KR102616039B1 - Thin film deposition apparatus for forming patterned organic thin film - Google Patents

Abstract

A thin film deposition apparatus for forming a patterned thin film is disclosed. The disclosed thin film deposition device for forming a patterned thin film includes a source container containing a source material, which evaporates the source material to generate a gaseous source material, and forming a thin film using the gaseous source material delivered from the source container. a gas injection head for supplying to a given area, a susceptor disposed opposite the gas injection head and supporting a substrate seated on the upper surface, and disposed between the gas injection head and the substrate seated on the susceptor. A source delivery channel array having an opening pattern for defining a pattern of a thin film formed on the substrate, and a source delivery channel array for lowering the temperature of the gaseous source material generated from the source container and transferred to the substrate through the gas injection head. Temperature reduction means may be included.

Description

Thin film deposition apparatus for forming patterned organic thin film}

The present invention relates to an apparatus for forming a thin film and its use, and more specifically, to a thin film deposition apparatus for forming a patterned organic thin film and a thin film deposition method using the same.

When manufacturing various electronic devices, including semiconductor devices, various thin films made of conductors such as semiconductors, insulators, or metals are formed on a substrate. Various methods are applied to form thin films, such as physical vapor deposition (PVD), chemical vapor deposition (CVD), and atomic layer deposition (ALD). Additionally, various patterning technologies are being used to form thin films patterned into the shapes required for devices.

Deposition means attaching a material to the surface of a substrate as a thin film using a vapor phase precursor. For example, deposition by evaporation means heating and evaporating a metal or compound in a vacuum and coating the vapor as a thin film on the surface of an object. During the manufacturing process of organic light emitting devices (OLEDs), there are roughly four vacuum deposition methods, which are a field of pixel formation technology. Among these, the method being applied to mass production is using a metal mask. It is a vacuum deposition method.

Because organic materials for OLED are highly reactive and vulnerable to water and oxygen, the organic material deposition process must be carried out in an environment blocked from water and oxygen. In other words, it may not be possible to use a general photolithography process. The vacuum deposition method using MM is a method in which the MM is placed close to the substrate between the evaporation source and the substrate in a vacuum chamber, and then the organic material evaporated from the evaporation source is passed through the MM and deposited on the substrate. The vacuum deposition method using MM has been technically verified, and the development of materials and equipment is also showing considerable maturity.

However, since the vacuum deposition method using MM has a fundamental disadvantage in realizing large-area high resolution, there is a problem in that it is inherently difficult to reduce production costs due to the use of expensive equipment. MM is made using a metal such as INVAR, which has a small coefficient of thermal expansion, and can be manufactured in a form where a very elaborate aperture-type pixel pattern of several tens of micrometers is formed on a thin metal film of about 15 to 30 micrometers to realize the pixel size. . However, since the existing vacuum deposition method using MM deposits using an evaporation source (source), the substrate and metal mask are placed above the evaporation source, and if the substrate and mask are thin and have a large area, a sagging problem occurs. The sagging of the substrate and mask increases as the size of the substrate increases, which may cause defects such as scratches or problems in which pixels are not accurately implemented. This problem can be a significant impediment to increasing the area and resolution of the display.

In addition, when depositing a thin film using MM, the thickness of the deposited thin film is about tens to hundreds of nm, which is significantly lower than the thickness of MM, so there are many limitations in implementing accurate shapes and fine pixels due to the shadowing effect caused by MM. . In other words, because the thickness of the OLED composition thin film is very thin compared to the MM thickness, a shadowing effect occurs and it is difficult to implement fine and precise patterns.

Therefore, there is a need for the development of new thin film deposition technology and related devices that can overcome various problems and limitations of the existing thin film formation method using a metal mask.

The technical problem to be achieved by the present invention is to provide a patterned thin film deposition technology and a thin film deposition device that can overcome various problems and limitations of the vacuum deposition method using a conventional metal mask (MM) to implement pixels of a display device. there is.

In addition, the technical problem to be achieved by the present invention is to provide a thin film deposition technology and a thin film deposition apparatus that can easily and precisely form a patterned organic thin film without problems such as sagging of the substrate or mask.

The problem to be solved by the present invention is not limited to the problems mentioned above, and other problems not mentioned will be understood by those skilled in the art from the description below.

According to one embodiment of the present invention, a thin film deposition device for forming a patterned thin film, a source container containing a source material, evaporates the source material to generate a vapor source material. ; a gas injection head for supplying the gaseous source material delivered from the source container to a given area for thin film formation; A susceptor disposed opposite the gas injection head and supporting a substrate seated on its upper surface; a source delivery channel array disposed between the gas injection head and the substrate mounted on the susceptor, the source delivery channel array having an opening pattern for defining a pattern of a thin film formed on the substrate; and a temperature reducing means for lowering the temperature of the gaseous source material generated from the source container and transferred to the substrate through the gas injection head.

A fixing member for fixing the source delivery channel array may be further provided at the lower end of the gas injection head or an area adjacent thereto, and the thin film deposition apparatus may use the fixing member to inject the gas through the source delivery channel array. It can be configured to be attachable and detachable from the lower part of the head.

A channel array support member for supporting the source delivery channel array may be further provided, and the channel array support member may have an opening area corresponding to a main area of the source delivery channel array. It may be configured to support an edge region around the main region, and the thin film deposition device may be configured to support a gap between the channel array support member and the gas injection head or the source delivery channel array disposed on the channel array support member and the gas injection head. It can be configured to adjust the gap between gas injection heads.

The thin film deposition apparatus may include a channel array switching unit capable of moving the position of the source delivery channel array while supporting it. The channel array switching unit may include a motor unit, a rotation shaft connected to the motor unit, and a channel array support plate connected to the rotation shaft and rotated together with the rotation shaft.

The channel array support plate may include a first channel array mounting portion and a second channel array mounting portion, and the source transmission channel array may include a first source transmission channel array mounted on the first channel array mounting portion and the second channel array mounting portion. It may include a second source transmission channel array mounted on the channel array seating portion. The first channel array seating portion or the second channel array seating portion may be disposed between the gas injection head and the substrate by rotating the rotation axis.

The channel array support plate may be disposed in a deposition chamber, and the deposition chamber may include a main chamber portion and an auxiliary chamber portion extending therefrom, and the gas injection head and the susceptor may be disposed in the main chamber portion. One of the first and second channel array seating portions of the channel array support plate may be disposed in the main chamber portion, and the other of the first and second channel array seating portions may be disposed in the auxiliary chamber. It may be disposed within the unit, and the auxiliary chamber may be provided with an opening and closing unit that can be opened and closed to replace the channel array.

The thin film deposition apparatus may be configured to adjust a gap between the channel array support plate and the gas injection head or a gap between the source delivery channel array disposed on the channel array support plate and the gas injection head.

The height of the susceptor may be adjustable with respect to the gas injection head.

The thin film deposition apparatus may be configured to control the temperature of the gaseous source material and the substrate so that the gaseous source material does not condense in the vapor phase before reaching the surface of the substrate and condenses upon reaching the surface of the substrate. there is.

The temperature reduction means may include a cooling gas supply unit for supplying cooling gas into the gas injection head, and the cooling gas may be mixed with the gaseous source material.

The temperature reducing means may further include a cooling channel formed in a side wall portion of the gas injection head, and a cooling fluid may flow through the cooling channel.

The temperature of the susceptor can be adjusted to a range of 10°C to 90°C.

The patterned thin film may be an organic thin film, and the thin film deposition device may be an organic thin film deposition device.

The source transfer channel array may be configured to form an organic light emitting layer pattern corresponding to a pixel area of an organic light emitting device (OLED).

The source transfer channel array may include a first source transfer channel array, a second source transfer channel array, and a third source transfer channel array, and the first source transfer channel array is the first source transfer channel array of the organic light emitting device (OLED). may have a first opening pattern corresponding to a pixel area, and the second source transmission channel array may have a second opening pattern corresponding to a second pixel area of the organic light emitting device (OLED), and the third source The transmission channel array may have a third opening pattern corresponding to the third pixel area of the organic light emitting device (OLED).

According to embodiments of the present invention, a thin film deposition technology and a thin film deposition apparatus that can overcome various problems and limitations of the conventional vacuum deposition method using a metal mask (MM) can be implemented. By using the thin film deposition technology and thin film deposition apparatus according to the embodiment, a patterned thin film, for example, an organic thin film, can be easily/precisely formed without problems such as sagging of the substrate or mask.

Additionally, according to embodiments of the present invention, various electronic devices can be easily manufactured using the thin film deposition technology and thin film deposition apparatus. In particular, using the thin film deposition technology and thin film deposition apparatus described above, organic light emitting devices (OLEDs) with excellent performance and high resolution can be more easily manufactured.

1 is a cross-sectional view schematically showing a thin film deposition apparatus for forming a patterned thin film, according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view showing a case in which a substrate mounted on a susceptor is brought close to a source transfer channel array in the thin film deposition apparatus of FIG. 1 .
Figure 3 is a cross-sectional view schematically showing a thin film deposition apparatus for forming a patterned thin film, according to another embodiment of the present invention.
Figure 4 is a cross-sectional view schematically showing a thin film deposition apparatus for forming a patterned thin film, according to another embodiment of the present invention.
Figure 5 is a cross-sectional view for explaining a thin film deposition apparatus according to another embodiment of the present invention.
Figure 6 is a cross-sectional view illustrating a thin film deposition apparatus according to another embodiment of the present invention.
FIG. 10 is a plan view illustrating a portion of a first source transfer channel array that can be applied to a thin film deposition apparatus according to an embodiment of the present invention.
11 is a plan view illustrating a portion of a first source transfer channel array that can be applied to a thin film deposition apparatus according to an embodiment of the present invention.
FIG. 12 is a plan view illustrating a portion of a third source transfer channel array that can be applied to a thin film deposition apparatus according to an embodiment of the present invention.
Figures 13a to 13g are plan views for explaining a method of manufacturing an organic light emitting device (OLED) using a thin film deposition apparatus according to an embodiment of the present invention.
14A to 14E are cross-sectional views for explaining a method of manufacturing an organic light emitting device (OLED) using a thin film deposition apparatus according to an embodiment of the present invention.
Figure 15 is an optical micrograph showing a patterned thin film prepared according to one embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings.

The embodiments of the present invention described below are provided to explain the present invention more clearly to those skilled in the art, and the scope of the present invention is not limited by the examples below. The embodiment may be modified in several different forms.

The terms used herein are used to describe specific embodiments and are not intended to limit the invention. As used herein, singular terms may include plural forms unless the context clearly indicates otherwise. Additionally, as used herein, the terms “comprise” and/or “comprising” refer to the term “comprise” and/or “comprising” to specify the presence of the mentioned shapes, steps, numbers, operations, members, elements and/or groups thereof. and does not exclude the presence or addition of one or more other shapes, steps, numbers, operations, members, elements and/or groups thereof. In addition, the term "connection" used in this specification not only means that certain members are directly connected, but also includes indirectly connected members with other members interposed between them.

In addition, when a member is said to be located “on” another member in the present specification, this includes not only the case where a member is in contact with another member, but also the case where another member exists between the two members. As used herein, the term “and/or” includes any one and all combinations of one or more of the listed items. In addition, terms such as “about” and “substantially” used in the specification herein are used in the sense of a range or close to the numerical value or degree, taking into account unique manufacturing and material tolerances, and to aid understanding of the present application. Precise or absolute figures provided for this purpose are used to prevent infringers from taking unfair advantage of the stated disclosure.

Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings. The size or thickness of areas or parts shown in the attached drawings may be somewhat exaggerated for clarity of specification and convenience of explanation. Like reference numerals refer to like elements throughout the detailed description.

1 is a cross-sectional view schematically showing a thin film deposition apparatus for forming a patterned thin film, according to an embodiment of the present invention.

Referring to FIG. 1, the thin film deposition apparatus for forming a patterned thin film according to this embodiment may include a source container 10 containing a source material. Source container 10 may be configured to vaporize or evaporate the source material. Thereby, the gaseous source material can be generated from the source container 10.

The thin film deposition apparatus may include a gas injecting head 20 for supplying the gaseous source material delivered from the source container 10 to a given area for thin film formation. The gas injection head 20 may be referred to as a 'vapor injector', a 'vapor providing head', or a 'shower head'. The gas injection head 20 may supply the gaseous source material in a downward direction. In the case of a horizontal vapor deposition device, the injection surface of the gas injection head 20 and the main surface of the substrate are arranged parallel to the vertical direction to the ground so that the gas injection head 20 can supply the gaseous source material in a horizontal direction. It can be.

The thin film deposition apparatus may include a susceptor 30 disposed opposite to the gas injection head 20. The following examples describe a top-down deposition apparatus in which the source material is supplied in a downward direction, but can equally be applied to a horizontal vapor deposition apparatus. A substrate (SUB1) on which a thin film is to be deposited may be placed on the upper surface of the susceptor 30, and the susceptor 30 may support the placed substrate (SUB1). The susceptor 30 may be considered a type of substrate support or substrate holder.

The thin film deposition apparatus may include a source delivery channel array 40 disposed between the gas injection head 20 and the substrate SUB1 mounted on the susceptor 30. The source transfer channel array 40 may serve to define the pattern of the thin film formed on the substrate SUB1. That is, the source transfer channel array 40 may have an opening pattern for defining the pattern of the thin film formed on the substrate SUB1, and the gaseous source material may be transmitted to a given area of the substrate SUB1 through the opening pattern. It can play a role in conveying. In one embodiment, where the pattern of thin films are pixels of a display, the aperture pattern has a size and shape corresponding to the pixels, and has an array corresponding to the array of pixels across the source delivery channel array 40. You can. In one embodiment, the size of the channel may be the same as the size of the pixel. If necessary, the size of the channel may be slightly larger than the size of the pixel. For example, the size of the channel may be 2% to 30% larger than the size of the pixel. For example, the width of the channel may be about 2% to 30% larger than the width of the pixel.

The source delivery channel array 40 provides a boundary between the gaseous source material inside the gas injection head 20 and the substrate (SUB1) on which the thin film is to be formed, and the channels of the source delivery channel array 40 provide the gaseous source material. This is the passage that passes through. The straight path of the gaseous source material may be improved as it passes through the channel. To this end, the size of the channel may have a greater length compared to the mean free path within the gas injection head 20 under process pressure. As the gaseous source material passes through the channel, it collides with or reflects on the channel wall, and its direction of travel is changed in the direction perpendicular to the surface of the substrate (SUB1), reaching the surface of the substrate (SUB1), resulting in a shadowing effect. It is significantly reduced or does not appear in the source delivery channel array 40. In one embodiment, the length of the channels of the source delivery channel array 40 may be 20 μm to 1 cm, and the thickness of the source delivery channel array 40 may be substantially equal to the length of the channels.

In this embodiment, a fixing member 25 for fixing the source delivery channel array 40 may be further provided at the lower part of the gas injection head 20 or an area adjacent thereto, and the fixing member 25 may be used to secure the source. The delivery channel array 40 can be fixed to the lower part of the gas injection head 20 or released. In one embodiment, the source delivery channel array 40 can be attached and detached to the lower end of the gas injection head 20 using the fixing member 25. Accordingly, replacement and management of the source delivery channel array 40 may be easy. The fixing member 40 may be a known fixing means such as a fastening member such as a bolt, a clamp, or a magnetic relief body, but the present invention is not limited thereto.

Below, a thin film deposition apparatus according to an embodiment of the present invention will be described in more detail.

The gaseous source material generated in the source container 10 may be transferred to the gas injection head 20. At this time, the gaseous source material may be transferred to the gas injection head 20 by a predetermined carrier gas (G10). A first supply pipe (P10) may be provided between the source container 10 and the gas injection head 20, and the gaseous source material may be supplied through the first supply pipe (P10). Reference number A10 indicates the movement path of the gaseous source material. The first supply pipe (P10) may be connected to one end of the source container (10). The other end of the source container 10 may be provided with a carrier gas supply pipe (P11) for supplying the carrier gas (G10). Reference number A11 indicates the movement path of the carrier gas (G10). The gaseous source material may be transferred to the gas injection head 20 together with the carrier gas (G10). The carrier gas (G10) may be an inert gas. The inert gas may be, for example, nitrogen (N ₂ ) gas or argon (Ar) gas.

The temperature of the gaseous source material in the source container 10 may be as high as, for example, about 300°C to 400°C. In order to control the temperature of this high-temperature source material (the gaseous source material), a 'temperature reduction means' (cooling means or cooling system) may be used. That is, a 'temperature reducing means' may be used to lower the temperature of the gaseous source material generated from the source container 10 and transferred to the substrate SUB1 through the gas injection head 20. For example, the temperature reduction means may include a cooling gas supply unit for supplying cooling gas CG1 into the gas injection head 20. Cooling gas CG1 may be supplied through the second supply pipe P20. The second supply pipe (P20) may be connected to the first supply pipe (P10). Reference number A20 indicates the movement path of the cooling gas (CG1). The cooling gas (CG1) may be an inert gas. The inert gas may be, for example, nitrogen (N ₂ ) gas or argon (Ar) gas. The cooling gas CG1 supplied through the second supply pipe P20 may be mixed with the gaseous source material supplied through the first supply pipe P10 and then transferred to the gas injection head 20. The temperature of the cooling gas CG1 may be, for example, about 100°C to about 300°C. If the temperature of the gas phase source material is excessively or suddenly lowered from the gas phase state, it may not be easy to form a thin film. Therefore, when cooling using the cooling gas (CG1), cooling is performed within an appropriate range. can do. In this regard, the temperature of the cooling gas CG1 may preferably be on the order of about 200°C to about 300°C. This will be explained in more detail later.

Gas injection head 20, susceptor 30, and source delivery channel array 40 may be disposed within deposition chamber CH10. A gas injection head 20 may be disposed at the inner top (or an area adjacent to the top) of the deposition chamber CH10, and the susceptor 30 may be disposed below in a direction perpendicular to the gas injection head 20. The source delivery channel array 40 may be disposed between the gas injection head 20 and the susceptor 30.

The susceptor 30 may serve to control the temperature of the substrate SUB1 while supporting the substrate SUB1. While performing the thin film deposition process, the temperature of the susceptor 30 may be adjusted, for example, to a range of 10°C to 90°C. Accordingly, the substrate SUB1 is heated by the vapor phase precursor reaching the substrate SUB1, but the temperature of the substrate SUB1 is reduced by the susceptor 30, and the vapor phase source material at the surface of the substrate SUB1 Thin film formation can be easily achieved by condensation. This will be explained in more detail later.

The susceptor 30 may be configured to adjust its height. That is, the height of the susceptor 30 may be adjustable with respect to the gas injection head 20. In this regard, a predetermined support 35 may be disposed on the lower surface of the susceptor 30, and the height of the susceptor 30 may be adjusted by moving the support 35 up and down. A portion of the support 35 may extend outside the deposition chamber CH10.

In the actual thin film deposition process, as shown in FIG. 2, the height of the susceptor 30 is adjusted so that the upper surface of the substrate (SUB1) mounted on the susceptor 30 is the lower surface of the source delivery channel array 40. After being placed in contact with, a thin film deposition process can be performed. An alignment process of the source delivery channel array 40 and the substrate SUB1 may be performed to form a patterned thin film.

Figure 3 is a cross-sectional view schematically showing a thin film deposition apparatus for forming a patterned thin film, according to another embodiment of the present invention. The thin film deposition apparatus according to this embodiment may have structural differences from the thin film deposition apparatus of FIG. 1 in the structure for mounting/fixing the source delivery channel array 40. Below, the description of FIG. 3 will focus on differences from the structure of FIG. 1.

Referring to FIG. 3 , the thin film deposition apparatus according to this embodiment may further include a channel array support member 45 for supporting the source delivery channel array 40. For example, the channel array support member 45 may be installed in contact with or connected to the inner wall of the deposition chamber CH20. The channel array support member 45 may have an opening area N1 corresponding to the main area of the source delivery channel array 40 and is configured to support an edge area around the main area of the source delivery channel array 40. It can be. Additionally, the gap between the channel array support member 45 and the gas injection head 20 and/or the gap between the source delivery channel array 40 disposed on the channel array support member 45 and the gas injection head 20 may be adjustable. That is, the height of the channel array support member 45 relative to the gas injection head 20 may be adjusted, and/or the height of the source delivery channel array 40 relative to the gas injection head 20 may be adjusted. Accordingly, replacement and management of the source delivery channel array 40 may be easy. However, the structure and features of the channel array support member 45 shown here are exemplary and may vary depending on the case.

Figure 4 is a cross-sectional view schematically showing a thin film deposition apparatus for forming a patterned thin film, according to another embodiment of the present invention. The thin film deposition apparatus according to this embodiment may have structural differences from the thin film deposition apparatus of FIGS. 1 and 2 in the structure for mounting/fixing the source transfer channel arrays 40a and 40b. Below, the description of FIG. 4 will focus on differences from the structure of FIGS. 1 and 2.

Referring to FIG. 4 , the thin film deposition apparatus according to this embodiment may include a channel array switching unit MC10 capable of moving the positions of the source delivery channel arrays 40a and 40b while supporting them. The channel array switching unit (MC10) may also be referred to as a 'channel array support and switching unit'.

For example, the channel array switching unit MC10 is connected to the motor unit 46, the rotation axis 47 connected to the motor unit 46, and the channel array support plate ( 48) may be included. The rotation shaft 47 may have a cylindrical structure or a shaft structure, and may be mechanically connected to the rotor of the motor unit 46.

The channel array support plate 48 may include at least a first channel array seating portion (S1) and a second channel array seating portion (S2). The first channel array seating portion S1 and the second channel array seating portion S2 may be arranged to be spaced apart from each other in the horizontal direction. The source transmission channel arrays 40a and 40b include a first source transmission channel array 40a mounted on the first channel array seating portion S1 and a second source transmission channel array mounted on the second channel array seating portion S2. (40b) may be included. The first channel array seating portion S1 may have an opening area corresponding to the main area of the first source transfer channel array 40a, and may have an edge area around the main area of the first source transfer channel array 40a. It can be configured to support. Similarly, the second channel array seating portion S2 may have an opening area corresponding to the main area of the second source delivery channel array 40b, and may have an opening area around the main area of the second source delivery channel array 40b. It may be configured to support the edge area of.

The first channel array seating portion S1 or the second channel array seating portion S2 may be disposed between the gas injection head 20 and the substrate SUB1 by rotating the rotation axis 47. Channel array support plate 48 may be disposed within deposition chamber CH30. Here, the deposition chamber CH30 may include a main chamber part CH30a and an auxiliary chamber part CH30b extending therefrom. The auxiliary chamber part (CH30b) may extend to one side of the main chamber part (CH30a). A gas injection head 20 and a susceptor 30 may be disposed in the main chamber portion (CH30a). According to this, the gas injection head 20 and the source delivery channel arrays 40a and 40b have separate configurations.

Any one of the first and second channel array seating portions (S1, S2) of the channel array support plate 48 may be disposed in the main chamber portion (CH30a), and the first and second channel array seating portions (S1, The other one of S2) may be disposed in the auxiliary chamber part (CH30b). Accordingly, one of the first and second source delivery channel arrays 40a and 40b may be disposed within the main chamber portion CH30a, and the other of the first and second source delivery channel arrays 40a and 40b may be disposed within the main chamber portion CH30a. It may be placed in the auxiliary chamber part (CH30b). Additionally, the auxiliary chamber portion (CH30b) may be provided with an opening/closing portion (D1) that can be opened and closed for channel array replacement. Channel array replacement can be easily performed by opening the switch (D1). The switch (D1) can be said to be a kind of 'channel array change port (mask change port)'. Meanwhile, the motor unit 46 may be placed at the top of one side of the main chamber unit (CH30a) or in an area adjacent thereto, and the rotation axis 47 may be placed in the main chamber unit (CH30a) below the motor unit 46. It can be.

A gap between the channel array support plate 48 and the gas injection head 20 and/or a gap between the source delivery channel array 40a or 40b disposed on the channel array support plate 48 and the gas injection head 20. may be adjustable. The height of the channel array support plate 48 relative to the gas injection head 20 may be adjusted, and/or the height of the source delivery channel array 40a or 40b relative to the gas injection head 20 may be adjusted.

The structure and features of the channel array switching unit MC10 shown here are illustrative and may vary depending on the case. For example, here, the channel array support plate 48 is provided with first and second channel array seating portions S1 and S2, and first and second source transmission channel arrays 40a and 40b are provided thereon, respectively. Although the case is shown and described, in other embodiments, three or more channel array mounting units may be provided, and different source transmission channel arrays may be provided on the three or more channel array seating units.

In addition, although not shown in FIGS. 1 to 4, an exhaust port may be provided at the bottom of the deposition chamber (CH10, CH20, CH30) or in an area adjacent to the bottom.

The thin film deposition apparatus according to the embodiments described above may be an apparatus for depositing a patterned organic thin film. Accordingly, the above-described source material may be organic or may contain organic matter as a major component. The above-mentioned gaseous source material may also be organic or contain organic matter as a major component. The patterned thin film formed on the substrate SUB1 may be an organic thin film. A patterned thin film formed using the thin film deposition apparatus according to the embodiment may be, for example, a light emitting layer pattern of an organic light emitting device (OLED). In this case, the source transfer channel array (40 in FIGS. 1 and 3, 40a in FIG. 4, or 40b in FIG. 4) has a configuration for forming an organic light-emitting layer pattern corresponding to the pixel area of the organic light-emitting device (OLED). You can. For example, the source delivery channel array (40 in FIGS. 1 and 3, 40a in FIG. 4, or 40b in FIG. 4) includes a red (R) organic emission layer pattern, a green (G) organic emission layer pattern, and a blue (B) organic emission layer pattern. It may have a configuration for forming any one of the light emitting layer patterns.

A method of forming a patterned thin film using a thin film deposition apparatus according to an embodiment of the present invention may be completely different from a vacuum deposition method using a conventional metal mask. In the conventional vacuum deposition method using a metal mask, deposition is performed with a metal mask and a substrate placed above an evaporation source. In the vacuum deposition method using such a conventional metal mask, a sagging problem occurs when the substrate and the metal mask are thin and have a large area. The sagging of the substrate and metal mask increases as the size of the substrate increases, which may cause problems such as defects such as scratches or pixels not being accurately implemented. This problem can be a significant impediment to improving (increasing) the area and resolution of the display.

However, when using the thin film deposition apparatus according to an embodiment of the present invention, the source delivery channel arrays 40, 40a, 40b and the substrate SUB1 are disposed below the gas injection head 20, and the evaporation occurs Since thin film deposition can be performed using a gaseous source material, problems such as sagging of the source transfer channel arrays 40, 40a, 40b and the substrate SUB1 can be fundamentally prevented. By using the thin film deposition device according to the embodiment, a patterned thin film, for example, an organic thin film, can be easily/precisely formed without problems such as sagging of the source delivery channel arrays 40, 40a, 40b and the substrate SUB1. can be formed. This thin film deposition device can be easily applied to the manufacture of various electronic devices, and in particular, can be advantageously applied to the manufacture of organic light-emitting devices (OLED) with excellent performance and high resolution/large area.

In addition, when using the thin film deposition apparatus according to an embodiment of the present invention, the gaseous source material introduced from the gas injection head 20 is on the substrate SUB1 through the channels of the source delivery channel arrays 40, 40a, and 40b. Since the gaseous source material is transmitted through the channels, thin film deposition can be performed while ensuring the straight path of the gaseous source material. As a result, according to an embodiment of the present invention, a shadowing effect such as that in the existing metal mask (MM) may not occur, and implementation of a fine pattern may be facilitated. With respect to the arrangement relationship between the gas injection head 20, the source delivery channel arrays 40, 40a, 40b, and the substrate SUB1, and the configuration/structure of the source delivery channel arrays 40, 40a, 40b, the gaseous source The straightness of the material can be easily secured, and the deposition of a thin film with a fine pattern can be possible without shadowing problems.

In the thin film deposition apparatus according to an embodiment of the present invention, the susceptor 30 on which the substrate SUB1 is placed may be maintained at a temperature of, for example, about 50° C. or lower. The temperature of the gaseous source material evaporated from the source container 10 and supplied to the gas injection head 20 may be as high as, for example, about 300°C to 400°C. Since the temperature when the gaseous source material is evaporated and reaches the gas injection head 20 is quite high, the temperature of the substrate SUB1 may be quite low, the gaseous source material is evaporated and reaches the gas injection head 20. It may experience a temperature drop as it reaches the substrate (SUB1). As a result, a thin film may be deposited on the surface of the substrate SUB1 by condensation of the gaseous source material. However, if the temperature of the gaseous source material is lowered below the critical temperature before it reaches the surface of the substrate SUB1, the gaseous source material is condensed in advance before reaching the substrate SUB1, thereby preventing proper thin film formation. It may not come true. In this regard, when the gaseous source material reaches the surface of the substrate SUB1, the temperature of the gaseous source material may preferably be in the range of about 180°C to 250°C. These temperature conditions may vary depending on the type of source material or other process conditions.

The temperature of the gaseous source material and the substrate (SUB1) such that the gaseous source material does not condense in the gaseous phase before reaching the surface of the substrate (SUB1), but reaches the surface of the substrate (SUB1) and becomes thin due to condensation. It may be desirable to control . If the temperature of the gaseous source material is too high or too low when it reaches the surface of the substrate SUB1, thin film formation may not occur properly. If the temperature of the gaseous source material is excessively high when it reaches the surface of the substrate SUB1, the thin film may not be formed properly due to a rapid temperature drop on the surface of the substrate SUB1. In addition, when the temperature of the gaseous source material is lowered below the critical temperature before it reaches the surface of the substrate SUB1, the gaseous source material is pre-condensed in the gaseous phase before reaching the substrate SUB1 (i.e. , nucleation may occur) and thin film formation may not occur properly. Therefore, the gaseous source material and the substrate do not condense in the gaseous phase before reaching the surface of the substrate SUB1, but so that thinning due to condensation is smoothly achieved by reaching the surface of the substrate SUB1. It may be desirable to control the temperature of (SUB1). In this regard, a 'temperature reduction means' may be used to lower the temperature of the gaseous source material generated from the source container 10 and transferred to the substrate SUB1 through the gas injection head 20. Below, specific examples of the temperature reducing means and the configuration of the gas injection head will be described in more detail with reference to FIGS. 5 and 6.

Figure 5 is a cross-sectional view for explaining a thin film deposition apparatus according to another embodiment of the present invention.

Referring to FIG. 5, a gas injection head 20A that can be applied to the thin film deposition apparatus according to this embodiment is shown. A first supply pipe (P10) may be connected to the upper part of the gas injection head (20A), and the gaseous source material (SG1) may be supplied through the first supply pipe (P10). The temperature of the gaseous source material SG1 generated in the source container (eg, 10 in FIG. 1 ) may be as high as, for example, about 300°C to 400°C.

A second supply pipe (P20) for injecting the cooling gas (CG1) may be connected to the first supply pipe (P10). The cooling gas CG1 supplied through the second supply pipe P20 may be mixed with the gaseous source material SG1 supplied through the first supply pipe P10 and then transferred to the gas injection head 20A. The temperature of the cooling gas CG1 may be, for example, about 100°C to 300°C. The cooling gas (CG1) may serve to appropriately lower the temperature of the gaseous source material (SG1). The cooling gas (CG1) may be an inert gas.

The gas injection head 20A may include a diaphragm DP10 in which a plurality of holes h10 are formed at a predetermined distance apart from its upper surface. The diaphragm DP10 may be arranged to cross the interior of the gas injection head 20A. A plurality of holes h10 may be formed regularly or uniformly distributed in the diaphragm DP10. A mixed gas of the gaseous source material (SG1) and the cooling gas (CG1) may be dispersed and flow down through the plurality of holes (h10). Diaphragm DP10 is exemplary and may be applied to the gas injection heads of FIGS. 1 to 3 or may be omitted or replaced by another suitable gas mixing system.

A cooling channel (CC10) may be formed within the side wall portion (W10) of the gas injection head (20A). By flowing (circulating) a cooling fluid (not shown) through the cooling channel (CC10), a cooling process for the gaseous source material (SG1) can be additionally performed. Accordingly, the temperature of the gaseous source material SG1 may be gradually (or stepwise) lowered by the cooling gas CG1 and the cooling fluid.

In FIG. 5 , the configuration for supplying the cooling gas CG1 and the cooling channel CC10 provided within the side wall portion W10 of the gas injection head 20A may be examples of the above-mentioned 'temperature reduction means'. In some cases, the cooling channel (CC10) may not be used.

In this embodiment, the source delivery channel array 40 may be fixed to the lower part of the gas injection head 20A or an area adjacent thereto. A fixing member (25 in FIG. 1) for fixing the source delivery channel array 40 may be further provided. The source delivery channel array 40 may be secured to or released from the lower portion of the gas injection head 20 . In one embodiment, the source delivery channel array 40 can be attached and detached to the lower end of the gas injection head 20A using the fixing member 25. Accordingly, replacement and management of the source delivery channel array 40 may be easy. When forming a thin film, the susceptor 30 may move upward, or the singer injection head 20A may move downward, as shown by arrow K, so that the source delivery channel array 40 contacts the upper surface of the substrate SUB1. there is.

In FIG. 5 , a case in which the cooling gas CG1 is supplied through one supply pipe P20 is shown and explained. However, according to another embodiment, a plurality of cooling gases may be supplied through a plurality of supply pipes. An example is shown in Figure 6.

Figure 6 is a cross-sectional view illustrating a thin film deposition apparatus according to another embodiment of the present invention.

Referring to FIG. 6, the first cooling gas (CG1) may be supplied to the first supply pipe (P10) through the 2-1 supply pipe (P21), and separately, the second cooling gas (CG2) may be supplied to the first supply pipe (P10) through the 2-1 supply pipe (P21). -2 It can be supplied to the first supply pipe (P10) through the supply pipe (P22). The 2-1 supply pipe (P21) and the 2-2 supply pipe (P22) may be arranged to be spaced apart from each other.

After first lowering the temperature of the gaseous source material (SG1) using the first cooling gas (CG1), the temperature of the gaseous source material (SG1) can be lowered secondarily using the second cooling gas (CG2). . Accordingly, a gradual/stepwise temperature reduction of the gaseous source material (SG1) may be possible. The temperature of the first cooling gas CG1 may be, for example, about 220°C to 300°C. The temperature of the second cooling gas (CG2) may be lower than the temperature of the first cooling gas (CG1). The temperature of the second cooling gas CG2 may be, for example, about 200°C to 250°C. However, the temperature conditions of the first and second cooling gases CG1 and CG2 are merely exemplary and may change depending on the case. Additionally, it is possible to supply multiple cooling gases through three or more supply pipes. Additionally, in the embodiment of FIG. 6, the cooling channel CC10 may not be used.

In this embodiment, as described with reference to FIG. 5, the source delivery channel array 40 may be fixed to the lower part of the gas injection head 20B or an area adjacent thereto, and the source delivery channel array 40 may be fixed. A fixing member (see 25 in FIG. 1) may be further provided, and the source delivery channel array 40 can be fixed to or released from the lower part of the gas injection head 20B using the fixing member 25. there is. If necessary, the source delivery channel array 40 may be replaced with a source delivery channel array having a different pattern for each thin film forming process for pixel implementation using an appropriate rotor system. In addition, although not shown, a gas mixing member such as a diaphragm DP10 may be further provided inside the gas injection head 20B, as described with reference to FIG. 6 .

According to another embodiment of the present invention, the temperature reduction means may further include a cooling means for cooling the source transfer channel arrays 40, 40a, and 40b. For example, by forming a cooling line (cooling channel) at the edge of the source delivery channel array (40, 40a, 40b) and circulating cooling gas or coolant through the cooling line, the source delivery channel array ( The temperature of 40, 40a, 40b) can be appropriately controlled (reduced). A case where a cooling means for cooling the source delivery channel arrays 40, 40a, and 40b is further added to the thin film deposition apparatus according to the embodiment of FIGS. 1, 3, and 4 is shown in FIGS. 7, 8, and 9, respectively. It is shown.

Referring to FIG. 7 , a cooling means for cooling the source transfer channel array 40 may be further added to the thin film deposition apparatus according to the embodiment of FIG. 1 . The cooling means may be configured, for example, to supply cooling gas CG2 to cooling channels formed in the source delivery channel array 40 . In FIG. 7 , reference number P30 indicates a connector for supplying cooling gas (CG2) to the source delivery channel array 40.

Referring to FIG. 8 , a cooling means for cooling the source transfer channel array 40 may be further added to the thin film deposition apparatus according to the embodiment of FIG. 3 . The cooling means may be configured, for example, to supply cooling gas CG2' to cooling channels formed in the source delivery channel array 40. In FIG. 8 , reference number P30' denotes a connector for supplying cooling gas CG2' to the source delivery channel array 40.

Referring to FIG. 9 , a plurality of cooling means for cooling the plurality of source transfer channel arrays 40a and 40b, respectively, may be added to the thin film deposition apparatus according to the embodiment of FIG. 4 . For example, the plurality of cooling means supplies the 2-1 cooling gas (CG21) to the cooling channel formed in the first source delivery channel array 40a, and also supplies the second source delivery channel array 40b. It may be configured to supply the 2-2 cooling gas (CG22) to the formed cooling channel. In FIG. 9, reference number P31 indicates a first connector for supplying the 2-1 cooling gas (CG21) to the first source delivery channel array 40a, and reference number P32 indicates a second source delivery channel array 40b. A second connection pipe for supplying the 2-2 cooling gas (CG21) is shown. Three or more source delivery channel arrays may be provided, and cooling means for cooling each source delivery channel array may be provided. In this case, each of the plurality of source delivery channel arrays can be easily controlled individually to different temperatures. Since the appropriate temperature may be different when forming different pixel parts (ex, R/G/B emitting layer) of an organic light emitting device (OLED), individual temperature control as described above is necessary in the manufacturing of an organic light emitting device (OLED). It can be usefully applied.

FIG. 10 is a plan view illustrating a portion of the first source transfer channel array M10 that can be applied to a thin film deposition apparatus according to an embodiment of the present invention. The first source transmission channel array M10 may have a plurality of first opening areas H10. Similarly, FIG. 11 is a plan view illustrating a portion of the first source transfer channel array M10 that can be applied to a thin film deposition apparatus according to an embodiment of the present invention. The second source transmission channel array M20 may have a plurality of second opening areas H20. FIG. 12 is a plan view illustrating a portion of the third source transfer channel array M30 that can be applied to a thin film deposition apparatus according to an embodiment of the present invention. The third source transmission channel array M30 may have a plurality of third opening areas H30.

The first source transmission channel array M10 of FIG. 10 is one of the red (R) organic emission layer pattern, the green (G) organic emission layer pattern, and the blue (B) organic emission layer pattern of the organic light emitting device (OLED), for example, red. (R) May have a configuration for forming an organic light-emitting layer pattern. The second source transmission channel array M20 of FIG. 11 is one of the red (R) organic emission layer pattern, the green (G) organic emission layer pattern, and the blue (B) organic emission layer pattern of the organic light emitting device (OLED), for example, green. (G) It may have a configuration for forming an organic light-emitting layer pattern. Likewise, the third source transmission channel array M30 of FIG. 12 is another one of the red (R) organic light emitting layer pattern, green (G) organic light emitting layer pattern, and blue (B) organic light emitting layer pattern of the organic light emitting device (OLED), For example, it may have a configuration for forming a blue (B) organic emission layer pattern. Additionally, in some cases, a predetermined open mask member may be applied as the source transfer channel array to the thin film deposition apparatus according to an embodiment of the present invention.

Figures 13a to 13g are plan views for explaining a method of manufacturing an organic light emitting device (OLED) using a thin film deposition apparatus according to an embodiment of the present invention.

Referring to FIG. 13A, a predetermined substrate portion 100 may be prepared. The substrate unit 100 may include a substrate for forming an organic light emitting device (OLED) and a predetermined lower structure provided on the upper surface of the substrate.

13B and 13C, a first source transmission channel array having a plurality of first opening areas H10 (i.e., a first opening pattern) corresponding to a plurality of first pixel areas on the substrate 100. After disposing (M10), a patterned first organic material layer 310 may be formed in the plurality of first opening regions (H10) defined by the first source transfer channel array (M10). That is, the patterned first organic material layer 310 may be formed in the plurality of first opening regions H10 corresponding to the plurality of first pixel regions. Then, the first source transmission channel array M10 can be removed from the substrate 100. The result may be as shown in Figure 13c.

The patterned first organic material layer 310 may be a first organic light-emitting layer. The first organic light-emitting layer may be any one of a red (R) light-emitting layer, a green (G) light-emitting layer, and a blue (B) light-emitting layer of an organic light-emitting device (OLED). For example, the first organic light-emitting layer may be a red light-emitting layer. In this case, any organic material used in the red light-emitting layer of a general organic light-emitting device (OLED) may be used as the material for the first organic light-emitting layer.

13D and 13E, a second source transmission channel array having a plurality of second opening areas H20 (i.e., a second opening pattern) corresponding to a plurality of second pixel areas on the substrate 100. After disposing (M20), a patterned second organic material layer 320 may be formed in the plurality of second opening regions (H20) defined by the second source transfer channel array (M20). That is, the patterned second organic material layer 320 may be formed in the plurality of second opening regions H20 corresponding to the plurality of second pixel regions. Then, the second source transmission channel array M20 can be removed from the substrate 100. The result may be as shown in Figure 13e.

The patterned second organic material layer 320 may be a second organic light-emitting layer. The second organic light-emitting layer may be any one of a red (R) light-emitting layer, a green (G) light-emitting layer, and a blue (B) light-emitting layer of an organic light-emitting device (OLED). For example, the second organic light-emitting layer may be a green light-emitting layer. In this case, any organic material used in the green light-emitting layer of a general organic light-emitting device (OLED) may be used as the material for the second organic light-emitting layer.

As shown in FIG. 13E, a patterned second organic material layer 320 may be formed on the substrate 100. The second patterned organic material layer 320 may be disposed adjacent to the first patterned organic material layer 310.

13F and 13G, a third source transmission channel array having a plurality of third opening areas H30 (i.e., a third opening pattern) corresponding to a plurality of third pixel areas on the substrate 100. After disposing (M30), a patterned third organic material layer 330 may be formed in the plurality of third opening regions (H30) defined by the third source transfer channel array (M30). That is, a patterned third organic material layer 330 may be formed in the plurality of third opening regions H30 corresponding to the plurality of third pixel regions. Then, the third source transmission channel array (M30) can be removed from the substrate unit 100. The result may be as shown in Figure 13g.

The patterned third organic material layer 330 may be a third organic light-emitting layer. The third organic light-emitting layer may be any one of a red (R) light-emitting layer, a green (G) light-emitting layer, and a blue (B) light-emitting layer of an organic light-emitting device (OLED). For example, the third organic light-emitting layer may be a blue light-emitting layer. In this case, any organic material used in the blue light-emitting layer of a general organic light-emitting device (OLED) may be used as the material for the third organic light-emitting layer.

As shown in FIG. 13g, a patterned third organic material layer 330 may be formed on the substrate 100. The third patterned organic material layer 320 may be disposed adjacent to the first patterned organic material layer 310 and the second patterned organic material layer 320. The first to third organic material layers 310, 320, and 330 can be said to constitute one 'light-emitting layer'. Thereafter, although not shown, an upper structure including a predetermined organic layer and an electrode may be further formed on the first to third organic material layers 310, 320, and 330.

According to an embodiment of the present invention, the first to third organic material layers 310, 320, and 330 are formed by a method using the thin film deposition apparatus described with reference to FIGS. 1 to 6 rather than a vacuum deposition method using a conventional metal mask. can be formed. Therefore, various problems and limitations of vacuum deposition using a conventional metal mask can be overcome, and organic light emitting devices (OLEDs) with excellent performance and high resolution can be easily manufactured.

14A to 14E are cross-sectional views for explaining a method of manufacturing an organic light emitting device (OLED) using a thin film deposition apparatus according to an embodiment of the present invention.

Referring to FIG. 14A, the first electrode member 111 may be formed on a predetermined substrate 101. The substrate 101 may be a transparent substrate such as a glass substrate. In addition to glass, other materials such as transparent polymers may also be used as materials for the substrate 101. The first electrode member 111 may include a plurality of first electrode elements 11. For example, the plurality of first electrode elements 11 may be arranged side by side while extending in the first direction. The plurality of first electrode elements 11 may be arranged to respectively correspond to the plurality of pixel areas P1, P2, and P3.

Next, the hole injection layer 121 and the hole transport layer 131 may be sequentially formed on the first electrode member 111. The hole injection layer 121 and the hole transport layer 131 may be formed entirely to cover the plurality of pixel areas (P1, P2, and P3).

Although not shown, in some cases, the space between the plurality of first electrode elements 11 may be filled with an insulating material. Alternatively, a portion of the hole injection layer 121 may be provided to fill the space between the plurality of first electrode elements 11.

The first pixel area P1 may be a red pixel area, the second pixel area P2 may be a green pixel area, and the third pixel area P3 may be a blue pixel area. The following description is based on the case where the first pixel area P1 is a red pixel area, the second pixel area P2 is a green pixel area, and the third pixel area P3 is a blue pixel area. However, the colors displayed by the first to third pixel areas (P1, P2, and P3) may vary.

Referring to FIG. 14B, the first organic light emitting layer 311 disposed corresponding to the first pixel area P1 may be formed on the hole transport layer 131. The method of forming the first organic light-emitting layer 311 may be the same or similar to the method of forming the first organic material layer 310 described with reference to FIGS. 13B and 13C. The first organic light-emitting layer 311 may correspond to the first organic material layer 310 of FIG. 13C.

Referring to FIG. 14C, a second organic light emitting layer 321 disposed corresponding to the second pixel area P2 may be formed on the hole transport layer 131. The method of forming the second organic light emitting layer 321 may be the same or similar to the method of forming the second organic material layer 320 described with reference to FIGS. 13D to 13E. The second organic light-emitting layer 321 may correspond to the second organic material layer 320 of FIG. 13E.

Referring to FIG. 14D, a third organic light emitting layer 331 disposed corresponding to the third pixel area P3 may be formed on the hole transport layer 131. The method of forming the third organic light emitting layer 331 may be the same or similar to the method of forming the third organic material layer 330 described with reference to FIGS. 13F to 13G. The third organic light-emitting layer 331 may correspond to the third organic material layer 330 of FIG. 13g. The first to third organic light emitting layers 311, 321, and 331 may be collectively referred to as one light emitting layer 301.

Referring to FIG. 14E, the electron transport layer 411 and the electron injection layer 421 may be formed sequentially on the light emitting layer 301. The electron transport layer 411 and the electron injection layer 421 may be formed entirely to cover the plurality of pixel areas (P1, P2, and P3).

Next, the second electrode member 431 may be formed on the electron injection layer 421. The second electrode member 431 may include a plurality of second electrode elements 21. Here, for convenience, the plurality of second electrode elements 21 are shown extending in the same direction as the plurality of first electrode elements 11, but the plurality of second electrode elements 21 are formed as a plurality of first electrode elements. It may have a structure extending in a direction different from (11), that is, in the second direction. The plurality of second electrode elements 21 may extend in a direction perpendicular to the plurality of first electrode elements 11.

The method of manufacturing an organic light emitting device (OLED) described with reference to FIGS. 13A to 13G and 14A to 14E is merely illustrative and may be modified in various ways depending on the case.

Figure 15 is an optical micrograph showing a patterned thin film prepared according to one embodiment of the present invention. The temperature of the substrate during deposition was 20°C, and deposition took about 10 minutes. The size of the open pattern of the metal mask is 1×2 mm, and the distance between pixels is 2 mm. It can be confirmed that a pixelated organic light-emitting thin film is formed through the downward gas supply method.

According to the embodiments of the present invention described above, a thin film deposition technology and a thin film deposition apparatus that can overcome various problems and limitations of the conventional vacuum deposition method using a metal mask can be implemented. By using the thin film deposition technology and thin film deposition apparatus according to the embodiment, a patterned thin film (ex, organic thin film) can be easily/precisely formed without problems such as sagging of the substrate or mask. In addition, by using the thin film deposition device according to an embodiment of the present invention, straightness of the gaseous source material transferred from the gas injection head to the substrate through the source delivery channel array can be secured, so that the existing metal mask (MM) Shadowing problems such as may not occur, and implementation of fine patterns may become easier. Additionally, according to embodiments of the present invention, various electronic devices can be easily manufactured using the thin film deposition technology and thin film deposition apparatus. In particular, using the thin film deposition technology and thin film deposition apparatus described above, organic light emitting devices (OLEDs) with excellent performance and high resolution can be more easily manufactured.

In this specification, preferred embodiments of the present invention are disclosed, and although specific terms are used, they are merely used in a general sense to easily explain the technical content of the present invention and aid understanding of the invention, and do not define the scope of the present invention. It is not intended to be limiting. It is obvious to those skilled in the art that in addition to the embodiments disclosed herein, other modifications based on the technical idea of the present invention can be implemented. Those skilled in the art will know that the thin film deposition apparatus and the device manufacturing method using the same according to the embodiments described with reference to FIGS. 1 to 15 can be used in various ways without departing from the technical spirit of the present invention. It will be appreciated that substitutions, changes and modifications may occur. Therefore, the scope of the invention should not be determined by the described embodiments, but by the technical idea stated in the patent claims.

* Explanation of symbols for main parts of the drawing *
10: Source container 20, 20A: Gas injection head
25: fixing member 30: susceptor
35: Support 40, 40a, 40b: Source delivery channel array
45: Channel array support member 46: Motor unit
47: rotation axis 48: channel array support plate
CG1, CG2: Cooling gas CH10, CH20, CH30: Deposition chamber
CC10: Cooling channel D1: Open/close section
DP10: Diaphragm G10: Carrier gas
h10: Hall MC10: Channel array switching unit
M10: first source delivery channel array M20: second source delivery channel array
M30: Third source delivery channel array N1: Aperture area
P10: First supply pipe P11: Carrier gas supply pipe
P20: Second supply pipe S1, S2: Channel array seating part
SUB1: Substrate 100: Substrate portion
101: substrate 111: first electrode member
121: hole injection layer 131: hole transport layer
301: light emitting layer 310: first organic material layer
311: first organic light-emitting layer 320: second organic material layer
321: second organic light-emitting layer 330: third organic material layer
331: third organic light-emitting layer 411: electron transport layer
421: electron injection layer 431: second electrode member

Claims (15)

A thin film deposition apparatus for forming a patterned thin film,
The patterned thin film is an organic thin film, the thin film deposition device is an organic thin film deposition device, and the thin film deposition device is,
A source container containing a source material, which evaporates the source material to generate a vapor source material;
a gas injection head for supplying the gaseous source material delivered from the source container to a given area for thin film formation;
A susceptor disposed opposite the gas injection head and supporting the substrate mounted on the upper or lower surface of the gas injection head;
a source delivery channel array disposed between the gas injection head and the substrate mounted on the susceptor, the source delivery channel array having an opening pattern for defining a pattern of a thin film formed on the substrate; and
Comprising a temperature reduction means for lowering the temperature of the gaseous source material generated from the source container and transferred to the substrate through the gas injection head,
The gaseous source material is transported to the gas injection head by a carrier gas,
The temperature reduction means includes a cooling gas supply unit for supplying a cooling gas separate from the carrier gas within the gas injection head, and the cooling gas is mixed with the gaseous source material,
The temperature reducing means further includes a cooling channel formed in a side wall of the gas injection head, and a cooling fluid flows through the cooling channel. According to claim 1,
A fixing member for fixing the source delivery channel array is further provided at the lower end of the gas injection head or in an area adjacent thereto,
A thin film deposition apparatus configured to attach and detach the source delivery channel array to a lower portion of the gas injection head using the fixing member. According to claim 1,
Further provided is a channel array support member for supporting the source delivery channel array,
the channel array support member has an opening area corresponding to a main area of the source delivery channel array and is configured to support an edge area around the main area of the source delivery channel array;
A thin film deposition apparatus configured to adjust a gap between the channel array support member and the gas injection head or a gap between the source delivery channel array disposed on the channel array support member and the gas injection head. According to claim 1,
The thin film deposition device includes a channel array switching unit capable of moving the position of the source delivery channel array while supporting it,
The channel array switching unit includes a motor unit; a rotating shaft connected to the motor unit; And a channel array support plate connected to the rotation axis and rotating together with the rotation axis,
The channel array support plate includes a first channel array mounting portion and a second channel array mounting portion, and the source transmission channel array includes a first source transmission channel array and a second channel array mounted on the first channel array mounting portion. It includes a second source delivery channel array mounted on the seating portion,
A thin film deposition apparatus configured to allow the first channel array seating unit or the second channel array seating unit to be placed between the gas injection head and the substrate by rotating the rotation axis. According to claim 4,
The channel array support plate is disposed within the deposition chamber,
The deposition chamber includes a main chamber portion and an auxiliary chamber portion extending therefrom,
The gas injection head and the susceptor are disposed in the main chamber portion,
One of the first and second channel array seating portions of the channel array support plate is disposed in the main chamber portion, and the other one of the first and second channel array seating portions is disposed in the auxiliary chamber portion,
A thin film deposition device equipped with an opening and closing part in the auxiliary chamber part that can be opened and closed for channel array replacement. According to claim 4,
A thin film deposition apparatus configured to adjust a gap between the channel array support plate and the gas injection head or a gap between the source delivery channel array disposed on the channel array support plate and the gas injection head. According to claim 1,
A thin film deposition apparatus configured to adjust the height of the susceptor with respect to the gas injection head. According to claim 1,
A thin film deposition apparatus configured to control the temperature of the gaseous source material and the substrate such that the gaseous source material does not condense in the vapor phase before reaching the surface of the substrate and condenses upon reaching the surface of the substrate. delete delete According to claim 1,
A thin film deposition device in which the temperature of the susceptor is controlled in the range of 10 ℃ to 90 ℃. delete According to claim 1,
The source transfer channel array is a thin film deposition device configured to form an organic light-emitting layer pattern corresponding to a pixel area of an organic light-emitting device (OLED). According to claim 13,
the source delivery channel array includes a first source delivery channel array, a second source delivery channel array, and a third source delivery channel array;
the first source delivery channel array has a first aperture pattern corresponding to a first pixel region of the organic light emitting device (OLED),
the second source transfer channel array has a second aperture pattern corresponding to a second pixel region of the organic light emitting device (OLED),
The third source transfer channel array has a third opening pattern corresponding to a third pixel area of the organic light emitting device (OLED). A thin film deposition apparatus for forming a patterned thin film,
The patterned thin film is an organic thin film, the thin film deposition device is an organic thin film deposition device, and the thin film deposition device is,
A source container containing a source material, which evaporates the source material to generate a vapor source material;
a gas injection head for supplying the gaseous source material delivered from the source container to a given area for thin film formation;
A susceptor disposed opposite the gas injection head and supporting the substrate mounted on the upper or lower surface of the gas injection head;
a source delivery channel array disposed between the gas injection head and the substrate mounted on the susceptor, the source delivery channel array having an opening pattern for defining a pattern of a thin film formed on the substrate; and
Comprising a temperature reduction means for lowering the temperature of the gaseous source material generated from the source container and transferred to the substrate through the gas injection head,
The gaseous source material is transported to the gas injection head by a carrier gas,
The temperature reduction means includes a cooling gas supply unit for supplying a cooling gas separate from the carrier gas within the gas injection head, and the cooling gas is mixed with the gaseous source material,
The cooling gas supply unit includes a first cooling gas supply pipe for supplying a first cooling gas into the gas injection head and a second cooling gas supply pipe for supplying a second cooling gas into the gas injection head,
The first cooling gas primarily lowers the temperature of the gaseous source material, the second cooling gas secondarily lowers the temperature of the gaseous source material, and the temperature of the second cooling gas is equal to that of the first cooling gas. A thin film deposition device with a lower temperature.

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