TWI386516B - Apparatus for fabrication of carbon nanotubes - Google Patents
Apparatus for fabrication of carbon nanotubes Download PDFInfo
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- TWI386516B TWI386516B TW94137884A TW94137884A TWI386516B TW I386516 B TWI386516 B TW I386516B TW 94137884 A TW94137884 A TW 94137884A TW 94137884 A TW94137884 A TW 94137884A TW I386516 B TWI386516 B TW I386516B
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本發明涉及一種奈米碳管製備設備,尤其係一種熱化學沈積之奈米碳管製備設備。 The invention relates to a carbon nanotube preparation device, in particular to a thermochemically deposited carbon nanotube preparation device.
奈米碳管係一種新型一維奈米碳材料,由日本研究人員飯島澄男(S.Iijima)於1991年首次發現。奈米碳管具有優異之性質,如高抗張強度與高熱穩定性,並且隨著奈米碳管螺旋方式之變化,奈米碳管可呈現出金屬性或半導體性等。由於奈米碳管具有理想之一維結構以及在力學、電學、熱學等領域優良之性質,其於材料科學、化學、物理學等交叉學科領域已展現出廣闊之應用前景。因此,實現奈米碳管之可控生長,係將奈米碳管推向應用之關鍵。 Nano carbon tube is a new type of one-dimensional nano carbon material, first discovered by Japanese researcher S. Iijima in 1991. The carbon nanotubes have excellent properties such as high tensile strength and high thermal stability, and the carbon nanotubes may exhibit metallic or semiconducting properties as the nanocarbon tube spirals. Since the carbon nanotubes have an ideal one-dimensional structure and excellent properties in the fields of mechanics, electricity, heat, etc., they have shown broad application prospects in the interdisciplinary fields such as materials science, chemistry, and physics. Therefore, the realization of the controllable growth of carbon nanotubes is the key to the application of nanocarbon tubes.
目前,較為常用之奈米碳管製備方法係化學氣相沈積法。化學氣相沈積法係利用含碳氣體作為碳源氣,於矽或沸石基底上生長出多壁或單壁奈米碳管。惟,如第一圖所示,傳統之熱CVD奈米碳管製備設備1包括一石英管17,該石英管17包括一進氣口13及一與該進氣口13相對設置之出氣口15。於奈米碳管之製備過程中,將一表面形成有催化劑層22之基底2裝載於所述石英管17內,反應氣體11由進氣口13水平方向吹送至出氣口15,即與奈米碳管之生長方向垂直。對於微細奈米碳管而言,即使該反應氣體之流速緩慢,其亦將使得最終生長出之奈米碳管準直性不佳。 At present, the more commonly used method for preparing carbon nanotubes is chemical vapor deposition. The chemical vapor deposition method uses a carbon-containing gas as a carbon source gas to grow a multi-wall or single-walled carbon nanotube on a crucible or zeolite substrate. However, as shown in the first figure, the conventional thermal CVD carbon nanotube preparation apparatus 1 includes a quartz tube 17 including an air inlet 13 and an air outlet 15 disposed opposite the air inlet 13 . During the preparation of the carbon nanotubes, a substrate 2 having a catalyst layer 22 formed on its surface is loaded into the quartz tube 17, and the reaction gas 11 is blown horizontally from the gas inlet 13 to the gas outlet 15, that is, with the nanometer. The growth direction of the carbon tube is vertical. For the fine carbon nanotubes, even if the flow rate of the reaction gas is slow, it will cause poor collimation of the finally grown carbon nanotubes.
有鑒於此,提供一種可生長準直性奈米碳管之製備設備實為必要。 In view of this, it is necessary to provide a preparation apparatus for growing a collimated carbon nanotube.
下面將以實施例說明一種奈米碳管製備設備,其可實現奈米碳管之準直性生長。 A carbon nanotube preparation apparatus which can realize collimated growth of a carbon nanotube can be explained by way of example.
一種奈米碳管製備設備,其包括一反應腔、一加熱裝置及一導流裝置。該反應腔包括一第一進氣口及一第一出氣口。該加熱裝置固定在所述反應腔的外壁,且該反應腔的外壁與外界空氣相接觸。該導流裝置位於該反應腔內,其包括一氣體輸送管、一第二進氣口及一第二出氣口,其中該氣體輸送管一端與所述第一進氣口密封套接,另一端與所述第二進氣口密封套接,該第二進氣口垂直於用於生長奈米碳管之基底設置,該第二出氣口位於該第二進氣口相對之一側,該第二出氣口與該第一出氣口連通。 A carbon nanotube preparation apparatus includes a reaction chamber, a heating device and a flow guiding device. The reaction chamber includes a first air inlet and a first air outlet. The heating device is fixed to an outer wall of the reaction chamber, and an outer wall of the reaction chamber is in contact with outside air. The flow guiding device is located in the reaction chamber, and includes a gas delivery tube, a second air inlet and a second air outlet, wherein one end of the gas delivery tube is sealed with the first air inlet, and the other end is Sealing with the second air inlet, the second air inlet is disposed perpendicular to a base for growing the carbon nanotube, and the second air outlet is located on a side opposite to the second air inlet, the first The two air outlets are in communication with the first air outlet.
相較於先前技術,所述奈米碳管製備設備,其藉由採用導流裝置改變奈米碳管生長所需之反應氣體流向,使該流向由傳統之垂直奈米碳管生長方向轉為平行於奈米碳管生長方向,該種設置可以使奈米碳管具有較佳之準直性。 Compared with the prior art, the carbon nanotube preparation apparatus converts the flow direction of the conventional vertical carbon nanotubes into a growth direction by using a flow guiding device to change the flow of the reaction gas required for the growth of the carbon nanotubes. Parallel to the growth direction of the carbon nanotubes, this arrangement can provide better collimation of the carbon nanotubes.
下面結合附圖將對本發明實施例作進一步之詳細說明。 The embodiments of the present invention will be further described in detail below with reference to the accompanying drawings.
參見第二圖,本發明第一實施例所提供之奈米碳管製備設備10,其包括一加熱裝置12,一反應腔20及一導流裝 置30,該導流裝置30設置於該反應腔20內。 Referring to the second figure, a carbon nanotube preparation apparatus 10 according to a first embodiment of the present invention includes a heating device 12, a reaction chamber 20 and a flow guiding device. At 30, the flow guiding device 30 is disposed in the reaction chamber 20.
該反應腔20包括一第一進氣口22及一第一出氣口24,該反應腔20可選用石英管。 The reaction chamber 20 includes a first air inlet 22 and a first air outlet 24, and the reaction chamber 20 can be a quartz tube.
該導流裝置30包括一氣體輸送管32、一第二進氣口34以及一第二出氣口36。本實施例中,該導流裝置30除氣體輸送管32外之部分呈無底面之槽體結構,其材質可選用導熱材料,如不鏽鋼。 The flow guiding device 30 includes a gas delivery pipe 32, a second air inlet 34, and a second air outlet 36. In this embodiment, the portion of the flow guiding device 30 except the gas delivery pipe 32 has a groove structure without a bottom surface, and the material thereof may be a heat conductive material such as stainless steel.
該氣體輸送管32一端與所述第一進氣口22密封套接,另一端與第二進氣口34密封套接。該氣體輸送管32可包括一彎折段,藉由該彎折段可使第一進氣口22與第二進氣口34處於基本垂直狀態。 One end of the gas delivery pipe 32 is sealed and sleeved with the first air inlet 22, and the other end is sealed with the second air inlet 34. The gas delivery tube 32 can include a bend section by which the first inlet port 22 and the second inlet port 34 can be in a substantially vertical state.
該第二進氣口34相對於生長奈米碳管之基底40垂直設置,本實施例中該第二進氣口34設置於基底40之上方部位並與基底基本垂直。 The second air inlet 34 is disposed perpendicular to the base 40 of the growth carbon nanotube. In the embodiment, the second air inlet 34 is disposed above the base 40 and substantially perpendicular to the base.
該第二出氣口36設置於導流裝置30之底部並與所述第一進氣口22基本平行之位置。該第二出氣口36亦可以設置於導流裝置30之底部並與所述第一進氣口22基本垂直之位置,只要使該第二出氣口36鄰近基底40之位置均可。 The second air outlet 36 is disposed at a bottom of the flow guiding device 30 and substantially parallel to the first air inlet 22 . The second air outlet 36 can also be disposed at the bottom of the flow guiding device 30 and substantially perpendicular to the first air inlet 22, as long as the second air outlet 36 is adjacent to the base 40.
下面結合奈米碳管之製備過程詳細說明本實施例所提供之奈米碳管製備設備10之使用方法。 The method of using the carbon nanotube preparation apparatus 10 provided in the present embodiment will be described in detail below in conjunction with the preparation process of the carbon nanotubes.
參見第二圖,先將一基底40放入反應腔20內,該基底40表面形成有一催化劑層50,設置好導流裝置20使其完全包圍該基底40。該基底40可選用石英、矽、氧化鎂等基 片。該催化劑層50可選用鈷、鎳、鐵,或其合金材料。由於該導流裝置30採用無底面之槽體結構,從而將第二出氣口36設置於導流裝置20底部並與第一進氣口22基本平行之位置。 Referring to the second figure, a substrate 40 is first placed in the reaction chamber 20, and a catalyst layer 50 is formed on the surface of the substrate 40, and the flow guiding device 20 is disposed to completely surround the substrate 40. The substrate 40 can be selected from quartz, germanium, magnesium oxide and the like. sheet. The catalyst layer 50 may be selected from cobalt, nickel, iron, or an alloy thereof. Since the flow guiding device 30 adopts a groove structure without a bottom surface, the second air outlet 36 is disposed at the bottom of the flow guiding device 20 and substantially parallel to the first air inlet 22.
然後,於常壓下從第一進氣口22通入載氣氣體,該載氣氣體藉由氣體輸送管32及第二進氣口34,從導流裝置30之頂部進入其內並垂直吹向基底40。該載氣氣體可選用氫氣、氮氣、氨氣或其他惰性氣體等。藉由加熱裝置12對反應腔20內之催化劑層50進行加熱。待催化劑層50之溫度升高至預定溫度後,一般為500度~900度,從第一進氣口22通入反應氣體。所述反應氣體可選用甲烷、乙烷、乙烯、乙炔等碳源氣。該反應氣體經氣體輸送管32及第二進氣口34進入導流裝置30內。由於催化劑之催化作用,通入到反應腔20之碳源氣熱分解成碳單元與氫氣,碳單元吸附於催化劑層50形成之催化劑顆粒表面,待催化劑顆粒中吸附之碳單元達到飽和後將析出從而可於催化劑顆粒位置生長出奈米碳管。而載氣氣體與反應後產生之廢氣可藉由第二出氣口36及與其連通之第一出氣口24排出。 Then, a carrier gas is introduced from the first intake port 22 under normal pressure, and the carrier gas gas enters the top of the flow guiding device 30 through the gas delivery pipe 32 and the second intake port 34 and blows vertically. To the substrate 40. The carrier gas may be selected from hydrogen, nitrogen, ammonia or other inert gases. The catalyst layer 50 in the reaction chamber 20 is heated by the heating device 12. After the temperature of the catalyst layer 50 is raised to a predetermined temperature, it is generally 500 to 900 degrees, and a reaction gas is introduced from the first gas inlet 22. The reaction gas may be selected from a carbon source gas such as methane, ethane, ethylene or acetylene. The reaction gas enters the flow guiding device 30 through the gas delivery pipe 32 and the second intake port 34. Due to the catalytic action of the catalyst, the carbon source gas introduced into the reaction chamber 20 is thermally decomposed into carbon units and hydrogen gas, and the carbon units are adsorbed on the surface of the catalyst particles formed by the catalyst layer 50, and the carbon units adsorbed in the catalyst particles are saturated after being precipitated. Thereby, a carbon nanotube can be grown at the position of the catalyst particles. The carrier gas and the exhaust gas generated after the reaction can be discharged through the second air outlet 36 and the first air outlet 24 communicating therewith.
如第三圖所示,本發明第二實施例中奈米碳管製備設備100包括一加熱裝置120、一反應腔200及一導流裝置300,其中該導流裝置300可選用具有底面之箱體結構。此時,該導流裝置300之氣體輸送管320之一端與第一進氣口220密封套接,另一端與第二進氣口340密封套接;該導流裝置300之第二進氣口340位於導流裝置300之頂部, 第二出氣口360可設置於該導流裝置300之底部與第一進氣口220基本垂直之位置,還可將第二出氣口360設置於該導流裝置300之底部與第一進氣口220基本平行之位置即相對於該第二進氣口340之位置,只要使該第二出氣口360鄰近基底400之位置均可。 As shown in the third figure, the carbon nanotube preparation apparatus 100 of the second embodiment of the present invention includes a heating device 120, a reaction chamber 200, and a flow guiding device 300, wherein the flow guiding device 300 can be selected from a box having a bottom surface. Body structure. At this time, one end of the gas delivery tube 320 of the flow guiding device 300 is sealed and sleeved with the first air inlet 220, and the other end is sealed with the second air inlet 340; the second air inlet of the flow guiding device 300 340 is located at the top of the flow guiding device 300, The second air outlet 360 can be disposed at a bottom of the flow guiding device 300 substantially perpendicular to the first air inlet 220, and the second air outlet 360 can be disposed at the bottom of the flow guiding device 300 and the first air inlet. The position of the substantially parallel position, that is, the position relative to the second air inlet 340, may be such that the second air outlet 360 is adjacent to the position of the base 400.
本發明第二實施例中,可將形成有催化劑層500之基底400直接放入導流裝置300內,並將其導流裝置300放入反應腔200內即可。亦可附加一承載裝置600,用於支撐基底400,並調整該基底400與第二進氣口340之間之距離。而製備奈米碳管之其他步驟則與第一實施例相同。 In the second embodiment of the present invention, the substrate 400 on which the catalyst layer 500 is formed can be directly placed in the flow guiding device 300, and the flow guiding device 300 can be placed in the reaction chamber 200. A carrier device 600 can also be attached for supporting the substrate 400 and adjusting the distance between the substrate 400 and the second air inlet 340. The other steps for preparing the carbon nanotubes are the same as in the first embodiment.
本發明實施例所提供之奈米碳管製備設備,其藉由導流裝置改變奈米碳管生長用反應氣體之流向,使其與奈米碳管之生長方向基本平行,進而可實現準直性奈米碳管之製備。 The carbon nanotube preparation device provided by the embodiment of the invention changes the flow direction of the reaction gas for carbon nanotube growth by the flow guiding device, so as to be substantially parallel with the growth direction of the carbon nanotube, thereby realizing collimation Preparation of carbon nanotubes.
另外,本領域技術人員還可在本發明精神內做其他變化,如適當變化導流裝置之形狀及設置位置,或改變導流裝置之進氣口及出氣口之設置位置,只要其不偏離本發明之實施效果即可。 In addition, those skilled in the art can also make other changes within the spirit of the present invention, such as appropriately changing the shape and setting position of the flow guiding device, or changing the setting positions of the air inlet and the air outlet of the flow guiding device as long as they do not deviate from the present position. The effect of the invention can be achieved.
綜上所述,本發明確已符合發明專利要件,爰依法提出專利申請。惟,以上所述者僅為本發明之較佳實施例,舉凡熟悉本案技藝之人士,於援依本案發明精神所作之等效修飾或變化,皆應包含於以下之申請專利範圍內。 In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. The above description is only the preferred embodiment of the present invention, and equivalent modifications or variations made by those skilled in the art of the present invention should be included in the following claims.
10、100‧‧‧奈米碳管製備設備 10,100‧‧‧Nano carbon tube preparation equipment
12、120‧‧‧加熱裝置 12, 120‧‧‧ heating device
20、200‧‧‧反應腔 20,200‧‧‧reaction chamber
22、220‧‧‧第一進氣口 22, 220‧‧‧ first air inlet
24、240‧‧‧第一出氣口 24, 240‧‧‧ first air outlet
30、300‧‧‧導流裝置 30, 300‧‧‧ flow guiding device
32、320‧‧‧氣體輸送管 32, 320‧‧‧ gas delivery tube
34、340‧‧‧第二進氣口 34, 340‧‧‧ second air inlet
36、360‧‧‧第二出氣口 36, 360‧‧‧ second air outlet
40、400‧‧‧基底 40,400‧‧‧Base
50、500‧‧‧催化劑層 50, 500‧‧‧ catalyst layer
600‧‧‧承載裝置 600‧‧‧ Carrying device
第一圖係先前技術中之奈米碳管製備設備之結構示意圖 。 The first figure is a schematic diagram of the structure of a carbon nanotube preparation device in the prior art. .
第二圖係本發明第一實施例之奈米碳管製備設備之結構示意圖。 The second drawing is a schematic structural view of a carbon nanotube preparation apparatus according to a first embodiment of the present invention.
第三圖係本發明第二實施例之奈米碳管製備設備之結構示意圖。 The third drawing is a schematic structural view of a carbon nanotube preparation apparatus according to a second embodiment of the present invention.
10‧‧‧奈米碳管製備設備 10‧‧‧Nano Carbon Tube Preparation Equipment
12‧‧‧加熱裝置 12‧‧‧ heating device
20‧‧‧反應腔 20‧‧‧Reaction chamber
22‧‧‧第一進氣口 22‧‧‧First air inlet
24‧‧‧第一出氣口 24‧‧‧First air outlet
30‧‧‧導流裝置 30‧‧‧ flow guiding device
32‧‧‧氣體輸送管 32‧‧‧ gas delivery tube
34‧‧‧第二進氣口 34‧‧‧Second air inlet
36‧‧‧第二出氣口 36‧‧‧Second air outlet
40‧‧‧基底 40‧‧‧Base
50‧‧‧催化劑層 50‧‧‧ catalyst layer
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US4123989A (en) * | 1977-09-12 | 1978-11-07 | Mobil Tyco Solar Energy Corp. | Manufacture of silicon on the inside of a tube |
TW200304956A (en) * | 2002-04-01 | 2003-10-16 | Ans Inc | Vapor organic material deposition method and vapor organic material deposition apparatus using the same |
WO2004095560A1 (en) * | 2003-04-18 | 2004-11-04 | Hitachi Kokusai Electric Inc. | Semiconductor producing device and semiconductor producing method |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US4123989A (en) * | 1977-09-12 | 1978-11-07 | Mobil Tyco Solar Energy Corp. | Manufacture of silicon on the inside of a tube |
TW200304956A (en) * | 2002-04-01 | 2003-10-16 | Ans Inc | Vapor organic material deposition method and vapor organic material deposition apparatus using the same |
WO2004095560A1 (en) * | 2003-04-18 | 2004-11-04 | Hitachi Kokusai Electric Inc. | Semiconductor producing device and semiconductor producing method |
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