WO2003083169A1

WO2003083169A1 - Apparatus and method for depositing organic matter of vapor phase

Info

Publication number: WO2003083169A1
Application number: PCT/KR2003/000605
Authority: WO
Inventors: Dong-Soo Kim; Kyung-Bin Bae; Dong-Kwon Choi
Original assignee: Ans Inc
Priority date: 2002-04-01
Filing date: 2003-03-27
Publication date: 2003-10-09
Also published as: JP2007146292A; JP2003293140A; TW200304956A; AU2003217530A1; JP3962349B2; CN1450610A; CN1218372C

Abstract

The present invention relates to a vapor organic material deposition method and a vapor organic material deposition apparatus using the same which are capable of fast growing a thin film uniformly on a wider substrate by spraying a vapor organic material in a gravity direction using a spraying unit installed in an upper side of the same and accurately and stably adjusting a thickness of a wider substrate of an organic thin film by using a diluting gas as a deposition material and continuously carrying a small size heat source to a scan head.

Description

APPARATUS AND METHOD FOR DEPOSITING ORGANIC MATTER

OF VAPOR PHASE

TECHNICAL FIELD

The present invention relates to a vapor organic material

deposition method and a vapor organic material deposition apparatus in a

fabrication apparatus of a semiconductor apparatus and a fabrication

method of the same, and in particular to a vapor organic material

deposition method and a vapor organic material deposition apparatus

using the same which are capable of fast growing a thin film uniformly on a

wider substrate by spraying a vapor organic material in a gravity direction

using a spraying unit installed in an upper side of the same and accurately

and stably adjusting a thickness of a wider substrate of an organic thin film

by using a diluting gas as a deposition material and continuously carrying

a small size heat source to a scan head.

BACKGROUND ART

Recently, a thin film formation technology by a functional high

molecular compound as an organic compound and an organic metallic

compound is concentrated on a conductive material, photoelectron

material, electro-luminescence device material, etc. including an insulation

layer material of a semiconductor memory. A vacuum deposition method used one of a representative

technology among the so far developed organic thin film formation

methods is implemented in such a manner that a heat evaporation source

is installed in a lower portion of a vacuum chamber, and a film growing

substrate is installed thereon for thereby forming a thin film. The schematic

construction of an organic thin film formation apparatus using a vacuum

deposition method will be described. There is provided a vacuum

ventilation unit connected with a vacuum chamber. Therefore, a certain

vacuum state is maintained in the vacuum chamber using the vacuum

ventilation unit. An organic material which is an organic thin film material is

evaporated from a heat evaporation source of more than at least one

organic thin film material disposed in a lower portion of a vacuum chamber.

A heat evaporation source of an organic thin film material is a cylindrical or

rectangular parallelepiped container. A film grown organic material is

provided in the container. There are quartz, ceramic, etc. as a container

material. A heating heater is wound on a surrounding surface of a

container unit in a certain pattern. When a certain power is applied, the

temperature of a surrounding portion of a container is increased and at the

same time the container is heated. When a certain temperature is reached,

an organic is evaporated. At this time, the temperature is measured by a

temperature adjusting heat conducting unit installed in a lower portion or in

an upper portion of the container. Therefore, it is possible to maintain an organic evaporation material to have a constant temperature for thereby

obtaining a desired evaporation rate. The evaporated organic material is

carried to a substrate formed of a glass or wafer material disposed far

from an upper side of a container by a certain distance. The thusly carried

organic material is hardened on the substrate through an absorption,

deposition, re-evaporation processes for thereby forming a thin film.

Here, in the organic compound of an organic thin film material,

since a vapor pressure is high, and a pyrolysis temperature by a heat is

close to an evaporation temperature, it is difficult to control an organic

evaporation rate stably for a long time, so that it is impossible to

implement a high rate thin film deposition. An organic thin film material

evaporated from a heat evaporation source in the vacuum chamber has a

certain orientation corresponding to a shape of a crucible hole of an upper

portion of a heat evaporation source container and is limited to a limited

range and reaches at a substrate, so that it is impossible to obtain a

uniform organic thin film formed on a wide area substrate. In addition, a

film is grown while a substrate is rotated at a certain rate using a

correction unit of a certain orientation for implementing a uniform thin film

formation of an organic thin film, so that a rotation radius is increased, and

a deposition apparatus is made larger. In addition, since an organic thin

film is formed in an unnecessary effective area of a vacuum apparatus, an

efficiency of use of an expensive organic material is decreased for thereby decreasing a productivity.

As described above, when a product is fabricated in application

with an electro-luminescence device and functional thin film using an

organic thin film in a vacuum deposition method, there are problems such

as a lower film growing rate, a lower organic material use efficiency, a non-

uniformity of an organic thin film, a difficulty for finely adjusting a mixing

amount of a host material and a dopant material, and a difficulty for

forming a uniform organic thin film based on a larger substrate. As an

example of the above problems, the conventional vacuum deposition

apparatus will be described with reference to Figure 1.

Figure 1 is a view illustrating an example of a conventional

vacuum deposition apparatus.

As shown therein, in a conventional vacuum deposition apparatus,

a certain material deposited on a molybdenum boat 6 is prepared by a

certain amount, and an inner pressure of a vacuum chamber 1 is

decreased to 10-6torr. In the case that a deposition material is metal, the

metal is increased near a melting point using a temperature adjusting

apparatus, and the temperature is finely adjusted and is increased until the

material is evaporated. At this time, the material on the molybdenum boat

6 starts to evaporate, a previously engaged shutter 5 is opened, and an

evaporated material molecular is deposited on the substrate. At this time,

a shutter 5 is adapted to prevent an impurity remaining before the material on the molybdenum boat 6 is evaporated from being deposited on the

substrate.

In the thusly constituted vacuum deposition apparatus, it is not

easy to predict an accurate amount of the depositing material. Therefore,

a large amount of the material must be prepared on the molybdenum boat

6. In addition, since it is impossible to induce vapor in a desired direction,

in the case that the above deposition processes are repeatedly performed,

the interior of the chamber may be polluted. Therefore, in this case, the

interior of the same should be cleaned for thereby causing an

inconvenience. Furthermore, the amount of the material prepared on the

molybdenum boat 6, the opening and closing time of the shutter 4, and the

evaporating time by the temperature adjustment are variables of the

thickness adjustment. It is impossible to finely adjust the above variables.

In addition, in the organic semiconductor fabrication method, there

are a method for using a unit deposition source, and an OVPD(Organic

Vapor Phase Deposition) method proposed by Max Shtein, et. al. in

Princeton university.

In the organic semiconductor fabrication method which uses a unit

deposition source tank, it takes a long time for depositing each layer used

in the organic semiconductor. The amount of the use of the material used

for the deposition of each layer is larger. In addition, there is a problem

that a density of a deposited film and an adhesive force with respect the substrate are bad. A fabrication yield for a mass production of an organic

semiconductor is decreased. There is a limit in a fabrication process of a

wider area substrate for a mass production. Namely, the limit size of the

area of the substrate is 370x470mm.

The OVPD method is directed to a method for fabricating each

layer used for an organic semiconductor using a carry gas for a vapor

organic material in an Axitron method proposed by Max Shtein, et. al. This

method is capable of more increasing an efficiency in use of an organic

material compared to a method adapted to use a unit deposition source. In

addition, it is possible to theoretically fabricate an organic semiconductor

of a wider area substrate. However, the method of Axitron which uses the

OVPD method uses a scan head of a conventional CVD method. In

addition, the substrate of 200x200mm is tested. In this case, a problem of

an organic thin film which is weak to heat may occur.

In addition, in order to fabricate for a wider area substrate, a

shower head of over 370x470mm must be prepared. However, in this case,

there is a problem in constructing the same. In the deposition method of

Axitron method, the high temperature heat sources of the deposition

source tank 714 and the scan head are fixed. In addition, in a doping in a

fabrication of an organic semiconductor, a separate temperature

adjustment is implemented by providing more than st least two scan heads

in the interior of the system. However, in the OVPD method, since one scan head is used, if the doping is performed using more than at least two

doping materials which have different thermal properties, the material may

be changed to a material having a bad thermal property. Namely, in the

conventional two methods, the organic semiconductor material is not well

deposited on a substrate of a wider area.

DISCLOSURE OF INVENTION

Accordingly, it is an object of the present invention to provide a

vapor organic material deposition method and a vapor organic material

deposition apparatus using the same which are capable of overcoming the

problems encountered in the conventional art.

It is an object of the present invention to provide a vapor organic

material deposition method of a wider area substrate and a vapor organic

material deposition apparatus using the same which are capable of

increasing an adhesive force with respect to a substrate of an organic thin

film and accurately and stable adjusting a thickness by diluting an organic

material particle in the interior of a deposition source tank in order for an

organic semiconductor material to be deposited on a substrate and

preventing a temperature increase on a wider area substrate by a heat

source of a scan head and in the interior of a deposition chamber using a

gate valve of a buffer chamber and a deposition chamber. To achieve the above objects, there is provided a vapor organic

material deposition apparatus which includes a deposition chamber which

has an inner space separated from the outside, a mother material

mounting portion formed in a bottom surface of the inner space for

mounting a mother material therein on which a vapor organic material is

deposited, a spraying unit which is positioned in an upper portion of the

mother material mounting portion and is adapted to spray a vapor organic

material in a direction of the mother material mounting portion, and more

than at least one warm keeping heater which radiates a heat to an upper

wall surface and side wall surface, more than at least one organic material

chamber which more than at least one carry gas inlet hole formed in a

hole shape through which a carry gas carrying a vapor organic material is

flown in, more than at least one vapor organic material outlet hole formed

in a hole shape through which an organic material vapor and carry gas are

discharged, a furnace which is formed of a heat-resisting material and has

an inner space for storing an organic material, and an organic material

heating heater which surrounds an outer surrounding portion of the

furnace and heats an inner portion of the furnace to a temperature at

which an organic material is evaporated, a flow amount controller which is

connected with the carry gas inlet hole and controls the amount and

flowing rate of the carry gas flown into the interior of the organic material

chamber, a vapor organic material carry pipe which is formed to pass through the deposition chamber and the organic material chamber and are

formed in a pipe shape, so that a vapor organic material in the organic

material chamber is carried to a spraying unit, and a vacuum pump which

is adapted to decrease an inner pressure of the deposition chamber.

To achieve the above objects, there is provided a vapor organic

mateπal deposition method which includes a first step in which a heating

heater contacting with an outer surface of an organic material chamber

including an organic material therein radiates heat and heats the organic

material to a temperature above an evaporation temperature, a second

step in which a vapor organic material evaporated by the heating heater is

moved to a spraying unit of the deposition chamber in which a mother

material on which a vapor organic material is deposited is positioned,

through a vapor organic material carry pipe surrounded by a fixed

temperature heater which radiates heat, and a third step in which a vapor

organic material carried to the spraying unit is sprayed in a gravity

direction from an upper portion of the mother material placed in an upper

portion of a mother material mounting portion, and is deposited on an

upper surface of the mother material.

To achieve the above objects, in a vapor organic material

deposition apparatus, there is provided a vapor organic material

deposition apparatus of a wider area substrate which includes a gas

heater which is adapted to heat an inert gas by adjusting a gas reservoir having an inert gas therein and a MFC(Mass Flow Controller), a heater

pipe wound on an outer portion of a connection pipe for maintaining a

temperature, at least one deposition source tank which stores a gas to be

deposited and an organic material and heats a high temperature gas and

organic material particle by a gas heater in a state that the same are

diluted for thereby generating a diluted organic material in a gaseous state,

a scan head and buffer chamber which have a deposition rate adjusting

unit adapted to check and adjust a movement of the diluted organic

material particle, a gate valve which is adapted to implement a gating

operation for thereby opening and closing a flow of the diluted organic

material particle, and a deposition chamber which is adapted to deposit

the diluted particle flown in from the deposition source tank on a wider

area substrate, wherein the gas heater heats a gas in order for the

deposition source tank adjusts the amount of gas and flows a heat source

into the same, and the gate valve is installed between the buffer chamber

and the deposition chamber for thereby preventing a temperature increase

in a wider area substrate by a heat source of the scan head and in the

interior of the deposition chamber.

To achieve the above objects, in a vapor organic material

deposition method there is provided a vapor organic material deposition

method of a wider area substrate which includes a first step in which an

inert gas which flows from a deposition source tank based on an adjustment of a gas reservoir which stores an inert gas therein and a

MFC(Mass Flow Controller) is heated using a gas heater based on an

adjustment of a gas mount, and heat source is inputted into the interior, a

step in which a temperature is maintained by a heater pipe wound on an

outer portion of a connection pipe, a step in which at least one deposition

source tank in which a gas to be deposited and an organic material are

stored is heated by a gas heater in a state that a high temperature gas

and an organic material particle are diluted, and a diluted organic material

is obtained in a gaseous state, a step in which a flow of the diluted organic

material particle is checked and adjusted, and a gating operation is

performed with respect to a scan head and buffer chamber attached with a

deposition rate adjusting unit and for opening and closing a flow of a

diluted organic material particle, a step in which a diluted particle flown in

from the gate valve and the deposition source tank is deposited on a wider

area substrate in the deposition chamber, a step in which the gate valve is

installed between the buffer chamber and the deposition chamber and a

temperature increase is prevented in a wider area substrate by a head

source of the scan head and in the interior of a deposition chamber, and a

step in which an organic material which is separated when the scan head

is moved in the buffer chamber is collected by an assistant furnace

installed for a re-circulation of the organic material.

To achieve the above objects, in a fabrication method of an organic semiconductor apparatus, there is provided a vapor organic

material deposition method of a wider area substrate which includes a

step(S710) in which a substrate is loaded into a deposition chamber in a

deposition apparatus, a step(S712) in which a deposition source tank is

pre-heated and a high temperature gas is flown in at a temperature of

200°C - 600°C, a step(S714) in which a high temperature gas and an

organic material particle are mixed in the interior of the deposition source

tank for thereby forming a mixture, and is heated for thereby generating a

SGHP(Solid-Gas Heterogeneous Phase) material, a step(S716) in which a

large amount of vapor organic material SGHP are carried from the

deposition source tank to the buffer chamber through the connection pipe,

a step(S718) in which the flowing amount of the vapor organic material is

measured using a vapor organic material sensor in the buffer chamber,

and when the flowing amount of the vapor organic material reaches at a

certain set amount, the buffer gate valve is opened, a step(S720) in which

a vapor organic material is deposited based on a scan head operation, a

step(S722) in which after a set deposition time is passes, the scan head is

moved, and a step(S724) in which the buffer gate valve is closed, and the

substrate is unloaded.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which like reference numerals denote like parts, and in which:

Figure 1 is a view illustrating an example of a conventional vacuum

deposition apparatus;

Figure 2A is a plan view illustrating a vapor organic material

deposition apparatus according to the present invention;

Figure 2B is a cross sectional view taken along line A-A of Figure

2A;

Figure 2C is a plan view taken along line B-B of Figure 2A;

Figure 2D is a view illustrating an organic material chamber of a

portion C of Figure 2B;

Figure 3A is a cross sectional view illustrating a state that a

spraying unit is moved and sprays a vapor organic material according to

the present invention;

Figure 3B is a cross sectional view illustrating a state that a mother

material mounting unit having a mother material thereon is moved in a

horizontal direction based on a carrying method using an electric magnet

when a spraying unit sprays a vapor organic material according to the

present invention;

Figure 3C is a cross sectional view illustrating a state that a mother

material is deposited on a mother material using a spraying tube according to the present invention;

Figure 3D is a cross sectional view illustrating a state that a vapor

organic material is deposited on a mother material as a spraying tube is

rotated and moved upwardly and downwardly according to the present

invention;

Figure 4A is a cross sectional view illustrating a state that a vapor

organic material and a carry gas are mixed in the interior of a furnace

according to the present invention;

Figure 4B is a cross sectional view illustrating a state that a vapor

organic material and a carry gas are mixed in the outside of a furnace

according to the present invention;

Figure 5A is a cross sectional view illustrating a rectangular

parallelepiped furnace which has a vapor organic material discharging

hole in an upper end portion according to the present invention;

Figure 5B is a cross sectional view illustrating a rectangular

parallelepiped furnace which has a plurality of vapor organic material

discharging holes in an upper end portion according to the present

invention;

Figure 5C is a cross sectional view illustrating a cylindrical furnace

which has a vapor organic material discharging hole in an upper end

portion according to the present invention;

Figure 5D is a cross sectional view illustrating a cylindrical furnace which has a plurality of vapor organic material discharging holes in an

upper end portion according to the present invention;

Figure 6 is a cross sectional view illustrating a fixed temperature

heater in an outer portion of a vapor organic material carry pipe according

to the present invention;

Figure 7 is a cross sectional view illustrating a vapor organic

material deposition apparatus of a wider area substrate according to the

present invention;

Figure 8 is a cross sectional view illustrating a plurality of deposition

source tanks and scan heads according to the present invention;

Figure 9 is a view for explaining an operation method of a scan

head in the interior of a deposition chamber, which is capable of carrying a

SGHP organic material according to the present invention;

Figure 10 is a view for explaining a moving method of a scan head

capable of carrying a SGHP organic material in the interior of a system of

Figure 8 according to the present invention;

Figure 11 is a view for explaining a vapor organic material

generation method of an organic semiconductor apparatus according to

the present invention;

Figure 12 is a view for explaining a deposition method in the interior

of a deposition chamber based on a vapor organic material generated

based on the method of Figure 11 according to the present invention; Figure 13 is a floe chart of an operation of a deposition apparatus

according to the present invention;

Figure 14 is a relative relationship graph of a temperature of a gas

diluted and a deposition amount according to the present invention;

Figure 15 is a graph of a vapor organic material with respect to the

amount of a diluting gas according to the present invention; and

Figure 16 is a graph of a relationship of a deposition source tank

temperature and a deposition amount in the case that only a deposition

source tank is heated without a diluting gas according to the present

invention.

Description of reference numerals of major elements of the drawings

10: mother material 20: organic material

100: deposition chamber 110: spraying unit

112: guide plate 120: guide rail

122: guide rail support plate 130: warm keeping heater

140: mother material mounting. unit 150: vacuum pump

200: organic material chamber 210: vapor organic material carry pipe

220: furnace 230: organic material heater

240: carry gas inlet pipe 300: assistant chamber

310: moving shaft 312: moving block

314: carry unit 320: sealing flange 322: bellows 700: deposition chamber

701 : gas reservoir 702: MFC(Mass Flow Controller)

703: gas heater 706:heater pipe

707: connection pipe 709: scan head

710: buffer chamber 711 : gate valve

712: substrate 713: deposition chamber

714: deposition source tank 715: deposition rate adjusting unit

BEST MODE FOR CARRYING OUT THE INVENTION

<First embodiment

Figure 2A is a plan view illustrating a vapor organic material

deposition apparatus according to the present invention.

The vapor organic material deposition apparatus according to the

present invention includes a deposition chamber according to a first

embodiment of the present invention, an organic material chamber for

heating an organic material and changing to a vapor state, and an

assistant chamber which includes a driving apparatus for driving an

operation of a spraying unit which sprays a vapor organic material and an

organic material chamber.

A deposition chamber 100 according to a first embodiment of the

present invention includes an inner space which is separated from an outside and has a structure so that a mother material 10 on which a vapor

organic material is deposited , is mounted in a bottom surface of the inner

space. In addition, the deposition chamber 100 includes a spraying unit

110 which is positioned in an upper portion of the mother material 10 and

is adapted to spray a vapor organic material to an upper surface of the

mother material 10, a guide rail 120 which is engaged with the spraying

unit 110 and is longitudinally extended to be slidably engaged with a guide

plate(not shown) adapted to guide a sliding movement of the spraying unit

110, a guide rail support plate 122 which is adapted to fixedly support the

guide rail 120, and more than at least one warm keeping heater 130

adapted to maintain the temperature of the interior of the deposition

chamber 100 at a certain degree by radiating heat to the outside.

The organic chamber 200 is constructed in such a manner that an

organic material is evaporated by applying heat to an organic material

stored in the interior and is formed in a pipe shape and is connected with a

vapor organic material carry pipe 210 connected with the spraying unit 110

through the deposition chamber 100 for thereby carrying a vapor organic

material to the spraying unit 110.

The assistant chamber 300 includes a moving shaft 130 which is

engaged with the spraying unit 110 in a direction parallel with the guide rail

120 through the deposition chamber 100 in order for the spraying unit 100

is moved along the guide rail 120, a moving block 312 which is engaged with the moving shaft 130 and is moved in a direction parallel with the

guide rail 120 based on an engagement with the carry unit 314, and a

sealing flange 320, a bellows 322 and an organic material chamber 200

which are positioned in a portion in which the vapor organic material carry

pipe 210 and the moving shaft 130 pass through the deposition chamber

100 and are directed to buffering a vacuum difference between a high

vacuum state of the deposition chamber and a low vacuum chamber or

standby state of an assistant chamber 300 and to separating the same for

thereby connecting above two chambers.

Figure 2B is a cross sectional view taken along line A-A of Figure

2A according to the present invention.

As shown therein, a warm keeping heater 130 is installed in the

interior of the deposition chamber 100 for constantly maintaining an inner

temperature of the deposition chamber 100 in an upper and side surface

therein. A mother material mounting portion 140 is provided in the bottom

surface of the deposition chamber 100 for mounting the mother material

10 on which an organic material is deposited. A spraying unit 110 is

provided in an upper portion of the mother material mounting unit 140 for

spraying a vapor organic material. In addition, a vacuum pump 150 is

provided in a lower outer surface of the deposition chamber 100 for

making the interior of the deposition chamber 100 a high vacuum state.

An organic material chamber 200 is provided in an inner lower portion of the assistant chamber 300 for evaporating an organic material.

A vapor organic material carry pipe 210 is connected to an upper portion

of the organic material chamber 200 for carrying a vapor organic material

from the organic material chamber 200 to the spraying unit 110. A carry

unit 314 is provided between the organic material chamber 200 and the

vapor organic material carry pipe 210 for controlling the movement of the

spraying unit 110. In addition, the assistant chamber 300 is adapted to

input an inert gas into the interior of the organic material chamber 200,

and a flow amount controller is provided in the outer portion of the same

for thereby controlling the amount of the input of the inert gas. The inert

gas inputted into the organic material chamber 200 plays a role of a

moving medium of the vapor organic material. Therefore, it is possible to

finely control the amount of carry of the vapor organic material, and it is

possible to uniformly distribute the vapor organic material.

Figure 2C is a cross sectional view taken along line B-B of Figure

2A according to the present invention.

As shown therein, the guide plate 112 engaged with the spraying

unit 110 is slidably engaged with the guide rail 120 adapted to guide the

moving direction of the spraying unit 110. The mother material mounting

unit 140 adapted to mount the mother material 10 therein includes an

electric magnet moving apparatus using an electric magnet 142 for

thereby implementing a fine movement in the horizontal direction. The electric magnet moving apparatus adapted to the mother

material mounting unit 140 may be implemented based on the technology

of the patent "A deposition apparatus for fabricating an electro-luminance

device using an electric magnet and a deposition method using the

same(Patent application No. 10-2001-0077739). The same is not limited

thereby. In addition, a conventional moving apparatus may be adapted

instead of using the electric magnet moving apparatus.

It is possible to more accurately arrange the positions of the

spraying unit 110 and the mother material 10 in such a manner that the

position of the spraying unit 110 is adjusted based on the guide rail 120,

and the position of the mother material mounting unit 140 is adjusted using

an electric magnet moving apparatus, so that it is possible to implement

an accurate and effective organic material spraying operation thereby.

Figure 2D is a view illustrating an organic material chamber of the

portion C of Figure 2B according to the present invention.

The organic material chamber 200 is formed of a heat-resisting

material in a sealed shape having an inner space for storing an organic

material therein and includes a furnace 220 which has a carry gas inlet

hole 222 formed in a hole shape in order for a carry gas adapted to carry a

vapor organic material to be flown in and a vapor organic material inlet

hole 224 formed in a hole shape in order for an organic material vapor and

carry gas to be flown out, and an organic material heating heater 230 which surrounds an outer portion of the furnace 220 and is adapted to

heat the interior of the organic material chamber to a temperature at which

the organic material is evaporated.

The inlet pipe 240 which is formed in a pipe shape and is

connected with a flow amount controller 400 of Figure 2B is connected

with the carry gas inlet hole 222 formed in the furnace 220 through the

organic material chamber 200, so that an inert gas inputted from the flow

amount controller 400 is flown into the interior of the furnace 220.

In addition, the vapor organic material carry pipe 210 which is

formed in a pipe shape and is connected with the spraying unit 110 of

Figure 2B is connected with the carry gas outlet hole 224 formed in the

furnace 220 through the organic material chamber 200, so that the organic

material which is heated and evaporated by the organic material heating

heater 230 is carried to the spraying unit 110 adapted to spray a vapor

organic material to the mother material.

Figure 3 is a view illustrating various operation types of a vapor

organic material deposition apparatus according to the present invention.

Figure 3A is a view illustrating a state that a spraying unit of a

shower head shape is moved and sprays a vapor organic material

according to the present invention.

The spraying unit adapted to spray a vapor organic material 22

may be fabricated to have various shapes of a spraying port through which the vapor organic material 22 is sprayed for thereby uniformly spraying the

vapor organic material 22. Figure 3A is a view illustrating a state that a

deposition operation is performed using a shower head shaped spraying

unit having a plurality of spraying ports(not shown) each having a smaller

diameter.

In the case that the spraying unit is fixed to a certain position for

thereby spraying a vapor organic material, there is a problem that the

vapor organic material is not uniformly sprayed onto the mother material.

As shown in Figure 3A, the spraying unit 110 adapted to spray the vapor

organic material 22 to the upper surface of the mother material 10 is

horizontally moved along the guide rail and sprays the vapor organic

material 22, so that the vapor organic material 22 is uniformly deposited

on the entire surfaces of the mother material 10. At this time, in the case

that the vapor organic material 22 deposited on the mother material 10 is

more than at least two kinds, there is provided a mixing tank 250 in the

vapor organic material carry pipe 210 for uniformly mixing the different

kinds of the vapor organic materials before the vapor organic material is

carried to the spraying unit 110. In addition, the mixing tank 250 includes

more than at least one partition in the interior of the same for uniformly

mixing more than at least two vapor organic materials while the same is

flown into the interior of the mixing tank 250 and is flown to the outside of

the mixing tank 250. Figure 3B is a view illustrating a state that a mother material

mounting unit with a mother material is horizontally moved based on a

carrying method using an electric magnet when a spraying unit which is

formed in a shower head shape sprays a vapor spraying material.

On the contrary to the operation that the spraying unit 110 is

horizontally moved when the spraying unit 110 sprays a vapor organic

material 22 as shown in Figure 2A, when the mother material mounting

unit 140 with the mother material 10 is horizontally moved when the

spraying unit 110 sprays a vapor organic material 22 as shown in Figure

3B, it is possible to obtain the same effect as the effect of Figure 2A in

which the vapor organic material 22 is uniformly deposited on the upper

surface of the mother material 10. In addition, differently from the

operation that the spraying unit 110 is moved by the guide rail as shown in

Figure 3A, the method in which the mother material mounting unit 140 is

horizontally moved when the spraying unit 110 sprays a vapor organic

material 22 uses a carrying method using an electric magnet, so that it is

possible to accurately control the movement of the mother material

mounting unit 140.

Figure 3C is a view illustrating a state that a vapor organic material

is deposited on a mother material using a spraying tube according to the

present invention.

As shown therein, in a deposition apparatus using a spraying tube, a vapor organic material 22 which is carried into the interior of the

deposition chamber 100 through a mixing tank 250 adapted to uniformly

mix more than at least two vapor organic materials is formed of quartz,

ceramic or metallic material and is formed in a structure in such a manner

that the thusly formed organic materials are deposited on an upper surface

of the mother material 10 through the spraying tube 112 which has a

diameter of 3~20mm. The vapor organic material deposition apparatus

using the spraying tube 112 is capable of forming a flat organic thin film at

a high rate.

Figure 3D is a view illustrating a state that a vapor organic material

is deposited on a mother material as the spraying tube is rotated and

moved upwardly and downwardly according to the present invention.

As shown in Figure 3C, the deposition apparatus includes a

rotation motor 114 installed in an upper portion of the deposition chamber

100 and adapted to rotate the spraying tube 112, and a vertical moving

motor 116 adapted to vertically moving the spraying tube 112. In the above

construction, the spraying tube 112 is rotated and is moved upwardly and

downwardly and at the same time sprays a vapor organic material 22 on

an upper surface of the mother material 10. In addition, the spraying tube

112 may have a step shaped bent portion in such a manner that an end

portion of the spraying tube 112 through which a vapor organic material 22

is sprayed, moves in a circular shape when the same is rotated by the rotation motor 114.

In this embodiment, since it is possible to freely adjust the position

of the spraying tube 112 by the rotation motor 114 and the vertical moving

motor 116, the deposition apparatus of Figure 3C is possible to uniformly

spraying a vapor organic material.

Figure 4 is a view illustrating a process that a carry gas is mixed

with a vapor organic material which is obtained by heating an organic

material.

Figure 4A is a view illustrating a state that a vapor organic material

and a carry gas are mixed in the interior of a furnace according to the

present invention.

As shown in Figure 4A, the organic material 20 heated and

evaporated by the organic material heating heater 230 is mixed with a

carry gas flown in along the inlet pipe 240 connected with the interior of

the furnace 220 in the interior of the furnace 220. When the vapor organic

material and the carry as are mixed in a such a manner of Figure 4a, since

the organic material is evaporated and at the same time is mixed with a

carry gas, it is possible to implement an easier mixing and uniform mixing

operation.

Figure 4B is a view illustrating a state that a vapor organic material

and a carry gas are mixed in the outside of a furnace according to the

present invention. As shown therein, the mixing apparatus is constituted in such a

manner that a carry gas inlet pipe 240 is connected with a vapor organic

material carry pipe 210 positioned in the outside of the vapor organic

material chamber 200. The vapor organic material 20 which is heated and

evaporated by the vapor organic material heating heater 230 is carried

along the vapor organic material carry pipe 210 and is mixed with a carry

gas flown in through the carry gas inlet pipe 240 connected with the vapor

organic material carry pipe 210. Since the thusly constituted mixing

apparatus does not have an additional structure for engaging the carry gas

inlet pipe 240 to the furnace 220 and the organic material chamber 200, it

is possible to implement an easier fabrication of the system.

Figure 5 is a view illustrating various constructions of a furnace

and a vapor organic material outlet hole according to the present invention.

Figure 5A is a view illustrating the construction of a furnace which

is formed in a rectangular parallelepiped shape and has one vapor organic

material outlet hole in an upper portion of the same according to the

present invention.

As shown therein, the outer surfaces of the rectangular

parallelepiped shape furnace 220 are surrounded by the organic material

heating heater 230 adapted to heat the organic material in the interior of

the furnace 220, and a vapor organic material outlet hole 222 is provided

in an upper portion of the same for thereby discharging a vapor organic material.

Figure 5B is a view illustrating the construction of a furnace which

is formed in a rectangular parallelepiped shape and has a plurality of

vapor organic material outlet holes in an upper portion of the same.

A large amount of the vapor organic material must be discharged

for a high rate film growth in which a vapor organic material is deposited

on a mother material at a high rate. Namely, there is a problem that it is

impossible to discharge a large amount of vapor organic material by

providing only one vapor organic material outlet hole 222 in the upper

portion of the furnace 220. In order to overcome the above problem, as

shown in Figure 5B, there are provided a plurality of vapor organic

material outlet holes 222 in an upper portion of the furnace 220.

Figure 5C is a view illustrating the construction of a furnace which

is formed in a cylindrical shape and has one vapor organic material outlet

hole in an upper portion of the same.

In order to more effectively evaporate the organic material in the

interior of the furnace 220, the furnace 220 may be fabricated in various

shapes. In the case that the furnace 220 is formed in a rectangular

parallelepiped shape, since the heat generated in the organic material

heating heater 230 surrounding the furnace 220 is not uniformly

transferred to the outer surfaces of the furnace 220, a lot of heat loss

occurs. Therefore, it is impossible to accurately adjust the amount of the vapor organic material generated. As shown in Figure 5C, the furnace 220

is formed in a cylindrical shape, so that the heat generated in the organic

material heating heater 230 is uniformly transferred to the outer surfaces

of the furnace 220. Therefore, it is possible to effectively use the heat

generated in the organic material heating heater 230 by changing the

construction of the furnace 220 and to easily adjust the amount of the

generation of the vapor organic material. In addition, the furnace 220 is not

limited to the rectangular parallelepiped and cylindrical shapes. Namely,

the furnace 220 may be formed in a polygonal hexahedron and spherical

shape.

Figure 5D is a view illustrating the construction of the furnace

which is formed in a cylindrical shape and has a plurality of vapor organic

material outlet holes in an upper portion of the same.

In order to discharge a large amount of the vapor organic material

from the cylindrical furnace 220 as shown in Figure 5C, there may be

provided a plurality of vapor organic material outlet holes in the upper

surface of the furnace 220 in the same manner as Figure 5B.

Figure 6 is a view illustrating the construction that a fixed

temperature heater is provided in the outside of the vapor organic material

carry pipe according to the present invention.

When the vapor organic material from the furnace 220 is carried

through the vapor organic material carry pipe 210, when the vapor organic material carry pipe 210 is contacted with an external air and is cooled, the

vapor organic material flowing in the interior of the vapor organic material

carry pipe 210 is also cooled. In this case, when the vapor organic

material is cooled to a certain temperature below a proper temperature,

the deposition on the mother material becomes bad. As shown in Figure 6,

in order to overcome the above problem, a fixed temperature heater 260

having a heating wire 262 adapted to generate heat and accurately

maintain and adjust the heating temperature is provided in the outer

portion of the vapor organic material carry pipe 210.

In addition, the fixed temperature heater 260 may be provided in

the organic material chamber 220 for thereby constantly maintaining the

temperature of the organic material chamber 200.

<Second embodiment

A fabrication apparatus of an organic semiconductor apparatus

and a fabrication method of the same which may use a wider area

substrate used when an organic semiconductor is fabricated according to

a second embodiment of the present invention will be described with

reference to Figure 7.

In the organic semiconductor system of Figure 7, the vapor

organic material deposition apparatus 700 of the wider area substrate of

the second embodiment of the present invention includes a gas reservoir 701 adapted to reserve an inert gas therein, a gas heater 703 which is

installed between the gas reservoir 701 and a MFC(Mass Flow Controller)

702 and is adapted to heat the inert gas, a connection pipe 707 installed in

the interior of the heater pipe 706, at least one deposition source tank 714,

a deposition source tank 714 which includes a gas deposited and an

organic material therein, a scan head 709 which has a deposition rate

adjusting unit 715 for checking and adjusting the flow of the deposition gas,

a buffer chamber 711 , a gate valve 711 adapted to gate the flow of the

deposition gas and open and close the same, and a deposition chamber

713 adapted to deposit a gas flown in from at least one deposition source

tank 714 on a wider area substrate 712.

As shown in Figure 7, the gas reservoir 701 may store an inert gas

such s Ar, He, N2, etc. and oxygen and all kinds of gases used in a

conventional CVD and which is not explosive. The amount of the gas is

adjusted, and the gas is flown into the interior of the heat deposition

source tank 714 through the MFC 702. The thusly flown-in gas is heated

to a high temperature of 200~600°C using the gas heater 703 and is flown

into the interior of the heat source.

In the present invention, a state that an organic material particle

and a high temperature gas co-exist, namely, a non-uniform state of a

solid and gas is assumed as a solid-gas heterogeneous phase(SGHP),

and a material of a diluted state is assumed as a material of the SGHP. In addition, the organic material in the interior of the deposition source tank

714, for example, the organic material is diluted with a certain material

such as Alq3 and exists in the interior of the deposition source tank 714.

The material of the inert SGHP is heated by a heat source in the

deposition source tank 714, and the SGHP in the interior of the deposition

source tank 714 is heated by a convention current effect for thereby

generating a large amount of the organic material gas phase. In addition,

the SGHP material of the organic semiconductor is inputted into the

interior of the deposition chamber 713 using a pressure difference

between the deposition chamber 713 and the deposition source tank 714

through a connection pipe 707 of the organic semiconductor deposition

chamber 713. In the above process, the connection pipe 707 is heated to

a high temperature for preventing the vapor organic material from being

accumulated in the interior of the connection pipe 707. In particular, when

using Alq3, it is preferably heated to 320°C. In the above heating process,

in order to prevent a heat loss of the connection pipe 707, a double pipe is

formed for thereby constantly maintaining the temperature gradient. In

addition, the vacuum state is maintained in the connection pipe 707 for

thereby maintaining a temperature of the connection pipe 707. In addition,

in the downward type method, since the shadow effect by the mask may

be eliminated by adapting the deposition source tank capable of storing a

large amount of materials, the thick shadow mask may be used. Namely, it is possible to implement a long time process by decreasing the alignment

error of the aligning portions of the shadow mask.

The vapor organic material inputted into the scan head 709

through the connection pipe 707 is deposited on the upper portion of the

substrate 712. At this time, the inner portions of the scan head 709 are

heated using a resistance type heat source based on the same method as

the connection pipe 707 for preventing a vapor organic material deposition.

In addition, in the case that the deposition process is not performed in the

substrate in the scan head 709, the scan head 709 is moved to the buffer

chamber 710. In addition, the buffer chamber 710 and the deposition

chamber 713 are fully separated, so that a temperature increase is

prevented in the substrate in which the heat source of the scan head 709

is wider and in the interior of the deposition chamber 713.

When the scan head 709 is positioned in the buffer chamber 710,

the amount of the vapor organic material sprayed from the scan head 709

is adjusted and stabilized using a crystal sensor 715 of the monitor in the

interior of the buffer chamber 710. Actually, a thickness measuring system

does not exist in the interior of the deposition chamber. The adjustment of

the thickness in the process is performed based on a process time.

Figure 8 is a view illustrating a plurality of deposition source tanks

and scan heads capable of effectively processing a SGHP organic

material in the interior of the system of Figure 7. As shown therein, first, second and third deposition source tanks

741 , 742 and 743 supply a large amount of the organic material through

the first, second and third connection pipes 771 , 772 and 773 connected

with the tanks and the first, second and third scan heads 791 , 792 and 793.

In addition, in the buffer chamber, there is provided an assistant furnace

745 in such a manner that as the scan head is moved, the organic

material is collected and re-circulated,.

Figure 9 is a view of an operation method of a scan head in the

deposition chamber capable of carrying a SGHP organic material

according to the present invention.

As shown therein, in the deposition method using the scan head

709 according to the present invention, the vapor organic material itself is

performed based on a laminar flow pumping operation by the HIVAC pump

714 and is moved in the directions indicated by arrows of L, L', L" and L'".

Therefore, the deposition is performed based on the opening and closing

operation of the gate valve 71. Since the pumping port 732 is provided in a

lower portion of the substrate, the flow of the vapor organic material is

stably implemented, so that it is possible to implement a uniform thickness

of the organic material thin film deposited on a wider area substrate.

Therefore, since there is not any loss in the deposition in the directions of

arrows of L, L', L" and L'", it is possible to significantly increase the

efficiency of the material. Figure 1-0 is a view of a moving method of a scan head capable of

carrying a SGHP organic material of the interior of Figure 8. The

movement of the longitudinal direction of the scam head 709 in the

deposition process of Figure 10 is implemented in such a manner that the

piston rod 718 reciprocates between P through P' at a constant speed

using the motor 717. The length of the scan head 719 and the moving

length of the longitudinal direction of the scan head 709 using the motor

717 are determined based on the size of the substrate. In addition, the

scan head adjusts the amount of the generation of the vapor organic

material by a flow rate adjusting unit 716.

Figure 11 is a view for explaining a vapor organic material

generation method of an organic semiconductor apparatus according to

the present invention.

As shown therein, there are provided a deposition source tank 714,

an external heat source heater 701 , an organic material particle 752 in a

deposition source tank 714, a high temperature gas 753 in the interior of

the deposition source tank 714, an organic material stored in the interior of

the deposition source tank 714 and a gas inputting pipe 755. In the vapor

organic material generation method of a semiconductor apparatus

according to the present invention, when a vapor organic material is

generated, since the heat conductivity of the materials used in the organic

semiconductor are low, when a common cell type heat source is used, an evaporation of an organic material is difficult, and since a heat is

concentrated on a certain portion, the organic materials in the deposition

source tank 714 may be deteriorated.

As shown in Figure 11, a high temperature gas is sprayed into the

deposition source tank 714 through the gas input pipe 755, and in the

organic material itself, the gas and organic material are diluted in the

interior of the deposition source tank 714. Therefore, the organic material

particle 752 and high temperature gas 753 coexist in the deposition source

tank 714. In addition, The temperature of the deposition source tank 714 is

increased using the heat source heater 751 in the outer portion of the

deposition source tank 714. A heat conduction is performed in the diluting

portion of the coexisting state in the heating portion based on a convection

current method for thereby generating a large amount of the organic

materials. In addition, it is possible to generate a large amount of the

vapor organic material at an external temperature of a heat source lower

compared to the conventional method.

Figure 12 is a view illustrating a deposition method in the interior

of the deposition chamber based on a vapor organic material generated in

Figure 11 according to the present invention. The deposition and carrying

method of the vapor organic material of Figure 12 will be described. As

described above, it is possible to generate a large amount of the vapor

organic material in the interior of the deposition source tank 714. Therefore, a difference between a vacuum pressure in the interior of the

deposition chamber 713 and the vacuum pressure of the interior of the

deposition source tank 714 is above 100 times. For example, if the

vacuum degree of the system is 10-4Torr and the pressure difference is

formed in such a manner that the pressure of the deposition source tank

714 is 10-1Torr, it is possible to induce the vapor organic material in the

deposition chamber in the interior of the deposition source tank 714. In

addition, the connection pipe is heated to a high temperature in order for

the vapor organic material not to be deposited. In the deposition chamber

of Figure 12, the scanning method including the scan head 761 and the

substrate 762 will be described. The vapor organic material induced by the

scanning method of Figure 12 is actually deposited on the substrate.

However, the vapor organic material is not deposited on a wider area

substrate at one time. As shown in Figure 12, the deposition process on a

wider area substrate is performed as the deposition is performed on a

certain region of the substrate, and the scan head 709 is moved at a

constant speed based on the movement of the scan head 709.

Figure 13 is a flow chart of an operation of a deposition apparatus.

In the deposition apparatus, the substrate 712 is loaded into the deposition

chamber 710(S710). The deposition source tank 714 is pre-heated, and a

high temperature gas of 200°C to 600°C is inputted into the deposition

source tank 714(S712). In addition, the high temperature of the interior of the deposition source tank 714 and the organic material particles are

mixed for thereby forming a certain mixture. When the temperature of the

deposition source tank 714 is increased, a SGHP material is

generated(S714). A large amount of the generated SGHP material is

carried from the deposition source tank 714 to the buffer chamber 710

through the connection pipe 707(S716). At this time, in the buffer chamber

710, the flow amount of the vapor organic material is measured using a

vapor organic material sensor. When the amount of the vapor organic

material reached at a set amount, the buffer gate valve is opened(S718).

The deposition process of the vapor organic material is performed based

on the operation of the scan head 709(S720). After the set deposition time

is passed, the scan head 709 is moved(S722), and the buffer gate valve

711 is closed, and the substrate is unloaded(S724).

The vapor organic material deposition apparatus and method of a

wider area substrate according to the present invention will be described

with respect to the results of the experiments.

According to the experiments using the apparatus of Figure 13,

the graphs of Figures 7, 10, 15 and 16 will be described based on the

conditions: Used material: Alq3, substrate size: 370x470mm, used gas:

Ar(340°C), deposition source tank temperature: 300°C, uniformity of

deposition source tank: ±5%.

Figure 14 is a relative relationship graph of a temperature of a gas diluted and a deposition amount according to the present invention, Figure

15 is a graph of a vapor organic material with respect to the amount of a

diluting gas according to the present invention, and Figure 16 is a graph of

a relationship of a deposition source tank temperature and a deposition

amount in the case that only a deposition source tank is heated without a

diluting gas according to the present invention.

As shown in Figure 14, it is checked that there is not any effect in

the temperature of the diluting gas with respect to the amount of the

deposition. As shown in Figure 15, as the amount of the diluting gas is

increased, the amount of the SGHP in the interior of the deposition source

tank 714 is increased, and the amount of the gaseous organic material is

increased by the heat of the deposition source tank 714, so that the

amount of the vapor organic material produced through the scan head 709

is increased. In addition, as shown in Figure 16, in the case that the

deposition source tank 714 itself is heated, it is checked that a small

amount of a gaseous organic material is generated.

In other words, as shown in Figures 13, 14, 15 and 16, in the case

that there is not a diluting gas, the amount of the SGHP of the interior of

the deposition source tank 714 is increased based on the input of the

diluting gas compared to the method of the conventional deposition source

tank 714 in which the amount of the generation of the vapor organic

material is small. In addition, it is checked that the SGHP generates a large amount of the vapor organic material in the interior of the deposition

source tank 714 based on the conventional current principle.

Therefore, since the buffer chamber 710 and the deposition

chamber 713 are fully separated using the gate valve 711 , it is possible to

prevent a temperature increase in the substrate in which the heat source

of the scan head 709 is wider, and in the interior of the deposition chamber

713. In addition, the adhesive force with respect to the substrate of the

organic thin film is increased, and it is possible to adjust the thickness to a

common thickness accurately and stably. It is possible to store a large

amount of the materials.

As described above, in the vapor organic material deposition

method and a vapor organic material deposition apparatus using the same

according to the present invention, it is possible to uniformly deposit a

vapor organic material on a wider area substrate and to fast grow a film. In

addition, it is possible to implement a fine adjustment of the mixing amount

of the organic material. In addition, since a vapor organic material is

sprayed on only a portion on which a vapor organic material is deposited,

it is possible to effectively deposit a vapor organic material. The organic

material may be saved in the present invention.

In addition, in the vapor organic material deposition method and a

vapor organic material deposition apparatus using the same according to

the present invention, it is possible to increase an adhesive force with respect to a substrate of an organic thin film by diluting an organic material

particle in the interior of the deposition source tank. In addition, it is

possible to prevent a temperature increase in a wider area substrate of a

heat source by a scan head and in the interior of the deposition chamber

by fully separating the buffer chamber and the deposition chamber using a

gate valve and continuously moving a heat source of a small side of the

scan head. In addition, in the present invention, since it is possible to

eliminate a shadow effect by a mask in a downward method by adapting a

deposition source tank which is capable of storing a large amount of

materials, it is possible to use a thick shadow mask. Namely, it is possible

to overcome a problem in an aligning portion of a shadow mask.

As the present invention may be embodied in several forms

without departing from the spirit or essential characteristics thereof, it

should also be understood that the above-described examples are not

limited by any of the details of the foregoing description, unless otherwise

specified, but rather should be construed broadly within its spirit and scope

as defined in the appended claims, and therefore all changes and

modifications that fall within the meets and bounds of the claims, or

equivalences of such meets and bounds are therefore intended to be

embraced by the appended claims.

Claims

What is claimed is:

1. A vapor organic material deposition apparatus, comprising:

a deposition chamber which has an inner space separated from

the outside, a mother material mounting portion formed in a bottom

surface of the inner space for mounting a mother material therein on which

a vapor organic material is deposited, a spraying unit which is positioned

in an upper portion of the mother material mounting portion and is adapted

to spray a vapor organic material in a direction of the mother material

mounting portion, and more than at least one warm keeping heater which

radiates a heat to an upper wall surface and side wall surface;

more than at least one organic material chamber which more than

at least one carry gas inlet hole formed in a hole shape through which a

carry gas carrying a vapor organic material is flown in, more than at least

one vapor organic material outlet hole formed in a hole shape through

which an organic material vapor and carry gas are discharged, a furnace

which is formed of a heat-resisting material and has an inner space for

storing an organic material, and an organic material heating heater which

surrounds an outer surrounding portion of the furnace and heats an inner

portion of the furnace to a temperature at which an organic material is

evaporated;

a flow amount controller which is connected with the carry gas inlt

hole and controls the amount and flowing rate of the carry gas flown into the interior of the organic material chamber;

a vapor organic material carry pipe which is formed to pass

through the deposition chamber and the organic material chamber and are

formed in a pipe shape, so that a vapor organic material in the organic

material chamber is carried to a spraying unit; and

a vacuum pump which is adapted to decrease an inner pressure of

the deposition chamber.

2. The apparatus of claim 1 , wherein said deposition chamber

includes more than at least one guide rail in a longitudinal direction of the

vapor organic material carry pipe in a portion in which the spray unit is

engaged, and said spraying unit includes a guide plate which is engaged

to be slidable with the guide rail in a portion contacting with the guide rail.

3. The apparatus of either claim 1 or claim 2, wherein said deposition

chamber includes a rotation motor which rotates the spraying unit, and a

moving motor which is adapted to move the spraying unit in an upward

and downward direction.

4. The apparatus of claim 1, wherein said vapor organic material

carry pipe includes a fixed temperature heater which has a heat wire

adapted to generate heat and a fixed temperature heat radiating device system adapted to accurately maintain a heating temperature.

5. The apparatus of either claim 1 or claim 4, wherein said vapor

organic material carry pipe includes a mixing tank connected with more

than at least two organic material chamber for mixing more than at least

two vapor organic materials.

6. The apparatus of claim 1 , wherein said spraying unit is

implemented by a shower head having a plurality of spraying portions

each having a small diameter, through which a vapor organic material is

sprayed, or a spraying tube in which a spraying portion is formed in a pipe

shape.

7. The apparatus of claim 1 , wherein said furnace is formed in a

certain shape selected from the shapes of polygonal, cylindrical or

spherical shapes which are separated in their inner and outer sides.

8. A vapor organic material deposition method, comprising the steps

of:

a first step in which a heating heater contacting with an outer

surface of an organic material chamber including an organic material

therein radiates heat and heats the organic material to a temperature above an evaporation temperature;

a second step in which a vapor organic material evaporated by the

heating heater is moved to a spraying unit of the deposition chamber in

which a mother material on which a vapor organic material is deposited is

positioned, through a vapor organic material carry pipe surrounded by a

fixed temperature heater which radiates heat; and

a third step in which a vapor organic material carried to the

spraying unit is sprayed in a gravity direction from an upper portion of the

mother material placed in an upper portion of a mother material mounting

portion and is deposited on an upper surface of the mother material.

9. The method of claim 8, wherein said spraying unit of said third

step is horizontally moved in a longitudinal direction of the vapor organic

material carry pipe and/or is rotated.

10. The method of either claim 8 or claim 9, wherein said mother

material mounting portion of said third step is horizontally moved in a

bottom surface of the organic material chamber.

11. In a vapor organic material deposition apparatus, a vapor organic

material deposition apparatus of a wider area substrate, comprising:

a gas heater which is adapted to heat an inert gas by adjusting a gas reservoir having an inert gas therein and a MFC(Mass Flow

Controller);

a heater pipe wound on an outer portion of a connection pipe for

maintaining a temperature;

at least one deposition source tank which stores a gas to be

deposited and an organic material and heats a high temperature gas and

organic material particle by a gas heater in a state that the same are

diluted for thereby generating a diluted organic material in a gaseous

state;

a scan head and buffer chamber which have a deposition rate

adjusting unit adapted to check and adjust a movement of the diluted

organic material particle;

a gate valve which is adapted to implement a gating operation for

thereby opening and closing a flow of the diluted organic material particle;

and

a deposition chamber which is adapted to deposit the diluted

particle flown in from the deposition source tank on a wider area substrate,

wherein the gas heater heats a gas in order for the deposition

source tank adjusts the amount of gas and flows a heat source into the

same, and the gate valve is installed between the buffer chamber and the

deposition chamber for thereby preventing a temperature increase in a

wider area substrate by a heat source of the scan head and in the interior of the deposition chamber.

12. The apparatus of claim 11, wherein said deposition source tank

stores Ar, He, N2 and oxygen as a non-explosive inert gas which is stored

therein.

13. The apparatus of claim 11, wherein said san head is provided

more than at least one for concurrently depositing more than at least two

materials.

14. The apparatus of either claim 11 or claim 12, wherein a

temperature of the heater gas is maintained at 200°C - 800°C.

15. The apparatus of claim 11 , wherein said buffer chamber includes a

heat source disconnecting chamber and further includes an assistant

furnace for recycling an organic material in such a manner that an organic

material separated when the scan head is moved is re-circulated.

16. In a vapor organic material deposition method, a vapor organic

material deposition method of a wider area substrate, comprising the steps

of:

a first step in which an inert gas which flows from a deposition source tank based on an adjustment of a gas reservoir which stores an

inert gas therein and a MFC(Mass Flow Controller) is heated using a gas

heater based on an adjustment of a gas mount, and heat source is

inputted into the interior;

a step in which a temperature is maintained by a heater pipe

wound on an outer portion of a connection pipe;

a step in which at least one deposition source tank in which a gas

to be deposited and an organic material are stored is heated by a gas

heater in a state that a high temperature gas and an organic material

particle are diluted, and a diluted organic material in a gaseous state is

obtained;

a step in which a flow of the diluted organic material particle is

checked and adjusted, and a gating operation is performed with respect to

a scan head and buffer chamber attached with a deposition rate adjusting

unit and for opening and closing a flow of a diluted organic material

particle;

a step in which a diluted particle flown in from the gate valve and

the deposition source tank is deposited on a wider area substrate in the

deposition chamber;

a step in which the gate valve is installed between the buffer

chamber and the deposition chamber and a temperature increase is

prevented in a wider area substrate by a head source of the scan head and in the interior of a deposition chamber; and

a step in which an organic material which is separated when the

scan head is moved in the buffer chamber is collected by an assistant

furnace installed for a re-circulation of the organic material.

17. The method of claim 16, wherein said deposition source tank

contains Ar, He, N2 and oxygen as a non-explosive inert gas inputted into

the interior of the same.

18. The method of claim 16, wherein in a vapor organic material

generated in said deposition source tank, a pressure difference is 100-

10000times with respect to the interior of the deposition chamber.

19. The method of claim 16, wherein said gating step further includes

a step in which more than at least two kinds of organic materials inputted

into the interior of the deposition source tank are mixed.

20. The method of claim 16, wherein said gating step further includes

a step in which a thickness in the interior of an organic semiconductor

fabrication system is adjusted by a process time.

21. The method of either claim 16 or claim 17, wherein a temperature of the heater gas is maintained at 200°C - 800°C.

22. In a fabrication method of an organic semiconductor apparatus, a

vapor organic material deposition method of a wider area substrate,

comprising the steps of:

a step(S710) in which a substrate is loaded into a deposition

chamber in a deposition apparatus;

a step(S712) in which a deposition source tank is pre-heated and

a high temperature gas is flown in at a temperature of 200°C - 600°C;

a step(S714) in which a high temperature gas and an organic

material particle are mixed in the interior of the deposition source tank for

thereby forming a mixture, and is heated for thereby generating a

SGHP(Solid-Gas Heterogeneous Phase) material;

a step(S716) in which a large amount of vapor organic material

SGHP are carried from the deposition source tank to the buffer chamber

through the connection pipe;

a step(S718) in which the flowing amount of the vapor organic

material is measured using a vapor organic material sensor in the buffer

chamber, and when the flowing amount of the vapor organic material

reaches at a certain set amount, the buffer gate valve is opened;

a step(S720) in which a vapor organic material is deposited based

on a scan head operation; a step(S722) in which after a set deposition time is passed, the

scan head is moved; and

a step(S724) in which the buffer gate valve is closed, and the

substrate is unloaded.