JP2012501474A5 - - Google Patents

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Publication number
JP2012501474A5
JP2012501474A5 JP2011525073A JP2011525073A JP2012501474A5 JP 2012501474 A5 JP2012501474 A5 JP 2012501474A5 JP 2011525073 A JP2011525073 A JP 2011525073A JP 2011525073 A JP2011525073 A JP 2011525073A JP 2012501474 A5 JP2012501474 A5 JP 2012501474A5
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JP
Japan
Prior art keywords
shots
pattern
vsb
determining
substrate
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JP2011525073A
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English (en)
Japanese (ja)
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JP2012501474A (ja
JP5739808B2 (ja
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Priority claimed from US12/202,364 external-priority patent/US7759026B2/en
Priority claimed from US12/202,366 external-priority patent/US7759027B2/en
Priority claimed from US12/202,365 external-priority patent/US7901845B2/en
Priority claimed from US12/473,248 external-priority patent/US7981575B2/en
Priority claimed from US12/473,265 external-priority patent/US7901850B2/en
Priority claimed from US12/473,241 external-priority patent/US7754401B2/en
Application filed filed Critical
Priority claimed from PCT/US2009/053328 external-priority patent/WO2010025032A2/en
Publication of JP2012501474A publication Critical patent/JP2012501474A/ja
Publication of JP2012501474A5 publication Critical patent/JP2012501474A5/ja
Publication of JP5739808B2 publication Critical patent/JP5739808B2/ja
Application granted granted Critical
Active legal-status Critical Current
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JP2011525073A 2008-09-01 2009-08-10 可変整形ビームリソグラフィを用いたレチクルの光近接効果補正、設計、および製造のための方法 Active JP5739808B2 (ja)

Applications Claiming Priority (15)

Application Number Priority Date Filing Date Title
US12/202,364 US7759026B2 (en) 2008-09-01 2008-09-01 Method and system for manufacturing a reticle using character projection particle beam lithography
US12/202,365 2008-09-01
US12/202,365 US7901845B2 (en) 2008-09-01 2008-09-01 Method for optical proximity correction of a reticle to be manufactured using character projection lithography
US12/202,366 US7759027B2 (en) 2008-09-01 2008-09-01 Method and system for design of a reticle to be manufactured using character projection lithography
US12/202,364 2008-09-01
US12/202,366 2008-09-01
US12/269,777 US7745078B2 (en) 2008-09-01 2008-11-12 Method and system for manufacturing a reticle using character projection lithography
US12/269,777 2008-11-12
US12/473,265 US7901850B2 (en) 2008-09-01 2009-05-27 Method and system for design of a reticle to be manufactured using variable shaped beam lithography
US12/473,241 2009-05-27
US12/473,248 2009-05-27
US12/473,265 2009-05-27
US12/473,248 US7981575B2 (en) 2008-09-01 2009-05-27 Method for optical proximity correction of a reticle to be manufactured using variable shaped beam lithography
US12/473,241 US7754401B2 (en) 2008-09-01 2009-05-27 Method for manufacturing a surface and integrated circuit using variable shaped beam lithography
PCT/US2009/053328 WO2010025032A2 (en) 2008-09-01 2009-08-10 Method for optical proximity correction, design and manufacturing of a reticle using variable shaped beam lithography

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014248818A Division JP5970052B2 (ja) 2008-09-01 2014-12-09 可変整形ビームリソグラフィを用いたレチクルの光近接効果補正、設計、および製造のための方法

Publications (3)

Publication Number Publication Date
JP2012501474A JP2012501474A (ja) 2012-01-19
JP2012501474A5 true JP2012501474A5 (https=) 2012-11-01
JP5739808B2 JP5739808B2 (ja) 2015-06-24

Family

ID=43857606

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2011525073A Active JP5739808B2 (ja) 2008-09-01 2009-08-10 可変整形ビームリソグラフィを用いたレチクルの光近接効果補正、設計、および製造のための方法
JP2014248818A Active JP5970052B2 (ja) 2008-09-01 2014-12-09 可変整形ビームリソグラフィを用いたレチクルの光近接効果補正、設計、および製造のための方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2014248818A Active JP5970052B2 (ja) 2008-09-01 2014-12-09 可変整形ビームリソグラフィを用いたレチクルの光近接効果補正、設計、および製造のための方法

Country Status (6)

Country Link
EP (1) EP2321840B1 (https=)
JP (2) JP5739808B2 (https=)
KR (2) KR20110069044A (https=)
CN (1) CN102138201B (https=)
TW (1) TWI525399B (https=)
WO (1) WO2010025032A2 (https=)

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US8473875B2 (en) 2010-10-13 2013-06-25 D2S, Inc. Method and system for forming high accuracy patterns using charged particle beam lithography
US9341936B2 (en) 2008-09-01 2016-05-17 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
US8703389B2 (en) * 2011-06-25 2014-04-22 D2S, Inc. Method and system for forming patterns with charged particle beam lithography
US9612530B2 (en) 2011-02-28 2017-04-04 D2S, Inc. Method and system for design of enhanced edge slope patterns for charged particle beam lithography
JP2013207182A (ja) * 2012-03-29 2013-10-07 Toppan Printing Co Ltd 荷電ビーム投影露光用マスクの製造方法及び荷電ビーム投影露光用マスク
US20140129997A1 (en) * 2012-11-08 2014-05-08 D2S, Inc. Method and system for dimensional uniformity using charged particle beam lithography
KR102154105B1 (ko) 2012-04-18 2020-09-09 디2에스, 인코포레이티드 하전 입자 빔 리소그라피를 이용하여 패턴들을 형성하기 위한 방법 및 시스템
US9343267B2 (en) 2012-04-18 2016-05-17 D2S, Inc. Method and system for dimensional uniformity using charged particle beam lithography
JP6189933B2 (ja) * 2012-04-18 2017-08-30 ディー・ツー・エス・インコーポレイテッドＤ２Ｓ， Ｉｎｃ． 荷電粒子ビームリソグラフィを用いる限界寸法均一性のための方法およびシステム
FR2994749B1 (fr) * 2012-08-24 2015-07-24 Commissariat Energie Atomique Procede de preparation d’un motif a imprimer sur plaque ou sur masque par lithographie a faisceau d’electrons, systeme de conception de circuit imprime et programme d’ordinateur correspondants.
US8667428B1 (en) * 2012-10-24 2014-03-04 GlobalFoundries, Inc. Methods for directed self-assembly process/proximity correction
TWI512389B (zh) * 2013-02-22 2015-12-11 Globalfoundries Us Inc 定向自組裝製程／鄰近校正之方法
TWI612373B (zh) * 2014-07-24 2018-01-21 聯華電子股份有限公司 光學鄰近修正驗證系統及其驗證方法
KR102395198B1 (ko) 2015-09-22 2022-05-06 삼성전자주식회사 마스크 패턴의 보정 방법 및 이를 이용하는 레티클의 제조 방법
US10197909B2 (en) * 2015-10-06 2019-02-05 Aselta Nanographics Method of reducing shot count in direct writing by a particle or photon beam
JP6674306B2 (ja) * 2016-03-31 2020-04-01 キヤノン株式会社 照明装置、光学装置、インプリント装置、投影装置、及び物品の製造方法
JP7034825B2 (ja) * 2018-05-16 2022-03-14 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
US11302589B2 (en) * 2019-12-02 2022-04-12 Micron Technology, Inc. Electron beam probing techniques and related structures
CN111507058B (zh) * 2020-04-23 2022-07-22 福州立芯科技有限公司 一种考虑电子束雾化效应的解析布局方法
US11783110B2 (en) 2021-07-30 2023-10-10 D2S, Inc. Method for reticle enhancement technology of a design pattern to be manufactured on a substrate
WO2023007321A1 (en) * 2021-07-30 2023-02-02 D2S, Inc. Method for reticle enhancement technology of a design pattern to be manufactured on a substrate
US11693306B2 (en) 2021-07-30 2023-07-04 D2S, Inc. Method for reticle enhancement technology of a design pattern to be manufactured on a substrate

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