CN111676466A - A water conservancy diversion formula sample holds in palm and system for MPCVD system - Google Patents
A water conservancy diversion formula sample holds in palm and system for MPCVD system Download PDFInfo
- Publication number
- CN111676466A CN111676466A CN202010692712.XA CN202010692712A CN111676466A CN 111676466 A CN111676466 A CN 111676466A CN 202010692712 A CN202010692712 A CN 202010692712A CN 111676466 A CN111676466 A CN 111676466A
- Authority
- CN
- China
- Prior art keywords
- flow
- sample
- diamond
- sample holder
- flow guide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000259 microwave plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title description 3
- 239000010432 diamond Substances 0.000 claims abstract description 77
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 77
- 230000007547 defect Effects 0.000 abstract description 7
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000010431 corundum Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 210000003709 heart valve Anatomy 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000005445 natural material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a gas-guiding type sample holder for an MPCVD system, which comprises: the sample holder body is horizontally placed in the reaction cavity, and a gas inlet for introducing gas flow is formed in the center above the sample holder body; the lower part of the sample support body is cylindrical, the upper part of the sample support body comprises a flow baffle and a flow guide platform which are coaxially arranged, and the flow baffle is positioned on the outer side and is a circular ring body. The flow guide table is a circular table body with a small upper part and a big lower part; the upper surface of the flow guide table is horizontal and is used for placing a diamond sample; the diameter of the lower end of the flow guide table is the same as that of the inner ring of the flow baffle plate, and the height of the flow guide table meets the following conditions: when the diamond sample is placed on the flow guide table, the upper surface of the diamond sample does not exceed the upper surface of the flow baffle. The bottom of the flow baffle plate is provided with a plurality of radial flow guide holes at intervals around the circumference and uniformly communicated. The sample holder provides a stable airflow environment for diamond growth, and reduces formation of defects such as diamond edge polycrystallization.
Description
[ technical field ] A method for producing a semiconductor device
The invention belongs to the technical field of diamond material growth, and particularly relates to a diversion type sample holder and a diversion type sample holder system for an MPCVD system.
[ background of the invention ]
It is well known that diamond has excellent thermal, electrical, force, optical, biological compatibility and other properties, such as high thermal conductivity, and is an excellent heat sink materialFeeding; it has a forbidden band width of 5.5eV, a breakdown voltage of more than 10MV/cm, and an electron mobility of 4500cm2(Vs) and a hole mobility of 3800cm2The material is/Vs, so that the diamond has incomparable excellent properties compared with other semiconductor materials in the aspect of electricity, and is suitable for preparing ultrahigh-frequency and ultrahigh-power electronic devices; it is a natural substance with the highest known hardness, which is 1170 and 140 times of the hardness of quartz and corundum respectively, and is used in the cutting field; the transparent glass has high permeability from near ultraviolet to far infrared wave bands, and can be used as a window material; it has good chemical stability, acid and alkali corrosion resistance, and no obvious rejection reaction with carbon-based organisms, and can be used as a substitute of heart valves. Therefore, diamond has great application potential and is gradually the hot spot of scientific research.
There are many methods for growing diamond, such as hot filament chemical vapor deposition, high temperature and high pressure, Microwave Plasma Chemical Vapor Deposition (MPCVD), among which MPCVD is most widely used because it grows diamond with less impurities and high quality. The gas source (methane, hydrogen, oxygen, nitrogen, etc.) needed by the growth of the diamond is introduced from the upper part of the diamond sample and flows through the surface and the side wall of the diamond to realize the growth of the diamond.
When the MPCVD method is adopted to grow the diamond, a sample holder is inevitably needed to be used, the diamond is placed on the sample holder, and then the sample holder is placed on a sample table. The material, structure, size and the like of the sample holder directly influence the quality of the diamond growth result. Experiments have proved that the groove support is most beneficial to diamond growth, but simulation results show that the groove support has serious defects at the same time, namely that the airflow at the diamond side wall is very disordered, which causes the diamond growth to be in an extremely unstable environment, and finally, the diamond side wall has defects of polycrystal and the like.
[ summary of the invention ]
The invention aims to provide a flow guide type sample holder and a flow guide type sample holder system for an MPCVD system.
The invention adopts the following technical scheme: a gas-conducting sample holder for an MPCVD system, comprising: the sample holder body is horizontally placed in the reaction cavity, and a gas inlet for introducing gas flow is formed in the center above the sample holder body; the lower part of the sample support body is cylindrical, the upper part of the sample support body comprises a flow baffle and a flow guide platform which are coaxially arranged, and the flow baffle is positioned on the outer side and is a circular ring body.
The flow guide table is a circular table body with a small upper part and a big lower part; the upper surface of the flow guide table is horizontal and is used for placing a diamond sample; the diameter of the lower end of the flow guide table is the same as that of the inner ring of the flow baffle plate, and the height of the flow guide table meets the following conditions: when the diamond sample is placed on the flow guide table, the upper surface of the diamond sample does not exceed the upper surface of the flow baffle.
A plurality of radial flow guide holes are formed at the bottom of the flow baffle at intervals around the circumference and are uniformly communicated; each water conservancy diversion hole is used for: and guiding the airflow out of the sample holder body after flowing through the gas inlet, the surface of the diamond sample and the side wall of the flow guide table.
Furthermore, the included angle between the side wall of the flow guide table and the horizontal plane is alpha, and the value range of alpha is 20-80 degrees.
Furthermore, the inner diameter of each flow guide hole is 1 mm-10 mm.
Further, the lower part of the cylinder of the sample support body, the flow baffle plate and the flow guide table are all integrated structures which are coaxially arranged.
Further, the flow guide holes are arranged in one row or a plurality of rows which are uniformly distributed from top to bottom.
The invention also discloses an MPCVD system, which comprises the gas-guide type sample holder for the MPCVD system.
The invention has the beneficial effects that: the air current flows downwards along the side wall of the flow guide table, and flows out from the bottom in the radial direction through the flow guide holes, and the air can not form a vortex at the bottom, so that the gas is prevented from forming a disordered air current environment in the circumferential direction of the diamond, and the formation of defects of polycrystalline diamond edges and the like is reduced.
[ description of the drawings ]
FIG. 1 is a schematic diagram of a conventional sample holder structure;
FIG. 2 is a schematic diagram of a flow-guided sample holder that can be used in an MPCVD system;
FIG. 3 is an enlarged partial view of a deflector-type sample holder that can be used in an MPCVD system;
FIG. 4 is a top view of a deflector-type sample holder that can be used in an MPCVD system;
wherein: 1. a sample stage; 2. a sample holder body; 3. a flow guide table; 4. a flow guide hole; 5. a diamond sample; 6. air flow, 7, baffle plate, 8, conventional sample holder.
[ detailed description ] embodiments
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
The invention relates to a gas-guiding type sample holder for an MPCVD system, which comprises: the sample holder body 2 is horizontally placed in the reaction cavity, and a gas inlet for introducing the gas flow 6 is formed in the center above the sample holder body 2; the lower part of the sample support body 2 is cylindrical, the upper part of the sample support body comprises a flow baffle 7 and a flow guide table 3 which are coaxially arranged, and the flow baffle 7 is positioned on the outer side and is a circular ring body. The gas flow 6 is a microwave plasma gas flow.
The flow guide table 3 is a circular table body with a small upper part and a big lower part; the upper surface of the flow guide table 3 is horizontal and is used for placing a diamond sample 5; the diameter of the lower end of the flow guide table 3 is the same as that of the inner ring of the flow baffle 7, and the height of the flow guide table 3 meets the following conditions: when the diamond sample 5 is placed on the flow guide table 3, the upper surface of the diamond sample 5 does not exceed the upper surface of the flow baffle 7.
A plurality of radial flow guide holes 4 are formed at the bottom of the flow baffle 7 at intervals around the circumference and are uniformly communicated; each flow guide hole 4 is used for: the air flow 6 flows through the air inlet, the surface of the diamond sample 5 and the side wall of the diversion table 3 and then is led out of the sample holder body 2.
The included angle between the side wall of the diversion table 3 and the horizontal plane is alpha, and the value range of alpha is 20-80 degrees.
Each flow guide hole 4 can be a circular hole, a square hole or other lattice or irregularly-shaped holes, the hole diameter cannot be too large no matter which form of hole is adopted, and equipotential surfaces in an electric field on the upper portion of the hole are not fluctuated greatly when microwave plasma is guided out. When the holes are round holes, the inner diameter of each flow guide hole 4 is 1 mm-10 mm. In order to discharge the gas quickly, the diversion holes 4 are arranged in a row or a plurality of rows which are distributed evenly from top to bottom.
The lower part of the cylinder of the sample support body 2, the flow baffle 7 and the flow guide table 3 are coaxially arranged and are of an integrated structure.
The invention also discloses an MPCVD system, which comprises the gas-guide type sample holder for the MPCVD system.
The invention also discloses an MPCVD system, which comprises the gas-guide type sample holder for the MPCVD system. The sample holder is horizontally placed on the sample table 1, the sample holder and the sample table are both arranged in the reaction cavity, the reaction cavity is a closed space, and the internal environment of the reaction cavity is a growth environment of the microwave plasma diamond film.
The diamond sample 5 is placed in the center of the sample holder body 2, the airflow 6 flows downwards from the upper part of the diamond sample 5, the airflow flowing through the side wall of the diamond sample 5 flows downwards along the side wall of the guide table 3, and when the airflow reaches the bottom, the flowing direction is changed and the airflow flows out from the guide holes 4 in the radial direction. The method reduces the airflow confusion of the side wall of the diamond, provides a stable airflow environment for the growth of the diamond, and reduces the formation of defects such as polycrystalline diamond edges and the like.
The sample stage 1 is made of heat-conducting material, such as red copper. The copper is chosen for the sample stage 1 because it is less resistant to temperature transfer, and the use of copper is only one of the most preferred solutions, and other materials with the same function can be used. The material of the sample holder body 2 is molybdenum, which is the metal material with the best effect for growing diamond at present.
The process of diamond growth is as follows: firstly, placing a sample support on a sample table 1, then placing a diamond sample 5 on the upper part of a sample support body 2 and at the center of the sample support body 2, and finally introducing gases required by diamond growth downwards from the upper part of the diamond sample 5 to form airflow 6 flowing through the surface and the side wall of the diamond sample 5 so as to realize the growth of diamond.
Fig. 1 shows a schematic diagram of growing a diamond by using a conventional sample holder, where the conventional sample holder 8 is a cylindrical body, an upper wall surface of the cylindrical body is provided with a groove, a bottom surface of the groove is horizontal, the diamond sample 5 is horizontally placed at the bottom of the groove, and according to the existing simulation result, airflow flows downwards from above the diamond, flows towards the upper wall and the circumferential direction of the diamond sample 5 until reaching the bottom of the concave cavity, and is blocked by the bottom, the airflow generates vortex, and part of the airflow returns upwards and collides with the downward airflow, and the airflow in each direction is present, so that the airflow in the circumferential direction of the diamond is very disordered, and the diamond is in an unstable growth environment, and the diamond edge grows polycrystal and other defects.
In the process of diamond growth, airflow is required to be continuously provided through airflow, and atoms and molecules contained in the airflow are raw materials required by diamond growth. When the airflow is stable, the direction and the flow rate of the airflow are stable, atoms and molecules reach the growth surface of the diamond in the stable direction and the stable flow rate, the arrangement of carbon atoms of the newly grown diamond is regular and uniform, and the newly grown diamond is ensured to be a single crystal diamond. When the airflow is unstable, such as after forming a vortex, atoms or molecules for diamond growth reach the diamond growth surface in different directions and flow rates, which easily causes the irregular and non-uniform arrangement of carbon atoms of newly grown diamond, and further grows diamond with different crystal phases, namely polycrystalline diamond, which is particularly serious when the diamond is grown by using an unmodified sample holder, and particularly, a large amount of polycrystal is generated on the edge and side surface of the sample, thus seriously affecting the epitaxial growth of the single crystal diamond.
The process of the sample holder in the invention is shown in fig. 2, 3 and 4, the bottom of the sample holder is horizontally placed on the sample platform 1, the sample holder and the sample holder are both horizontally arranged in the reaction cavity, microwave plasma airflow is introduced from the gas inlet, the environment in the reaction cavity meets the conditions of diamond growth, the airflow is introduced into the upper wall of the diamond sample 5, downwards along the side wall of the diamond sample 5, continuously downwards along the side wall of the guide platform 3, radially flows into the guide holes 4 at the bottom and is guided out through the guide holes 4. Because the flow guide table 3 is a circular truncated cone body, when air flows through the side wall of the circular truncated cone body, the air flows down along the side wall along the same potential, namely, a buffer is provided, vortex cannot be formed at the bottom, and the air flow is radially guided out through the flow guide holes 4, so that the situation that the air flow 6 is reversed at the bottom is avoided, the diamond side wall is ensured to be positioned in a stable air flow environment, a stable environment is provided for the growth of diamond, and the formation of defects of diamond edge polycrystal and the like is inhibited.
Claims (6)
1. A gas-conducting sample holder for an MPCVD system, comprising:
the sample holder body (2) is horizontally placed in the reaction cavity, and a gas inlet for introducing gas flow (6) is formed in the center above the sample holder body (2); the lower part of the sample support body (2) is cylindrical, the upper part of the sample support body comprises a flow baffle plate (7) and a flow guide table (3) which are coaxially arranged, and the flow baffle plate (7) is positioned on the outer side and is a circular ring body;
the flow guide table (3) is a round table body with a small upper part and a large lower part; the upper surface of the flow guide table (3) is horizontal and is used for placing a diamond sample (5); the diameter of the lower end of the flow guide table (3) is the same as that of the inner ring of the flow baffle plate (7), and the height of the flow guide table (3) meets the following conditions: when the diamond sample (5) is placed on the flow guide table (3), the upper surface of the diamond sample (5) does not exceed the upper surface of the flow baffle plate (7);
a plurality of radial flow guide holes (4) are formed at the bottom of the flow baffle (7) at intervals around the circumference and are uniformly communicated; each diversion hole (4) is used for: and (3) leading the air flow (6) out of the sample holder body (2) after flowing through the air inlet, the surface of the diamond sample (5) and the side wall of the flow guide table (3).
2. The gas-guide type sample holder for the MPCVD system according to claim 1, wherein the included angle between the side wall of the flow-guide table (3) and the horizontal plane is α, and the value range of α is 20-80 °.
3. The gas-guide type sample holder for the MPCVD system according to claim 1 or 2, wherein the inner diameter of each flow-guide hole (4) is 1mm to 10 mm.
4. The gas-guiding sample holder for MPCVD system according to claim 1 or 2, wherein the lower cylindrical portion of the sample holder body (2), the baffle plate (7) and the flow-guiding table (3) are coaxially arranged and formed as a single structure.
5. The gas guide type sample holder for the MPCVD system according to claim 1 or 2, wherein the flow guide holes (4) are arranged in a row or a plurality of rows uniformly distributed from top to bottom.
6. An MPCVD system, comprising a gas-conducting sample holder for an MPCVD system as claimed in any one of claims 1 to 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010692712.XA CN111676466A (en) | 2020-07-17 | 2020-07-17 | A water conservancy diversion formula sample holds in palm and system for MPCVD system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010692712.XA CN111676466A (en) | 2020-07-17 | 2020-07-17 | A water conservancy diversion formula sample holds in palm and system for MPCVD system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111676466A true CN111676466A (en) | 2020-09-18 |
Family
ID=72457806
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010692712.XA Pending CN111676466A (en) | 2020-07-17 | 2020-07-17 | A water conservancy diversion formula sample holds in palm and system for MPCVD system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111676466A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113417007A (en) * | 2021-06-23 | 2021-09-21 | 秦皇岛本征晶体科技有限公司 | Method for controlling diamond deposition rate based on airflow system structure |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000077337A (en) * | 1998-08-31 | 2000-03-14 | Toshiba Corp | Gas treatment device and method |
| JP2000138199A (en) * | 1998-11-04 | 2000-05-16 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus |
| JP2011148658A (en) * | 2010-01-22 | 2011-08-04 | Hitachi Zosen Corp | Thermal cvd apparatus |
| CN103668127A (en) * | 2013-12-10 | 2014-03-26 | 北京科技大学 | Domical microwave plasma chemical vapor deposition diamond film device |
| CN210790612U (en) * | 2019-10-10 | 2020-06-19 | 柘城县华鑫超硬磨料磨具有限公司 | Diamond grinding wheel |
| CN212713747U (en) * | 2020-07-17 | 2021-03-16 | 西安德盟特半导体科技有限公司 | A water conservancy diversion formula sample holds in palm and MPCVD system for MPCVD system |
-
2020
- 2020-07-17 CN CN202010692712.XA patent/CN111676466A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000077337A (en) * | 1998-08-31 | 2000-03-14 | Toshiba Corp | Gas treatment device and method |
| JP2000138199A (en) * | 1998-11-04 | 2000-05-16 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus |
| JP2011148658A (en) * | 2010-01-22 | 2011-08-04 | Hitachi Zosen Corp | Thermal cvd apparatus |
| CN103668127A (en) * | 2013-12-10 | 2014-03-26 | 北京科技大学 | Domical microwave plasma chemical vapor deposition diamond film device |
| CN210790612U (en) * | 2019-10-10 | 2020-06-19 | 柘城县华鑫超硬磨料磨具有限公司 | Diamond grinding wheel |
| CN212713747U (en) * | 2020-07-17 | 2021-03-16 | 西安德盟特半导体科技有限公司 | A water conservancy diversion formula sample holds in palm and MPCVD system for MPCVD system |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113417007A (en) * | 2021-06-23 | 2021-09-21 | 秦皇岛本征晶体科技有限公司 | Method for controlling diamond deposition rate based on airflow system structure |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111424319B (en) | Preparation method of large-size kilogram-level silicon carbide single crystal | |
| CN108315816B (en) | Single crystal diamond film method and apparatus | |
| KR20010024730A (en) | Growth of very uniform silicon carbide epitaxial layers | |
| US8197595B2 (en) | Method and device for producing thin silicon rods | |
| CN215560802U (en) | Substrate table bearing device for preparing single crystal diamond through MPCVD | |
| CN107140681B (en) | β-Ga2O3The preparation method of micro belt | |
| CN108707966A (en) | A kind of low nitrogen content SiC single crystal grower and its application | |
| CN215856452U (en) | Single crystal diamond substrate table based on microwave plasma chemical vapor deposition | |
| CN212713747U (en) | A water conservancy diversion formula sample holds in palm and MPCVD system for MPCVD system | |
| CN111676466A (en) | A water conservancy diversion formula sample holds in palm and system for MPCVD system | |
| CN108103569A (en) | A kind of crucible device by physical vapor transport growing aluminum nitride monocrystalline | |
| CN113151895A (en) | Large-diameter high-purity semi-insulating silicon carbide growth process | |
| WO2021196341A1 (en) | Substrate table for growing single crystal diamonds by using microwave plasma technology and growing method | |
| EP2431327A1 (en) | Method and apparatus for producing large particle diamond | |
| CN216514120U (en) | Substrate table for preparing diamond film based on MPCVD method | |
| CN212640659U (en) | Epitaxial seed crystal of single crystal diamond holds in palm | |
| CN208717470U (en) | A kind of low nitrogen content SiC single crystal grower | |
| CN214992009U (en) | Airflow system structure for controlling diamond deposition rate | |
| WO2021128643A1 (en) | Semiconductor silicon material consumable growth furnace and preparation method for silicon material | |
| CN111020699A (en) | Substrate table for improving growth speed of microwave plasma growth single crystal diamond | |
| CN213951415U (en) | Substrate table for growing single crystal diamond by microwave plasma technology | |
| CN111235631A (en) | Multi-seed-crystal crucible device for crystal preparation based on physical vapor transport method | |
| CN115974587A (en) | Improved graphite crucible and preparation method and application thereof | |
| CN111029250A (en) | Method for realizing SiC epitaxial curve-shaped doping distribution | |
| CN113417007A (en) | Method for controlling diamond deposition rate based on airflow system structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20201216 Address after: Room 11403, unit 1, building 1, No. 11, Tangyan South Road, hi tech Zone, Xi'an City, Shaanxi Province Applicant after: Xi'an te te Semiconductor Technology Co.,Ltd. Address before: Room 1108, Songhu new town, Guangdong Province Applicant before: Guangdong damonde Semiconductor Technology Co.,Ltd. |
|
| TA01 | Transfer of patent application right |