection pipe (707) is deposited on the substrate (712). At this time, in order to prevent vapor phase organic matter from being deposited in the scan head (709), the scan head (709) is heated using a resistive heat source in the manner of the connecting pipe (707). Furthermore, when the vapor deposition process by the scan head (709) is not performed on the actual substrate, the buffer chamber (710)InsideMove the scan head (709) to positionMakeIt will be. Further, the buffer chamber (710) and the deposition chamber (713) are completely separated using the gate valve (711), and the heat source of the scan head (709) is obtained.Greater byTemperature rise on the area substrate and in the deposition chamber (713) is prevented.
[0023]
  Buffer chamber (710)InsideWhen the scan head (709) is positioned at the same position, the amount of vapor phase organic matter ejected from the scan head (709),A crystal sensor (715) for speed monitoring in the buffer chamber (710) is used to regulate and stabilize the gas flow rate. Real deposition chamber(713)In the absence of a thickness measurement system,The adjustment of the thickness in the process is performed by using the adjustment of the process time.
[0024]
  FIG.IsFIG.FIG. 5 is a view illustrating installation of a plurality of vapor deposition source tanks and a scan head capable of effectively treating the SGHP organic material in the inside.
  FIG., A plurality of, for example, first, second, and third deposition source tanks (741, 742, 743) are connected to each of the first, second, and third connecting pipes (771, 772, 773). ),Through the first, second and third scan heads (791, 792, 739),Large amounts ofSupply organic substances. Furthermore, in the buffer chambersoIncludes an auxiliary crucible (745) so that as the scan head moves, the separated organic material is collected and recycled.
[0025]
  FIG.In a deposition chamber that can move SGHP organicsFIG.It is a figure explaining the operation | movement method of this scan head.
  FIG.In the inventionFIG.The vapor deposition method using the scan head (709) ofIn a state where the gate valve (711) is opened and the scan head (709) is positioned above the large area substrate (712), the vapor phase organic substance supplied from the scan head (709) is on the large area substrate (712). The laminar flow is formed by pumping (suction force) of the HIVAC pump (724) disposed under the large area substrate (712), and arrows L, L ′, L ″, and L ′ ″ Move in the direction and deposit on the large area substrate (712).Pumping port (732)TheBy arranging it under the substrate, the flow of the vapor-phase organic substance itself can be stably performed, and the uniformity of the thickness of the organic thin film deposited on the large area substrate can be kept constant. it can. Therefore, since there is almost no vapor deposition loss in the directions of the arrows L, L ', L "and L" ", there is an advantage that the utilization efficiency of the material is extremely improved.
[0026]
  FIG.IsFIG.It is a figure which describes the moving method of the scan head which can move the SGHP organic substance inside.FIG.In the vapor deposition process, the longitudinal movement of the scan head (709) is performed using the motor (717) while the piston rod (718) reciprocates at P-P 'at a constant speed. Depending on the size of the board,Scan head (709) And length,Length of longitudinal movement of scan head (709) using motor (717)WhenIs determined. Further, the scan head separately adjusts the amount of gas phase organic matter generated by the flow rate adjuster (716).
[0027]
  FIG.These are figures which describe the generation | occurrence | production method of the gaseous-phase organic substance of an organic-semiconductor device.2 and 6, The generation of vapor phase organic substances is caused by the vapor deposition source tank (714) and the external heat source heater (751), Organic particles (752) in the vapor deposition source tank (714), and high-temperature gas in the vapor deposition source tank (714).(Inert gas heated by gas heater (703))(753), the organic substance (754) and the gas injection pipe (755) stored in the vapor deposition source tank (714),Carried out by. Next, in the method for generating a gas phase organic substance of the semiconductor device according to the present invention, since a material used for the organic semiconductor when the gas phase organic substance is generated has a low thermal conductivity, a general cell type heat source is used. The organic substance is difficult to vaporize and heat is concentrated on a specific part, so that the organic substance in the vapor deposition source tank (714) is easily deteriorated.
[0028]
  FIG.The high temperature gas is injected into the deposition source tank (714) through the gas injection pipe (755) as shown in FIG.,Organic matter itself is in the deposition source tank (714)By hot gasAllow to be diluted. As a result, organic particles 752 and 753 and hot gas coexist in the vapor deposition source tank (714). Further, the temperature of the vapor deposition source tank (714) is increased outside the vapor deposition source tank (714) using a heat source heater (751). In this heating portion, the diluted portion in the coexistence state can generate a large amount of gas phase organic matter by conducting heat conduction by a convection method. Furthermore, a large amount of vapor phase organic matter can be generated even at a low external temperature of the heat source compared to existing methods.
[0029]
  next,FIG.Is, FIG.It is a figure which describes the vapor deposition method in the vapor deposition chamber of the gaseous-phase organic material generated from FIG.FIG.As described above, since a large amount of vapor phase organic matter can be generated in the vapor deposition source tank (714), the vacuum pressure in the vapor deposition chamber (713) and the vapor deposition source are described. The vacuum pressure difference in the tank (714) is embodied to be a difference of 100 to 10,000 times or more. For example, the degree of vacuum of the system is 10 ^{− Four}In the case of Torr, if the pressure difference is formed so that the pressure of the deposition source tank (714) is 10 to 1 Torr, the pressure difference is used.,In the deposition source tank (714)FromEvaporation chamber(713) WithinGas phase organic matterTheCan be guided. In addition, the connecting tube is heated at a high temperature to prevent vapor phase organics from being deposited.FIG.The deposition chamber describes a scanning method including a scan head (761) and a substrate (762).FIG.Deposition chamber with the scanning method(713)Vapor phase organics induced intoUniform thicknessShould be deposited on the substrate.for that reason,Without vapor deposition of vapor phase organic matter on a large area substrate,FIG.Like the scan head (709)MoveThe deposition is performed in a certain area on the substrate, and the scan head (709) moves at a constant speed.BigAdvance the deposition process on the substrate of the area substrate.
[0030]
  next,FIG.Describes the flow to the operation of the vapor deposition system. The substrate (712) is deposited in a deposition chamber (713) Is loaded (s710). Thereafter, the deposition source tank (714) is preliminarily heated, and the deposition source tank (714) is heated to a high temperature gas.(Inert gas heated by gas heater (703))Is injected at 200 to 600 ° C. (s712). Further, when the high temperature gas and the organic particles in the vapor deposition source tank (714) form a mixture and the temperature of the vapor deposition source tank (714) is heated, an SGHP material is generated (s714). The generated SGHP material transmits a large amount of gas phase organic SGHP material from the deposition source tank (714) to the buffer chamber (710) through the connection pipe (707) (s716). At this time, in the buffer chamber (710), the flow rate of the gas phase organic substance is measured using the gas phase organic substance sensor, and when the flow rate of the gas phase organic substance reaches a preset amount, the buffer gate valve(711)Is released (s718). Thereafter, the vapor phase organic material deposition process proceeds (s720) by the operation of the scan head (709), and after the evaporating time set in advance, the scan head (709) moves (s722), and the buffer gate valve (711) is closed and the substrate is unloaded (s724).
[0031]
  According to this inventionBigAn apparatus and method for vapor phase organic matter deposition on an area substrate will be described in detail with reference to experimental examples.
[0032]
  FIG.In accordance with the experimental example using the apparatus, the material used: Alq3, the substrate size: 370 × 470 mm, the gas used: Ar (340 ° C.), the deposition source tank (714) temperature: 300 ° C., the uniformity of the deposition source tank (714) (Uniformity): The experimental result under the condition of + -5%FIG. 2 and FIGS.See graphLightWill be described.
[0033]
  FIG.Is the correlation between diluted gas temperature and deposition volumeIndicateA graph,FIG.Is the amount of gas phase organic matter relative to the amount of dilution gas.Indicates the amount depositedA graph,FIG.When heating only the deposition source tank without dilution gasofDeposition source tank temperatureInversusDoIt is a graph which shows the amount of vapor deposition.
[0034]
  FIG.In the graph of,It can be confirmed that the temperature of the dilution gas has no effect on the deposition amount,FIG.In the graph of,As the amount of dilution gas increases, the amount of SGHP in the deposition source tank (714) increases.,By heating the deposition source tank (714)RThe amount of organic matter in the gas phase increases,It can be confirmed that the amount of vapor-phase organic matter discharged through the scan head (709) increases. further,FIG.GraphInWhen only the vapor deposition source tank (714) itself is heated, it can be seen that the amount of organic substances generated in the gas phase increases very finely.
[0035]
  In other words,FIG.,And in FIGS.GraphAccording toIf there is no dilution gas,IeCompared with the existing vapor deposition source tank (714) system in which the generation amount of gas phase organic matter is small, the SGHP amount in the vapor deposition source tank (714) is increased by injecting the dilution gas, and the SGHP is vapor deposition source tank (by the convection principle). 714) it can be seen that a large amount of vapor phase organic matter is generated.
[0036]
  Also,Since the buffer chamber (710) and the deposition chamber (713) are completely separated using the gate valve (711), the heat source of the scan head (709) is reduced.BigIncrease in temperature on the area substrate and in the deposition chamber (713)ButPreventionIsThe In addition, the adhesion of organic thin films to substratesButincreaseIsAdjustable to a precise and stable thicknessIt becomes. AlsoA large amount of material can be stored using the deposition source tank (714).
[0037]
  Although the preferred embodiment of the present invention has been described in detail above, the scope of the present invention should not be limited to the specific embodiment but should be interpreted by the appended claims. Further, those skilled in the art will appreciate that many modifications and variations can be made without departing from the scope of the invention.
[0038]
【The invention's effect】
  As described above, when the vapor-phase organic material vapor deposition method according to the present invention and the vapor-phase organic material vapor deposition apparatus using the vapor-phase organic material vapor deposition method are used, first, an organic thin film can be formed on a large-area substrate at high speed. .
[0039]
  Furthermore, this inventionTakeAccording to a vapor phase organic material vapor deposition method used in the manufacture of an organic semiconductor and a vapor phase organic material vapor deposition apparatus using the vapor phase organic material vapor deposition source, an organic thin film substrate is diluted by diluting organic material particles in a vapor deposition source tank. While increasing the adhesive strength,Precise and stable thickness adjustment. Also,The buffer chamber and the deposition chamber are completely separated using a gate valve, and the heat source of the scan head is moved continuously so that the heat source of the scan head moves.Large byTemperature rise on the area substrate and in the vapor deposition chamber can be prevented. Furthermore, since a shadow effect by the mask can be eliminated in a downward type by using a vapor deposition source tank capable of storing a large amount of material, a thick shadow mask can be used. That is, there is an excellent effect that can solve the alignment portion of the shadow mask.
[Brief description of the drawings]
FIG. 1 shows an example of a conventional vacuum deposition apparatus.It is.
[FIG.] Of this inventionBigOf vapor phase organic deposition equipment for area substrateIt is a top view.
[FIG.] Cross section showing the installation of multiple deposition source tanks and scan headsIt is.
[FIG.A diagram describing a method of operating a scan head in a vapor deposition chamber capable of moving SGHP organic materials.It is.
[FIG.]FIG.The figure which describes the movement method of the scan head which can move the SGHP organic substance insideIt is.
[FIG.] Diagram describing a method for generating gas phase organic matter in organic semiconductor devicesIt is.
[FIG.]FIG.The figure which describes the vapor deposition method in the vapor deposition chamber by the vapor phase organic matter generation generated fromIt is.
[FIG.] Flow to describe operation of vapor deposition equipmentIt is.
[FIG.] Diluted gas temperature and deposition volumeWhenCorrelationIndicateGraphIt is.
[FIG.] Of gas phase organic matter to dilution gas quantityIndicates the amount depositedGraphIt is.
[FIG.When only the deposition source tank itself is heated without dilution gasInDeposition source tank temperatureWhenIt is a graph which shows the relationship with the amount of vapor deposition.
[Explanation of symbols]
700. . . Evaporation chamber
701. . . Gas reservoir
702. . . MFC
703. . . Gas heater
706. . . Heater pipe
707. . . Connecting pipe
709. . . Scan head
710. . . Buffer chamber
711. . . Gate valve
712. . . substrate
713. . . Evaporation chamber
714. . . Deposition source tank
715. . . Deposition rate adjuster

Claims (11)

In vapor-phase organic matter vapor deposition equipment,
A gas reservoir holding an inert gas ;
A gas heater that heats an inert gas flowing from the gas reservoir under the control of an MFC (Mass Flow Controller);
At least one vapor deposition source tank containing a gas to be deposited and an organic substance, and further heating organic particles diluted and heated by an inert gas flowing from the gas heater with a heat source heater to generate diluted organic gas When,
A scan head connected to the vapor deposition source tank by a connecting pipe and movably provided in the buffer chamber and the vapor deposition chamber, and attached with a vapor deposition rate regulator for monitoring and adjusting the movement of the diluted organic gas. When,
A heater pipe the are winding outside of the connecting pipe for temperature holding of the connecting pipe,
A gate valve installed between the buffer chamber and the deposition chamber to open and close the movement of the diluted organic gas;
A deposition chamber for depositing the diluted organic gas introduced from the deposition source tank on a large area substrate,
The gas heater heats an inert gas injected into the vapor deposition source tank so that the amount of organic gas generated in the vapor deposition source tank is adjusted,
The gate valve closes the movement of the diluted organic gas, thereby blocking the temperature increase on the large area substrate and in the deposition chamber due to the heat source of the scan head, and vapor phase organic matter on the large area substrate Vapor deposition equipment. The deposition source tank, a non-explosive inert gas injected into the interior, a large of claim 1, Ar, He, characterized in <br/> contains at least one kind _of N 2 Vapor phase organic vapor deposition equipment for area substrates. The scan head, vapor organic material deposition device having a large area substrate according to claim 1, characterized in that provided two or more to both deposited two or more substances at the same time. The gas heater according to claim 1 or 2, wherein the gas heater maintains a temperature of an inert gas flowing to the deposition source tank at 200 to 800 ° C. The buffer chamber includes a heat source shut-off chamber, and an organic material reuse auxiliary crucible installed so that the organic substance separated as the scan head moves in the heat source shut-off chamber is recirculated. The apparatus for vapor phase organic matter deposition of a large area substrate according to claim 1, further comprising: In vapor phase organic vapor deposition method,
Inert gas flowing into the deposition source tank under adjustment of the MFC from Gasurezaba which possesses an inert gas (Mass Flow Controller) and a step of heating a gas heater,
At least one deposition source tank with a built-in gas and organic substances are deposited stream of inert gas from the gas heater, the organic particles diluted and heated by the inert gas is further heated by the heat source heater, Generating a diluted organic gas; and
The movement of the diluted organic gas is monitored by a scan head that is connected to the vapor deposition source tank by a connecting pipe and is movable in the buffer chamber and the vapor deposition chamber, and to which a vapor deposition rate controller is attached. Adjusting , and
A step of holding the temperature of the connecting tube by externally by winding the heater pipe of said connecting pipe,
Opening and closing the movement of the diluted organic gas by a gate valve installed between the buffer chamber and the deposition chamber ;
Depositing the diluted organic gas flowing from the deposition source tank on a large area substrate in the deposition chamber ,
Heating an inert gas injected into the vapor deposition source tank so that an amount of organic gas generated in the vapor deposition source tank is adjusted by the gas heater;
Shutting off the temperature increase on the large area substrate and in the deposition chamber by the heat source of the scan head by closing the movement of the diluted organic gas by the gate valve;
And collecting the organic material separated as the scan head moves in the buffer chamber by an auxiliary crucible installed so as to recirculate. Deposition method. The deposition source tank is large according as non explosive inert gas injected into the interior, Ar, the He, to claim 6, characterized in <br/> contains at least one kind _of N 2 Vapor phase organic vapor deposition method for area substrate. The vapor phase organic material deposition of a large area substrate according to claim 6 , wherein the vacuum pressure inside the deposition source tank is 100 to 10,000 times the vacuum pressure inside the deposition chamber. Method. The opening and closing of the movement of the diluted organic gas may further include adjusting the thickness of the organic thin film deposited on the large area substrate with a process time for releasing the movement of the organic gas. The vapor phase organic substance deposition method for a large area substrate according to claim 6. The method of vapor phase organic substance deposition on a large area substrate according to claim 6 or 7, wherein the gas heater maintains a temperature of an inert gas flowing to the deposition source tank at 200 to 800 ° C. In the method of manufacturing an organic semiconductor device,
Loading the substrate into the deposition chamber within the deposition apparatus;
Pre-heating the deposition source tank and injecting an inert gas at a temperature of 200 to 600 ° C .;
When an inert gas and organic particles in the deposition source tank form a mixture and heat, a SGHP (Solid Gas Heterogeneous Phase) material is generated;
Transferring a large amount of gas phase organic SGHP material from the vapor deposition source tank to the buffer chamber through a connecting pipe;
Measuring the flow rate of the gas phase organic matter using a gas phase organic matter sensor in the buffer chamber, and opening the buffer gate valve when the flow rate of the gas phase organic matter reaches a preset amount;
Depositing vapor phase organics by operating the scan head;
After that, after the evaporating time set in advance, the stage where the scan head moves,
And closing the buffer gate valve to unload the substrate.