WO2022173264A1

WO2022173264A1 - Thin film deposition apparatus for forming patterned organic thin film

Info

Publication number: WO2022173264A1
Application number: PCT/KR2022/002175
Authority: WO
Inventors: 이용의; 이명기; 구본용; 김언정
Original assignee: 주식회사 유니텍스
Priority date: 2021-02-15
Filing date: 2022-02-15
Publication date: 2022-08-18
Also published as: KR102616039B1; KR20220117390A

Abstract

Disclosed is a thin film deposition apparatus for forming a patterned thin film. The disclosed thin film deposition apparatus for forming a patterned thin film may comprise: a source container for containing a source material and producing a gaseous source material by evaporating the source material; a gas injection head for supplying the gaseous source material, which has been transferred from the source container, to a given area for forming a thin film; a susceptor disposed opposite the gas injection head and supporting a substrate mounted on the upper surface thereof; a source transfer channel array disposed between the gas injection head and the substrate mounted on the susceptor, and having an opening pattern for defining a thin film pattern formed on the substrate; and a temperature reducing means for reducing the temperature of the gaseous source material produced from the source container and transferred to the substrate by means of the gas injection head.

Description

Thin film deposition apparatus for forming a patterned organic thin film

The present invention relates to an apparatus for forming a thin film and its application, and more particularly, to a thin film deposition apparatus for forming a patterned organic thin film and a thin film deposition method using the same.

When various electronic devices including semiconductor devices are manufactured, various thin films made of semiconductors, insulators, or conductors such as metals are formed on a substrate. Various methods such as physical vapor deposition (PVD), chemical vapor deposition (CVD), and atomic layer deposition (ALD) are applied to form the thin film. In addition, various patterning techniques are used to form a patterned thin film in a shape required by the device.

Deposition means attaching a material to the surface of a substrate as a thin film using a vapor phase precursor. For example, deposition by evaporation means heating and evaporating a metal or compound in a vacuum state and coating the vapor as a thin film on the surface of an object. Among the organic light emitting device (OLED) manufacturing process, there are about four vacuum deposition methods, which are a field of pixel formation technology, and among them, the method applied to mass production uses a metal mask. vacuum deposition method.

Since organic materials for OLED are highly reactive and vulnerable to water and oxygen, the organic material deposition process should be performed in an environment blocked from water and oxygen. That is, it may not be possible to use a general photolithography process. The vacuum deposition method using the MM is a method of depositing the MM on the substrate by disposing the MM close to the substrate between the evaporation source and the substrate in a vacuum chamber, and then passing the organic material evaporated from the evaporation source through the MM. The vacuum deposition method using MM has been technically verified, and the development of materials and equipment is also showing considerable perfection.

However, since the vacuum deposition method using MM has a fundamental disadvantage in realizing a large area and high resolution, it is inherently difficult to reduce the production cost due to the use of expensive equipment. MM is made by using a metal such as INVAR with a small coefficient of thermal expansion, and can be manufactured in a form in which a very precise aperture pixel pattern of about tens of μm is formed on a thin metal film of about 15-30 μm to realize the pixel size. . However, since the conventional vacuum deposition method using MM deposits using an evaporation source (source), the substrate and the metal mask are placed above the evaporation source, and when the substrate and the mask have a thin and large area, a sagging problem occurs. The sag of the substrate and the mask increases as the size of the substrate increases, which may cause defects such as scratches or problems in which pixels are not accurately implemented. This problem may be a significant hindrance to increasing the area and resolution of the display.

In addition, when depositing a thin film using MM, the thickness of the deposited thin film is tens to hundreds of nm, which is significantly lower than the thickness of MM, so there are many limitations in the implementation of precise shapes and fine pixels due to the shadowing effect by MM. . That is, since the thickness of the OLED component thin film compared to the MM thickness is very thin, a shadowing effect occurs and it is difficult to implement a fine and precise pattern.

Therefore, it is required to develop a new thin film deposition technique and related apparatus that can overcome various problems and limitations of the existing thin film forming method using a metal mask.

The technical problem to be achieved by the present invention is to provide a patterned thin film deposition technique and thin film deposition apparatus that can overcome various problems and limitations of the vacuum deposition method using a conventional metal mask (MM) for realizing pixels of a display device. have.

In addition, the technical problem to be achieved by the present invention is to provide a thin film deposition technology and a thin film deposition apparatus capable of easily and precisely forming a patterned organic thin film without problems such as sagging of a substrate or a mask.

The problem to be solved by the present invention is not limited to the above-mentioned problems, and other problems not mentioned will be understood by those skilled in the art from the following description.

According to an embodiment of the present invention, as a thin film deposition apparatus for forming a patterned thin film, a source material is contained therein, and a source container for evaporating the source material to generate a vapor source material. ; a gas injection head for supplying the gaseous source material delivered from the source container to a given area for thin film formation; a susceptor disposed opposite the gas injection head to support a substrate seated on the upper surface thereof; a source delivery channel array disposed between the gas injection head and the substrate seated on the susceptor and having an opening pattern for defining a pattern of a thin film formed on the substrate; and a temperature reducing means for lowering the temperature of the gaseous source material generated from the source container and transferred to the substrate through the gas injection head.

A fixing member for fixing the source delivery channel array may be further provided at a lower end of the gas injection head or a region adjacent thereto, and the thin film deposition apparatus may inject the source delivery channel array into the gas using the fixing member. It may be configured to be detachably attached to the lower end of the head.

A channel array support member for supporting the source delivery channel array may be further provided, and the channel array support member may have an opening area corresponding to a main area of the source delivery channel array, and and supporting an edge region around the main region, wherein the thin film deposition apparatus includes a gap between the channel array support member and the gas injection head or the source delivery channel array disposed on the channel array support member and the The distance between the gas injection heads may be adjustable.

The thin film deposition apparatus may include a channel array switching unit capable of moving the position while supporting the source delivery channel array. The channel array conversion unit may include a motor unit, a rotation shaft connected to the motor unit, and a channel array support plate connected to the rotation shaft and rotated together with the rotation shaft.

The channel array support plate may include a first channel array bobbin part and a second channel array bobbin part, and the source transfer channel array includes a first source transfer channel array and the second channel array seated on the first channel array bobbin part. It may include a second source delivery channel array that is seated in the channel array seat. The first channel array seating part or the second channel array seating part may be disposed between the gas injection head and the substrate by the rotation of the rotation shaft.

The channel array support plate may be disposed in a deposition chamber, and the deposition chamber may include a main chamber part and an auxiliary chamber part extending therefrom, wherein the gas injection head and the susceptor are disposed in the main chamber part. Any one of the first and second channel array seating portions of the channel array support plate may be disposed in the main chamber, and the other of the first and second channel array seating portions may be in the auxiliary chamber. It may be disposed in the unit, and the auxiliary chamber unit may be provided with an opening and closing unit that can be opened and closed to replace the channel array.

The thin film deposition apparatus may be configured to adjust a distance between the channel array support plate and the gas injection head or between the source delivery channel array and the gas injection head disposed on the channel array support plate.

The height of the susceptor with respect to the gas injection head may be adjustable.

The thin film deposition apparatus may be configured to control the temperature of the source material in the vapor phase and the substrate so that the source material in the vapor phase reaches and condenses on the surface of the substrate without condensing in the vapor phase before reaching the surface of the substrate have.

The temperature reducing means may include a cooling gas supply for supplying a cooling gas into the gas injection head, and the cooling gas may be mixed with the gaseous source material.

The temperature reducing means may further include a cooling channel formed in a side wall portion of the gas injection head, and a cooling fluid may flow through the cooling channel.

The temperature of the susceptor may be adjusted in the range of 10 °C to 90 °C.

The patterned thin film may be an organic thin film, and the thin film deposition apparatus may be an organic thin film deposition apparatus.

The source transfer channel array may have a configuration for forming an organic emission layer pattern corresponding to a pixel region of an organic light emitting diode (OLED).

The source delivery channel array may include a first source delivery channel array, a second source delivery channel array, and a third source delivery channel array, wherein the first source delivery channel array is a first of the organic light emitting diode (OLED). It may have a first opening pattern corresponding to the pixel area, the second source transmission channel array may have a second opening pattern corresponding to the second pixel area of the OLED, and the third source The transfer channel array may have a third opening pattern corresponding to the third pixel area of the organic light emitting diode OLED.

According to embodiments of the present invention, it is possible to implement a thin film deposition technique and a thin film deposition apparatus capable of overcoming various problems and limitations of the conventional vacuum deposition method using a metal mask (MM). By using the thin film deposition technique and the thin film deposition apparatus according to the embodiment, a patterned thin film, for example, an organic thin film, can be easily/sophically formed without problems such as sagging of the substrate or mask.

In addition, according to embodiments of the present invention, various electronic devices can be easily manufactured using the above-described thin film deposition technology and thin film deposition apparatus. In particular, by using the above-described thin film deposition technology and thin film deposition apparatus, an organic light emitting diode (OLED) having excellent performance and high resolution can be more easily manufactured.

1 is a cross-sectional view schematically showing a thin film deposition apparatus for forming a patterned thin film according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view illustrating a case in which a substrate seated on a susceptor is brought close to a source delivery channel array in the thin film deposition apparatus of FIG. 1 .

3 is a cross-sectional view schematically showing a thin film deposition apparatus for forming a patterned thin film according to another embodiment of the present invention.

4 is a cross-sectional view schematically showing a thin film deposition apparatus for forming a patterned thin film according to another embodiment of the present invention.

5 is a cross-sectional view for explaining a thin film deposition apparatus according to another embodiment of the present invention.

6 is a cross-sectional view for explaining a thin film deposition apparatus according to another embodiment of the present invention.

10 is a plan view exemplarily showing a part of a first source transfer channel array that can be applied to a thin film deposition apparatus according to an embodiment of the present invention.

11 is a plan view exemplarily showing a part of a first source transfer channel array that can be applied to a thin film deposition apparatus according to an embodiment of the present invention.

12 is a plan view exemplarily showing a part of a third source transfer channel array that can be applied to a thin film deposition apparatus according to an embodiment of the present invention.

13A to 13G are plan views illustrating a method of manufacturing an organic light emitting diode (OLED) using a thin film deposition apparatus according to an embodiment of the present invention.

14A to 14E are cross-sectional views illustrating a method of manufacturing an organic light emitting diode (OLED) using a thin film deposition apparatus according to an embodiment of the present invention.

15 is an optical micrograph showing a patterned thin film prepared according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Examples of the present invention to be described below are provided to more clearly explain the present invention to those of ordinary skill in the art, and the scope of the present invention is not limited by the following examples, The embodiment may be modified in many different forms.

The terminology used herein is used to describe specific embodiments, not to limit the present invention. As used herein, terms in the singular form may include the plural form unless the context clearly dictates otherwise. Also, as used herein, the terms "comprise" and/or "comprising" refer and does not exclude the presence or addition of one or more other shapes, steps, numbers, actions, members, elements, and/or groups thereof. In addition, as used herein, the term “connection” not only means that certain members are directly connected, but also includes indirectly connected members with other members interposed therebetween.

In addition, when a member is said to be located "on" another member in the present specification, this includes not only a case in which a member is in contact with another member but also a case in which another member is present between the two members. As used herein, the term “and/or” includes any one and any combination of one or more of the listed items. In addition, as used herein, terms such as "about", "substantially", etc. are used in the meaning of the range or close to the numerical value or degree, in consideration of inherent manufacturing and material tolerances, and to help the understanding of the present application The exact or absolute figures provided for this purpose are used to prevent the infringer from using the mentioned disclosure unfairly.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The size or thickness of the regions or parts shown in the accompanying drawings may be slightly exaggerated for clarity and convenience of description. Like reference numerals refer to like elements throughout the detailed description.

Referring to FIG. 1 , the thin film deposition apparatus for forming a patterned thin film according to the present embodiment may include a source container 10 in which a source material is contained. The source container 10 may be configured to vaporize or evaporate the source material. Thereby, the vapor phase source material may be generated from the source container 10 .

The thin film deposition apparatus may include a gas injecting head 20 for supplying the vapor-phase source material delivered from the source container 10 to a given region for forming a thin film. The gas injection head 20 may be referred to as a 'vapor injector' or a 'vapor providing head' or a 'shower head'. The gas injection head 20 may supply the gaseous source material in a downward direction. In the case of the horizontal vapor deposition apparatus, the injection surface of the gas injection head 20 and the main surface of the substrate are arranged parallel to the vertical direction to the ground so that the gas injection head 20 can supply the source material in the gas phase in the horizontal direction. can be

The thin film deposition apparatus may include a susceptor 30 disposed opposite to the gas injection head 20 . Although the following embodiments describe a top-down deposition apparatus in which a source material is supplied in a downward direction, the same may be applied to a horizontal vapor deposition apparatus. A substrate SUB1 on which a thin film is to be deposited may be seated on the upper surface of the susceptor 30 , and the susceptor 30 may support the seated substrate SUB1 . The susceptor 30 may be referred to as a kind of substrate support or substrate holder.

The thin film deposition apparatus may include a source delivery channel array 40 disposed between the gas injection head 20 and the substrate SUB1 seated on the susceptor 30 . The source delivery channel array 40 may serve to define a pattern of a thin film formed on the substrate SUB1 . That is, the source delivery channel array 40 may have an opening pattern for defining a pattern of a thin film formed on the substrate SUB1, and through the opening pattern, the vapor-phase source material is transferred to a given region of the substrate SUB1. It can play a role in transmission. In one embodiment, when the pattern of the thin film is a pixel of a display, the aperture pattern will have an array corresponding to the array of pixels across the source delivery channel array 40 while having a size and shape corresponding to the pixel. can In one embodiment, the size of the channel may be the same as the size of the pixel. If necessary, the size of the channel may be slightly larger than the size of the pixel. For example, the size of the channel may be 2% to 30% larger than the size of the pixel. For example, the width of the channel may be greater than the width of the pixel by 2% to 30%.

The source delivery channel array 40 provides a boundary between the gaseous source material inside the gas injection head 20 and the substrate SUB1 on which the thin film is to be formed, and the channel of the source delivery channel array 40 is the gaseous source material This is the passage through As the gaseous source material passes through the channel, straightness may be improved. To this end, the size of the channel may have a greater length compared to the mean free path in the gas injection head 20 under the process pressure. As the gaseous source material passes through the channel and collides with or reflects on the channel wall, the direction of travel is corrected in the direction perpendicular to the surface of the substrate SUB1 and reaches the surface of the substrate SUB1. As a result, the shadowing effect is reduced. In the source delivery channel array 40 it is significantly reduced or not present. In one embodiment, the length of the channel of the source delivery channel array 40 may be 20 μm to 1 cm, and the thickness of the source delivery channel array 40 may be substantially the same as the length of the channel.

In this embodiment, a fixing member 25 for fixing the source delivery channel array 40 to the lower end of the gas injection head 20 or an area adjacent thereto may be further provided, and the source using the fixing member 25 is used. The delivery channel array 40 may be fixed to or released from the lower end of the gas injection head 20 . In one embodiment, the source delivery channel array 40 may be detachably attached to the lower end of the gas injection head 20 using the fixing member 25 . Accordingly, replacement and management of the source delivery channel array 40 may be easy. The fixing member 40 may be a known fixing means such as a fastening member such as a bolt, a clamp, or a magnetic support body, but the present invention is not limited thereto.

Hereinafter, a thin film deposition apparatus according to an embodiment of the present invention will be described in more detail.

The gaseous source material generated in the source container 10 may be transferred to the gas injection head 20 . In this case, the gaseous source material may be transferred to the gas injection head 20 by a predetermined carrier gas G10 . A first supply pipe P10 may be provided between the source container 10 and the gas injection head 20 , and the gaseous source material may be supplied through the first supply pipe P10 . Reference numeral A10 denotes a movement path of the source material in the vapor phase. The first supply pipe P10 may be connected to one end of the source container 10 . A carrier gas supply pipe P11 for supplying the carrier gas G10 may be provided at the other end of the source container 10 . Reference numeral A11 denotes a movement path of the carrier gas G10. The gaseous source material may be transferred to the gas injection head 20 together with the carrier gas G10. The carrier gas G10 may be an inert gas. The inert gas may be, for example, nitrogen (N ₂ ) gas or argon (Ar) gas.

The temperature of the gaseous source material in the source container 10 may be, for example, as high as about 300°C to 400°C. A 'temperature reducing means' (a cooling means or a cooling system) may be used to control the temperature of such a high-temperature source material (the gaseous source material). That is, a 'temperature reducing means' for lowering the temperature of the gaseous source material generated from the source container 10 and transferred to the substrate SUB1 through the gas injection head 20 may be used. The temperature reducing means may include, for example, a cooling gas supply unit for supplying the cooling gas CG1 into the gas injection head 20 . The cooling gas CG1 may be supplied through the second supply pipe P20 . The second supply pipe P20 may be connected to the first supply pipe P10 . Reference numeral A20 denotes a movement path of the cooling gas CG1. The cooling gas CG1 may be an inert gas. The inert gas may be, for example, nitrogen (N ₂ ) gas or argon (Ar) gas. The cooling gas CG1 supplied through the second supply pipe P20 may be mixed with the gaseous source material supplied through the first supply pipe P10 and transferred to the gas injection head 20 . The temperature of the cooling gas CG1 may be, for example, about 100°C to about 300°C. When the temperature of the source material in the gas phase is excessively or rapidly lowered in the gas phase, it may not be easy to form a thin film. can do. In this regard, the temperature of the cooling gas CG1 may be preferably about 200°C to about 300°C. This will be described in more detail later.

The gas injection head 20 , the susceptor 30 , and the source delivery channel array 40 may be disposed in the deposition chamber CH10 . The gas injection head 20 may be disposed at an inner upper end (or a region adjacent to the upper end) of the deposition chamber CH10 , and the susceptor 30 may be disposed below in a direction perpendicular to the gas injection head 20 . Also, the source delivery channel array 40 may be disposed between the gas injection head 20 and the susceptor 30 .

The susceptor 30 may serve to control the temperature of the substrate SUB1 while supporting the substrate SUB1 . During the thin film deposition process, the temperature of the susceptor 30 may be adjusted, for example, in the range of 10 °C to 90 °C. Accordingly, the substrate SUB1 is heated by the vapor phase precursor reaching the substrate SUB1 , but the temperature of the substrate SUB1 is reduced by the susceptor 30 , and the vapor phase source material at the surface of the substrate SUB1 . Formation of a thin film by condensation of This will be described in more detail later.

The susceptor 30 may be configured to be adjustable in height. That is, the height of the susceptor 30 may be adjusted with respect to the gas injection head 20 . In this regard, a predetermined support 35 may be disposed on the lower surface of the susceptor 30 , and the height of the susceptor 30 may be adjusted by vertical movement of the support 35 . A portion of the support 35 may extend to the outside of the deposition chamber CH10 .

In the actual thin film deposition process, as shown in FIG. 2 , the height of the susceptor 30 is adjusted so that the top surface of the substrate SUB1 seated on the susceptor 30 is the bottom surface of the source delivery channel array 40 . After being placed in contact with the, a thin film deposition process can be performed. An alignment process of the source delivery channel array 40 and the substrate SUB1 may be performed to form a patterned thin film.

3 is a cross-sectional view schematically showing a thin film deposition apparatus for forming a patterned thin film according to another embodiment of the present invention. The thin film deposition apparatus according to the present embodiment may have a structural difference from the thin film deposition apparatus of FIG. 1 in a structure for mounting/fixing the source delivery channel array 40 . Hereinafter, differences from the structure of FIG. 1 will be mainly described with respect to FIG. 3 .

Referring to FIG. 3 , the thin film deposition apparatus according to the present embodiment may further include a channel array support member 45 for supporting the source delivery channel array 40 . The channel array support member 45 may be installed in contact with or connected to an inner wall of the deposition chamber CH20 . The channel array support member 45 may have an opening area N1 corresponding to a main area of the source delivery channel array 40 and configured to support an edge area around the main area of the source delivery channel array 40 . can be Further, the spacing between the channel array support member 45 and the gas injection head 20 and/or the spacing between the gas injection head 20 and the source delivery channel array 40 disposed on the channel array support member 45 . may be adjustable. That is, the height of the channel array support member 45 relative to the gas injection head 20 may be adjusted, and/or the height of the source delivery channel array 40 relative to the gas injection head 20 may be adjusted. Accordingly, replacement and management of the source delivery channel array 40 may be easy. However, the structure and characteristics of the channel array support member 45 shown here are exemplary, and may be variously changed according to circumstances.

4 is a cross-sectional view schematically showing a thin film deposition apparatus for forming a patterned thin film according to another embodiment of the present invention. The thin film deposition apparatus according to the present embodiment may have a structural difference from the thin film deposition apparatus of FIGS. 1 and 2 in a structure for mounting/fixing the source

delivery channel arrays

40a and 40b. Hereinafter, differences from the structures of FIGS. 1 and 2 will be mainly described with respect to FIG. 4 .

Referring to FIG. 4 , the thin film deposition apparatus according to the present embodiment may include a channel array switching unit MC10 capable of moving the source

delivery channel arrays

40a and 40b while supporting the source

transfer channel arrays

40a and 40b. The channel array conversion unit MC10 may also be referred to as a 'channel array support and conversion unit'.

The channel array switching unit MC10 is, for example, a motor unit 46, a rotation shaft 47 connected to the motor unit 46, and a channel array support plate connected to and rotated with the rotation shaft 47 ( 48) may be included. The rotation shaft 47 may have a cylindrical structure or a shaft structure, and may be mechanically connected to a rotor of the motor unit 46 .

The channel array support plate 48 may include at least a first channel array seating part S1 and a second channel array seating part S2 . The first channel array receiving unit S1 and the second channel array receiving unit S2 may be disposed to be spaced apart from each other in the horizontal direction. The source

transfer channel arrays

40a and 40b are a first source transfer channel array 40a seated on the first channel array receiving unit S1 and a second source transfer channel array seated on the second channel array receiving unit S2. (40b) may be included. The first channel array seating part S1 may have an opening area corresponding to the main area of the first source delivery channel array 40a, and may have an edge area around the main area of the first source delivery channel array 40a. may be configured to support. Similarly, the second channel array seating part S2 may have an opening area corresponding to the main area of the second source transfer channel array 40b, and may have an opening area around the main area of the second source transfer channel array 40b. may be configured to support an edge region of

The first channel array seating part S1 or the second channel array seating part S2 may be disposed between the gas injection head 20 and the substrate SUB1 by the rotation of the rotation shaft 47 . The channel array support plate 48 may be disposed in the deposition chamber CH30 . Here, the deposition chamber CH30 may include a main chamber part CH30a and an auxiliary chamber part CH30b extending therefrom. The auxiliary chamber part CH30b may extend to one side of the main chamber part CH30a. The gas injection head 20 and the susceptor 30 may be disposed in the main chamber part CH30a. Accordingly, the gas injection head 20 and the source

delivery channel arrays

40a and 40b have a configuration separated from each other.

Any one of the first and second channel array seating parts S1 and S2 of the channel array support plate 48 may be disposed in the main chamber part CH30a, and the first and second channel array seating parts S1 and S2 may be disposed in the main chamber part CH30a. The other one of S2) may be disposed in the auxiliary chamber unit CH30b. Accordingly, any one of the first and second source

delivery channel arrays

40a and 40b may be disposed in the main chamber unit CH30a, and the other of the first and second source

delivery channel arrays

40a and 40b may be It may be disposed in the auxiliary chamber unit CH30b. Also, an opening/closing part D1 that can be opened and closed for replacing the channel array may be provided in the auxiliary chamber part CH30b. By opening the opening/closing part D1, it is possible to easily perform replacement of the channel array. The opening/closing part D1 may be referred to as a kind of 'channel array change port (mask change port)'. Meanwhile, the motor unit 46 may be disposed above one end of the main chamber unit CH30a or in an area adjacent thereto, and the rotation shaft 47 is disposed in the main chamber unit CH30a below the motor unit 46 . can be

The spacing between the channel array support plate 48 and the gas injection head 20 and/or the spacing between the gas injection head 20 and the source

delivery channel array

40a or 40b disposed on the channel array support plate 48 . may be adjustable. The height of the channel array support plate 48 relative to the gas injection head 20 may be adjusted, and/or the height of the source

delivery channel array

40a or 40b relative to the gas injection head 20 may be adjusted.

The structure and characteristics of the channel array switching unit MC10 shown here are exemplary, and may be variously changed depending on the case. For example, here, the channel array support plate 48 has first and second channel array mounting portions S1 and S2, and first and second source

transfer channel arrays

40a and 40b are respectively provided thereon. Although the illustrated and described case is illustrated and described, in another embodiment, three or more channel array seating units may be provided, and different source delivery channel arrays may be provided on the three or more channel array seating units.

In addition, although not shown in FIGS. 1 to 4 , a predetermined exhaust port may be provided at the lower end of the deposition chambers CH10 , CH20 , and CH30 or in a region adjacent to the lower end.

The thin film deposition apparatus according to the above-described embodiments may be an apparatus for depositing a patterned organic thin film. Accordingly, the above-mentioned source material may be an organic material or may include an organic material as a main component. The above-described gaseous source material may also be an organic material or may include an organic material as a main component. The patterned thin film formed on the substrate SUB1 may be an organic thin film. The patterned thin film formed by using the thin film deposition apparatus according to the embodiment may be, for example, a light emitting layer pattern of an organic light emitting device (OLED). In this case, the source transfer channel array (40 in FIGS. 1 and 3 , 40a in FIG. 4 or 40b in FIG. 4 ) has a configuration for forming an organic light emitting layer pattern corresponding to the pixel area of the organic light emitting diode (OLED). can For example, the source delivery channel array (40 in FIGS. 1 and 3 , 40a in FIG. 4 or 40b in FIG. 4 ) may have a red (R) organic light emitting layer pattern, a green (G) organic light emitting layer pattern, and a blue (B) organic light emitting layer pattern. It may have a configuration for forming any one of the emission layer patterns.

A method of forming a patterned thin film using the thin film deposition apparatus according to an embodiment of the present invention may be completely different from a vacuum deposition method using a conventional metal mask. In the conventional vacuum deposition method using a metal mask, deposition is performed in a state in which a metal mask and a substrate are disposed above an evaporation source (source). In the vacuum deposition method using the conventional metal mask, when the substrate and the metal mask are thin and have a large area, a sagging problem occurs. The sag of the substrate and the metal mask increases as the size of the substrate increases, which may cause problems such as scratches or inaccurate pixel implementation. This problem can be a significant hindrance to improving (increasing) the area and resolution of the display.

However, when the thin film deposition apparatus according to the embodiment of the present invention is used, the source

delivery channel arrays

40 , 40a , 40b and the substrate SUB1 are disposed under the gas injection head 20 and are generated by evaporation. Since the thin film can be deposited by the source material in the vapor phase, the problem of sagging of the source

delivery channel arrays

40 , 40a , 40b and the substrate SUB1 can be fundamentally prevented. When the thin film deposition apparatus according to the embodiment is used, a patterned thin film, for example, an organic thin film, can be easily/sophically formed without problems such as sagging of the source

delivery channel arrays

40 , 40a , 40b and the substrate SUB1 . can be formed Such a thin film deposition apparatus may be easily applied to the manufacture of various electronic devices, and in particular, may be advantageously applied to the manufacture of an organic light emitting device (OLED) having excellent performance and high resolution/large area.

In addition, when the thin film deposition apparatus according to the embodiment of the present invention is used, the gaseous source material introduced from the gas injection head 20 is transferred onto the substrate SUB1 through the channels of the source

delivery channel arrays

40 , 40a and 40b . Because it is transferred to the channel, the thin film deposition can be made in a state in which the straightness of the source material in the vapor phase is secured by the channels. Accordingly, according to an embodiment of the present invention, a shadowing effect as in the conventional metal mask MM may not occur, and the implementation of a fine pattern may be facilitated. With respect to the arrangement relationship of the gas injection head 20, the source

delivery channel arrays

40, 40a, 40b, and the substrate SUB1 and the configuration/structure of the source

delivery channel arrays

40, 40a, 40b, the gaseous source The straightness of the material may be easily secured, and a thin film having a fine pattern may be deposited without a shadowing problem.

In the thin film deposition apparatus according to the embodiment of the present invention, the susceptor 30 on which the substrate SUB1 is placed may be maintained at, for example, a temperature of about 50° C. or less. The temperature of the gaseous source material evaporated from the source container 10 and supplied to the gas injection head 20 may be, for example, as high as about 300°C to 400°C. Since the temperature of the substrate SUB1 may be considerably low when the vapor phase source material is evaporated and reaches the gas injection head 20, the temperature of the substrate SUB1 may be significantly lower than that of the gas injection head 20. A temperature drop may be experienced while reaching the substrate SUB1 from the . As a result, thin film deposition may be performed on the surface portion of the substrate SUB1 by condensation of the source material in the vapor phase. However, if the temperature of the gaseous source material is lowered to below the critical temperature before reaching the surface of the substrate SUB1, the gaseous source material is condensed in advance before reaching the substrate SUB1 to properly form a thin film. may not be done In this regard, when the vapor-phase source material reaches the surface of the substrate SUB1, the temperature of the vapor-phase source material may preferably be in the range of about 180°C to about 250°C. Such temperature conditions may vary depending on the type of the source material or other process conditions.

The gaseous source material and the temperature of the substrate SUB1 so that the vapor phase source material reaches the surface of the substrate SUB1 without being condensed in the vapor phase before reaching the surface of the substrate SUB1 to achieve a thin film according to the condensation It may be desirable to control When the vapor-phase source material reaches the surface of the substrate SUB1, if the temperature is too high or too low, the thin film may not be properly formed. When the temperature of the vapor phase source material reaches the surface of the substrate SUB1 is excessively high, the thin film may not be properly formed due to a sudden temperature drop on the surface of the substrate SUB1 . In addition, when the temperature of the gaseous source material is lowered below the critical temperature before reaching the surface of the substrate SUB1, the gaseous source material is pre-condensed in the vapor phase before reaching the substrate SUB1 (that is, , nucleation occurs), and thin film formation may not be performed properly. Therefore, the vapor-phase source material and the substrate may reach the surface of the substrate SUB1 without being condensed in the vapor phase before reaching the surface of the substrate SUB1 so that the thin film according to the condensation is smoothly performed. It may be desirable to control the temperature of (SUB1). In this regard, a 'temperature reducing means' for lowering the temperature of the gaseous source material generated from the source container 10 and transferred to the substrate SUB1 through the gas injection head 20 may be used. Hereinafter, a specific example of the temperature reducing means and the configuration of the gas injection head will be described in more detail with reference to FIGS. 5 and 6 .

Referring to FIG. 5 , there is shown a gas injection head 20A applicable to the thin film deposition apparatus according to the present embodiment. A first supply pipe P10 may be connected to an upper end of the gas injection head 20A, and a gaseous source material SG1 may be supplied through the first supply pipe P10. The temperature of the gaseous source material SG1 generated in the source container (eg, 10 in FIG. 1 ) may be, for example, as high as about 300°C to 400°C.

A second supply pipe P20 for injecting the cooling gas CG1 into the first supply pipe P10 may be connected. The cooling gas CG1 supplied through the second supply pipe P20 may be mixed with the gaseous source material SG1 supplied through the first supply pipe P10 and transferred to the gas injection head 20A. The temperature of the cooling gas CG1 may be, for example, about 100°C to 300°C. The cooling gas CG1 may serve to appropriately lower the temperature of the gaseous source material SG1 . The cooling gas CG1 may be an inert gas.

The gas injection head 20A may include a diaphragm DP10 in which a plurality of holes h10 are formed at positions spaced apart from each other by a predetermined distance on an upper surface thereof. The diaphragm DP10 may be disposed to cross the inside of the gas injection head 20A. A plurality of holes h10 may be regularly or uniformly dispersed in the diaphragm DP10. A mixed gas of the gaseous source material SG1 and the cooling gas CG1 may be dispersed and flowed thereunder through the plurality of holes h10 . The diaphragm DP10 is exemplary, and may be applied to the gas injection heads of FIGS. 1 to 3 , or may be replaced or omitted by other suitable gas mixing systems.

A cooling channel CC10 may be formed in the sidewall W10 of the gas injection head 20A. By flowing (circulating) a cooling fluid (not shown) through the cooling channel CC10, a cooling process for the gaseous source material SG1 may be additionally performed. Accordingly, the temperature of the gaseous source material SG1 may be gradually (or stepwise) lowered by the cooling gas CG1 and the cooling fluid.

The configuration for supplying the cooling gas CG1 in FIG. 5 and the cooling channel CC10 provided in the sidewall W10 of the gas injection head 20A may each be an example of the above-described 'temperature reducing means'. In some cases, the cooling channel CC10 may not be used.

In this embodiment, the source delivery channel array 40 may be fixed to the lower end of the gas injection head 20A or an area adjacent thereto. A fixing member ( 25 in FIG. 1 ) for fixing the source delivery channel array 40 may be further provided. The source delivery channel array 40 may be fixed to or released from the lower end of the gas injection head 20 . In one embodiment, the source delivery channel array 40 may be detachably attached to the lower end of the gas injection head 20A using the fixing member 25 . Accordingly, replacement and management of the source delivery channel array 40 may be easy. When forming the thin film, the susceptor 30 may move upward, or the singer injection head 20A may move downward, as indicated by an arrow K so that the source delivery channel array 40 is in contact with the upper surface of the substrate SUB1. have.

Although FIG. 5 illustrates and describes a case in which the cooling gas CG1 is supplied through one supply pipe P20, according to another embodiment, a plurality of cooling gases may be supplied through a plurality of supply pipes. An example thereof is shown in FIG. 6 .

Referring to FIG. 6 , the first cooling gas CG1 may be supplied to the first supply pipe P10 through the 2-1 supply pipe P21 , and separately therefrom, the second cooling gas CG2 is the second cooling gas CG2 . - 2 may be supplied to the first supply pipe (P10) through the supply pipe (P22). The 2-1 th supply pipe P21 and the 2-2 th supply pipe P22 may be disposed to be spaced apart from each other.

After the first cooling gas CG1 is used to first lower the temperature of the gaseous source material SG1, the second cooling gas CG2 can be used to secondarily lower the temperature of the gaseous source material SG1 . Accordingly, a gradual/stepwise temperature reduction of the gaseous source material SG1 may be possible. The temperature of the first cooling gas CG1 may be, for example, about 220°C to 300°C. The temperature of the second cooling gas CG2 may be lower than the temperature of the first cooling gas CG1 . The temperature of the second cooling gas CG2 may be, for example, about 200° C. to about 250° C. However, the temperature conditions of the first and second cooling gases CG1 and CG2 are merely exemplary and may be changed in some cases. It is also possible to supply a plurality of cooling gases through three or more supply pipes. Also, in the embodiment of FIG. 6 , the cooling channel CC10 may not be used.

In this embodiment, as described with reference to FIG. 5 , the source delivery channel array 40 may be fixed to the lower end of the gas injection head 20B or an area adjacent thereto, and the source delivery channel array 40 may be fixed. A fixing member (refer to 25 in FIG. 1 ) may be further provided for doing so, and the source delivery channel array 40 can be fixed to or released from the lower end of the gas injection head 20B using the fixing member 25 . have. If necessary, the source delivery channel array 40 may be replaced with a source delivery channel array having a different pattern for each thin film forming process for pixel realization using an appropriate rotor system. Also, although not shown, a gas mixing member such as the diaphragm DP10 may be further provided inside the gas injection head 20B as described with reference to FIG. 6 .

According to another embodiment of the present invention, the temperature reducing means may further include a cooling means for cooling the source delivery channel array (40, 40a, 40b). For example, by forming a cooling line (cooling channel) at the edge of the source

delivery channel arrays

40, 40a, 40b and circulating a cooling gas or coolant through the cooling line, the source delivery channel array ( 40, 40a, 40b) can be appropriately controlled (reduced). A case in which a cooling means for cooling the source

delivery channel arrays

40, 40a, and 40b is further added to the thin film deposition apparatus according to the embodiments of FIGS. 1, 3 and 4 is shown in FIGS. 7, 8 and 9, respectively. is shown.

Referring to FIG. 7 , a cooling means for cooling the source delivery channel array 40 may be further added to the thin film deposition apparatus according to the embodiment of FIG. 1 . The cooling means may, for example, be configured to supply the cooling gas CG2 to the cooling channels formed in the source delivery channel array 40 . In FIG. 7 , reference numeral P30 denotes a connection pipe for supplying the cooling gas CG2 to the source delivery channel array 40 .

Referring to FIG. 8 , a cooling means for cooling the source delivery channel array 40 may be further added to the thin film deposition apparatus according to the embodiment of FIG. 3 . The cooling means may, for example, be configured to supply the cooling gas CG2 ′ to the cooling channels formed in the source delivery channel array 40 . In FIG. 8 , reference numeral P30 ′ denotes a connector for supplying the cooling gas CG2 ′ to the source delivery channel array 40 .

Referring to FIG. 9 , a plurality of cooling means for cooling each of the plurality of source

delivery channel arrays

40a and 40b may be further added to the thin film deposition apparatus according to the embodiment of FIG. 4 . The plurality of cooling means supplies, for example, the 2-1 cooling gas CG21 to the cooling channels formed in the first source delivery channel array 40a, and also to the second source delivery channel array 40b. It may be configured to supply the second-second cooling gas CG22 to the formed cooling channel. In FIG. 9 , reference numeral P31 denotes a first connector for supplying the 2-1 cooling gas CG21 to the first source delivery channel array 40a, and reference numeral P32 denotes a second source delivery channel array 40b. 2-2 represents a second connector for supplying the cooling gas CG21 to the . Three or more source delivery channel arrays may be provided, and cooling means may be provided for cooling each source delivery channel array. In this case, each of the plurality of source delivery channel arrays can be easily controlled individually to different temperatures. Since the appropriate temperature may be different when forming different pixel portions (eg, R/G/B light emitting layers) of the organic light emitting device (OLED), the individual temperature control as described above is required in the manufacturing of the organic light emitting device (OLED). can be usefully applied.

10 is a plan view exemplarily showing a part of a first source delivery channel array M10 that can be applied to a thin film deposition apparatus according to an embodiment of the present invention. The first source transfer channel array M10 may have a plurality of first opening regions H10 . Similarly, FIG. 11 is a plan view exemplarily showing a part of the first source delivery channel array M10 that can be applied to the thin film deposition apparatus according to an embodiment of the present invention. The second source transfer channel array M20 may have a plurality of second opening regions H20 . 12 is a plan view exemplarily showing a part of a third source transfer channel array M30 that can be applied to a thin film deposition apparatus according to an embodiment of the present invention. The third source transfer channel array M30 may have a plurality of third opening regions H30.

The first source delivery channel array M10 of FIG. 10 may include any one of a red (R) organic emission layer pattern, a green (G) organic emission layer pattern, and a blue (B) organic emission layer pattern of the organic light emitting diode OLED, for example, a red (R) may have a configuration for forming an organic light emitting layer pattern. The second source transmission channel array M20 of FIG. 11 is the other one of a red (R) organic emission layer pattern, a green (G) organic emission layer pattern, and a blue (B) organic emission layer pattern of the organic light emitting diode OLED, for example, green (G) may have a configuration for forming an organic light emitting layer pattern. Similarly, the third source delivery channel array M30 of FIG. 12 is another one of a red (R) organic light emitting layer pattern, a green (G) organic light emitting layer pattern, and a blue (B) organic light emitting layer pattern of the organic light emitting diode (OLED), For example, it may have a configuration for forming a blue (B) organic emission layer pattern. Also, in some cases, a predetermined open mask member may be applied as the source transfer channel array to the thin film deposition apparatus according to the embodiment of the present invention.

Referring to FIG. 13A , a predetermined substrate unit 100 may be provided. The substrate unit 100 may include a substrate for forming an organic light emitting diode (OLED) and a predetermined lower structure provided on an upper surface of the substrate.

13B and 13C , a first source delivery channel array having a plurality of first opening regions H10 (ie, first opening patterns) corresponding to the plurality of first pixel regions on the substrate part 100 . After disposing M10 , a patterned first organic material layer 310 may be formed in the plurality of first opening regions H10 defined by the first source transfer channel array M10 . That is, the patterned first organic material layer 310 may be formed in the plurality of first opening regions H10 corresponding to the plurality of first pixel regions. Then, the first source transfer channel array M10 may be removed from the substrate 100 . The result may be as shown in FIG. 13C.

The patterned first organic material layer 310 may be a first organic light emitting layer. The first organic emission layer may be any one of a red (R) emission layer, a green (G) emission layer, and a blue (B) emission layer of the organic light emitting diode (OLED). For example, the first organic emission layer may be a red emission layer. In this case, as the material of the first organic light emitting layer, all organic materials used in the red light emitting layer of a general organic light emitting diode (OLED) may be applied.

13D and 13E , a second source delivery channel array having a plurality of second opening regions H20 (ie, second opening patterns) corresponding to the plurality of second pixel regions on the substrate part 100 . After disposing M20 , a patterned second organic material layer 320 may be formed in the plurality of second opening regions H20 defined by the second source transfer channel array M20 . That is, the patterned second organic material layer 320 may be formed in the plurality of second opening regions H20 corresponding to the plurality of second pixel regions. Then, the second source transfer channel array M20 may be removed from the substrate unit 100 . The result may be as shown in FIG. 13E.

The patterned second organic material layer 320 may be a second organic light emitting layer. The second organic emission layer may be any one of a red (R) emission layer, a green (G) emission layer, and a blue (B) emission layer of the organic light emitting diode (OLED). For example, the second organic emission layer may be a green emission layer. In this case, as the material of the second organic light emitting layer, all organic materials used in the green light emitting layer of a general organic light emitting diode (OLED) may be applied.

As shown in FIG. 13E , a patterned second organic material layer 320 may be formed on the substrate part 100 . The patterned second organic material layer 320 may be disposed adjacent to the patterned first organic material layer 310 .

13F and 13G , a third source delivery channel array having a plurality of third opening regions H30 (ie, third opening patterns) corresponding to the plurality of third pixel regions on the substrate part 100 . After disposing M30 , a patterned third organic material layer 330 may be formed in the plurality of third opening regions H30 defined by the third source transfer channel array M30 . That is, the patterned third organic material layer 330 may be formed in the plurality of third opening regions H30 corresponding to the plurality of third pixel regions. Then, the third source transfer channel array M30 may be removed from the substrate unit 100 . The result may be as shown in FIG. 13G.

The patterned third organic material layer 330 may be a third organic light emitting layer. The third organic emission layer may be any one of a red (R) emission layer, a green (G) emission layer, and a blue (B) emission layer of the organic light emitting diode (OLED). For example, the third organic light emitting layer may be a blue light emitting layer. In this case, as the material of the third organic light emitting layer, all organic materials used in the blue light emitting layer of a general organic light emitting diode (OLED) may be applied.

As shown in FIG. 13G , a patterned third organic material layer 330 may be formed on the substrate 100 . The patterned third organic material layer 320 may be disposed adjacent to the patterned first organic material layer 310 and the patterned second organic material layer 320 . It can be said that the first to third organic material layers 310 , 320 , and 330 constitute one 'light emitting layer'. Thereafter, although not shown, an upper structure including a predetermined organic layer and an electrode may be further formed on the first to third organic material layers 310 , 320 , and 330 .

According to an embodiment of the present invention, the first to third organic material layers 310 , 320 , and 330 are formed by using the thin film deposition apparatus described with reference to FIGS. 1 to 6 rather than the conventional vacuum deposition method using a metal mask. can be formed Accordingly, various problems and limitations of the conventional vacuum deposition method using a metal mask can be overcome, and an organic light emitting diode (OLED) having excellent performance and high resolution can be easily manufactured.

Referring to FIG. 14A , the first electrode member 111 may be formed on a predetermined substrate 101 . The substrate 101 may be a transparent substrate such as a glass substrate. In addition to glass, other materials such as a transparent polymer may be applied as the material of the substrate 101 . The first electrode member 111 may comprise a plurality of first electrode elements 11 . The plurality of first electrode elements 11 may be arranged side by side, for example extending in the first direction. The plurality of first electrode elements 11 may be arranged to respectively correspond to the plurality of pixel regions P1 , P2 , P3 .

Next, the hole injection layer 121 and the hole transport layer 131 may be sequentially formed on the first electrode member 111 . The hole injection layer 121 and the hole transport layer 131 may be entirely formed to cover the plurality of pixel areas P1 , P2 , and P3 .

Although not shown, in some cases, the space between the plurality of first electrode elements 11 may be filled with an insulating material. Alternatively, a portion of the hole injection layer 121 may be provided to fill the space between the plurality of first electrode elements 11 .

The first pixel area P1 may be a red pixel area, the second pixel area P2 may be a green pixel area, and the third pixel area P3 may be a blue pixel area. The following description is based on a case in which the first pixel area P1 is a red pixel area, the second pixel area P2 is a green pixel area, and the third pixel area P3 is a blue pixel area. However, colors represented by the first to third pixel areas P1 , P2 , and P3 may be different.

Referring to FIG. 14B , a first organic emission layer 311 disposed to correspond to the first pixel region P1 may be formed on the hole transport layer 131 . The method of forming the first organic emission layer 311 may be the same as or similar to the method of forming the first organic material layer 310 described with reference to FIGS. 13B and 13C . The first organic emission layer 311 may correspond to the first organic material layer 310 of FIG. 13C .

Referring to FIG. 14C , a second organic emission layer 321 disposed to correspond to the second pixel region P2 may be formed on the hole transport layer 131 . The method of forming the second organic emission layer 321 may be the same as or similar to the method of forming the second organic material layer 320 described with reference to FIGS. 13D to 13E . The second organic emission layer 321 may correspond to the second organic material layer 320 of FIG. 13E .

Referring to FIG. 14D , a third organic emission layer 331 disposed to correspond to the third pixel region P3 may be formed on the hole transport layer 131 . A method of forming the third organic light emitting layer 331 may be the same as or similar to the method of forming the third organic material layer 330 described with reference to FIGS. 13F to 13G . The third organic emission layer 331 may correspond to the third organic material layer 330 of FIG. 13G . The first to third organic emission layers 311 , 321 , and 331 may be collectively referred to as one emission layer 301 .

Referring to FIG. 14E , an electron transport layer 411 and an electron injection layer 421 may be sequentially formed on the emission layer 301 . The electron transport layer 411 and the electron injection layer 421 may be entirely formed to cover the plurality of pixel areas P1 , P2 , and P3 .

Next, the second electrode member 431 may be formed on the electron injection layer 421 . The second electrode member 431 may include a plurality of second electrode elements 21 . Herein, for convenience, although the plurality of second electrode elements 21 are illustrated in a form extending in the same direction as the plurality of first electrode elements 11 , the plurality of second electrode elements 21 are the plurality of first electrode elements It may have a structure extending in a direction different from that of (11), that is, in the second direction. The plurality of second electrode elements 21 may extend in a direction perpendicular to the plurality of first electrode elements 11 .

The method of manufacturing the organic light emitting diode (OLED) described with reference to FIGS. 13A to 13G and 14A to 14E is merely exemplary, and may be variously modified in some cases.

15 is an optical micrograph showing a patterned thin film prepared according to an embodiment of the present invention. The temperature of the substrate during deposition was 20° C., and deposition was performed for about 10 minutes. The size of the open pattern of the metal mask is 1×2 mm, and the distance between pixels is 2 mm. It can be seen that the pixelated organic light emitting thin film is formed through the bottom gas supply method.

According to the embodiments of the present invention described above, it is possible to implement a thin film deposition technique and a thin film deposition apparatus that can overcome various problems and limitations of the conventional vacuum deposition method using a metal mask. By using the thin film deposition technique and the thin film deposition apparatus according to the embodiment, a patterned thin film (eg, an organic thin film) can be easily/sophically formed without problems such as sagging of the substrate or mask. In addition, by using the thin film deposition apparatus according to the embodiment of the present invention, since the straightness of the source material in the vapor phase transferred from the gas injection head to the substrate through the source delivery channel array can be secured, in the existing metal mask (MM) A shadowing problem may not occur, and the implementation of a fine pattern may be facilitated. In addition, according to embodiments of the present invention, various electronic devices can be easily manufactured using the above-described thin film deposition technology and thin film deposition apparatus. In particular, by using the above-described thin film deposition technology and thin film deposition apparatus, an organic light emitting diode (OLED) having excellent performance and high resolution can be more easily manufactured.

In the present specification, preferred embodiments of the present invention have been disclosed, and although specific terms are used, these are only used in a general sense to easily describe the technical content of the present invention and help the understanding of the present invention, and to limit the scope of the present invention. It is not meant to be limiting. It will be apparent to those of ordinary skill in the art to which the present invention pertains that other modifications based on the technical spirit of the present invention can be implemented in addition to the embodiments disclosed herein. For those of ordinary skill in the art, the thin film deposition apparatus and the device manufacturing method using the same according to the embodiment described with reference to FIGS. 1 to 15 may be variously provided without departing from the technical spirit of the present invention. It will be appreciated that substitutions, modifications and variations are possible. Therefore, the scope of the invention should not be determined by the described embodiments, but should be determined by the technical idea described in the claims.

Claims

A thin film deposition apparatus for forming a patterned thin film, comprising:

a source container in which a source material is contained, and which evaporates the source material to generate a vapor source material;

a gas injection head for supplying the gaseous source material delivered from the source container to a given area for thin film formation;

a susceptor disposed opposite to the gas injection head and configured to support a substrate seated on an upper or lower surface thereof;

a source delivery channel array disposed between the gas injection head and the substrate seated on the susceptor and having an opening pattern for defining a pattern of a thin film formed on the substrate; and

and a temperature reducing means for lowering the temperature of the gaseous source material generated from the source container and transferred to the substrate through the gas injection head.
The method of claim 1,

A fixing member for fixing the source delivery channel array to a lower end of the gas injection head or an area adjacent thereto is further provided;

A thin film deposition apparatus configured to detachably attach the source delivery channel array to a lower end of the gas injection head using the fixing member.
The method of claim 1,

A channel array support member for supporting the source delivery channel array is further provided,

the channel array support member has an opening area corresponding to a main area of the source delivery channel array and is configured to support an edge area around the main area of the source delivery channel array;

A thin film deposition apparatus configured to adjust a distance between the channel array support member and the gas injection head or a distance between the source delivery channel array disposed on the channel array support member and the gas injection head.
The method of claim 1,

The thin film deposition apparatus includes a channel array switching unit capable of moving the position while supporting the source delivery channel array,

The channel array conversion unit includes a motor; a rotation shaft connected to the motor unit; and a channel array support plate connected to the rotation shaft and rotated together with the rotation shaft,

The channel array support plate includes a first channel array seat part and a second channel array seat part, and the source transfer channel array includes a first source transfer channel array and the second channel array seated on the first channel array seat part. a second source delivery channel array seated in the seat;

A thin film deposition apparatus configured to allow the first channel array seating part or the second channel array seating part to be disposed between the gas injection head and the substrate by rotation of the rotation shaft.
5. The method of claim 4,

The channel array support plate is disposed in the deposition chamber,

The deposition chamber includes a main chamber part and an auxiliary chamber part extending therefrom,

The gas injection head and the susceptor are disposed in the main chamber part,

Any one of the first and second channel array mounting parts of the channel array support plate is disposed in the main chamber part, and the other of the first and second channel array mounting parts is disposed in the auxiliary chamber part,

A thin film deposition apparatus having an opening and closing part that can be opened and closed for replacing the channel array in the auxiliary chamber part.
5. The method of claim 4,

A thin film deposition apparatus configured to adjust a distance between the channel array support plate and the gas injection head or a distance between the source delivery channel array and the gas injection head disposed on the channel array support plate.
The method of claim 1,

A thin film deposition apparatus configured to enable height adjustment of the susceptor with respect to the gas injection head.
The method of claim 1,

and control the temperature of the source material in the vapor phase and the substrate so that the source material in the vapor phase does not condense in the vapor phase before reaching the surface of the substrate and is condensed upon reaching the surface of the substrate.
The method of claim 1,

The temperature reducing means includes a cooling gas supply unit for supplying a cooling gas into the gas injection head, wherein the cooling gas is mixed with the gaseous source material.
10. The method of claim 9,

The temperature reducing means further includes a cooling channel formed in a sidewall of the gas injection head, and a cooling fluid flows through the cooling channel.
The method of claim 1,

The temperature of the susceptor is a thin film deposition apparatus that is controlled in the range of 10 ℃ ~ 90 ℃.
The method of claim 1,

The patterned thin film is an organic thin film, and the thin film deposition apparatus is an organic thin film deposition apparatus.
13. The method of claim 12,

and the source transmission channel array is configured to form an organic light emitting layer pattern corresponding to a pixel region of an organic light emitting diode (OLED).
14. The method of claim 13,

wherein the source delivery channel array comprises a first source delivery channel array, a second source delivery channel array and a third source delivery channel array;

the first source transmission channel array has a first opening pattern corresponding to a first pixel area of the organic light emitting diode (OLED);

the second source transmission channel array has a second opening pattern corresponding to a second pixel area of the organic light emitting diode (OLED);

The third source transmission channel array has a third opening pattern corresponding to a third pixel region of the organic light emitting diode (OLED).