JP2012506149A - 低いエッチング速度の誘電体ライナを用いたギャップ充填の改善 - Google Patents

低いエッチング速度の誘電体ライナを用いたギャップ充填の改善 Download PDF

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JP2012506149A
JP2012506149A JP2011532139A JP2011532139A JP2012506149A JP 2012506149 A JP2012506149 A JP 2012506149A JP 2011532139 A JP2011532139 A JP 2011532139A JP 2011532139 A JP2011532139 A JP 2011532139A JP 2012506149 A JP2012506149 A JP 2012506149A
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layer
liner
dielectric
boron
dielectric material
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JP2012506149A5 (https=
Inventor
ヨン ス クォン，
ビ チャン，
アンチュアン ワン，
ヨン， エス． リー，
ミハエラ バルシーヌ，
リ−クン シャ，
ジン ホ チョン，
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6316—Formation by nitridation, e.g. nitridation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6506—Formation of intermediate materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

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  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Element Separation (AREA)
  • Drying Of Semiconductors (AREA)
JP2011532139A 2008-10-16 2009-09-29 低いエッチング速度の誘電体ライナを用いたギャップ充填の改善 Pending JP2012506149A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US10607608P 2008-10-16 2008-10-16
US61/106,076 2008-10-16
US12/437,256 2009-05-07
US12/437,256 US7910491B2 (en) 2008-10-16 2009-05-07 Gapfill improvement with low etch rate dielectric liners
PCT/US2009/058832 WO2010045021A2 (en) 2008-10-16 2009-09-29 Gapfill improvement with low etch rate dielectric liners

Publications (2)

Publication Number Publication Date
JP2012506149A true JP2012506149A (ja) 2012-03-08
JP2012506149A5 JP2012506149A5 (https=) 2012-11-15

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JP2011532139A Pending JP2012506149A (ja) 2008-10-16 2009-09-29 低いエッチング速度の誘電体ライナを用いたギャップ充填の改善

Country Status (6)

Country Link
US (1) US7910491B2 (https=)
JP (1) JP2012506149A (https=)
KR (1) KR101161098B1 (https=)
CN (1) CN102187450A (https=)
TW (1) TWI396253B (https=)
WO (1) WO2010045021A2 (https=)

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JP2014175596A (ja) * 2013-03-12 2014-09-22 Hitachi Kokusai Electric Inc 半導体装置の製造方法、基板処理装置およびプログラム
JP2014183223A (ja) * 2013-03-19 2014-09-29 Hitachi Kokusai Electric Inc 半導体装置の製造方法、基板処理装置およびプログラム
JP2014199942A (ja) * 2009-10-27 2014-10-23 台湾積體電路製造股▲ふん▼有限公司Ｔａｉｗａｎ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｍａｎｕｆａｃｔｕｒｉｎｇ Ｃｏｍｐａｎｙ，Ｌｔｄ． バルクＦｉｎＦＥＴ中のＳｉフィンのフィン下部近くのＳＴＩ形状
KR20170135902A (ko) * 2015-04-03 2017-12-08 어플라이드 머티어리얼스, 인코포레이티드 열 cvd 동안 리간드들을 동시-유동시킴으로써 고 종횡비 트렌치들을 충진하는 프로세스
WO2024157821A1 (ja) * 2023-01-27 2024-08-02 東京エレクトロン株式会社 成膜方法及び成膜装置

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