CN108103569A - A kind of crucible device by physical vapor transport growing aluminum nitride monocrystalline - Google Patents
A kind of crucible device by physical vapor transport growing aluminum nitride monocrystalline Download PDFInfo
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- CN108103569A CN108103569A CN201711482369.0A CN201711482369A CN108103569A CN 108103569 A CN108103569 A CN 108103569A CN 201711482369 A CN201711482369 A CN 201711482369A CN 108103569 A CN108103569 A CN 108103569A
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- crucible
- seed crystal
- aluminum nitride
- cover
- heating cover
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 44
- 239000013078 crystal Substances 0.000 claims abstract description 84
- 238000010438 heat treatment Methods 0.000 claims abstract description 61
- 239000000843 powder Substances 0.000 claims abstract description 17
- 238000005192 partition Methods 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 230000012010 growth Effects 0.000 abstract description 7
- 239000012141 concentrate Substances 0.000 abstract description 3
- 230000002401 inhibitory effect Effects 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 abstract 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 12
- 229910017083 AlN Inorganic materials 0.000 description 11
- 239000007789 gas Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000691 Re alloy Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910052571 earthenware Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000001657 homoepitaxy Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- DECCZIUVGMLHKQ-UHFFFAOYSA-N rhenium tungsten Chemical compound [W].[Re] DECCZIUVGMLHKQ-UHFFFAOYSA-N 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a kind of crucible devices by physical vapor transport growing aluminum nitride monocrystalline, including being used to placing the crucible body of aluminum nitride powder source/aluminum nitride sintered body, the crucible cover at the top of crucible body, the seed crystal platform being located at below crucible cover, the diversion heating cover below seed crystal platform in crucible body, diversion heating cover gradually radially expands downwards along the direction away from seed crystal platform, diversion heating cover is used to heat being oriented to seed crystal edge of table, and seed crystal edge of table temperature is made to be more than the central temperature of seed crystal platform.A kind of crucible device of growing aluminum nitride monocrystalline of the present invention, by setting diversion heating cover so that seed crystal edge of table temperature is higher than the central temperature of seed crystal platform, and the effective polycrystalline for inhibiting seed crystal edge of table is formed；Seed crystal platform central temperature is relatively low, for seed crystal AlN crystal growths is induced to provide advantage；Diversion heating cover makes gas concentrate toward the transmission of seed crystal platform centre, and polycrystalline around seed crystal is effectively inhibited to be formed.
Description
Technical field
The present invention relates to a kind of crucible devices by physical vapor transport growing aluminum nitride monocrystalline.
Background technology
Third generation semi-conducting material aluminium nitride（AlN）Energy gap is 6.2eV, is had in ultraviolet/deep-UV light-emitting wave band
Unique advantage is one of optimal substrate material of ultraviolet LED.Meanwhile because its higher disruptive field intensity, higher saturated electrons are drifted about
Rate and high heat conduction, capability of resistance to radiation, AlN can also meet the design requirement of high temperature/high frequency/high power electronic device,
The fields such as electronics, printing, biology, medical treatment, communication, detection, environmental protection have huge application potential.
Any liquid is almost insoluble in, and fusing point can not be obtained at 2800 DEG C or more by traditional solwution method, melt method
.Using AlN powder source material distil for 1800 DEG C or more the characteristics of, physical vapor transport can be passed through and obtain AlN bodies
Material.Temperature gradient of the method between powder source surface and growth interface makes nitrogen vapor and aluminium steam from high temperature as driving force
Area is transmitted to low-temperature space, is crystallized under micro- hypersaturated state and obtains AlN monocrystalline.
Homoepitaxy is to obtain the effective ways of high quality large scale AlN monocrystalline, the crystal planted agent grown in this way
Power is small, and defect concentration is low, but the problems such as be distributed due to seed crystal orientation, seed crystal bonding and thermal field, easily forms polycrystalline, shadow around seed crystal
Ring growth monocrystalline size and yield rate.It is calculated according to aluminum nitride crystal growth thermodynamics and kinetics, crystal growth rate
It is related with long brilliant atmosphere pressure, long brilliant temperature and the long crystalline region temperature difference.Wherein long brilliant temperature is higher, the temperature difference is bigger and volatilization deposition away from
From shorter, long crystalline substance rate is higher.And the seed crystal platform radial temperature difference and degree of supersaturation that seed crystal bonds directly affect the forming core of crystal
Quantity, smaller radial temperature difference and rational degree of supersaturation are distributed with beneficial to number of nuclei is reduced, and form the monocrystalline of high quality.And
Due to needing to remove crystal from seed crystal platform after experiment, the damage of seed crystal platform is be easy to cause, is unfavorable for the reuse of seed crystal platform, is increased
It adds and causes this, therefore the crucible device of appropriate design is most important to growing good AlN monocrystalline.
The content of the invention
The object of the present invention is to provide a kind of crucible devices by physical vapor transport growing aluminum nitride monocrystalline, pass through
Diversion heating cover is set so that seed crystal edge of table temperature is higher than the central temperature of seed crystal platform, effective to inhibit seed crystal edge of table
Polycrystalline formed；Seed crystal platform central temperature is relatively low, for seed crystal AlN crystal growths is induced to provide advantage.
In order to achieve the above objectives, the technical solution adopted by the present invention is：
A kind of crucible device by physical vapor transport growing aluminum nitride monocrystalline, including being used to place aluminum nitride powder source/nitrogen
Change the crucible body of aluminum sinter body, the crucible cover at the top of the crucible body, be located at institute in the crucible body
The seed crystal platform below crucible cover, the diversion heating cover below the seed crystal platform are stated, the diversion heating cover is along away from described
The direction of seed crystal platform gradually radially expands downwards, and the diversion heating cover is located at the aluminum nitride powder source/aluminum nitride sintered body
Top, the diversion heating cover can be used as pyrotoxin, for heat to be oriented to the seed crystal edge of table, make the seed crystal platform
Lip temperature be more than the seed crystal platform central temperature.
Preferably, gap distribution between the upper end of the diversion heating cover and the seed crystal platform.
Preferably, its circumferential direction of the lower end edge of the diversion heating cover contacts at the inside circumference of the crucible body.
Preferably, the crucible body includes the first noumenon, the second body above the first noumenon, and described the
The internal diameter of one body is less than the internal diameter of second body, and the lower end of the diversion heating cover is supported arranged on the top of the first noumenon
End.
Preferably, the diversion heating cover includes cover body, the heating for being used to heat the cover body in the cover body
Mechanism.
Preferably, the crucible device further include in the crucible body for separating the crucible cover and described
The partition plate of aluminum nitride powder source/aluminum nitride sintered body.
It is highly preferred that offering through hole on the partition plate, the seed crystal platform includes being arranged on the crucible cover and the partition plate
Between the first stage body, be connected to the second stage body being arranged in the through hole of the first stage body lower part.
Preferably, the diversion heating cover is tapered.
It is highly preferred that the cone angle of the diversion heating cover is between 20 ° -160 °.
Preferably, the thickness of the diversion heating cover is 1-10mm；The bottom of the diversion heating cover and the aluminium nitride
The distance between top of powder source/aluminum nitride sintered body is 1-10mm.
Due to the utilization of above-mentioned technical proposal, the present invention has following advantages compared with prior art：It is of the invention a kind of logical
The crucible device of physical vapor transport growing aluminum nitride monocrystalline is crossed, by setting diversion heating cover so that seed crystal edge of table
Temperature is higher than the central temperature of seed crystal platform, and the effective polycrystalline for inhibiting seed crystal edge of table is formed；Seed crystal platform central temperature is relatively
It is low, for seed crystal AlN crystal growths is induced to provide advantage；Diversion heating cover makes gas concentrate toward seed crystal platform centre biography
It is defeated, polycrystalline around seed crystal is effectively inhibited to be formed, while also inhibit gas and transmitted toward at crucible cover, solve crucible cover with
Crucible body difficult the problem of opening due to crystal bonding.
Description of the drawings
Attached drawing 1 is the structure diagram of apparatus of the present invention；
Attached drawing 2 is the structure diagram of diversion heating cover.
Wherein：1st, aluminum nitride powder source/aluminum nitride sintered body；2nd, crucible body；21st, the first noumenon；22nd, the second body；3、
Crucible cover；4th, seed crystal platform；41st, the first stage body；42nd, the second stage body；5th, diversion heating cover；6th, partition plate.
Specific embodiment
The technical solution of the present invention will be further described below with reference to the accompanying drawings.
Referring to shown in Fig. 1-2, a kind of above-mentioned crucible device by physical vapor transport growing aluminum nitride monocrystalline, including
For place aluminum nitride powder source/aluminum nitride sintered body 1 crucible body 2, arranged on the crucible cover 3 at the top of crucible body 2, arranged on earthenware
The seed crystal platform 4 for being located at 3 lower section of crucible cover in crucible body 2, the diversion heating cover 5 arranged on 4 lower section of seed crystal platform.
Aluminum nitride powder source/aluminum nitride sintered body 1 is located at the bottom of crucible body 2, and crucible cover 3 is seamless to be sheathed on crucible body
2 top；The upper surface of seed crystal platform 4 is attached at the lower surface of crucible cover 3, by this setting, seed crystal platform 4 is made to be exchanged with the external world
Heat reduces the temperature of seed crystal platform 4, and the long crystalline region temperature difference is big, is conducive to aluminium nitride gas phase and forming core and improves here and grow crystalline substance
Rate.
Diversion heating cover 5 gradually radially expands downwards along the direction away from seed crystal platform 4, and diversion heating cover 5 is located at aluminium nitride
The top of powder source/aluminum nitride sintered body 1.Diversion heating cover 5 transmits for gas to be made to concentrate toward 4 centre of seed crystal platform, effectively
Polycrystalline around seed crystal is inhibited to be formed, while also inhibit gas and transmitted toward at crucible cover 3, solve crucible cover 3 and crucible
Body 2 difficult the problem of opening due to crystal bonding.Diversion heating cover 5 can be with global formation, can also be by multi-disc valvular structure
Or longitudinal direction is returned the installation of musical form structure and is composed.
Diversion heating cover 5 is additionally operable to heat being oriented to the edge of seed crystal platform 4, and the lip temperature of seed crystal platform 4 is made to be more than seed crystal
The central temperature of platform 4.The equally valid polycrystalline for inhibiting 4 edge of seed crystal platform is formed.
In the present embodiment, diversion heating cover 5 is tapered, and the cone angle of diversion heating cover 5 is between 20 ° -160 °.Water conservancy diversion adds
The thickness of heat cover 5 is 1-10mm；Between the bottom of diversion heating cover 5 and the top of aluminum nitride powder source/aluminum nitride sintered body 1 away from
From for 1-10mm.
In the present embodiment, the 2 cylinder distribution of crucible body.The crucible body 2, the crucible cover 3, the seed crystal platform 4,
5 coaxial inner conductor of diversion heating cover is distributed, and the axial line of the diversion heating cover 5 is vertically distributed.
Gap distribution between the upper end of diversion heating cover 5 and seed crystal platform 4；By this setting, diversion heating can be prevented
The heat of cover 5 is directly passed to seed crystal platform 4, and the temperature of seed crystal platform 4 is caused to raise, is unfavorable for crystallizing.
Diversion heating cover 5 is fixed on inside crucible body 2：
Diversion heating cover 5 can contact at the inside circumference of crucible body 2 by its circumferential direction of lower end edge；
Or, crucible body 2 include the first noumenon 21, above the first noumenon 21 with its integrally formed second body 22,
The internal diameter of the first noumenon 21 is less than the internal diameter of the second body 22, and the lower end of diversion heating cover 5 is supported arranged on the top of the first noumenon 21.
In the present embodiment, diversion heating cover 5 includes cover body, the heating arrangements for being used to heat cover body in cover body.
The heating arrangements can be tungsten net heater, graphite heater etc..
Heating arrangements are opened, heat can be oriented to the edge of seed crystal platform 4 by diversion heating cover 5；Close heating arrangements,
The heat of 2 bottom of crucible body by the thermal conductivity of diversion heating cover 5, can also be oriented to the edge of seed crystal platform 4.
Crucible device further include in crucible body 2 for separating crucible cover 3 and aluminum nitride powder source/nitridation aluminum sinter
The partition plate 6 of body 1.In the present embodiment, partition plate 6 is held on the top of crucible body 2, positioned at the inside of crucible cover 3, the partition plate 6
In disc-shaped, which is distributed with 5 coaxial inner conductor of diversion heating cover.By setting partition plate 6, inhibit gas phase in crucible cover 3
Surface deposits, and crucible cover 3 can be easily separated with crucible body 2 after long crystalline substance.
The through hole for being coaxial therewith distribution is offered on partition plate 6, seed crystal platform 4 includes be arranged between crucible cover 3 and partition plate 6 the
One stage body 41, be connected to 41 lower part of the first stage body be arranged in through hole in 41 integrally formed second stage body of the first stage body
42.In the present embodiment, the first stage body 41 and the cylinder distribution of the second stage body 42, through hole are circular hole, the first stage body 41
Diameter is more than the diameter of through hole.Obviously, the second stage body 42 can also be square column, it is circle, hollow square column, open circles annulated column, netted
Structure etc..Second stage body 42 is pierced by through hole and extends downwardly, can be from the second stage body 42 with being cut at crystal contact after long crystalline substance
It cuts, then grinds off 4 thin slice of seed crystal platform of crystal bottom.Seed crystal platform 4 after cutting is continuing with after can also polishing.
In the present embodiment, the material of crucible body 2, crucible cover 3, partition plate 6, seed crystal platform 4 and diversion heating cover 5 is high temperature
Refractory metal, metallic compound or high-temperature ceramic materials etc., such as high purity tungsten material, high-purity ramet, tungsten-rhenium alloy or boron nitride
Wait materials.
The above embodiments merely illustrate the technical concept and features of the present invention, and its object is to allow person skilled in the art
Scholar can understand present disclosure and implement according to this, and it is not intended to limit the scope of the present invention.It is all according to the present invention
The equivalent change or modification that Spirit Essence is made, should be covered by the protection scope of the present invention.
Claims (10)
1. a kind of crucible device by physical vapor transport growing aluminum nitride monocrystalline, it is characterised in that：Including being used to place
The crucible body of aluminum nitride powder source/aluminum nitride sintered body, the crucible cover at the top of the crucible body, arranged on the crucible sheet
The seed crystal platform being located at below the crucible cover, the diversion heating cover below the seed crystal platform in body, the diversion heating
Cover gradually radially expands downwards along the direction away from the seed crystal platform, and the diversion heating cover is located at the aluminum nitride powder source/nitrogen
Change the top of aluminum sinter body, the diversion heating cover can be used as pyrotoxin, for heat to be oriented to the seed crystal edge of table,
The seed crystal edge of table temperature is made to be more than the central temperature of the seed crystal platform.
2. a kind of crucible device by physical vapor transport growing aluminum nitride monocrystalline according to claim 1, special
Sign is：Gap distribution between the upper end of the diversion heating cover and the seed crystal platform.
3. a kind of crucible device by physical vapor transport growing aluminum nitride monocrystalline according to claim 1, special
Sign is：Its circumferential direction of the lower end edge of the diversion heating cover contacts at the inside circumference of the crucible body.
4. a kind of crucible device by physical vapor transport growing aluminum nitride monocrystalline according to claim 1, special
Sign is：The crucible body includes the first noumenon, the second body above the first noumenon, the first noumenon
Internal diameter is less than the internal diameter of second body, and the lower end of the diversion heating cover is supported arranged on the top of the first noumenon.
5. a kind of crucible device by physical vapor transport growing aluminum nitride monocrystalline according to claim 1, special
Sign is：The diversion heating cover includes cover body, the heating arrangements for being used to heat the cover body in the cover body.
6. a kind of crucible device by physical vapor transport growing aluminum nitride monocrystalline according to claim 1, special
Sign is：The crucible device further include in the crucible body for separating the crucible cover and the aluminum nitride powder
The partition plate of source/aluminum nitride sintered body.
7. a kind of crucible device by physical vapor transport growing aluminum nitride monocrystalline according to claim 6, special
Sign is：Through hole is offered on the partition plate, the seed crystal platform includes be arranged between the crucible cover and the partition plate first
Stage body, the second stage body being arranged in the through hole for being connected to the first stage body lower part.
8. a kind of crucible device by physical vapor transport growing aluminum nitride monocrystalline according to claim 1, special
Sign is：The diversion heating cover is tapered.
9. a kind of crucible device by physical vapor transport growing aluminum nitride monocrystalline according to claim 8, special
Sign is：The cone angle of the diversion heating cover is between 20 ° -160 °.
10. a kind of crucible device by physical vapor transport growing aluminum nitride monocrystalline according to claim 1, special
Sign is：The thickness of the diversion heating cover is 1-10mm；The bottom of the diversion heating cover and the aluminum nitride powder source/nitridation
The distance between top of aluminum sinter body is 1-10mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711482369.0A CN108103569A (en) | 2017-12-29 | 2017-12-29 | A kind of crucible device by physical vapor transport growing aluminum nitride monocrystalline |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711482369.0A CN108103569A (en) | 2017-12-29 | 2017-12-29 | A kind of crucible device by physical vapor transport growing aluminum nitride monocrystalline |
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| Publication Number | Publication Date |
|---|---|
| CN108103569A true CN108103569A (en) | 2018-06-01 |
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ID=62215109
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|---|---|---|---|
| CN201711482369.0A Pending CN108103569A (en) | 2017-12-29 | 2017-12-29 | A kind of crucible device by physical vapor transport growing aluminum nitride monocrystalline |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110791811A (en) * | 2019-11-21 | 2020-02-14 | 北京大学 | Method and device for expanding growth of AlN single crystal |
| CN113522393A (en) * | 2021-07-01 | 2021-10-22 | 北京科技大学 | Nested balance crucible and control method |
| CN113981539A (en) * | 2021-11-01 | 2022-01-28 | 深圳大学 | Porous tungsten structure crystal preparation device and aluminum nitride crystal preparation method |
| CN114775042A (en) * | 2022-04-25 | 2022-07-22 | 中材人工晶体研究院(山东)有限公司 | Crucible for crystal growth and crystal growth method |
| CN116988144A (en) * | 2023-08-16 | 2023-11-03 | 浙江晶越半导体有限公司 | Method for reducing dislocation in silicon carbide single crystal and improving growth efficiency |
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| JP2012158520A (en) * | 2012-05-30 | 2012-08-23 | Mitsubishi Electric Corp | Apparatus for growing single crystal |
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| CN107723788A (en) * | 2017-10-20 | 2018-02-23 | 苏州奥趋光电技术有限公司 | A kind of crucible device for aluminum-nitride single crystal growth |
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| US20120285370A1 (en) * | 2009-09-15 | 2012-11-15 | Ii-Vi Incorporated | Sublimation growth of sic single crystals |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110791811A (en) * | 2019-11-21 | 2020-02-14 | 北京大学 | Method and device for expanding growth of AlN single crystal |
| CN113522393A (en) * | 2021-07-01 | 2021-10-22 | 北京科技大学 | Nested balance crucible and control method |
| CN113981539A (en) * | 2021-11-01 | 2022-01-28 | 深圳大学 | Porous tungsten structure crystal preparation device and aluminum nitride crystal preparation method |
| CN114775042A (en) * | 2022-04-25 | 2022-07-22 | 中材人工晶体研究院(山东)有限公司 | Crucible for crystal growth and crystal growth method |
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| CN116988144A (en) * | 2023-08-16 | 2023-11-03 | 浙江晶越半导体有限公司 | Method for reducing dislocation in silicon carbide single crystal and improving growth efficiency |
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Application publication date: 20180601 |