KR20110069044A - 가변 형상 비임 리소그래피를 이용한 레티클의 광 근접 보정, 설계 및 제조 방법 - Google Patents

가변 형상 비임 리소그래피를 이용한 레티클의 광 근접 보정, 설계 및 제조 방법 Download PDF

Info

Publication number
KR20110069044A
KR20110069044A KR1020117007654A KR20117007654A KR20110069044A KR 20110069044 A KR20110069044 A KR 20110069044A KR 1020117007654 A KR1020117007654 A KR 1020117007654A KR 20117007654 A KR20117007654 A KR 20117007654A KR 20110069044 A KR20110069044 A KR 20110069044A
Authority
KR
South Korea
Prior art keywords
pattern
shots
vsb
glyphs
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020117007654A
Other languages
English (en)
Korean (ko)
Inventor
아키라 후지무라
랜스 글레서
Original Assignee
디2에스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/202,364 external-priority patent/US7759026B2/en
Priority claimed from US12/202,365 external-priority patent/US7901845B2/en
Priority claimed from US12/202,366 external-priority patent/US7759027B2/en
Priority claimed from US12/473,265 external-priority patent/US7901850B2/en
Priority claimed from US12/473,248 external-priority patent/US7981575B2/en
Priority claimed from US12/473,241 external-priority patent/US7754401B2/en
Application filed by 디2에스, 인코포레이티드 filed Critical 디2에스, 인코포레이티드
Publication of KR20110069044A publication Critical patent/KR20110069044A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020117007654A 2008-09-01 2009-08-10 가변 형상 비임 리소그래피를 이용한 레티클의 광 근접 보정, 설계 및 제조 방법 Ceased KR20110069044A (ko)

Applications Claiming Priority (14)

Application Number Priority Date Filing Date Title
US12/202,364 US7759026B2 (en) 2008-09-01 2008-09-01 Method and system for manufacturing a reticle using character projection particle beam lithography
US12/202,365 2008-09-01
US12/202,365 US7901845B2 (en) 2008-09-01 2008-09-01 Method for optical proximity correction of a reticle to be manufactured using character projection lithography
US12/202,366 US7759027B2 (en) 2008-09-01 2008-09-01 Method and system for design of a reticle to be manufactured using character projection lithography
US12/202,364 2008-09-01
US12/202,366 2008-09-01
US12/269,777 US7745078B2 (en) 2008-09-01 2008-11-12 Method and system for manufacturing a reticle using character projection lithography
US12/269,777 2008-11-12
US12/473,265 US7901850B2 (en) 2008-09-01 2009-05-27 Method and system for design of a reticle to be manufactured using variable shaped beam lithography
US12/473,241 2009-05-27
US12/473,265 2009-05-27
US12/473,248 2009-05-27
US12/473,248 US7981575B2 (en) 2008-09-01 2009-05-27 Method for optical proximity correction of a reticle to be manufactured using variable shaped beam lithography
US12/473,241 US7754401B2 (en) 2008-09-01 2009-05-27 Method for manufacturing a surface and integrated circuit using variable shaped beam lithography

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020147036547A Division KR101688506B1 (ko) 2008-09-01 2009-08-10 가변 형상 비임 리소그래피를 이용한 레티클의 광 근접 보정, 설계 및 제조 방법

Publications (1)

Publication Number Publication Date
KR20110069044A true KR20110069044A (ko) 2011-06-22

Family

ID=43857606

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020117007654A Ceased KR20110069044A (ko) 2008-09-01 2009-08-10 가변 형상 비임 리소그래피를 이용한 레티클의 광 근접 보정, 설계 및 제조 방법
KR1020147036547A Active KR101688506B1 (ko) 2008-09-01 2009-08-10 가변 형상 비임 리소그래피를 이용한 레티클의 광 근접 보정, 설계 및 제조 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020147036547A Active KR101688506B1 (ko) 2008-09-01 2009-08-10 가변 형상 비임 리소그래피를 이용한 레티클의 광 근접 보정, 설계 및 제조 방법

Country Status (6)

Country Link
EP (1) EP2321840B1 (https=)
JP (2) JP5739808B2 (https=)
KR (2) KR20110069044A (https=)
CN (1) CN102138201B (https=)
TW (1) TWI525399B (https=)
WO (1) WO2010025032A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10431422B2 (en) 2012-04-18 2019-10-01 D2S, Inc. Method and system for dimensional uniformity using charged particle beam lithography

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130070222A1 (en) * 2011-09-19 2013-03-21 D2S, Inc. Method and System for Optimization of an Image on a Substrate to be Manufactured Using Optical Lithography
US20120219886A1 (en) 2011-02-28 2012-08-30 D2S, Inc. Method and system for forming patterns using charged particle beam lithography with variable pattern dosage
US8473875B2 (en) 2010-10-13 2013-06-25 D2S, Inc. Method and system for forming high accuracy patterns using charged particle beam lithography
US9341936B2 (en) 2008-09-01 2016-05-17 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
US8703389B2 (en) * 2011-06-25 2014-04-22 D2S, Inc. Method and system for forming patterns with charged particle beam lithography
US9612530B2 (en) 2011-02-28 2017-04-04 D2S, Inc. Method and system for design of enhanced edge slope patterns for charged particle beam lithography
JP2013207182A (ja) * 2012-03-29 2013-10-07 Toppan Printing Co Ltd 荷電ビーム投影露光用マスクの製造方法及び荷電ビーム投影露光用マスク
US20140129997A1 (en) * 2012-11-08 2014-05-08 D2S, Inc. Method and system for dimensional uniformity using charged particle beam lithography
KR102154105B1 (ko) 2012-04-18 2020-09-09 디2에스, 인코포레이티드 하전 입자 빔 리소그라피를 이용하여 패턴들을 형성하기 위한 방법 및 시스템
JP6189933B2 (ja) * 2012-04-18 2017-08-30 ディー・ツー・エス・インコーポレイテッドＤ２Ｓ， Ｉｎｃ． 荷電粒子ビームリソグラフィを用いる限界寸法均一性のための方法およびシステム
FR2994749B1 (fr) * 2012-08-24 2015-07-24 Commissariat Energie Atomique Procede de preparation d’un motif a imprimer sur plaque ou sur masque par lithographie a faisceau d’electrons, systeme de conception de circuit imprime et programme d’ordinateur correspondants.
US8667428B1 (en) * 2012-10-24 2014-03-04 GlobalFoundries, Inc. Methods for directed self-assembly process/proximity correction
TWI512389B (zh) * 2013-02-22 2015-12-11 Globalfoundries Us Inc 定向自組裝製程／鄰近校正之方法
TWI612373B (zh) * 2014-07-24 2018-01-21 聯華電子股份有限公司 光學鄰近修正驗證系統及其驗證方法
KR102395198B1 (ko) 2015-09-22 2022-05-06 삼성전자주식회사 마스크 패턴의 보정 방법 및 이를 이용하는 레티클의 제조 방법
US10197909B2 (en) * 2015-10-06 2019-02-05 Aselta Nanographics Method of reducing shot count in direct writing by a particle or photon beam
JP6674306B2 (ja) * 2016-03-31 2020-04-01 キヤノン株式会社 照明装置、光学装置、インプリント装置、投影装置、及び物品の製造方法
JP7034825B2 (ja) * 2018-05-16 2022-03-14 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
US11302589B2 (en) * 2019-12-02 2022-04-12 Micron Technology, Inc. Electron beam probing techniques and related structures
CN111507058B (zh) * 2020-04-23 2022-07-22 福州立芯科技有限公司 一种考虑电子束雾化效应的解析布局方法
US11783110B2 (en) 2021-07-30 2023-10-10 D2S, Inc. Method for reticle enhancement technology of a design pattern to be manufactured on a substrate
WO2023007321A1 (en) * 2021-07-30 2023-02-02 D2S, Inc. Method for reticle enhancement technology of a design pattern to be manufactured on a substrate
US11693306B2 (en) 2021-07-30 2023-07-04 D2S, Inc. Method for reticle enhancement technology of a design pattern to be manufactured on a substrate

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL97022A0 (en) * 1991-01-24 1992-03-29 Ibm Israel Partitioning method for e-beam lithography
JPH05267133A (ja) * 1992-03-17 1993-10-15 Hitachi Ltd 斜め図形描画法
JP3085454B2 (ja) * 1997-03-13 2000-09-11 日本電気株式会社 荷電粒子線露光方法
JP3564298B2 (ja) * 1998-06-18 2004-09-08 株式会社東芝 計算機を用いたパターン評価方法およびパターン生成方法
US6262429B1 (en) * 1999-01-06 2001-07-17 Etec Systems, Inc. Raster shaped beam, electron beam exposure strategy using a two dimensional multipixel flash field
JP2000269123A (ja) * 1999-03-19 2000-09-29 Toshiba Corp 露光パターンデータの生成方法と荷電ビーム露光装置
KR100327343B1 (ko) * 2000-01-12 2002-03-06 윤종용 전자빔 리소그래피시 재산란된 전자빔에 의한 선폭변화를보정하는 방법 및 이를 기록한 기록매체
JP4522547B2 (ja) * 2000-06-21 2010-08-11 大日本印刷株式会社 微細加工のシミュレーション方法
JP4190796B2 (ja) * 2002-04-24 2008-12-03 Ｎｅｃエレクトロニクス株式会社 露光原版の作成方法
JP2006222230A (ja) * 2005-02-09 2006-08-24 Semiconductor Leading Edge Technologies Inc 近接効果補正方法
JP4701030B2 (ja) 2005-07-22 2011-06-15 キヤノン株式会社 露光装置、露光パラメータを設定する設定方法、露光方法、デバイス製造方法及びプログラム
CN101305319A (zh) 2005-09-07 2008-11-12 凸版光掩膜公司 光掩模及用来在光掩模上形成非正交特征的方法
JP4989158B2 (ja) * 2005-09-07 2012-08-01 株式会社ニューフレアテクノロジー 荷電粒子線描画データの作成方法及び荷電粒子線描画データの変換方法
JP4915502B2 (ja) * 2006-03-06 2012-04-11 凸版印刷株式会社 レジストパターンシミュレーション方法
KR20080001438A (ko) * 2006-06-29 2008-01-03 주식회사 하이닉스반도체 마스크 레이아웃 제작 방법
JP4866683B2 (ja) * 2006-08-25 2012-02-01 富士通セミコンダクター株式会社 半導体デバイスの製造方法、データ作成装置、データ作成方法、およびプログラム
US7902528B2 (en) * 2006-11-21 2011-03-08 Cadence Design Systems, Inc. Method and system for proximity effect and dose correction for a particle beam writing device
US7772575B2 (en) * 2006-11-21 2010-08-10 D2S, Inc. Stencil design and method for cell projection particle beam lithography
JP5224687B2 (ja) 2006-12-22 2013-07-03 キヤノン株式会社 露光条件算出プログラム及び露光条件算出方法
US7824828B2 (en) * 2007-02-22 2010-11-02 Cadence Design Systems, Inc. Method and system for improvement of dose correction for particle beam writers
WO2010025031A2 (en) * 2008-09-01 2010-03-04 D2S, Inc. Method for optical proximity correction, design and manufacturing of a reticle using character projection lithography

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10431422B2 (en) 2012-04-18 2019-10-01 D2S, Inc. Method and system for dimensional uniformity using charged particle beam lithography

Also Published As

Publication number Publication date
JP2015096958A (ja) 2015-05-21
WO2010025032A2 (en) 2010-03-04
CN102138201B (zh) 2014-12-31
JP2012501474A (ja) 2012-01-19
CN102138201A (zh) 2011-07-27
WO2010025032A3 (en) 2010-06-17
EP2321840A4 (en) 2015-12-16
TWI525399B (zh) 2016-03-11
JP5739808B2 (ja) 2015-06-24
KR101688506B1 (ko) 2016-12-21
EP2321840A2 (en) 2011-05-18
JP5970052B2 (ja) 2016-08-17
TW201011478A (en) 2010-03-16
KR20150008928A (ko) 2015-01-23
EP2321840B1 (en) 2017-05-03

Similar Documents

Publication Publication Date Title
KR101688506B1 (ko) 가변 형상 비임 리소그래피를 이용한 레티클의 광 근접 보정, 설계 및 제조 방법
US8202672B2 (en) Method and system for design of a reticle to be manufactured using variable shaped beam lithography
US7981575B2 (en) Method for optical proximity correction of a reticle to be manufactured using variable shaped beam lithography
US7754401B2 (en) Method for manufacturing a surface and integrated circuit using variable shaped beam lithography
US7799489B2 (en) Method for design and manufacture of a reticle using variable shaped beam lithography
KR101979799B1 (ko) 하전된 입자 빔 리소그래피로 패턴들을 형성하기 위한 방법 및 시스템
US9091946B2 (en) Method and system for forming non-manhattan patterns using variable shaped beam lithography
US9164372B2 (en) Method and system for forming non-manhattan patterns using variable shaped beam lithography

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

A107 Divisional application of patent
PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

X091 Application refused [patent]
T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T13-X000 Administrative time limit extension granted

St.27 status event code: U-3-3-T10-T13-oth-X000

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PX0901 Re-examination

St.27 status event code: A-2-3-E10-E12-rex-PX0901

PX0601 Decision of rejection after re-examination

St.27 status event code: N-2-6-B10-B17-rex-PX0601

X601 Decision of rejection after re-examination
R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000