CN112899644A - Diamond film boron oxide doping method - Google Patents
Diamond film boron oxide doping method Download PDFInfo
- Publication number
- CN112899644A CN112899644A CN202110079663.7A CN202110079663A CN112899644A CN 112899644 A CN112899644 A CN 112899644A CN 202110079663 A CN202110079663 A CN 202110079663A CN 112899644 A CN112899644 A CN 112899644A
- Authority
- CN
- China
- Prior art keywords
- boron oxide
- boron
- containers
- diamond film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052810 boron oxide Inorganic materials 0.000 title claims abstract description 38
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 38
- 239000010432 diamond Substances 0.000 title claims abstract description 38
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000000843 powder Substances 0.000 claims abstract description 18
- 238000002309 gasification Methods 0.000 claims abstract description 9
- 238000002360 preparation method Methods 0.000 claims abstract description 4
- 238000010438 heat treatment Methods 0.000 claims abstract 2
- 238000007740 vapor deposition Methods 0.000 claims abstract 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 15
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 15
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 13
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- 238000000227 grinding Methods 0.000 claims description 3
- 150000002431 hydrogen Chemical class 0.000 claims description 3
- 230000006911 nucleation Effects 0.000 claims description 3
- 238000010899 nucleation Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 238000002203 pretreatment Methods 0.000 claims 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 16
- 229910052796 boron Inorganic materials 0.000 abstract description 15
- 238000005137 deposition process Methods 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000004050 hot filament vapor deposition Methods 0.000 description 3
- 239000011812 mixed powder Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000010000 carbonizing Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000009972 noncorrosive effect Effects 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010865 sewage Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/271—Diamond only using hot filaments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
Abstract
The invention discloses a boron oxide doping method for a diamond film, which is characterized in that when a hot wire vapor deposition method is adopted to prepare the boron-doped diamond film, a plurality of containers with equal opening areas are uniformly arranged on the periphery of a substrate platform, boron oxide powder is placed in the containers, and the boron oxide powder in the containers is heated to form high-temperature gasification during the heating of a hot wire, so that the preparation of the boron-doped diamond film is realized. According to the invention, the plurality of containers with the same opening area are arranged on the periphery of the substrate platform, the boron oxide powder is contained in the containers, the quantity of the boron oxide participating in gasification can be controlled by controlling the quantity of the contained powder, and the distance between the boron oxide and the hot wire can be controlled by adopting the hollow vertical pipes with different heights as the containers, so that the contact temperature of the boron oxide is controlled, the gasification speed of the boron oxide is indirectly adjusted, a proper height and quantity are selected, and the boron doping concentration is controlled under the condition of certain other conditions, so that the boron is uniformly and efficiently doped in the deposition process.
Description
Technical Field
The invention relates to the technical field of hot wire chemical vapor deposition, and particularly provides a diamond film boron oxide doping method.
Background
Compared with the traditional electrode material, the boron-doped diamond electrode not only keeps the characteristics of high thermal conductivity, stability, high temperature resistance and the like of diamond, but also has a wider electrochemical window, low background current, adsorption inertia and the like. The boron-doped diamond electrode enables pure diamond to become a semiconductor, has stable electrochemical characteristics, has a wider potential window and lower background current, is not easy to adsorb organic matters or biological compounds, is resistant to acid and alkali corrosion, and has a self-cleaning function. Therefore, boron-doped diamond electrodes are widely used in the electrochemical field, wherein the boron-doped diamond electrodes are most widely studied in the sewage treatment field.
There are generally three common boron doping regimes: solid, liquid and gaseous boron sources, wherein liquid boron-containing substances are generally corrosive, and gaseous boron compounds are often toxic, so that non-toxic and non-corrosive solid boron doping modes have entered the research field.
CN201910925306.0 discloses a method for preparing boron-doped diamond by using a solid-state doping source, which aims to solve the problems that the gas boron source is unsafe and corrosive to equipment in the existing preparation method of the boron-doped diamond film. The invention discloses: firstly, preparing a doping source: grinding and mixing graphite powder and a boron source to obtain mixed powder, then putting the mixed powder into a tablet press, and pressing the mixed powder into a wafer or a square slice to obtain a solid-state doping source; the atomic ratio of boron element in the boron source to carbon element in the graphite powder is (0.001-0.1): 1; the boron source is boron powder or boron oxide powder; secondly, preparing the boron-doped diamond film: placing a substrate and a plurality of solid-state doping sources on a sample platform of a microwave plasma chemical vapor deposition device, uniformly distributing the plurality of solid-state doping sources on the periphery of the substrate, introducing hydrogen or mixed gas of the hydrogen and other gases, depositing for 30 min-50 h under the conditions that the hydrogen flow rate is 50 sccm-300 sccm, the substrate temperature is 400-1100 ℃, the solid-state doping source temperature is 600-1200 ℃, the pressure is 80 mbar-500 mbar and the microwave power is 1500-6000W, and growing a boron-doped diamond film on the surface of the substrate to obtain the substrate with the boron-doped diamond film growing on the surface, thereby completing the method for preparing the boron-doped diamond by using the solid-state doping sources.
Since the hot wire chemical vapor deposition (HFCVD) method has simple equipment, is easy to operate, and can grow high-quality diamond films at a high rate, the method is widely adopted so far, but the boron doping amount is difficult to control, so that the method is difficult to put into production on a large scale.
Disclosure of Invention
The technical task of the invention is to provide a diamond film boron oxide doping method aiming at the problems.
A boron oxide doping method for diamond film is characterized by that when the boron-doped diamond film is prepared by hot-wire vapour deposition method, several containers with same opening area are uniformly set on the periphery of substrate platform, the boron oxide powder is placed in the container, and when the hot wire is heated, the boron oxide powder in the container is heated to form high-temp. gasification so as to implement preparation of boron-doped diamond film.
The method realizes the control of the boron oxide doping concentration by setting the number of the containers. Since the area of the opening is determined, the surface area of the boron oxide participating in the gasification can be controlled by setting the number of the containers.
The container is a hollow vertical pipe, and the temperature of the boron oxide is adjusted by setting the height of the hollow vertical pipe, so that the gasification concentration of the boron oxide is adjusted.
The method comprises the following implementation steps:
1) selecting a substrate, and pretreating the substrate;
2) a plurality of hollow vertical pipes with equal opening area are uniformly arranged on the periphery of the substrate platform
3) Placing boron oxide powder in the vertical pipe;
4) electrifying and pressurizing, introducing carbon-containing gas, and entering nucleation and growth processes.
The substrate is made of titanium or silicon. The mismatching degree of silicon and diamond is small, a sound field BDD film is easy to be extended on the silicon in an epitaxial mode, and the Si/BDD electrode has good electrochemical characteristics, so that the silicon/BDD electrode is a substrate blank material which is most applied; the titanium has low cost and high mechanical strength, and can generate TiO if part of the diamond film falls off2The advantage of self-protection of the electrodes is achieved and is therefore appreciated.
The pretreatment process comprises cleaning and grinding. The surface of the substrate is uniformly ground by diamond powder and ultrasonically cleaned in deionized water, so that the nucleation and growth of the diamond on the surface of the substrate are facilitated.
The material of the hot wire is tungsten or tantalum. The temperature of the tungsten filament is generally 2000-2200 ℃, the maximum temperature of the tantalum filament can reach 2400 ℃, and the tungsten filament is two common hot filaments.
The carbon-containing gas is the mixture of methane, methanol, ethanol or acetone and hydrogen, wherein the concentration of the methane, the methanol, the ethanol or the acetone in the hydrogen is 0.1-2%.
The number of the hollow stand pipes is 3-12, the height of the hollow stand pipes is 3-10 mm, and the height from the substrate platform to the top of the stand pipes is increased.
The opening area of the container is 0.5-2 mm2。
Compared with the prior art, the diamond film boron oxide doping method has the following outstanding beneficial effects:
according to the invention, the plurality of containers with the same opening area are arranged on the periphery of the substrate platform, the boron oxide powder is contained in the containers, the quantity of the boron oxide participating in gasification can be controlled by controlling the quantity of the contained powder, and the distance between the boron oxide and the hot wire can be controlled by adopting the hollow vertical pipes with different heights as the containers, so that the contact temperature of the boron oxide is controlled, the gasification speed of the boron oxide is indirectly adjusted, a proper height and quantity are selected, and the boron doping concentration is controlled under the condition of certain other conditions, so that the boron is uniformly and efficiently doped in the deposition process.
Detailed Description
The present invention will be described in further detail with reference to examples.
Example 1
A diamond film boron oxide doping method comprises the following implementation steps:
1) selecting a silicon substrate, uniformly coating diamond powder (with the diameter of 0.5 mu m) on the surface of the silicon substrate, and then ultrasonically cleaning the silicon substrate in deionized water;
2) 3 openings with the area of 2mm are uniformly arranged on the periphery of the substrate platform2A hollow riser having a height of 10 mm;
3) placing boron oxide powder in the vertical pipe;
4) tantalum wires are selected as filament heat sources, electrified and pressurized, and mixed gas of methane and hydrogen is introduced, wherein the ratio is 3: 100, carbonizing for 1 hour, nucleating for half an hour, and growing for 3 hours.
Example 2
1) Selecting a titanium substrate, uniformly coating diamond powder (with the diameter of 0.5 mu m) on the surface of the titanium substrate, and then ultrasonically cleaning the titanium substrate in deionized water;
2) the periphery of the substrate platform is uniformly provided with 12 openings with the area of 0.5mm2A hollow riser having a height of 3 mm;
3) placing boron oxide powder in the vertical pipe;
4) selecting tungsten filaments as a filament heat source, electrifying and pressurizing, introducing mixed gas of ethanol and hydrogen, wherein the ratio is 0.1: 100, carbonizing for 1 hour, nucleating for half an hour, and growing for 5 hours.
Compared with the diamond film not doped with boron, the diamond films obtained in the two embodiments are uniformly distributed, the structure is compact, and the conductivity is obviously improved. The effect of methanol or acetone is similar to ethanol or methane and is not repeated.
The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (10)
1. A boron oxide doping method for a diamond film is characterized in that when a hot wire vapor deposition method is adopted to prepare the boron-doped diamond film, a plurality of containers with equal opening areas are uniformly arranged on the periphery of a substrate platform, boron oxide powder is placed in the containers, and the boron oxide powder in the containers is heated to form high-temperature gasification when a hot wire is used for heating, so that the preparation of the boron-doped diamond film is realized.
2. The method of claim 1, wherein the boron oxide doping concentration of the diamond film is controlled by setting the number of the containers.
3. The method of claim 1 or 2, wherein the container is a hollow vertical tube, and the concentration of vaporized boron oxide is adjusted by adjusting the temperature of boron oxide by setting the height of the hollow vertical tube.
4. The boron oxide doping method for diamond film according to claim 3, wherein the method comprises the following steps:
1) selecting a substrate, and pretreating the substrate;
2) a plurality of hollow vertical pipes with equal opening area are uniformly arranged on the periphery of the substrate platform
3) Placing boron oxide powder in the vertical pipe;
4) electrifying and pressurizing, introducing carbon-containing gas, and entering nucleation and growth processes.
5. The method of claim 3, wherein the substrate is made of titanium or silicon.
6. The method of claim 3, wherein the pre-treatment comprises cleaning and grinding.
7. The method of claim 3, wherein the hot wire is made of tungsten or tantalum.
8. The method of claim 3, wherein the carbon-containing gas is a mixture of methane, methanol, ethanol, or acetone and hydrogen, and the concentration of methane, methanol, ethanol, or acetone in hydrogen is 0.1-2%.
9. The method of claim 3, wherein the number of the hollow vertical tubes is 3 to 12, and the height of the hollow vertical tubes is 3 to 10 mm.
10. The method of claim 1 or 2, wherein the opening area of the container is 0.5-2 mm2。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110079663.7A CN112899644A (en) | 2021-01-21 | 2021-01-21 | Diamond film boron oxide doping method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110079663.7A CN112899644A (en) | 2021-01-21 | 2021-01-21 | Diamond film boron oxide doping method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112899644A true CN112899644A (en) | 2021-06-04 |
Family
ID=76117736
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110079663.7A Pending CN112899644A (en) | 2021-01-21 | 2021-01-21 | Diamond film boron oxide doping method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112899644A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115418622A (en) * | 2022-09-21 | 2022-12-02 | 山东欣远新材料科技有限公司 | Boron-doped diamond electrode and preparation method and preparation device thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1598443A2 (en) * | 2004-05-21 | 2005-11-23 | National Institute for Materials Science | Superconductivity in boron-doped diamond thin film |
| CN101962757A (en) * | 2009-03-27 | 2011-02-02 | 罗门哈斯电子材料有限公司 | Film forming method and apparatus on base material |
| CN102732843A (en) * | 2011-04-13 | 2012-10-17 | 韩商Snu精密股份有限公司 | High-capacity deposition device for forming a thin film |
| CN103058331A (en) * | 2012-12-04 | 2013-04-24 | 江苏丰山集团有限公司 | Process for treating wastewater containing pyridin alcohol sodium by adopting BDD (boron-doped diamond) film electrode |
-
2021
- 2021-01-21 CN CN202110079663.7A patent/CN112899644A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1598443A2 (en) * | 2004-05-21 | 2005-11-23 | National Institute for Materials Science | Superconductivity in boron-doped diamond thin film |
| CN101962757A (en) * | 2009-03-27 | 2011-02-02 | 罗门哈斯电子材料有限公司 | Film forming method and apparatus on base material |
| CN102732843A (en) * | 2011-04-13 | 2012-10-17 | 韩商Snu精密股份有限公司 | High-capacity deposition device for forming a thin film |
| CN103058331A (en) * | 2012-12-04 | 2013-04-24 | 江苏丰山集团有限公司 | Process for treating wastewater containing pyridin alcohol sodium by adopting BDD (boron-doped diamond) film electrode |
Non-Patent Citations (1)
| Title |
|---|
| 刘应亮: "《无机材料学基础》", 31 August 1999 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115418622A (en) * | 2022-09-21 | 2022-12-02 | 山东欣远新材料科技有限公司 | Boron-doped diamond electrode and preparation method and preparation device thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101397654B (en) | Hot filament and heat evaporation vapor deposition membrane equipment | |
| US6755151B2 (en) | Hot-filament chemical vapor deposition chamber and process with multiple gas inlets | |
| KR20010091389A (en) | Method for depositing a vertically aligned carbon nanotubes using thermal chemical vapor deposition | |
| CN104962876B (en) | Graphite surface boron-doped diamond film material and preparation method thereof | |
| US20030138561A1 (en) | Thermal cracking chemical vapor deposition method for synthesizing nano-carbon material | |
| CN108588679A (en) | Atomic layer deposition prepares W and adulterates Al2O3The method of high resistance film | |
| CN102849733A (en) | Low-temperature direct preparation method of graphene under double-temperature-zone control, and double-temperature-zone tube furnace | |
| CN105755448A (en) | Nano diamond thin film and preparation method thereof | |
| CN110028058A (en) | A kind of nitrogen mixes grapheme material and preparation method thereof | |
| CN112899644A (en) | Diamond film boron oxide doping method | |
| CN101397655B (en) | Chemical vapor deposition equipment for material preparation | |
| CN105624642A (en) | Method for directly depositing diamond film on graphite substrate | |
| CN102534570A (en) | Method for preparing microcrystalline silicon film by plasma-enhanced chemical vapor deposition | |
| CN108950518A (en) | A kind of sub- thin film of titanium oxide preparation method based on technique for atomic layer deposition | |
| Liu et al. | Morphologies and growth mechanisms of zirconium carbide films by chemical vapor deposition | |
| CN2820878Y (en) | Gas depositing thin film device of plasma reinforced heat wire chemistry | |
| JPS62202897A (en) | Production of diamond | |
| JPH05254808A (en) | Preparation of boron nitride | |
| CN101819884B (en) | Method for preparing porous carbon thin film material used for supercapacitor electrode | |
| CN1304631C (en) | Technology for preparing nano tube of carbon by direct current glow plasma chemical vapour phase deposition process | |
| CN108588680A (en) | Atomic layer deposition prepares Mo and adulterates Al2O3The method of high resistance film | |
| CN201826011U (en) | Water vapor expanding device for growth of oxide semiconductor thin film | |
| JPH0725636B2 (en) | Method for manufacturing semiconductor diamond | |
| CN111676466A (en) | A water conservancy diversion formula sample holds in palm and system for MPCVD system | |
| JP2006176811A (en) | METHOD FOR PRODUCING CRYSTALLINE SiC FILM |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20231031 Address after: 344600 Ceramic Industrial Park, Lichuan County, Fuzhou City, Jiangxi Province Applicant after: Jiangxi Xinyuan New Material Technology Co.,Ltd. Applicant after: Sinoma intraocular lens Research Institute (Shandong) Co.,Ltd. Applicant after: Shandong Xinyuan New Material Technology Co.,Ltd. Address before: 250200 crystal building A15, shuangchuang base, 7888 Jingshi East Road, Shuangshan street, Zhangqiu City, Jinan City, Shandong Province Applicant before: Shandong Xinyuan New Material Technology Co.,Ltd. Applicant before: Sinoma intraocular lens Research Institute (Shandong) Co.,Ltd. |