JP5570939B2 - Thin film forming apparatus and thin film forming method - Google Patents

Description

  The present invention relates to a thin film forming apparatus and a thin film forming method.

  Conventionally, a vacuum evaporation method has been performed when a thin film of organic or inorganic molecules having a predetermined shape is formed on a substrate. FIG. 5 shows an internal configuration diagram of an example of a conventional thin film forming apparatus 100 used in the vacuum deposition method.

  In the vacuum deposition method, a mask 121 having an opening of a predetermined shape is bonded to the substrate 122 in the vacuum chamber 111 evacuated by the vacuum evacuation device 112, and the evaporation source 141 disposed at a position away from the substrate 122 is used. The thin film material 145 is heated to release the material gas, the released material gas is made to reach the surface of the substrate 122 exposed from the opening of the mask 121, and a thin film having the same shape as the opening is formed on the surface of the substrate 122. Reference numeral 142 denotes a heating device for heating the thin film material 145.

  However, this vacuum deposition method has a problem that when the mask 121 receives heat from the evaporation source 141 and expands, the shape of the opening of the mask 121 is deformed and the shape of the thin film formed on the substrate 122 is deformed. . Therefore, although it is necessary to cool the mask 121 during film formation, the mask 121 also becomes larger with the recent increase in size of the substrate, and even if the peripheral portion of the mask 121 is cooled by the cooling device 124, the mask 121. There has been a problem that the central part of the battery cannot be cooled effectively. That is, it is difficult to form a thin film with a fine shape on a large-area substrate.

Further, since the mask 121 and the substrate 122 are bonded together, it takes time to align the mask 121 and the substrate 122, and the production efficiency is poor.
Further, the material gas released from the evaporation source 141 diffuses into the vacuum chamber 111, and when the opening of the mask 121 is fine, the filling rate of the material gas that passes through the opening and adheres to the substrate 122 is poor.

  At the same time as the film is formed on the substrate 122, the material gas adheres to the shielding portion outside the opening of the mask 121. When the thin film deposited on the shielding portion of the mask 121 becomes thick, there is a problem that the thin film covers the edge of the opening and the shape of the thin film formed on the substrate 122 is distorted. Moreover, the thin film material adhering to the shielding part of the mask 121 becomes useless or becomes particles, which causes a problem in terms of cost and quality.

  Furthermore, in addition to the substrate 122 and the mask 121, the material gas adheres to the tank wall and the deposition prevention plate (not shown) of the vacuum tank 111, and the thin film material becomes useless or becomes particles, resulting in a cost increase. There was a problem in terms of quality.

  On the other hand, Patent Document 1 or Patent Document 2 discloses an ink jet method in which a discharge liquid containing a thin film material is discharged from an ink jet discharge apparatus and landed on a predetermined position of a substrate to form a thin film having a predetermined shape on the substrate. ing. The ink jet method has an advantage that the above problem in the vacuum deposition method does not occur.

  However, in the ink jet method, the discharge liquid contains a solvent in addition to the thin film material. If the solvent remains in the thin film formed on the substrate, there is a problem that the film quality of the thin film is affected. Further, in the case where another thin film (undercoat film) is formed on the substrate surface in advance, when the discharge liquid lands on the substrate surface, the solvent in the discharge liquid may damage the undercoat film.

JP 2000-106278 A JP-A-2005-56614

  The present invention was created to solve the above-described disadvantages of the prior art, and an object thereof is to provide a technique capable of forming a thin film having a predetermined shape on a large substrate with high use efficiency of a thin film material. .

In order to solve the above-described problems, the present invention provides a vacuum chamber, a processing table disposed in the vacuum chamber, and an object to be deposited on the mounting surface, and a material gas discharged into the vacuum chamber. The material gas releasing device for reaching the film formation target on the mounting surface and forming a thin film, and the material gas discharging device and the processing table in one thin film forming direction parallel to the mounting surface. along a thin film forming apparatus and a mobile device Ru moved relative said material gas discharge device, disposed a hollow steam tank in which the material gas to the inside is disposed at a position facing the placing surface A plurality of discharge device main bodies respectively connected to the steam tanks, and position adjustment for individually moving each of the discharge device main bodies in a direction having a component perpendicular to the thin film forming direction and parallel to the mounting surface. device and a heating for heating the emission device body Has a location and, in the material gas discharge apparatus is disposed at a position closer to the placement surface than each of said discharge device body, heat insulating board is provided for shielding the radiant heat from the heated said discharge device body are, each said emission device body, the tip is connected to each capillary directed to the placement surface, the thin tube is a hole formed in each of said heat insulating board, spaced apart from the inner circumferential surface of the hole The heat insulating plate is brought into contact with a cooling container cooled by a cooling pipe , and the material gas in the steam tank is supplied to the discharge device main body and discharged from the tip of each thin tube, It is a thin film forming apparatus in which a thin film is formed by reaching the surface of a film formation target placed on a processing table.
The present invention is a thin film forming apparatus, and recognizes a relative position between the alignment mark and each of the emission device main bodies from an imaging device that images the alignment mark on the surface of the film formation target and a captured image of the imaging device. And a control device that sends a control signal to the position adjusting device to move the discharge device main bodies to predetermined positions corresponding to the discharge device main bodies on the surface of the film formation target. Device.
The present invention is a thin film forming apparatus, wherein at least a part between one end and the other end of a supply pipe connecting the steam tank and the discharge apparatus main body is formed of a flexible material capable of bending , and the discharge apparatus When the main body is moved relative to the steam tank in a direction parallel to the mounting surface and perpendicular to the thin film forming direction, the supply pipe is bent along with the relative movement .
The present invention is a thin film forming apparatus, wherein a gas generator having a thin film material disposed therein is disposed at a position separated from the steam tank, the gas generator is connected to the steam tank, and the gas generator The thin film forming apparatus is configured such that the thin film material is heated and evaporated in the apparatus to generate the material gas and is supplied to the vapor tank.
The present invention provides a thin film forming apparatus, the tip of the pre-Symbol tubules is the heat insulating board thin film forming apparatus is located closer to the mounting surface than.
The present invention is a thin film forming apparatus, in which a heat insulating material is disposed between the narrow tube and the inner periphery of the hole.
The present invention evacuates the inside of the vacuum chamber, supplies the material gas to the discharge device main body arranged in the vacuum chamber, and discharges it from the tip of the thin tube connected to the discharge device main body. The release device main body and the film formation target are moved relative to each other in parallel with one thin film formation direction parallel to the film formation target surface while reaching the surface of the film formation target facing the film. A thin film forming method for forming a thin film on a surface of a film object, wherein a plurality of the discharge apparatus main bodies are connected to the same vapor tank, and a material gas discharge apparatus is used to form a thin film on the film formation object surface A plurality of film formation straight lines, which are regions to be formed, are determined in advance in parallel to the thin film formation direction, and each of the emission device main bodies has a component that is parallel to the film formation object surface and perpendicular to the thin film formation direction. Move each in the direction individually, Tip of the serial tubules were facing each different the film forming straight, than each of said discharge apparatus body, the place heat insulating board in a position close to the mounting surface of the film-forming target is placed, the heat insulating board The narrow tube is inserted through the provided hole apart from the inner peripheral surface of the hole, the discharge device body is heated, the radiant heat from the discharge device body is shielded by the heat shield plate, and the heat shield plate is cooled. The heat insulating plate is brought into contact with the container, the heat insulating plate is cooled by the cooling container, the material gas is supplied into the steam tank and distributed to the discharge device main bodies, and discharged from the tips of the thin tubes, respectively, and the film formation While arriving at the surface of the object, the material gas release device and the film formation object are moved relative to each other in parallel with the thin film formation direction so as to be on the plurality of film formation straight lines on the surface of the film formation object. This is a thin film forming method for forming a thin film at the same time.
The present invention is a thin film forming method, wherein each of the emission device main bodies is individually moved in a direction parallel to the surface of the film formation object and having a component perpendicular to the film formation direction. This is a thin film forming method in which the alignment mark on the surface of the film is imaged and the relative position between the alignment mark and each of the emission device main bodies is recognized from the imaging result.

Since a thin film having a predetermined shape can be formed without using a mask, it becomes easy to form a pattern film on a large-area substrate.
Since a plurality of linear thin films can be formed simultaneously, the film forming speed is increased.
Since the material gas released from the tip of the narrow tube reaches and adheres to the surface of the film formation target before spreading, the thin film material can be saved.

Plan view of thin film forming apparatus of the present invention Sectional view taken along line AA of the thin film forming apparatus of the present invention Internal configuration diagram of discharge device main body (A)-(c): The figure for demonstrating the shape of the hollow part of the front-end | tip of a thin tube Internal configuration diagram of an example of a conventional thin film forming apparatus

<Structure of thin film forming apparatus>
The structure of the thin film forming apparatus of the present invention will be described.
FIG. 1 is a plan view of an example of the thin film forming apparatus 10, and FIG. 2 is a cross-sectional view taken along line AA.

  The thin film forming apparatus 10 is disposed in the vacuum chamber 11, the processing table 12 on which the film formation target 20 is disposed on the placement surface 13, and the material gas is released into the vacuum chamber 11. The material gas releasing device 30 for forming the thin film, the material gas releasing device 30 and the processing table 12 being made to reach the film formation target 20 on the mounting surface 13 in one thin film forming direction parallel to the mounting surface 13. 5 and a moving device that moves relative to each other. In FIG. 1, the vacuum chamber 11 is omitted.

The processing table 12 has a mounting surface 13 on which a plate-shaped film formation target 20 is placed. Here, the processing table 12 is placed inside the vacuum chamber 11 with the mounting surface 13 facing vertically upward. Has been.
A vacuum pump 14 is connected to the vacuum chamber 11 so that the inside can be evacuated.

The material gas discharge device 30 is disposed at a position facing the mounting surface 13 and one or more hollow steam tanks 32h and 32d in which material gas is disposed, and is connected to the steam tanks 32h and 32d, respectively. The plurality of discharge device main bodies 31 ₁ , 31 ₂ , 31 _3, and the respective discharge device main bodies 31 ₁ , 31 ₂ , 31 ₃ are respectively parallel to the mounting surface 13 and have a component perpendicular to the thin film formation direction 5. Position adjustment devices 53 ₁ , 53 ₂ , and 53 ₃ that individually move are provided.

  The thin film forming apparatus 10 of this example has two units, a first steam tank 32h and a second steam tank 32d. Here, the first and second steam tanks 32 h and 32 d are disposed inside the vacuum chamber 11, but may be disposed outside the vacuum chamber 11.

One or a plurality of gas generators 33h _R , 33h _G , 33h _B , 33d _R , 33d _G , in which a thin film material is disposed, are spaced apart from the first and second steam tanks 32h, 32d. 33d _B is disposed.

The thin film forming apparatus 10 of this example includes R, G, B first gas generators 33h _R , 33h _G , 33h _B and R, G, B second gas generators 33d _R , 33d _G , 33d. _{Has B.} In the first gas generators 33h _R , 33h _G , and 33h _{B for R} , _G , and _B , organic thin film materials that are hosts for each color of R (red), G (green), and B (blue) are separately provided. In the second gas generators 33d _R , 33d _G , and 33d _B for R, G, and B, organic materials that are dopants for the colors R, G, and B are separately arranged.

The first and second steam tanks 32h and 32d are connected to first and second pipes 38h and 38d communicating with the inside, respectively. The first gas generators 33h _R , 33h _G and 33h _B for R, G and B are connected to the first pipe 38h via the first valves 39h _R , 39h _G and 39h _B for R, G and B, respectively. is, R, G, the second gas generator 33d _R of B, 33d _G, the 33d _B, respectively R, G, second valve 39d _R of B, 39d _G, a second pipe through 39d _B 38d.

Each gas generator _{33h R, 33h G, 33h B} , 33d R, 33d G, the 33d _B, where is wound linear heater (not shown), respectively. When the heater generates heat, the thin film materials in the gas generators 33h _R , 33h _G , 33h _B , 33d _R , 33d _G , 33d _B are individually heated and raised to a temperature equal to or higher than the evaporation temperature, and the thin film material A material gas consisting of the above-mentioned vapor is generated.

Each gas generator 33h _R , 33h _G , 33h _B , 33d _R , 33d _G , 33d _B includes a carrier gas introduction device 37h _R , 37h _G , 37h _B , 37d _R , 37d _G , 37d _B are connected.

With the first valve 39h _R , 39h _G or 39h _B of _R , _G or _B opened, the carrier gas introduction device 37h _R , 37h _G or 37h _B to the first gas generator 33h of R, G or B _{When the} carrier gas is introduced into _{R 1} , 33h _G or 33h _B , the generated material gas of the R, G or B host is supplied to the first steam tank 32h through the first pipe 38h together with the carrier gas. It has become so.

Also, R, the second valve 39d _R of G or B, with open 39d _G or 39d _B, a carrier gas introduction unit 37d _R, from 37d _G or 37d _B R, G or B the second gas generating When the carrier gas is introduced into the apparatus 33d _R , 33d _G or 33d _B , the generated material gas of the R, G or B host together with the carrier gas passes through the second pipe 38d to the second steam tank 32d. It comes to be supplied.

The structure of the discharge device main bodies 31 ₁ , 31 ₂ , 31 ₃ is the same, and FIG. 3 will be described by taking _one discharge device main body 31 ₁ as an example.
Emitting device main body 31 ₁ is disposed at the position facing the mounting surface 13, here arranged above the mounting surface 13.

The portion facing the discharge device body 31 ₁ of the mounting surface 13, thin tube 35 ₁ is provided vertically, the tip of the capillary 35 ₁ is directed to the mounting surface 13. The hollow portion of the thin tube 35 ₁ is connected to the space inside the discharge device main body 31 ₁ .

The steam tanks 32h and 32d and the discharge device main body 31 ₁ are connected by supply pipes 34h ₁ and 34d ₁ formed of a flexible material that can be bent at least partially. As the flexible material, for example, heat-resistant rubber or bellows can be used.

Here, a part of the supply pipes 34h ₁ and 34d ₁ is configured so as to be able to expand and contract. However, as long as it can be bent, it is not limited to this configuration, so that the slack is expanded or contracted by being relaxed. It may be configured.

Here, one end of the supply pipes 34h ₁ and 34d ₁ is fixed to the discharge device main body 31 _1, and the other end of the supply pipes 34h ₁ and 34d ₁ is fixed to the steam tanks 32h and 32d, respectively. At least a part between one end and the other end of the supply pipes 34h ₁ and 34d ₁ is formed of a flexible material, and the discharge device main body 31 ₁ is moved relative to the steam tanks 32h and 32d in a direction having six components in the width direction. Then, the supply pipes 34h ₁ and 34d ₁ can be bent with relative movement.

The material gas supplied to the vapor tanks 32h and 32d is supplied to the discharge device main body 31 ₁ through the supply pipes 34h ₁ and 34d ₁ together with the carrier gas.
Here the steam tank 32h is on the outer periphery and the outer periphery of the supply pipe 34h _1, 34d ₁ of 32d are wound linear heater 61, when the heat the linear heater 61, the steam tank 32h, 32d and supply pipe 34h ₁ and 34d ₁ are heated to raise the temperature to a temperature equal to or higher than the evaporation temperature of the thin film material. Therefore, the material gas supplied to the inside of the steam tanks 32h and 32d is prevented from depositing on the inner wall surfaces of the steam tanks 32h and 32d and the inner wall surfaces of the supply pipes 34h ₁ and 34d ₁ .

Here, the first and second steam tanks 32h and 32d are separately connected to the discharge device main body 31 ₁ by two supply pipes 34h ₁ and 34d ₁ , respectively, and an organic material gas for the host and an organic material for the dopant gas separately supplied to the discharge device body 31 ₁ with carrier gas, is mixed with a release device body 31 within _1, is discharged into the vacuum chamber 11 from the distal end of the capillary tube 35 ₁ through a capillary 35 ₁ .

Figure 4 (a) shows a schematic view of a portion facing the discharge device body 31 ₁ of the mounting surface 13. Shape of the hollow portion of the tip of the capillary 35 _1, four sides are parallel rectangles and thin film forming direction 5 parallel to the film forming direction 5 or the mounting surface 13 and perpendicular width direction 6, here a square. Thus, the material gas is discharged in a uniform discharge amount in the width direction 6 from the tip of the capillary 35 _1.

Here the position adjustment device 53 ₁ is has a force generator and the guide (not shown). The power generation unit is, for example, a vacuum-compatible motor or a piezo element. The guide is extended along a direction having a component parallel to the mounting surface 13 and perpendicular to the thin film forming direction 5.

The position adjusting device 53 ₁ is configured to transmit the power of the motor and the piezo element to the cooling container 41 ₁ and to move the cooling container 41 _{1 along} with the discharge device main body 31 ₁ along the guide. At least a part of the supply pipes 34h ₁ and 34d ₁ is formed of a flexible material. When the position adjusting device 53 ₁ is operated, the steam tanks 32h and 32d that are stationary are bent while the supply pipes 34h ₁ and 34d ₁ are bent. and to be able to move the release device main body 31 _1, in a direction having a thin film forming direction 5 parallel to the mounting surface 13 a perpendicular component with respect.

Referring to FIG. 2, the narrow tubes 35 ₁ , 35 ₂ , 35 ₃ of the discharge device main bodies 31 ₁ , 31 ₂ , 31 ₃ are separated in the width direction 6 parallel to the mounting surface 13 and perpendicular to the thin film forming direction 5. Are arranged. When the position adjusting devices 53 ₁ , 53 ₂ , and 53 ₃ are individually operated, the distance between the adjacent two narrow tubes 35 ₁ , 35 ₂ , and 35 _{3 in} the width direction 6 can be adjusted.

In addition, the material gas release device 30 performs alignment from the captured images of the imaging devices 51 ₁ , 51 ₂ , 51 ₃ and the imaging devices 51 ₁ , 51 ₂ , 51 ₃ that image the alignment marks on the surface of the film formation target 20. The relative position between the mark and each discharge device main body 31 ₁ , 31 ₂ , 31 ₃ is recognized, and a control signal is sent to the position adjustment device 53 ₁ , 53 ₂ , 53 ₃ , and each discharge device main body 31 ₁ , 31 ₂ , 31 _3, and has the surface of the film-forming object 20, and a controller 52 for moving to a predetermined position corresponding to respectively the discharge device body 31 _1, 31 _2, 31 _3.

Here, the imaging devices 51 ₁ , 51 ₂ , and 51 ₃ are CCD cameras, and are arranged such that the imaging surface faces the mounting surface 13, and images the alignment mark provided on the surface of the film formation target 20. The image is transmitted to the control device 52.

In this example, the imaging devices 51 ₁ , 51 ₂ , 51 ₃ are respectively attached to the wall surfaces of the cooling containers 41 ₁ , 41 ₂ , 41 ₃ . The structures of the imaging devices 51 ₁ , 51 ₂ , and 51 ₃ are the same. If the imaging device denoted by reference numeral 51 ₁ is described as a representative, the position in the captured image taken by the imaging device 51 ₁ and the cooling container 41 will be described. _If the relative positional relationship in the width direction 6 with the narrow tube 351 of the discharge device main body 31 ₁ arranged in ₁ is obtained in advance, the alignment mark and the thin tube of the discharge device main body 31 ₁ are obtained from the captured image of the image pickup device 51 _1. the relative position in the width direction 6 is adapted to be seen with the 35 _1.

Different imaging devices 51 ₁ , 51 ₂ , 51 ₃ are attached to the discharge device main bodies 31 ₁ , 31 ₂ , 31 ₃ via cooling containers 41 ₁ , 41 ₂ , 41 ₃ , for example. Even if there is an uncertain length element in one or both of the deposition target 20 and the material gas release device 30 such as the surface of the film partially expands and contracts due to heat, the alignment mark and the release device main body 31 The relative positions in the width direction 6 of the thin tubes 35 ₁ , 35 ₂ , and 35 _{3 of 1} , 31 ₂ , and 31 ₃ can be accurately recognized.

The control device 52 recognizes the alignment mark from the captured images transmitted from the imaging devices 51 ₁ , 51 ₂ , 51 ₃ , and the alignment marks and the narrow tubes 35 ₁ , 35 _{2 of the} discharge device main bodies 31 ₁ , 31 ₂ , 31 _3. recognizes the relative position in the width direction 6 of 35 _3.

When predetermined positions corresponding to the respective discharge device main bodies 31 ₁ , 31 ₂ , 31 ₃ are determined in advance on the surface of the film formation target 20, the control device 52 causes the discharge device main bodies 31 ₁ , 31 ₂ , 31. The error amounts in the width direction 6 between the _three narrow tubes 35 ₁ , 35 ₂ , 35 ₃ and the corresponding predetermined positions on the surface of the film formation target 20 are respectively obtained, and the position adjusting devices 53 ₁ , 53 ₂ , 53 ₃ are respectively determined. By sending a control signal, the discharge device main bodies 31 ₁ , 31 ₂ , 31 ₃ are individually moved to reduce the absolute value of the error amount, respectively, and the narrow tubes 35 of the respective discharge device main bodies 31 ₁ , 31 ₂ , 31 ₃ are sent. The tips of ₁ , 35 ₂ , and 35 ₃ are configured to face the corresponding predetermined positions on the surface of the film formation target 20.

  Here, the moving device has a linear rail 18 and a motor (not shown). The rail 18 is oriented parallel to one thin film forming direction 5 parallel to the mounting surface 13, and is arranged between the processing table 12 and the wall surface of the vacuum chamber 11, and here faces the lower side of the processing table 12. It is arranged between the surface and the bottom surface of the vacuum chamber 11. A straight groove is provided along the rail 18 in a portion facing the rail 18 of the processing table 12, the rail 18 is fitted into the groove, and the processing table 12 is slidable along the rail 18. The motor is configured to transmit power to the processing table 12 so that the processing table 12 can move linearly along the rail 18 at a constant speed.

When the processing table 12 is moved by the moving device, the film formation target 20 on the processing table 12 is linearly moved along the thin film forming direction 5 below the stationary discharge device main bodies 31 ₁ , 31 ₂ , 31 _3. The material gas is distributed from the vapor tanks 32h, 32d to the discharge device bodies 31 ₁ , 31 ₂ , 31 ₃ and discharged from the tips of the thin tubes 35 ₁ , 35 ₂ , 35 _3. A plurality of linear thin films are simultaneously formed in parallel with the thin film forming direction 5 on the surface of the film object 20 without providing a mask.

The moving apparatus of the present invention is not limited to the above configuration as long as the processing table 12 and the discharge device main bodies 31 ₁ , 31 ₂ , 31 ₃ can be relatively linearly moved along the thin film forming direction 5. 12, the discharge device main bodies 31 ₁ , 31 ₂ , 31 ₃ may be configured to move linearly along the thin film forming direction 5, or the processing base 12 and the discharge device main bodies 31 ₁ , 31 ₂ , 31 _3. May be configured to linearly move individually along the thin film forming direction 5.

Referring to FIG. 2, each discharge device main body 31 ₁ , 31 ₂ , 31 ₃ has a heating device, and the heat supplied from the heating device causes the discharge device main bodies 31 ₁ , 31 ₂ , 31 _{3 to be} inside. The supplied material gas is prevented from being deposited on the inner wall surfaces of the discharge device main bodies 31 ₁ , 31 ₂ , 31 ₃ .

Here, the heating device is composed of linear heaters 36 ₁ , 36 ₂ , 36 ₃ , and the linear heaters 36 ₁ , 36 ₂ , 36 ₃ are wound around the outer periphery of the discharge device main bodies 31 ₁ , 31 ₂ , 31 _3. ing. When the linear heaters 36 ₁ , 36 ₂ , and 36 ₃ generate heat, the discharge device main bodies 31 ₁ , 31 ₂ , and 31 ₃ and the thin tubes 35 ₁ , 35 ₂ , and 35 ₃ are heated, and the thin film material supplied is supplied. The temperature is raised to a temperature higher than the evaporation temperature.

Between the discharge device main bodies 31 ₁ , 31 ₂ , 31 ₃ and the mounting surface 13, heat insulating plates 42 ₁ , 42 ₂ , 42 ₃ are respectively arranged.
Here, each discharge device main body 31 ₁ , 31 ₂ , 31 ₃ is arranged in a separate cooling vessel 41 ₁ , 41 ₂ , 41 ₃ , respectively.

Each cooling container 41 ₁ , 41 ₂ , 41 ₃ has a bottom portion disposed between the discharge device main bodies 31 ₁ , 31 ₂ , 31 ₃ and the mounting surface 13, and each cooling container 41 ₁ , 41 ₂ , 41 ₃ is formed from the heated discharge device main bodies 31 ₁ , 31 ₂ , 31 ₃ and the linear heaters 36 ₁ , 36 ₂ , 36 ₃ wound around the discharge device main bodies 31 ₁ , 31 ₂ , 31 _3. The heat insulating plates 42 ₁ , 42 ₂ , and 42 ₃ are configured to shield the radiant heat that is released and prevent the radiant heat from reaching the film formation target 20 disposed on the mounting surface 13.

Each of the heat insulating plates 42 ₁ , 42 ₂ , and 42 ₃ faces the mounting surface 13 and is disposed away from the mounting surface 13. The heat insulating plates 42 ₁ , 42 ₂ , and 42 ₃ are provided with holes 43 ₁ , 43 ₂ , and 43 ₃ , respectively, and the discharge device main bodies 31 ₁ , arranged in the cooling containers 41 ₁ , 41 ₂ , and 41 ₃ , respectively. 31 _2, 31 ₃ tubule 35 ₁ connected to, 35 _2, 35 _3, is inserted through the insulation plate 42 _1, 42 _2, 42 ₃ of holes 43 _1, 43 _2, 43 _3, the capillary tube 35 _1, 35 The tips of ₂ and 35 ₃ are extended to a position closer to the mounting surface 13 than the heat insulating plates 42 ₁ , 42 ₂ and 42 ₃ , and the material gas released from the thin tubes 35 ₁ , 35 ₂ and 35 ₃ is heated. ₁ , 42 ₂ , and 42 ₃ are not brought into contact with each other.

Here, cooling pipes 44 ₁ , 44 ₂ , and 44 ₃ through which a liquid cooling medium flows are wound around the outer periphery of the side walls of the cooling containers 41 ₁ , 41 ₂ , and 41 ₃ , and radiant heat is supplied to the cooling containers 41 ₁ , It is shielded by 41 ₂ and 41 _{3 so} that the tank wall of the vacuum chamber 11 is not heated.

Heat insulating board 42 _1, 42 _2, 42 and ₃ surface facing the mounting surface 13 of the arriving radiation heat on the opposite side, but the heat insulating plate 42 _1, 42 _2, 42 ₃ is cooled container 41 _1, 41 _2, 41 ₃ is in contact with, the cooling pipes 44 _1, 44 _2, 44 ₃ by a cooling vessel 41 _1, 41 _2, 41 ₃ is cooled, heat insulating board 42 _1, 42 _2, 42 ₃ is indirectly cooled It is designed not to become hot.

Heat insulating board 42 _1, 42 _2, 42 ₃ of holes 43 _1, 43 _2, 43 the diameter of the inner peripheral surface of _3, thin tube 35 _1, 35 _2, 35 ₃ larger than the outer diameter, releasing apparatus main body 31 _1, It is made smaller than the width of 31 ₂ , 31 ₃ , and the outer peripheral surface of the thin tubes 35 ₁ , 35 ₂ , 35 ₃ and the inner peripheral surface of the holes 43 ₁ , 43 ₂ , 43 ₃ are separated from each other, or the thin tube 35 A portion between the outer peripheral surface and the inner peripheral surface of ₁ , 35 ₂ and 35 ₃ is filled with a heat insulating material.

In either case, capillary 35 ₁ which is heated, 35 _2, 35 ₃ of the heat is not conducted to the heat insulating board 42 _1, 42 _2, 42 _3, thin tube 35 _1, 35 _2, 35 ₃ tip thin film material It is not cooled to a temperature lower than the evaporation temperature.

As described above, the tips of the thin tubes 35 ₁ , 35 ₂ , 35 ₃ are set to the evaporating temperature or higher, so that the material gas is not condensed and blocked at the tips of the thin tubes 35 ₁ , 35 ₂ , 35 ₃ . In addition, the film formation target 20 disposed on the placement surface 13 is not heated by radiant heat.

  A cooling device 16 is disposed inside the processing table 12, the film formation target 20 is cooled by the cooling device 16, and the material gas that has reached the surface of the film formation target 20 is efficiently aggregated to form a material gas. Is reflected on the surface of the film formation target 20 and is difficult to diffuse into the vacuum chamber 11.

Referring to FIG. 4A, for example, the width of the hollow portion at the tip of the thin tubes 35 ₁ , 35 ₂ , 35 ₃ is about 20 μm and depends on the width of the film forming line (film forming straight line). The distance between the surface of the film formation target 20 arranged in the above and the tips of the thin tubes 35 ₁ , 35 ₂ , 35 ₃ can be formed within a range of 0.01 mm or more and 5 cm or less. At this time, the material gas released from the narrow tubes 35 ₁ , 35 ₂ , 35 ₃ reaches the film formation target 20 before spreading and is prevented from diffusing into the vacuum chamber 11, and the thin film material is wasted. do not become.

The width of the line formed of a thin film can be adjusted by the distance between the tip of the capillary 35 _1, 35 _2, 35 width and the film-forming target of the hollow portion of the _three tip 20 surface and capillary 35 _1, 35 _2, 35 ₃ . Capillary 35 _1, 35 _2, 35 ₃ of the width forming target 20 surface and the thin tube 35 ₁ and the small hollow portion of the tip, 35 _2, 35 ₃ of the line distance is the shorter film between the tip The width is small.

The hollow portions at the tips of the thin tubes 35 ₁ , 35 ₂ , and 35 _{3 according to} the present invention have a square shape as shown in FIG. 4A if the four sides are squares parallel to the thin film forming direction 5 or the width direction 6. The width of the thin film formation direction 5 may be a narrow rectangle longer than the length of the width direction 6 as shown in FIG. 4B, or the length of the thin film formation direction 5 may be as shown in FIG. It may be a wide rectangle whose length is shorter than the length in the width direction 6.

In the case of a narrow rectangle, the processing table 12 and the discharge device main bodies 31 ₁ , 31 ₂ , 31 ₃ are relatively moved along the thin film formation direction 5 at the same moving speed as in the case of the square, and the material gas is discharged with the same discharge amount. When the is released, the thin film can be formed thicker than the square case.
Moreover, in the case of a wide rectangle, a thin film having a wider width in the width direction 6 than in the case of a square can be formed.

As shown in FIG. 1, film thickness sensors 62h and 62d are disposed in the vacuum chamber 11, sample tubes are provided in the first and second pipes 38h and 38d, respectively, and R, G, or B The material gas generated in the first and second gas generators 33h _R , 33h _G , 33h _B , 33d _R , 33d _G , 33d _B and supplied to the first and second pipes 38h, 38d is the film thickness sensor 62h. , 62d, and a thin film is formed.

  When the relationship between the film thickness of the thin film detected by the film thickness sensors 62h and 62d and the film thickness of the thin film formed on the surface of the film formation target 20 is obtained in advance, the film thickness detected by the film thickness sensors 62h and 62d. From this value, the film thickness value of the thin film on the surface of the film formation target 20 is known.

Transmembrane pressure sensor 62h, the detection result of the 62d first, second gas generator _{33h R, 33h G, 33h B} , 33d R, and feedback 33d _G, the heater 33d _B, emitting apparatus main body 31 _1, 31 ₂ , 31 ₃ may be configured to control the amount of steam released from the thin tubes 35 ₁ , 35 ₂ , 35 ₃ .

<Thin film formation method>
A thin film forming method using the thin film forming apparatus 10 of the present invention will be described.
A plurality of linear film formation straight lines, which are regions to be formed, are determined in advance on the surface of the film formation target 20, and one or more alignment marks are determined in advance.
In addition, one discharge device main body is associated with one film formation straight line. That is, each discharge device main body is associated with a different film formation straight line.

Referring to FIG. 1, in this example, a set of three R, G, and B film forming straight lines 22 _R , 22 _G , and 22 _B are arranged in parallel with each other on the surface of the film forming object 20. Yes.
A plurality of discharge device main bodies, here 31 ₁ , 31 ₂ , and 31 ₃ corresponding to the respective film forming straight lines 22 _R , 22 _G , and 22 _B , are determined in advance.
Further, the position in the captured image captured by the imaging devices 51 ₁ , 51 ₂ , 51 ₃ and the narrow tubes 35 ₁ , 35 ₂ , 35 ₃ of the discharge device main bodies 31 ₁ , 31 ₂ , 31 ₃ in the width direction 6. The relative positional relationship is obtained in advance.

The R, G, B first gas generators 33h _R , 33h _G , 33h _B are disposed with R, G, B host organic materials, respectively, and the R, G, B second gas generators 33d _R, 33d _G, placing R in 33d _B, G, _B of the dopant of thin film materials, respectively.
The inside of the vacuum chamber 11 is evacuated by the evacuation apparatus 20, and then the evacuation is continued to maintain the vacuum atmosphere.

While maintaining the vacuum atmosphere in the vacuum chamber 11, the film formation target 20 is carried into the vacuum chamber 11, and the film formation straight lines 22 _R , 22 _G , and 22 _B on the surface of the film formation target 20 are aligned with the thin film formation direction 5. It arrange | positions on the mounting surface 13 of the process stand 12 toward parallel.
The alignment marks on the surface of the film formation target 20 are imaged by the imaging devices 51 ₁ , 51 ₂ , 51 ₃ .

Control device 52, imaging apparatus 51 _1, 51 _2, 51 ₃ of recognizing an alignment mark from an imaging result, the alignment mark and the emission device main body 31 _1, 31 _2, 31 ₃ of the tubule 35 _1, 35 _2, 35 ₃ It recognizes the relative position in the width direction 6 and, where the narrow tube 35 _1, 35 _2, 35 ₃ of the discharge device body 31 _1, 31 _2, 31 _3, corresponding to the deposition straight 22 _R of R, respectively An error amount in the width direction 6 is obtained.

Then, the control unit 52, when the error amount of the discharge apparatus main body 31 _1, 31 ₂ or 31 ₃ is not less than a predetermined allowable value, sends a control signal to the position adjusting device 53 _1, 53 ₂ or 53 ₃ Then, the discharge device main body 31 ₁ , 31 ₂ or 31 ₃ is moved to reduce the absolute value of the error amount, and the narrow tubes 35 ₁ , 35 ₂ , 35 _{3 of the} discharge device main bodies 31 ₁ , 31 ₂ , 31 ₃ are reduced. The tip of each is opposed to a different R-deposition straight line 22 _R.

The first and second valves 39h _R , 39h _G , 39h _B , 39d _R , 39d _G , and 39dB of _R , _G , and _B are closed.
The film formation target 20 is cooled by the cooling device 16 of the processing table 12.
Further, a cooling medium whose temperature is controlled below the evaporation temperature of the thin film material is passed through the cooling pipes 44 ₁ , 44 ₂ , and 44 ₃ to cool the cooling containers 41 ₁ , 41 ₂ , and 41 ₃ .

By the linear heaters 61, 36 ₁ , 36 ₂ , 36 ₃ , the first and second steam tanks 32h, 32d and the supply pipes 34h ₁ , 34d ₁ , 34h ₂ , 34d ₂ , 34h ₃ , 34d ₃ and the respective discharges The apparatus main bodies 31 ₁ , 31 ₂ , 31 ₃ are heated to a temperature equal to or higher than the evaporation temperature of the thin film material.
Here, the R color host and dopant organic thin film materials in the first and second gas generators 33h _R and 33d _R of R are heated to generate vapor.

The carrier gas is introduced into the R first and second gas generators 33h _R and 33d _R from the R first and second carrier gas introduction devices 37h _R and 37d _R, and the R first and second _R The valves 39h _R and 39d _R are opened to introduce the R-color host and dopant material gases into the first and second vapor tanks 32h and 32d together with the carrier gas, respectively.

The material gas in the first and second steam tanks 32h and 32d is distributed to the discharge device main bodies 31 ₁ , 31 ₂ and 31 ₃ together with the carrier gas, and the discharge device main bodies 31 ₁ , 31 ₂ and 31 ₃ are distributed. The mixed gas is discharged from the tips of the thin tubes 35 ₁ , 35 ₂ , and 35 ₃ , reaches the different R film forming straight lines 22 _R on the surface of the film forming target 20, aggregates, and adheres.

  The carrier gas is reflected from the surface of the film formation target 20 and is evacuated by the vacuum pump 14. Therefore, the carrier gas does not remain in the formed thin film and does not affect the film quality of the thin film. Even when a base film, which is another thin film, is formed in advance on the surface of the film formation target 20, the carrier gas does not damage the base film.

When the processing table 12 is moved together with the film formation target 20 by the moving device at a constant speed along the thin film forming direction 5 relative to each of the discharge device main bodies 31 ₁ , 31 ₂ , 31 ₃ . Even without providing a mask, an R-color linear organic thin film is simultaneously formed on a plurality of film-forming straight lines 22 _R parallel to each other.

Next, the first and second valves 39h _R and 39d _R of _R are closed so that the material gas does not reach the film formation target 20.
The thin film forming apparatus 10 has an auxiliary moving device (not shown) that moves the discharge device main bodies 31 ₁ , 31 ₂ , 31 ₃ together relative to the processing table 12 along the width direction 6.

The discharge device main bodies 31 ₁ , 31 ₂ , 31 ₃ are moved together in the width direction 6 with respect to the processing table 12 by the auxiliary moving device, and the narrow tubes of the discharge device main bodies 31 ₁ , 31 ₂ , 31 ₃ are moved. The tips of 35 ₁ , 35 ₂ , and 35 ₃ are made to face different undeposited R deposition straight lines 22 _R , respectively.

When the accuracy of movement by the auxiliary movement device is rough, after the movement, a pattern that becomes an alignment mark on the surface of the film formation target 20 is recognized by the imaging devices 51 ₁ , 51 ₂ , and 51 ₃ , and the emission device is obtained by the control device 52. An error amount between the main body 31 ₁ , 31 ₂ , 31 ₃ and the corresponding undeposited R deposition straight line 22 _R is obtained, and the error amount of the discharge device main body 31 ₁ , 31 _2, or 31 ₃ is a predetermined allowable value. If not below, the discharge device main body 31 ₁ , 31 ₂ or 31 ₃ is individually moved by the position adjusting device 53 ₁ , 53 ₂ or 53 ₃ , and the narrow tubes of the discharge device main bodies 31 ₁ , 31 ₂ , 31 ₃ The tips of 35 ₁ , 35 ₂ , and 35 ₃ may be accurately opposed to the corresponding R film forming straight line 22 _R , respectively.

Next, the R first and second valves 39h _R and 39d _R are opened to release the R-colored material gas from the tips of the thin tubes 35 ₁ , 35 ₂ , and 35 ₃ , and the surfaces of the film formation target 20 are different from each other. Each of them is attached to an undeposited _R film deposition line 22 _R.

When the processing table 12 is moved together with the film formation target 20 by the moving device at a constant speed along the thin film forming direction 5 relative to each of the discharge device main bodies 31 ₁ , 31 ₂ , 31 ₃ . Then, R-color linear organic thin films are simultaneously formed on a plurality of undeposited R film-forming straight lines 22 _R that are parallel to each other.

By repeating the above-described film forming process, an R-color organic thin film is formed on each of the other R film forming straight lines 22 _R on the surface of the film forming target 20.
When the width of the thin film formed by one relative movement of the single thin tube 35 ₁ , 35 ₂ or 35 ₃ is narrower than the width of the single film formation straight line 22 _R to be formed, the plurality of A plurality of thin films formed by one relative movement are brought into contact with the side surfaces.
Since a plurality of thin films are simultaneously formed by one relative movement, the film formation rate is higher than the case where the material gas is discharged from only one thin tube.

After the thin film is formed on the _R deposition straight line 22 _R , the release device main bodies 31 ₁ , 31 ₂ , 31 ₃ are moved to the outside of the outer periphery of the deposition target 20 by the moving device, and the material gas is formed. The heating of the thin film material is stopped while introducing the carrier gas into the first and second gas generators 33h _R and 33d _{R of R} without reaching the film object 20. The R-colored material gas remaining in the first and second steam tanks 32h and 32d and the discharge device main bodies 31 ₁ , 31 ₂ and 31 ₃ is discharged into the vacuum chamber 11 together with the carrier gas, and is vacuumed. The pump 14 is evacuated. After the discharge of the R-color material gas, the R first and second valves 39h _R and 39d _R are closed.

The discharge device main bodies 31 ₁ , 31 ₂ , 31 ₃ are moved together in the width direction 6 with respect to the processing table 12 by the auxiliary moving device, and the narrow tubes 35 of the discharge device main bodies 31 ₁ , 31 ₂ , 31 ₃ are moved. ₁ , 35 ₂ , and 35 ₃ are respectively opposed to different G film forming straight lines 22 _G, and the G film forming straight line 22 _G is colored _G in the same manner as the film forming process of the _R film forming straight line 22 _R. Each organic thin film is formed.

After finishing to form a thin film on the film-forming linear 22 _G of G, in the same manner as the process for forming the film-forming linear 22 _G of G, respectively forming B color of the organic thin film was attached to the film straight 22 _B of the B.
In this manner, a plurality of sets of three linear organic thin films of R color, G color, and B color are formed in parallel on the surface of the film formation target 20.

  When manufacturing an organic EL display, it is possible to form HIL / HTL with a frame mask, and then produce R, G, B light emitting dots with the present invention, and then make an ETL / EIL / electrode layer with the frame mask.

  The thin film formed in the present invention is not limited to one layer. For example, in the case of R color, G color, or B color from the film formation target 20 side, TCO substrate / HIL / HTL / EL (R) / ETL / EIL Forming a multilayer thin film of TCO substrate / HIL / HTL / EL (G) / ETL / EIL or a multilayer thin film of TCO substrate / HIL / HTL / EL (B) / ETL / EIL The RGB thin film can be repeatedly arranged in this order on the film formation target 20.

5 …… Direction of thin film formation 10 …… Thin film forming device 11 …… Vacuum chamber 12 …… Processing table 13 …… Placement surface 20 …… Deposition target object 30 …… Material gas release device 31 ₁ , 31 ₂ , 31 ₃ ...... emitting device main body 32h, 32d ...... steam tank 35 _1, 35 _2, 35 ₃ ...... tubules _{33h R, 33d G, 33h B} , 33d R, 33h G, 33d B ...... gas generator 34h _1, 34d ₁ , 34h ₂ , 34d ₂ , 34h ₃ , 34d ₃ ...... Supply pipes 42 ₁ , 42 ₂ , 42 ₃ ...... Heat insulating plates 43 ₁ , 43 ₂ , 43 ₃ ...... Holes 51 ₁ , 51 ₂ , 51 ₃ ...... Imaging Device 52... Control device 53 ₁ , 53 ₂ , 53 ₃ ...... Position adjustment device

Claims (8)

A vacuum chamber;
A processing table disposed in the vacuum chamber, and a film formation target is disposed on a mounting surface;
A material gas discharge device for discharging a material gas into the vacuum chamber to reach the film formation target on the mounting surface, and forming a thin film;
It said material said processing stage a gas discharge device, a thin film forming apparatus and a Ru mobile device are relatively moved along the mounting surface and parallel to one of the thin film forming direction,
The material gas discharge device comprises:
A hollow steam tank in which the material gas is disposed;
A plurality of discharge device main bodies disposed at positions facing the mounting surface, each connected to the steam tank;
A position adjusting device that individually moves each of the discharge device main bodies in a direction parallel to the placement surface and having a component perpendicular to the thin film formation direction;
A heating device for heating the discharge device body;
Have
The material gas discharge device is provided with a heat insulating plate that is disposed at a position closer to the placement surface than each of the discharge device main bodies and shields radiant heat from the heated discharge device main body,
Each discharge device main body is connected to a thin tube whose tip is directed to the mounting surface, and the thin tube is inserted into a hole formed in each of the heat insulating plates so as to be separated from the inner peripheral surface of the hole. And
The heat insulating plate is in contact with a cooling container cooled by a cooling pipe;
The material gas in the vapor tank is supplied to the discharge device main body, discharged from the tip of each thin tube, reaches the surface of the film formation target disposed on the processing table, and forms a thin film. Thin film forming equipment. An imaging device for imaging an alignment mark on the surface of the film formation target;
Recognizing the relative position between the alignment mark and each discharge device main body from the captured image of the image pickup device, and sending a control signal to the position adjustment device, each discharge device main body is attached to the surface of the film formation target A control device for moving the discharge device main body to a predetermined position corresponding to each of the discharge device main bodies;
The thin film forming apparatus according to claim 1. At least a part between one end and the other end of the supply pipe connecting the steam tank and the discharge device main body is formed of a flexible material that can be bent , and the discharge device main body is formed with respect to the steam tank. 3. The thin film forming apparatus according to claim 1, wherein when the relative movement is performed in a direction parallel to the placement surface and perpendicular to the thin film formation direction, the supply pipe is bent along with the relative movement . 4. A gas generator in which a thin film material is disposed inside is disposed at a position separated from the steam tank,
The gas generator is connected to the steam tank, and the thin film material is heated and evaporated in the gas generator to generate the material gas, which is supplied to the steam tank. The thin film forming apparatus according to claim 3. Before SL capillary tip is the heat insulating board thin film forming apparatus according to any one of claims 1 to 4 which is located closer to the mounting surface than.   The thin film forming apparatus according to claim 5, wherein a heat insulating material is disposed between the narrow tube and the inner periphery of the hole. The inside of the vacuum chamber is evacuated, and the material gas is supplied to the discharge device main body arranged in the vacuum chamber, discharged from the tip of the thin tube connected to the discharge device main body, and facing the tip of the thin tube. While arriving at the surface of the film object, the discharge device main body and the film formation object are relatively moved in parallel with one thin film formation direction parallel to the surface of the film formation object, A thin film forming method for forming a thin film on a surface,
Using a material gas discharge device in which a plurality of the discharge device main bodies are connected to the same steam tank,
A plurality of film formation straight lines that are regions to be formed on the surface of the film formation object are determined in advance in parallel with the thin film formation direction,
Each of the discharge device main bodies is individually moved in a direction having a component perpendicular to the thin film formation direction and parallel to the surface of the film formation target so that the tip of each capillary tube faces the different film formation straight line. ,
A heat insulating plate is disposed at a position closer to the placement surface on which the film formation target is placed than each of the discharge device main bodies,
In the hole provided in the heat insulating plate, the capillary tube is inserted away from the inner peripheral surface of the hole,
The discharge device main body is heated, radiant heat from the discharge device main body is shielded by the heat insulating plate, the heat insulating plate is brought into contact with a cooling container, the heat insulating plate is cooled by the cooling container, and a material gas is converted into the vapor The material gas releasing device and the film formation target are supplied into the tank and distributed to the discharge device main bodies, discharged from the tips of the thin tubes, and reaching the surface of the film formation target. A thin film forming method for forming a thin film simultaneously on the plurality of film forming straight lines on the surface of the film forming object by relatively moving in parallel with the thin film forming direction. Before each of the emission device main bodies is individually moved in a direction parallel to the film formation object surface and having a component perpendicular to the thin film formation direction, the alignment mark on the surface of the film formation object is imaged. The thin film forming method according to claim 7 , wherein a relative position between the alignment mark and each of the discharge device main bodies is recognized from the result.

Images