JP2012500481A5 - - Google Patents

Download PDF

Info

Publication number
JP2012500481A5
JP2012500481A5 JP2011523327A JP2011523327A JP2012500481A5 JP 2012500481 A5 JP2012500481 A5 JP 2012500481A5 JP 2011523327 A JP2011523327 A JP 2011523327A JP 2011523327 A JP2011523327 A JP 2011523327A JP 2012500481 A5 JP2012500481 A5 JP 2012500481A5
Authority
JP
Japan
Prior art keywords
layer
substrate
conductive
reticle
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011523327A
Other languages
English (en)
Japanese (ja)
Other versions
JP5449358B2 (ja
JP2012500481A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/EP2009/005490 external-priority patent/WO2010020337A1/en
Publication of JP2012500481A publication Critical patent/JP2012500481A/ja
Publication of JP2012500481A5 publication Critical patent/JP2012500481A5/ja
Application granted granted Critical
Publication of JP5449358B2 publication Critical patent/JP5449358B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2011523327A 2008-08-21 2009-07-29 レチクル、リソグラフィ装置、およびレチクルを生成する方法 Expired - Fee Related JP5449358B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US9083808P 2008-08-21 2008-08-21
US61/090,838 2008-08-21
PCT/EP2009/005490 WO2010020337A1 (en) 2008-08-21 2009-07-29 Euv reticle substrates with high thermal conductivity

Publications (3)

Publication Number Publication Date
JP2012500481A JP2012500481A (ja) 2012-01-05
JP2012500481A5 true JP2012500481A5 (cg-RX-API-DMAC7.html) 2012-09-13
JP5449358B2 JP5449358B2 (ja) 2014-03-19

Family

ID=41114883

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011523327A Expired - Fee Related JP5449358B2 (ja) 2008-08-21 2009-07-29 レチクル、リソグラフィ装置、およびレチクルを生成する方法

Country Status (7)

Country Link
US (1) US8736810B2 (cg-RX-API-DMAC7.html)
JP (1) JP5449358B2 (cg-RX-API-DMAC7.html)
KR (1) KR101670318B1 (cg-RX-API-DMAC7.html)
CN (1) CN102132209B (cg-RX-API-DMAC7.html)
NL (1) NL2003305A (cg-RX-API-DMAC7.html)
TW (1) TWI434132B (cg-RX-API-DMAC7.html)
WO (1) WO2010020337A1 (cg-RX-API-DMAC7.html)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011222958A (ja) * 2010-03-25 2011-11-04 Komatsu Ltd ミラーおよび極端紫外光生成装置
WO2012114980A1 (ja) * 2011-02-24 2012-08-30 旭硝子株式会社 Euvリソグラフィ用反射型マスクブランク
JP5742389B2 (ja) * 2011-03-31 2015-07-01 凸版印刷株式会社 Euv露光用マスクの修正方法およびeuv露光用マスク
DE102011080052A1 (de) 2011-07-28 2013-01-31 Carl Zeiss Smt Gmbh Spiegel, optisches System mit Spiegel und Verfahren zur Herstellung eines Spiegels
DE102011086513A1 (de) 2011-11-16 2013-05-16 Carl Zeiss Smt Gmbh Projektionsbelichtungsverfahren und Projektionsbelichtungsanlage für die Mikrolithographie
DE102012213794A1 (de) 2012-08-03 2014-02-06 Carl Zeiss Smt Gmbh Maskeninspektionsverfahren und Maskeninspektionssystem für EUV-Masken
US9354508B2 (en) * 2013-03-12 2016-05-31 Applied Materials, Inc. Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
JP2015018918A (ja) * 2013-07-10 2015-01-29 キヤノン株式会社 反射型原版、露光方法及びデバイス製造方法
JP6303346B2 (ja) * 2013-09-09 2018-04-04 凸版印刷株式会社 反射型マスクブランクおよび反射型マスク
TWI463251B (zh) * 2013-10-17 2014-12-01 hui ying Lin 具環境資訊感測之光罩結構
JP2017516129A (ja) * 2014-04-02 2017-06-15 ザイゴ コーポレーションZygo Corporation リソグラフィ用フォトマスク
KR102246875B1 (ko) 2014-11-13 2021-04-30 삼성전자 주식회사 그라파이트 층을 갖는 펠리클을 제조하는 방법
KR102254103B1 (ko) * 2015-01-07 2021-05-20 삼성전자주식회사 지지 층을 이용한 펠리클 제조 방법
KR20160101588A (ko) * 2015-02-17 2016-08-25 에스케이하이닉스 주식회사 열팽창에 의한 오버레이 패턴 변형을 억제하는 포토마스크 블랭크 및 포토마스크와, 포토마스크 블랭크를 이용한 포토마스크 제조방법
WO2016144690A1 (en) * 2015-03-12 2016-09-15 Rave, Llc Apparatus and method for indirect surface cleaning
NL2017576A (en) * 2015-10-06 2017-04-11 Asml Netherlands Bv Chucks and clamps for holding objects of a lithographic apparatus and methods for controlling a temperature of an object held by a clamp of a lithographic apparatus
US11448955B2 (en) 2018-09-27 2022-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. Mask for lithography process and method for manufacturing the same
KR102848805B1 (ko) 2019-07-31 2025-08-22 삼성전자주식회사 Euv 레티클 검사 방법, 레티클 제조 방법 및 그를 포함하는 반도체 소자의 제조 방법
EP4097061A1 (en) 2020-01-27 2022-12-07 Heraeus Conamic North America LLC High purity cordierite material for semiconductor applications

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01175734A (ja) 1987-12-29 1989-07-12 Canon Inc 反射型マスク及びその製造方法
DE3856054T2 (de) 1987-02-18 1998-03-19 Canon K.K., Tokio/Tokyo Reflexionsmaske
JPH0868898A (ja) 1994-08-29 1996-03-12 Nikon Corp 反射鏡およびその製造方法
US6159643A (en) * 1999-03-01 2000-12-12 Advanced Micro Devices, Inc. Extreme ultraviolet lithography reflective mask
JP4959080B2 (ja) 1999-06-07 2012-06-20 エクストリーム、ウルトラバイオレット、リミテッド、ライアビリティ、カンパニー 反射マスク基板のコーティング
US6806006B2 (en) * 2002-07-15 2004-10-19 International Business Machines Corporation Integrated cooling substrate for extreme ultraviolet reticle
US7129010B2 (en) * 2002-08-02 2006-10-31 Schott Ag Substrates for in particular microlithography
US7105836B2 (en) 2002-10-18 2006-09-12 Asml Holding N.V. Method and apparatus for cooling a reticle during lithographic exposure
KR100616602B1 (ko) 2002-12-23 2006-08-25 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치
DE10302342A1 (de) * 2003-01-17 2004-08-05 Schott Glas Substrat für die EUV-Mikrolithographie und Herstellverfahren hierfür
DE10317792A1 (de) 2003-04-16 2004-11-11 Schott Glas Maskenrohling zur Verwendung in der EUV-Lithographie und Verfahren zu dessen Herstellung
US8105457B2 (en) 2003-12-22 2012-01-31 Asml Netherlands B.V. Method for joining at least a first member and a second member, lithographic apparatus and device manufacturing method, as well as a device manufactured thereby
US7193228B2 (en) * 2004-03-10 2007-03-20 Cymer, Inc. EUV light source optical elements
JP2005268359A (ja) 2004-03-17 2005-09-29 Nikon Corp ミラー及び照明光学装置
US7781047B2 (en) 2004-10-21 2010-08-24 Eastman Kodak Company Polymeric conductor donor and transfer method
JP2006177740A (ja) * 2004-12-22 2006-07-06 Nikon Corp 多層膜反射鏡及びeuv露光装置
EP1674903B1 (en) 2004-12-22 2008-12-03 Rohm and Haas Electronic Materials, L.L.C. Optical dry-films and methods of forming optical devices with dry-films
JP2006178466A (ja) 2004-12-22 2006-07-06 Rohm & Haas Electronic Materials Llc 光学乾燥フィルム及び乾燥フィルムを有する光学デバイス形成方法
JP2006184902A (ja) 2004-12-22 2006-07-13 Rohm & Haas Electronic Materials Llc 光学デバイスを形成する方法
DE102005027697A1 (de) 2005-06-15 2006-12-28 Infineon Technologies Ag EUV-Reflexionsmaske und Verfahren zu deren Herstellung
US20070097346A1 (en) * 2005-10-28 2007-05-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20070170379A1 (en) 2006-01-24 2007-07-26 Nikon Corporation Cooled optical filters and optical systems comprising same
JP4737426B2 (ja) 2006-04-21 2011-08-03 信越化学工業株式会社 フォトマスクブランク
US7223515B1 (en) 2006-05-30 2007-05-29 3M Innovative Properties Company Thermal mass transfer substrate films, donor elements, and methods of making and using same
JP5053696B2 (ja) * 2007-04-26 2012-10-17 信越化学工業株式会社 静電チャック

Similar Documents

Publication Publication Date Title
JP2012500481A5 (cg-RX-API-DMAC7.html)
TW201013304A (en) EUV reticle substrates with high thermal conductivity
JP6342405B2 (ja) 担体上の解放可能な基板
TWI629511B (zh) 瀏覽裝置
WO2009062665A3 (en) Optical element for the reflection of uv radiation, method for manufacturing the same and projection exposure apparatus comprising the same
JP5709865B2 (ja) Euvまたはuvリソグラフィ装置の部材及びその製造方法
JP2005093997A5 (cg-RX-API-DMAC7.html)
US20180267414A1 (en) Lithographic apparatus and method
JP2009521315A5 (cg-RX-API-DMAC7.html)
JP2002182373A (ja) ペリクル及びその製造方法及びフォトマスク
TW202303266A (zh) 防護膜組件、曝光原版、曝光裝置、防護膜組件的製造方法、及半導體裝置的製造方法
CN103119519B (zh) 曝光系统
JP2011500370A5 (cg-RX-API-DMAC7.html)
CN105164574A (zh) 制备提供高分辨率图像的偏振分束器以及利用此类分束器的系统的方法
WO2015174412A1 (ja) ペリクル枠、ペリクル、枠部材、露光原版、露光装置、及び半導体装置の製造方法
JP2005340459A5 (cg-RX-API-DMAC7.html)
WO2009106305A2 (en) Method of bonding two components by,,fusion bonding" to form a bonded structure
CN102621601B (zh) 一种平面像场超分辨成像透镜的制备方法
JP5566667B2 (ja) 偏光変換素子
CN113219794B (zh) 一种具有能量回收功能的极紫外收集镜及其制备方法
TW200932693A (en) Glass-ceramic and glass-ceramic/ceramic composite semiconductor manufacturing article support devices
CN101030041A (zh) 光刻装置和器件制造方法
JP2018155795A (ja) 光学位相差部材、偏光変換素子、テンプレート及び光学位相差部材の製造方法
JP2008277815A5 (cg-RX-API-DMAC7.html)
JP2006220903A5 (cg-RX-API-DMAC7.html)