201244223 六、發明說明： 本申請案主張於2011年4月13日在韓國知識產權 局申請的第10-2011-0034340號韓國專利申請案的優先 權及權利，該案的全部内容以引用的方式併入。 【發明所屬之技術領域】 本發明涉及一種用於形成薄膜的大容量沉積設備，並 且尤其涉及一種用於形成薄膜的大容量沉積設備，其中 有機物可蒸發並以薄膜的形式沉積於基板上。 【先前技術】 有機發光裝置是一種自身可以發光的下一代顯示裝 置’與液晶顯示器（LCD )裝置的效能相比，下一代顯 不裝置具有良好的視角、對比度、回應速度、功耗等。 有機發光裝置包括以矩陣型連接於掃描線與資料線之 間並形成圖元的有機發光二極體。有機發光二極體包括 陽極、陰極和在陽極與陰極之間形成並具有電洞傳輸 層、有機發光層及電子傳輸層的有機薄膜層。當在陽極 與陰極之間施加預定電壓時，從陽極注入的電洞和從陰 極注入的電子在發光層中重新組合，同時基於能量差而 發射光》 在用於有機薄膜層的沉積製程中使用的有機物不需要 同/飞壓，並且與無機物不同，有機物在高溫下容易分解 4 201244223 和變性。由於此材料性質，由鎢材料製成的源容器裝滿 有機物，並且加熱此源容器以蒸發有機物，從而在基板 上沉積常規的有機薄膜。 然而，源容器能夠儲存的有機物的量有限，且因此出 現了以下問題.有機物必須在沉積製程中頻繁地重新裝 填’而且在所有該等場合下，用於形成薄膜的大容量沉 積設備應在裝填製程中停機。 雖然最近已提出-種藉由提供大容量源容器來增加有 機物的裝填量的方法’但是因供應了更多熱量給源容器 以便加熱增大的源谷器並蒸發有機物因此仍出現有機 物變性的問題。 【發明内容】 因此，認為本發明可解決前述問題，並且本發明的— 態樣提供-種用於形成薄膜的大容量沉積設備，其中複 數個源容器用以增加待容納的源材料的量，以便可以延 長用於沉積薄膜的設備的暫停週期，並且在增加源材料 的蒸發速度的同時降低源材料的蒸發溫度，以便可以提 高設備的使用效率。 根據本發明的示範性實施例，提供一種用於形成薄膜 的大容量沉積設備，該設備包括：複數個源容器，待沉 積於基板上的源材料以㈣或液態容納於複數個源容器 么發至荒土至在源容器上方與源容器耦合並連通， 201244223 且來自源容器的已蒸發源材料穿過蒸發室；喷孔，喷孔 形成於蒸發室的頂部上並向上喷射穿過蒸發室的已蒸發 源材料；第一加熱器，第一加熱器在蒸發室内部提供於 源谷器上方並供熱給源容器以蒸發容納於源容器中的源 材料；感測器’感測器安裝在蒸發室中並感測穿過蒸發 室的已蒸發源材料的量；和控制器，控制器從感測器獲 得關於蒸發室中的已蒸發源材料的量的回饋並控制從源 容器蒸發的源材料的量。 根據本發明的另一示範性實施例，提供—種用於形成 薄膜的大谷里 >儿積設備’該設備包括··複數個源容器， 待/儿積於基板上的源材料以固態或液態容納於複數個源 容器中；蒸發室，蒸發室在源容器上方與源容器耦合並 連通，且來自源容器的已蒸發源材料穿過蒸發室；喷孔， 喷孔形成於蒸發室的頂部上並向上喷射穿過蒸發室的已 蒸發源材料；第一加熱器，第一加熱器在蒸發室内部提 供於源容器上方並供熱給源容器以蒸發容納於源容器中 的源材料；複數個感測器’複數個感測器安裝在源容器 中並感測從源容器流出的已蒸發源材料的量；和控制 器’控制器從感測器獲得關於源容器中的已蒸發源材料 的量的回饋並控制從源容器蒸發的源材料的量。 根據本發明的又一示範性實施例，提供一種用於形成 薄膜的大谷里〉儿積没備’該設備包括：複數個源容器， 待沉積於基板上的源材料以固態或液態容納於複數個源 ''器中，蒸發至，蒸發至在源谷器上方與源容器耦合並 201244223 連通，且來自源容器的已蒸發源材料穿㈣發室 喷孔形成於蒸發室的頂部上並向上噴射穿過蒸發室的已 蒸發源材料；複數個第—加熱器，複數個第―加熱器提 供於源容器中並供熱給源容器以蒸發容納於源容器中的 源材料；感測器，感測器安裝在蒸發室中並感測穿過蒸 發室的已蒸發源材料的量；和扣r在丨 扪里和控制器，控制器從感測器 獲得關於蒸發室中的已蒸發源材料的量的回饋並控制從 源容器蒸發的源材料的量。 根據本發明的又-示範性實施例，提供—種用於形成 薄膜的大容量沉積設備，該設備包括··複數個源容器， ^沉積於基板上的源材料·態或液態容納於複數個源 合器中’蒸發至，蒸發室在源容器上方與源容器耦合並 連通，且來自源容器的已蒸發源材料穿過蒸發室；喷孔， 噴孔形成於蒸發至的頂部上並向上喷射穿過蒸發室的已 蒸發源材料；複數個第一加熱器，複數個第一加熱器提 供於源容器中並供熱給源容器以蒸發容納於源容器中的 源材料，複數個感測器，複數個感測器安裝在源容器中 並感測從源容器流出的已蒸發源材料的量；和控制器， 控制器從感測器獲得關於源容器中的已蒸發源材料的量 的回饋並控制從源容器蒸發的源材料的量。 設備可進一步包括複數個傳送單元，該複數個傳送單 7L分別耦合到源容器並在變得靠近第一加熱器或變得遠 離第一加熱器的方向上傳送源容器中的源材料。 控制器從感測器獲得關於已蒸發源材料的量的回饋， 201244223 設參考量，則控制器傳201244223 VI. OBJECTS OF THE INVENTION: This application claims priority to and the benefit of the Korean Patent Application No. 10-2011-0034340, filed on Apr. 13, 2011 in the Korean Intellectual Property Office, the entire contents of which is incorporated by reference. Incorporate. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a large-capacity deposition apparatus for forming a thin film, and more particularly to a large-capacity deposition apparatus for forming a thin film in which an organic substance can be evaporated and deposited on a substrate in the form of a thin film. [Prior Art] The organic light-emitting device is a next-generation display device that can emit light by itself. Compared with the performance of a liquid crystal display (LCD) device, the next-generation display device has good viewing angle, contrast, response speed, power consumption, and the like. The organic light-emitting device includes an organic light-emitting diode that is connected in a matrix form between the scan line and the data line to form a picture element. The organic light-emitting diode includes an anode, a cathode, and an organic thin film layer formed between the anode and the cathode and having a hole transport layer, an organic light-emitting layer, and an electron transport layer. When a predetermined voltage is applied between the anode and the cathode, the hole injected from the anode and the electron injected from the cathode are recombined in the light-emitting layer while emitting light based on the energy difference" used in the deposition process for the organic thin film layer The organic matter does not need to be the same/flying pressure, and unlike inorganic substances, organic matter is easily decomposed at high temperatures 4 201244223 and denaturation. Due to the nature of this material, the source container made of tungsten material is filled with organic matter, and the source container is heated to evaporate the organic matter, thereby depositing a conventional organic thin film on the substrate. However, the source container is capable of storing a limited amount of organic matter, and thus the following problems occur. The organic substance must be frequently refilled in the deposition process' and in all such cases, the bulk deposition apparatus for forming a film should be filled. Downtime during the process. Although a method of increasing the loading amount of organic matter by providing a large-capacity source container has recently been proposed, the problem of organic denaturation still occurs because more heat is supplied to the source container to heat the enlarged source sump and evaporate the organic matter. SUMMARY OF THE INVENTION Accordingly, the present invention is believed to solve the aforementioned problems, and the present invention provides a large-capacity deposition apparatus for forming a film in which a plurality of source containers are used to increase the amount of source material to be accommodated. In order to extend the pause period of the apparatus for depositing the thin film, and to increase the evaporation temperature of the source material while increasing the evaporation speed of the source material, the use efficiency of the apparatus can be improved. According to an exemplary embodiment of the present invention, there is provided a large-capacity deposition apparatus for forming a thin film, the apparatus comprising: a plurality of source containers, the source material to be deposited on the substrate being contained in a plurality of source containers in a (four) or liquid state From the wasteland to the source container coupled and connected above the source container, 201244223 and the evaporated source material from the source container passes through the evaporation chamber; the orifice is formed on the top of the evaporation chamber and sprayed upward through the evaporation chamber Evaporating the source material; a first heater, the first heater is provided above the source chamber in the evaporation chamber and supplies heat to the source container to evaporate the source material contained in the source container; the sensor' sensor is installed in the evaporation chamber And sensing an amount of evaporated source material passing through the evaporation chamber; and a controller that obtains feedback from the sensor regarding the amount of evaporated source material in the evaporation chamber and controls source material evaporated from the source container the amount. According to another exemplary embodiment of the present invention, there is provided an apparatus for forming a thin film of a film, wherein the apparatus comprises a plurality of source containers, and the source material to be accumulated on the substrate is solid or The liquid is contained in a plurality of source containers; the evaporation chamber is coupled and connected to the source container above the source container, and the evaporated source material from the source container passes through the evaporation chamber; the orifice is formed at the top of the evaporation chamber Ejecting the evaporated source material through the evaporation chamber upwardly and upwardly; a first heater, the first heater is provided above the source container inside the evaporation chamber and supplies heat to the source container to evaporate the source material contained in the source container; a sensor's plurality of sensors are mounted in the source container and sense the amount of evaporated source material flowing from the source container; and the controller' controller obtains from the sensor the evaporated source material in the source container The amount of feedback and control of the amount of source material evaporated from the source container. According to still another exemplary embodiment of the present invention, there is provided a method for forming a film, wherein the device comprises: a plurality of source containers, and the source material to be deposited on the substrate is contained in a solid or liquid state in plural In one source, the evaporator evaporates to evaporate to the source container and is coupled to the source container and 201244223, and the evaporated source material from the source container is formed through the top of the evaporation chamber and is sprayed upward. An evaporation source material passing through the evaporation chamber; a plurality of first heaters, a plurality of first heaters being provided in the source container and supplying heat to the source container to evaporate source material contained in the source container; sensor, sensing Installed in the evaporation chamber and senses the amount of evaporated source material passing through the evaporation chamber; and the buckle is in the crucible and the controller, the controller obtains from the sensor the amount of evaporated source material in the evaporation chamber The feedback and control of the amount of source material evaporated from the source container. According to still another exemplary embodiment of the present invention, there is provided a large-capacity deposition apparatus for forming a thin film, the apparatus comprising: a plurality of source containers, a source material state or a liquid state deposited on the substrate, which is accommodated in a plurality of Evaporating to the source coupler, the evaporation chamber is coupled and connected to the source container above the source container, and the evaporated source material from the source container passes through the evaporation chamber; the orifice is formed on the top to be evaporated and sprayed upward An evaporation source material passing through the evaporation chamber; a plurality of first heaters, a plurality of first heaters being provided in the source container and supplying heat to the source container to evaporate source material contained in the source container, a plurality of sensors, A plurality of sensors are mounted in the source container and sense an amount of evaporated source material flowing from the source container; and a controller that obtains feedback from the sensor regarding the amount of evaporated source material in the source container and The amount of source material that is evaporated from the source container is controlled. The apparatus can further include a plurality of transfer units 7L coupled to the source container and transferring the source material in the source container in a direction toward or away from the first heater, respectively. The controller obtains feedback on the amount of material that has been evaporated from the sensor, 201244223 sets the reference amount, then the controller transmits
降低第一加熱器的溫度的信號。 並且若已蒸發源材料的量低於預 輸信號至傳送單元以使得源材料 熱器的方向上傳送，或者控制器 器的溫度的信號，並且若已蒸 設備可進一步包括阻擋板， ’阻擋板提供於蒸發室内部A signal that lowers the temperature of the first heater. And if the amount of material that has been evaporated is lower than the pre-transmission signal to the transfer unit to cause the direction of the source material heater, or the temperature of the controller, and if the steamed device can further include a blocking plate, the 'blocking plate Provided inside the evaporation chamber
器供熱給源材料的同時喷濺並附著到喷孔。 距離間隔 阻擋板可形如平板並與蒸發室的内壁以預定The device supplies heat to the source material while splashing and attaching to the orifice. The distance blocking plate can be shaped like a flat plate and with the inner wall of the evaporation chamber to be predetermined
發室的頂部或側面上並供熱給蒸發室以防止穿過蒸發室 的已蒸發源材料相變成液態或固態。 源容器可分離地耦合到蒸發室。 如上所述’根據本發明的示範性實施例的用於形成薄 膜的大容量沉積設備減少了加熱源材料以防止包含於源 容器中的源材料變性所需的熱的量，並且加快了來自複 數個源容器的源材料的蒸發速度以便加快使薄膜沉積於 基板上的速度。 另外’在根據本發明的示範性實施例的用於形成薄膜 的大容量沉積設備中，藉由調整源容器與第一加熱器之 間的距離或第一加熱器的溫度來控制從源容器蒸發的源 8 201244223 材料的直，從而穩定地維持已蒸發源材料的量。 此外，根據本發明的示範性實施例的用於形成薄膜的 大容量沉積設備防止從源容器向上濺射的源材料或外來 材料附著到喷孔，並且在不暫停生產的情況下使得長時 間的連續生產成為可能。 另外，在根據本發明的示範性實施例的用於形成薄膜 的大容量沉積設備中，可以藉由第一加熱器的溫度控制 迅速完成源容器中的源材料的溫度反應；可在無大變化 的情況下持續地維持用於源容器中的源材料的所需目標 溫度；並且源材料可以穩定地蒸發，由此完成均勻沉積 和大面積沉積。 另外’根據本發明的示範性實施例的用於形成薄膜的 大容量沉積設備可以防止穿過蒸發室的已蒸發源材料相 變成液態或固態，並且防止保持不沉積於基板上的已蒸 發源材料附著並堵塞喷孔。 【實施方式】 在下文中，將根據附圖來描述根據本發明的用於形成 薄膜的大容量沉積設備的示範性實施例。 圖1為根據本發明的第一不範性實施例的用於形成薄 膜的大容量沉積設備的示意圖。 參考圖1，在此示範性實施例中的用於形成薄膜的大 容量沉積設備（此設備是能夠蒸發有機物並將有機物以 201244223 薄膜形式沉積於基板上的設備）包括源容器110、蒸發 室12〇、喷孔U0、第一加熱器14〇、冷卻器146、感測 器150、控制器160、傳送單元170、阻擋板18〇和第二 加熱器190。 本發明提供一種用於製造有機發光裝置（〇LED)的設 備，其中在示範性實施例中使用的源材料作為實例可為 有機物。 源容器110形如一側開口的氣缸，待沉積於基板 上的源材料1以固態或液態容納於源容器i 1〇中。在此 不範性實施例中，提供了複數個源容器110，並且複數 個源容器110各自耦合到蒸發室12〇的底側。通常，源 容器110由鎮材料製成並且裝滿作為源材料1而沉積於 基板10上的有機物。 因提供了複數個源容器u並且分散了容納於源容器 110中的源材料1的量，因此與單-大容量源容器相比， 減少加熱源材料1所需的熱的量具有可能性。因此，防 :藉由供應的熱量使容納於源容器110，的源材料變性 ::可能性。另外，加快從複數個源容器110蒸發的源 ;的蒸發速度具有可能性，a因此也可以加快使薄膜 沉積於基板10上的速度。 薄膜 :時’源容器110可與真空管線（未圖示）連接以使 〆原各器110的内部伴捭直处 1保持在真空壓力條件下，同時執行沉 源材料1在源容器i 10中的高溫和高壓下變性。 .-、防止源材料！變性，源容器11〇中必須保持低溫和 201244223 低壓。另外，真空度大大影響了源材料1的蒸發點。蒸 發點傾向於隨著真空度的減少而降低，因此在源容器 110中保持低真空度對防止源材料變性更有效。 提供來自源容器1 1 0的已蒸發源材料1穿過的空間的 蒸發室120在源容器110的上側與源容器11〇耦合並連 通。以固態或液態容納於源容器i 10中的源材料丨藉由 將在後文描述的第一加熱器140加熱，並且經加熱的源 材料1向上氣化並汽化。將已蒸發源材料丨引入佈置於 源容器11 0上方的蒸發室120中，且接著已蒸發源材料 1穿過蒸發室120，以使蒸發材料i可通過喷孔13〇 (將 在後文播述）朝向基板喷射。 瘵發室120具有足夠大的容積來容納相當大量的已蒸 發源材料1。因為從源容器丨1〇蒸發的源材料丨充分地 容納於蒸發室120中，所以可以穩定地維持藉由喷孔13〇 向基板10喷射的源材料的量❶形成蒸發室12〇以得到足 夠的内部空間，且因此蒸發室12〇充當一種累積器。 蒸發室120可分離地耦合到源容器11〇。當源材料丄 (亦即，待沉積於基板10上的有機物）裝填在源容器 110中時，暫停沉積製程並且將源容器n〇與蒸發室12〇 为離。其後，若源材料1完全裝填於源容器110中，則 源令器11 〇再次耦合到蒸發室120，並且重新開始沉積 製程。 喷孔130形成於蒸發室的頂部上，喷孔13〇是用於向 上（亦即向基板10)喷射穿過蒸發室12〇的已蒸發源材 11 201244223 料1的開口。喷孔130在基板1〇的寬度方向上對準並且 面向基板10。 喷孔130可以按喷嘴的形式製造成為單獨的部分並 且喷孔130可耦合到蒸發室12〇並且可作為通孔一體地 形成於蒸發室120的上部壁上。 供熱給源容器U0以便蒸發容納於源容器110中的源 材料的第一加熱器140在蒸發室120内部安裝於源容器 110上方。 /要了以為蒸發原材料1提供熱能，第一加熱器140 便可具有各種形狀。例如，可以使用核心加熱器、燈加 …、器等等在此示範性實施例中，將核心加熱器用作第 一加熱器140。藉由將電阻熱絲繞在蒸發室12〇内部的 板周圍來完成第-加熱器14G。此時，電阻熱絲可包含 Ta、W、Mo或以上物質的合金。 在此示範性實施例中，第一加熱器140安裝於與源容 器no連通的蒸發室120中，使得來自第一加熱器14〇 的熱量可以在無介質的情況下直接傳遞到源容器110。 因此，可藉由第一加熱器14〇的溫度控制迅速完成源容 器110中的源材料J的溫度反應，並且可在無大變化的 情況下持續地維持用於源容器11G中的源材料1的所需 目標溫度。 冷卻器146冷卻容納於源容器11〇中的源材料i，以 便防止藉由來自第—加熱器14〇的熱量使容納於源容器 U〇中的源材料1變性。冷卻器146安裝於源容器11〇 12 201244223 外面並且可經配置以圍繞源容器i 1()的外圓周。 可藉由以能夠冷卻裝滿源材料1的源容器11 0内部的 各種形式來完成冷卻器146。在此示範性實施例中，冷 卻套用作實例。藉由用冷卻通道圍繞源容器110的外圓 周來配置冷卻器146，冷卻液在冷卻通道中流動。 感測器150安裝在蒸發室12〇中並感測穿過蒸發室 120的已蒸發源材料i的量。根據由感測器15〇感測的 已蒸發源材料的量，控制第一加熱器14〇的溫度和傳送 單元170的操作方向或傳送速度，由此調整已蒸發源材 料1的量。 控制器160從感測器150獲得關於蒸發室120中的源 材料1的量的回饋並控制第一加熱器14〇或傳送單元 170 ’從而控制從源容器110蒸發的源材料1的量。 舉例而言’若蒸發室12〇中的源材料的量低於參考 罝’則控制器160傳輸信號到傳送單元170，以便源材 料1可在變得靠近第一加熱器140的方向上傳送，或控 制器160傳輸用於升高第一加熱器14〇的溫度的信號， 從而增加源容器11 〇中蒸發的源材料的量。 另一方面，若蒸發室12〇中的源材料的量高於參考 13 1 ’則控制器160傳輸信號到傳送單元170，以便源材 料1可在變得遠離第一加熱器14〇的方向上傳送，或控 制器160傳輸用於降低第一加熱器140的溫度的信號， 從而減少源容器110中蒸發的源材料的量。 時 個感測器1 5 0安裝在蒸發室1 2 〇中，且因此 201244223 控制器1 60同時控制將在後文描述的複數個傳送單元 170 ° 提供複數個傳送單元170,並且複數個傳送單元17〇 分別耦合到複數個源容器110並使源容器11〇中的源材 料1在變得靠近第一加熱器140或變得遠離第一加熱器 130的方向上往復運動。因此，傳送單元17〇用以調整 源材料1與第一加熱器14〇之間的距離，從而控制源容 器中蒸發的源材料的量。 只要可以具有線性往復運動，便可以按各種形式配置 傳送單元no。舉例而言，可以使用所屬領域的技術人 員所熟知的氣缸、線性電動機、旋轉電動機和滾珠螺杆 的組合以及類似結構，因此將省略以上元件的詳細描述。 阻擋板180防止容納於源容器〖1〇中的源材料或外來 材料在第一加熱器140供熱給源容器1的同時濺射並附 著到喷孔140。 當源容器110中的源材料由第一加熱器14〇加熱時， 氣化的源材料1通常從固態或液態源材料1的表面汽 化。然而，液態源材料！可能會突然賤起，或者混合在 源材料1中的外來材料可能會突然灑落。 因為濺射的源材料1或外來材料附著到喷孔130,所 以出現了堵塞喷孔13〇的問題。若喷孔13〇被堵塞，則 必須暫停製程以用新的製程取代或清潔喷孔13〇,並且 接著重新開始此製程。在此情況下，設備的產量減少。 匕阻擋板1 8 0阻擋未蒸發但卻藏射並附著到噴孔 201244223 的源材料1或外來材料並且使得長時間的連續生產 成為可能，從而增加設備的產量。 、同時，來自阻擋板的頂部的熱量可以通過連通路徑傳 、原材料1。在此情況下，蒸發源材料^的量可能取 決於，料不到的外在因素而變化，蒸發源材料i的量的 2制是基於第一加熱器140與源材料i之間的距離或第 加熱器140的溫度。蒸發源材料1的量的改變直接影 β有機發光二極體的厚度’並且產生缺陷產品。 因此’阻擋板180用以完全攔截從外部傳遞到源材料 1的熱量’從而消除可能影響蒸發源材料i的量 因素。 阻擋板180形如平板並安襄在蒸發室12〇内部，並且 阻擋板18〇佈置在第-加熱器14〇上方。另夕卜，阻撐板 18〇與蒸發室12G的内壁以狀距離間隔，以便已蒸發 源材料可以穿過阻擋板刚與蒸發室m的内壁之間的 空間並且朝喷孔13〇移動。 供熱給蒸發室12G以便防止穿過蒸發室12〇的已蒸發 源材料相變成液態或固態的第二加熱器170安裝在蒸發 室120的頂部和側面。 同樣地，第二加熱器170可以使用核心加熱器、燈加 熱器等，並且第二加熱器170按以下方式形成：電阻熱 絲安置成與蒸發室12G的㈣平行H現在所使用 的電阻熱絲可能含有Ta、w、MO或以上物質的合金。 第二加熱器m防止已蒸發源材料不沉積於基板1〇 15 201244223 上卻附著並堵塞喷孔13〇的現象。保持在蒸發室中的已 蒸發源材料1累積于喷孔1 3 0的一側並且因此導致相變 成固態而堵塞噴孔13〇。因此，第二加熱器17〇升高喷 孔130周圍的溫度，以便總能使喷孔13〇周圍的源材料 保持在氣化狀態。 如上所述，根據本發明的示範性實施例的用於形成薄 膜的大容量沉積設備包括複數個源容器以分散包含於源 容器中的源材料的量，以便可以減少加熱源材料所需的 熱的量以防止包含於源容器中的源材料變性，並且可以 加快來自複數個源容器的源材料的蒸發速度以加快將薄 膜沉積於基板上的速度。 另外’在根據本發明的示範性實施例的用於形成薄膜 的大容量沉積設備中’藉由調整源容器與第一加熱器之 間的距離或第一加熱器的溫度來控制從源容器蒸發的源 材料的量，從而穩定地維持已蒸發源材料的量。 此外’根據本發明的示範性實施例的用於形成薄膜的 大容量沉積設備防止從源容器向上濺射的源材料或外來 材料附著到喷孔’並且在不暫停生產的情況下使得長時 間的連續生產成為可能。 另外’在根據本發明的示範性實施例的用於形成薄膜 的大容量沉積設備中，在無介質的情況下將熱量直接從 第一加熱器傳遞到源容器，以便可以藉由第一加熱器的 溫度控制迅速完成源容器中的源材料的溫度反應；可以 在無大變化的情況下持續地維持用於源容器中的源材料 16 201244223 的所需目標溫度；並且源材料可以穩定地蒸發，由此完 成均勻沉積和大面積沉積。 另外，在根據本發明的示範性實施例的用於形成薄膜 的大容量沉積設備中，用於供熱給蒸發室的第二加熱器 女裝在蒸發室的頂部上，以便可以防止穿過蒸發室的已 蒸發源材料相變成液態或固態，並且可以防止保持不沉 積於基板上的已蒸發源材料附著並堵塞喷孔。 圖2為根據本發明的第二示範性實施例的用於形成薄 膜的大容量沉積設備的示意圖。 參考圖2,根據本示範性實施例的用於形成薄膜的大 谷1沉積設備200特徵在於，複數個感測器25〇分別安 裝在源容器110中。在圖2中，元件具有與圖J中所示 由相同數位提及的元件的配置和功能相同的配置和功 能’因此將省略該等元件的詳細描述。 it供複數個感測2 5 0以分別安裝到源容器11 〇中。 在此’感測器250感測從源容器丨10流出的已蒸發源材 料的量。 控制器260從感測器250獲得關於源容器中的已蒸發 源材料的量的回饋並控制從源容器i 10蒸發的源材料的 量。根據由感測器250感測的已蒸發源材料的量，控制 第一加熱器140的溫度和傳送單元丨7〇的操作方向或傳 送速度，由此調整已蒸發源材料的量。 此時’在每一個源容器11 〇中安裝一個感測器250， 以便控制器260可以單獨地控制複數個傳送單元17〇。 17 201244223 因為在每—個源容器110中安裝一個感測器250,所 乂存在控制器260可以調整蒸發源材料的量的多種選 擇。亦即，若複數個源容器110完全缺乏蒸發量，則控 制器260可升高第一加熱器14〇的溫度或同時控制複數 個傳送單元17〇以縮短源材料與第一加熱器之間的 距離。另一方面，若某一源容器丨1〇缺乏蒸發量，則控 制器260可以在不改變第一加熱器14〇的溫度的情況下 僅控制耦合到對應源容器110的傳送單元170，從而縮 短源材料與第一加熱器140之間的距離。 在具有前述配置的用於形成薄膜的大容量沉積設備 中，感測器安裝在每一個源容器中，並且存在控制器可 以控制蒸發源材料的量的多種選擇，從而對維持源容器 中的均勻蒸發量產生影響。 圖3為根據本發明的第三示範性實施例的用於形成薄 膜的大各罝沉積設備的示意圖。 參考圖3根據本示範性實施例的用於形成薄膜的大 今里沉積設備3〇〇的特徵在於，複數個加熱器34〇分別 女·裝在源容器110中。在圖3中，元件具有與圖i中所 示由相同數位提及的元件的配置和功能相同的配置和功 能，因此將省略該等元件的詳細描述。 提供複數個加熱器340以分別安裝在源容器u〇中。 在此，加熱器340佈置在冷卻器146上方，同時圍繞源 容器110的外圓周。 控制器260從安裝在蒸發室120中的感測器150獲得 18 201244223 關於源容器110中的已蒸發源材料的量的回饋並控制從 源容器11 0蒸發的源材料的量。 此時，用於感測源材料的蒸發量的感測器1 5〇安裝在 蒸發室120中，以便控制器360可以同時控制複數個傳 送单元170並早獨地控制複數個第一加熱器340。 若蒸發室120缺乏蒸發室120中的源材料的蒸發量， 則控制器360可升高每一第一加熱器340的溫度或同時 控制複數個傳送單元170以縮短源材料與第一加熱器 3 40之間的距離。 圖4為根據本發明的第四示範性實施例的用於形成薄 膜的大容量沉積設備的示意圖。 參考圖4’根據本示範性實施例的用於形成薄膜的大 容量沉積設備400特徵在於，複數個加熱器440和複數 個感測器450分別安裝在源容器1丨〇中。在圖4中，元 件具有與圖1中所示由相同數位提及的元件的配置和功 能相同的配置和功能，因此將省略該等元件的詳細描述。 提供複數個加熱器440以分別安裝在源容器11〇中並 且佈置在冷卻器146上方’同時圍繞源容器11〇的外圓 周。 控制器4 6 0從感測器4 5 0獲得關於源容器11 〇中的已 蒸發源材料的量的回饋並控制從源容器i 10蒸發的源材 料的量。 此時’用於感測源材料的蒸發量的感測器150安裝在 每一個蒸發室120中，以便控制器460可以單獨控制複 19 201244223 數個傳送單元17〇並單獨地控制複數個第—加熱器34〇。 因為感測器250分別安裝在源容器11〇中所以存在 控制器460可以調整蒸發源材料的量的多種選擇。亦 即1複數個源容器11G完全缺乏蒸發量，則控制器46〇 可升高所有第-加熱器14G的溫度或同時控制複數個傳 送單元170以縮短源材料與第一加熱器44〇之間的距 離。另一方面，若某一源容器11〇缺乏蒸發量，則控制 器460可升高耦合到對應源容器ιι〇的第—加熱器4⑽ 的溫度或僅控制耦合到對應源容器11〇的傳送單元 17〇,從而縮短源材料與第一加熱器44〇之間的距離。 β雖然已展示並描述了本發明的少數示範性實施例，但 是所屬領域的技術人員應該理解，可以在不脫離本發明 的原理和精神的情況下對該等實施例作出改變，在所附 申請專利範圍及等效物中定義本發明的範圍。 【圖式簡單說明】 通過示範性實施例的以下描述與附圖結合，本發明的 以上和/或其他態樣將變得顯而易見且更易理解，其中 圖1為根據本發明的第一示範性實施例的用於形成薄 膜的大容量沉積設備的示意圖； 圖2為根據本發明的第二示範性實施例的用於形成薄 膜的大容量沉積設備的示意圖； 圖3為根據本發明的第三示範性實施例的用於形成薄 201244223 膜的大容量沉積設備的示意圖； 圖4為根據本發明的第四示範性實施例的用於形成薄 膜的大容量沉積設備的示意圖。 【主要元件符號說明】 1 源材料 10 基板 110 源容器 120 蒸發室 130 喷孔 140 第一加熱器 146 冷卻器 150 感測器 160 控制器 170 傳送單元 180 阻擋板 190 加熱器 200 大容量沉積設備 250 感測器 260 控制器 300 大容量沉積設備 340 加熱器 400 大容量沉積設備 21 201244223 440 加熱器 450 感測器 460 控制器 22The top or side of the chamber is heated and supplied to the evaporation chamber to prevent the vaporized source material passing through the evaporation chamber from becoming liquid or solid. The source container is detachably coupled to the evaporation chamber. As described above, the large-capacity deposition apparatus for forming a thin film according to an exemplary embodiment of the present invention reduces the amount of heat required to heat the source material to prevent denaturation of the source material contained in the source container, and accelerates from the plural The evaporation rate of the source material of the source containers is such as to accelerate the deposition of the film on the substrate. Further, in the large-capacity deposition apparatus for forming a thin film according to an exemplary embodiment of the present invention, evaporation from the source container is controlled by adjusting the distance between the source container and the first heater or the temperature of the first heater Source 8 201244223 The material is straight, thus stably maintaining the amount of material that has been evaporated. Further, the large-capacity deposition apparatus for forming a thin film according to an exemplary embodiment of the present invention prevents source material or foreign material sputtered upward from a source container from adhering to an orifice, and makes long-time without suspending production. Continuous production is possible. In addition, in the large-capacity deposition apparatus for forming a thin film according to an exemplary embodiment of the present invention, the temperature reaction of the source material in the source container can be quickly completed by temperature control of the first heater; The desired target temperature for the source material in the source container is continuously maintained; and the source material can be stably evaporated, thereby completing uniform deposition and large-area deposition. Further, the large-capacity deposition apparatus for forming a thin film according to an exemplary embodiment of the present invention can prevent the evaporated source material passing through the evaporation chamber from becoming liquid or solid, and preventing the evaporated source material from being deposited on the substrate. Attach and block the nozzle. [Embodiment] Hereinafter, an exemplary embodiment of a large-capacity deposition apparatus for forming a thin film according to the present invention will be described in accordance with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic illustration of a bulk deposition apparatus for forming a film in accordance with a first non-limiting embodiment of the present invention. Referring to FIG. 1, a large-capacity deposition apparatus for forming a thin film in this exemplary embodiment (this apparatus is an apparatus capable of evaporating organic matter and depositing an organic substance on a substrate in the form of a 201244223 film) includes a source container 110, an evaporation chamber 12 The crucible, the orifice U0, the first heater 14A, the cooler 146, the sensor 150, the controller 160, the transfer unit 170, the blocking plate 18A, and the second heater 190. The present invention provides an apparatus for manufacturing an organic light-emitting device (〇LED), wherein the source material used in the exemplary embodiment may be an organic material as an example. The source container 110 is shaped like a cylinder that is open on one side, and the source material 1 to be deposited on the substrate is housed in the source container i 1 固态 in a solid or liquid state. In this exemplary embodiment, a plurality of source containers 110 are provided, and a plurality of source containers 110 are each coupled to the bottom side of the evaporation chamber 12A. Generally, the source container 110 is made of a sinter material and filled with organic matter deposited on the substrate 10 as the source material 1. Since a plurality of source containers u are provided and the amount of the source material 1 contained in the source container 110 is dispersed, it is possible to reduce the amount of heat required to heat the source material 1 as compared with the single-large capacity source container. Therefore, it is prevented that the source material contained in the source container 110 is denatured by the supplied heat. In addition, it is possible to speed up the evaporation rate of the source evaporating from the plurality of source containers 110, so that the speed at which the film is deposited on the substrate 10 can also be accelerated. Membrane: The 'source container 110' can be connected to a vacuum line (not shown) to maintain the internal collateral 1 of the retort 110 under vacuum pressure conditions while performing the sink source material 1 in the source container i 10 Denaturation at high temperatures and pressures. .-, prevent source materials! For denaturation, the source vessel must be kept at a low temperature and a low pressure of 201244223. In addition, the degree of vacuum greatly affects the evaporation point of the source material 1. The evaporation point tends to decrease as the degree of vacuum decreases, so maintaining a low degree of vacuum in the source container 110 is more effective in preventing denaturation of the source material. An evaporation chamber 120 that provides a space through which the evaporated source material 1 of the source container 110 passes is coupled to and communicated with the source container 11 at the upper side of the source container 110. The source material contained in the source container i 10 in a solid or liquid state is heated by the first heater 140 described later, and the heated source material 1 is vaporized upward and vaporized. The evaporated source material crucible is introduced into the evaporation chamber 120 disposed above the source container 110, and then the evaporation source material 1 is passed through the evaporation chamber 120 so that the evaporation material i can pass through the orifice 13 (which will be broadcast later) Said) spraying toward the substrate. The burst chamber 120 has a sufficiently large volume to accommodate a relatively large amount of evaporated source material 1. Since the source material 〇 evaporated from the source container 丨1〇 is sufficiently accommodated in the evaporation chamber 120, it is possible to stably maintain the amount of the source material ejected toward the substrate 10 by the orifice 13 to form the evaporation chamber 12 〇 to obtain sufficient The internal space, and thus the evaporation chamber 12, acts as an accumulator. The evaporation chamber 120 is detachably coupled to the source container 11A. When the source material 丄 (i.e., the organic matter to be deposited on the substrate 10) is loaded in the source container 110, the deposition process is suspended and the source container n is separated from the evaporation chamber 12. Thereafter, if the source material 1 is completely filled in the source container 110, the source 11 is again coupled to the evaporation chamber 120, and the deposition process is restarted. The orifice 130 is formed on the top of the evaporation chamber, and the orifice 13 is an opening for ejecting the vaporized source material 11 201244223 to the upper portion (i.e., toward the substrate 10). The orifices 130 are aligned in the width direction of the substrate 1A and face the substrate 10. The orifice 130 may be fabricated as a separate portion in the form of a nozzle and the orifice 130 may be coupled to the evaporation chamber 12A and may be integrally formed as a through hole on the upper wall of the evaporation chamber 120. A first heater 140 that supplies heat to the source container U0 to evaporate the source material contained in the source container 110 is mounted inside the evaporation chamber 120 above the source container 110. / It is assumed that the evaporation raw material 1 provides heat energy, and the first heater 140 can have various shapes. For example, a core heater, a lamp heater, etc. can be used, in this exemplary embodiment, a core heater is used as the first heater 140. The first heater 14G is completed by winding a resistance heating wire around a plate inside the evaporation chamber 12''. At this time, the electric resistance filament may contain Ta, W, Mo or an alloy of the above substances. In this exemplary embodiment, the first heater 140 is mounted in the evaporation chamber 120 in communication with the source container no such that heat from the first heater 14A can be directly transferred to the source container 110 without the medium. Therefore, the temperature reaction of the source material J in the source container 110 can be quickly completed by the temperature control of the first heater 14A, and the source material 1 for use in the source container 11G can be continuously maintained without a large change. The required target temperature. The cooler 146 cools the source material i contained in the source container 11 to prevent denaturation of the source material 1 accommodated in the source container U〇 by the heat from the first heater 14. The cooler 146 is mounted outside of the source container 11 2012 12 201244223 and can be configured to surround the outer circumference of the source container i 1 (). The cooler 146 can be completed by various forms capable of cooling the inside of the source container 10 filled with the source material 1. In this exemplary embodiment, a cooling jacket is used as an example. The cooler 146 is disposed by surrounding the outer circumference of the source container 110 with a cooling passage, and the coolant flows in the cooling passage. The sensor 150 is installed in the evaporation chamber 12A and senses the amount of the evaporated source material i passing through the evaporation chamber 120. The temperature of the first heater 14A and the operation direction or the conveying speed of the conveying unit 170 are controlled in accordance with the amount of the evaporated source material sensed by the sensor 15A, thereby adjusting the amount of the evaporated source material 1. The controller 160 obtains feedback from the sensor 150 regarding the amount of the source material 1 in the evaporation chamber 120 and controls the first heater 14 or the transfer unit 170' to thereby control the amount of the source material 1 evaporated from the source container 110. For example, if the amount of source material in the evaporation chamber 12A is lower than the reference 罝', the controller 160 transmits a signal to the transfer unit 170 so that the source material 1 can be transferred in a direction to become close to the first heater 140, Or the controller 160 transmits a signal for raising the temperature of the first heater 14 turns, thereby increasing the amount of source material evaporated in the source container 11 . On the other hand, if the amount of the source material in the evaporation chamber 12A is higher than the reference 13 1 ', the controller 160 transmits a signal to the transfer unit 170 so that the source material 1 can be in a direction away from the first heater 14A. The transfer, or controller 160, transmits a signal for reducing the temperature of the first heater 140, thereby reducing the amount of source material evaporated in the source container 110. The time sensor 150 is installed in the evaporation chamber 1 2 ,, and thus the 201244223 controller 1 60 simultaneously controls a plurality of transmission units 170 to provide a plurality of transmission units 170, and a plurality of transmission units, which will be described later. 17〇 are respectively coupled to the plurality of source containers 110 and cause the source material 1 in the source container 11 to reciprocate in a direction to become close to or away from the first heater 140. Therefore, the transfer unit 17 is used to adjust the distance between the source material 1 and the first heater 14A, thereby controlling the amount of source material evaporated in the source container. The transfer unit no can be configured in various forms as long as it can have a linear reciprocating motion. For example, a cylinder, a linear motor, a combination of a rotary motor and a ball screw, and the like, which are well known to those skilled in the art, can be used, and thus a detailed description of the above elements will be omitted. The blocking plate 180 prevents the source material or the foreign material contained in the source container from being sputtered and attached to the injection hole 140 while the first heater 140 supplies heat to the source container 1. When the source material in the source vessel 110 is heated by the first heater 14, the vaporized source material 1 is typically vaporized from the surface of the solid or liquid source material 1. However, liquid source material! The material may suddenly pick up, or the foreign material mixed in the source material 1 may suddenly spill. Since the sputtered source material 1 or foreign material adheres to the orifice 130, there is a problem that the orifice 13 is blocked. If the orifice 13 is blocked, the process must be paused to replace or clean the orifice 13〇 with a new one, and then the process is restarted. In this case, the production of the equipment is reduced. The barrier plate 180 blocks the source material 1 or foreign material that has not evaporated but is hidden and adhered to the orifice 201244223 and enables continuous production for a long period of time, thereby increasing the throughput of the apparatus. At the same time, the heat from the top of the blocking plate can be transmitted through the communication path, the raw material 1. In this case, the amount of the evaporation source material may vary depending on the external factors that are not expected, and the amount of the evaporation source material i is based on the distance between the first heater 140 and the source material i or The temperature of the first heater 140. The change in the amount of the evaporation source material 1 directly affects the thickness of the beta organic light-emitting diode' and produces a defective product. Therefore, the 'barrier plate 180 serves to completely intercept the heat transferred from the outside to the source material 1' to eliminate the amount of factors that may affect the evaporation source material i. The blocking plate 180 is shaped like a flat plate and is mounted inside the evaporation chamber 12, and the blocking plate 18 is disposed above the first heater 14. Further, the barrier rib 18 〇 is spaced apart from the inner wall of the evaporation chamber 12G so that the evaporated source material can pass through the space between the barrier rib and the inner wall of the evaporation chamber m and move toward the orifice 13 〇. A second heater 170 that supplies heat to the evaporation chamber 12G to prevent the vaporized source material passing through the evaporation chamber 12A from becoming liquid or solid is installed on the top and sides of the evaporation chamber 120. Similarly, the second heater 170 may use a core heater, a lamp heater, or the like, and the second heater 170 is formed in such a manner that the resistance heating wire is disposed in parallel with the (four) of the evaporation chamber 12G. An alloy that may contain Ta, w, MO or more. The second heater m prevents the evaporation source material from adhering to the substrate 1 〇 15 201244223 but attaching and clogging the nozzle hole 13 。. The evaporated source material 1 held in the evaporation chamber accumulates on one side of the orifice 110 and thus causes the phase to become solid and block the orifice 13〇. Therefore, the second heater 17 raises the temperature around the orifice 130 so that the source material around the orifice 13 is always maintained in a vaporized state. As described above, the large-capacity deposition apparatus for forming a thin film according to an exemplary embodiment of the present invention includes a plurality of source containers to disperse the amount of the source material contained in the source container so that the heat required to heat the source material can be reduced The amount is to prevent denaturation of the source material contained in the source container, and the evaporation rate of the source material from the plurality of source containers can be accelerated to speed up the deposition of the film on the substrate. Further 'in a large-capacity deposition apparatus for forming a thin film according to an exemplary embodiment of the present invention, 'the evaporation from the source container is controlled by adjusting the distance between the source container and the first heater or the temperature of the first heater The amount of source material is such that the amount of material that has been evaporated is stably maintained. Further, the 'large-capacity deposition apparatus for forming a thin film according to an exemplary embodiment of the present invention prevents source material or foreign material sputtered upward from the source container from adhering to the orifice' and makes long-time without suspending production Continuous production is possible. Further, in the large-capacity deposition apparatus for forming a thin film according to an exemplary embodiment of the present invention, heat is directly transferred from the first heater to the source container without a medium so that the first heater can be used The temperature control quickly completes the temperature reaction of the source material in the source container; the desired target temperature of the source material 16 201244223 for the source container can be continuously maintained without major changes; and the source material can be vaporized stably, This completes uniform deposition and large area deposition. Further, in the large-capacity deposition apparatus for forming a film according to an exemplary embodiment of the present invention, the second heater for supplying heat to the evaporation chamber is on the top of the evaporation chamber so as to prevent evaporation The vaporized source material phase of the chamber becomes liquid or solid, and can prevent the vaporized source material that is not deposited on the substrate from adhering and clogging the orifice. Fig. 2 is a schematic view of a large-capacity deposition apparatus for forming a film according to a second exemplary embodiment of the present invention. Referring to Fig. 2, a trough deposition apparatus 200 for forming a thin film according to the present exemplary embodiment is characterized in that a plurality of sensors 25A are respectively mounted in the source container 110. In Fig. 2, elements have the same configurations and functions as those of elements denoted by the same numerals shown in Fig. J. Therefore, detailed descriptions of the elements will be omitted. It is used for a plurality of sensings 250 to be separately installed into the source container 11 。. Here, the sensor 250 senses the amount of evaporated source material flowing out of the source container 10 . The controller 260 obtains feedback from the sensor 250 regarding the amount of evaporated source material in the source container and controls the amount of source material evaporated from the source container i10. Based on the amount of evaporated source material sensed by the sensor 250, the temperature of the first heater 140 and the operating direction or transfer speed of the transport unit 丨7〇 are controlled, thereby adjusting the amount of material that has been evaporated. At this time, a sensor 250 is mounted in each of the source containers 11A so that the controller 260 can individually control the plurality of transfer units 17A. 17 201244223 Since one sensor 250 is installed in each source container 110, the presence controller 260 can adjust various options for the amount of material of the evaporation source. That is, if the plurality of source containers 110 are completely lacking in evaporation amount, the controller 260 may raise the temperature of the first heater 14A or simultaneously control the plurality of transfer units 17A to shorten the relationship between the source material and the first heater. distance. On the other hand, if a certain source container 〇1 〇 lacks evaporation amount, the controller 260 can control only the transfer unit 170 coupled to the corresponding source container 110 without changing the temperature of the first heater 14 ,, thereby shortening The distance between the source material and the first heater 140. In the large-capacity deposition apparatus for forming a thin film having the aforementioned configuration, the sensor is installed in each of the source containers, and there are various options that the controller can control the amount of the evaporation source material, thereby maintaining uniformity in the source container The amount of evaporation has an effect. Fig. 3 is a schematic view of a large tantalum deposition apparatus for forming a film in accordance with a third exemplary embodiment of the present invention. Referring to Fig. 3, a conventional deposition apparatus 3 for forming a thin film according to the present exemplary embodiment is characterized in that a plurality of heaters 34 are mounted in the source container 110, respectively. In Fig. 3, the elements have the same configurations and functions as those of the elements mentioned in the same numerals as shown in Fig. i, and thus detailed descriptions of the elements will be omitted. A plurality of heaters 340 are provided to be installed in the source container u〇, respectively. Here, the heater 340 is disposed above the cooler 146 while surrounding the outer circumference of the source container 110. The controller 260 obtains 18 201244223 feedback from the sensor 150 installed in the evaporation chamber 120 about the amount of evaporated source material in the source container 110 and controls the amount of source material evaporated from the source container 110. At this time, the sensor 15 for sensing the evaporation amount of the source material is installed in the evaporation chamber 120, so that the controller 360 can simultaneously control the plurality of transfer units 170 and control the plurality of first heaters 340 individually and independently. . If the evaporation chamber 120 lacks the evaporation amount of the source material in the evaporation chamber 120, the controller 360 may raise the temperature of each of the first heaters 340 or simultaneously control the plurality of transfer units 170 to shorten the source material and the first heater 3. The distance between 40. Fig. 4 is a schematic view of a large-capacity deposition apparatus for forming a film according to a fourth exemplary embodiment of the present invention. Referring to Fig. 4', the large-capacity deposition apparatus 400 for forming a thin film according to the present exemplary embodiment is characterized in that a plurality of heaters 440 and a plurality of sensors 450 are respectively mounted in the source container 1A. In Fig. 4, the elements have the same configurations and functions as those of the elements mentioned in the same numerals shown in Fig. 1, and thus detailed descriptions of the elements will be omitted. A plurality of heaters 440 are provided to be mounted in the source container 11A, respectively, and disposed above the cooler 146 while surrounding the outer circumference of the source container 11''. The controller 406 obtains feedback from the sensor 450 on the amount of evaporated source material in the source container 11 and controls the amount of source material evaporated from the source container i10. At this time, a sensor 150 for sensing the evaporation amount of the source material is installed in each of the evaporation chambers 120, so that the controller 460 can individually control the plurality of transmission units 17 20124223 and individually control the plurality of sections - The heater 34 is turned on. Since the sensors 250 are respectively mounted in the source container 11A, there are various options by which the controller 460 can adjust the amount of material of the evaporation source. That is, if a plurality of source containers 11G are completely lacking in evaporation amount, the controller 46 can raise the temperature of all the first heaters 14G or simultaneously control the plurality of transfer units 170 to shorten the source material and the first heater 44A. the distance. On the other hand, if a certain source container 11 〇 lacks evaporation amount, the controller 460 may raise the temperature of the first heater 4 (10) coupled to the corresponding source container ιι or only control the transfer unit coupled to the corresponding source container 11 〇 17〇, thereby shortening the distance between the source material and the first heater 44〇. Although a few exemplary embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that modifications may be made to the embodiments without departing from the principles and spirit of the invention. The scope of the invention is defined by the patent scope and equivalents. BRIEF DESCRIPTION OF THE DRAWINGS The above and/or other aspects of the present invention will become more apparent from the following description of the exemplary embodiments of the invention. 2 is a schematic view of a large-capacity deposition apparatus for forming a thin film; FIG. 2 is a schematic view of a large-capacity deposition apparatus for forming a thin film according to a second exemplary embodiment of the present invention; FIG. 3 is a third exemplary embodiment according to the present invention. Schematic diagram of a bulk deposition apparatus for forming a thin 201244223 film of an embodiment; FIG. 4 is a schematic view of a bulk deposition apparatus for forming a thin film according to a fourth exemplary embodiment of the present invention. [Main component symbol description] 1 Source material 10 Substrate 110 Source container 120 Evaporation chamber 130 Injection hole 140 First heater 146 Cooler 150 Sensor 160 Controller 170 Transfer unit 180 Blocking plate 190 Heater 200 Large-capacity deposition device 250 Sensor 260 Controller 300 Large Capacity Deposition Device 340 Heater 400 Large Capacity Deposition Device 21 201244223 440 Heater 450 Sensor 460 Controller 22