CN102132209B - 具有高热传导率的euv掩模版基底 - Google Patents

具有高热传导率的euv掩模版基底 Download PDF

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Publication number
CN102132209B
CN102132209B CN200980132629.9A CN200980132629A CN102132209B CN 102132209 B CN102132209 B CN 102132209B CN 200980132629 A CN200980132629 A CN 200980132629A CN 102132209 B CN102132209 B CN 102132209B
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CN
China
Prior art keywords
layer
substrate
conductive layer
reticle
optical layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200980132629.9A
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English (en)
Chinese (zh)
Other versions
CN102132209A (zh
Inventor
R·A·威克洛
M·L·纳尔逊
M·佩里
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Holding NV
Original Assignee
ASML Holding NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Holding NV filed Critical ASML Holding NV
Publication of CN102132209A publication Critical patent/CN102132209A/zh
Application granted granted Critical
Publication of CN102132209B publication Critical patent/CN102132209B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Environmental & Geological Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Toxicology (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN200980132629.9A 2008-08-21 2009-07-29 具有高热传导率的euv掩模版基底 Expired - Fee Related CN102132209B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US9083808P 2008-08-21 2008-08-21
US61/090,838 2008-08-21
PCT/EP2009/005490 WO2010020337A1 (en) 2008-08-21 2009-07-29 Euv reticle substrates with high thermal conductivity

Publications (2)

Publication Number Publication Date
CN102132209A CN102132209A (zh) 2011-07-20
CN102132209B true CN102132209B (zh) 2014-07-16

Family

ID=41114883

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980132629.9A Expired - Fee Related CN102132209B (zh) 2008-08-21 2009-07-29 具有高热传导率的euv掩模版基底

Country Status (7)

Country Link
US (1) US8736810B2 (cg-RX-API-DMAC7.html)
JP (1) JP5449358B2 (cg-RX-API-DMAC7.html)
KR (1) KR101670318B1 (cg-RX-API-DMAC7.html)
CN (1) CN102132209B (cg-RX-API-DMAC7.html)
NL (1) NL2003305A (cg-RX-API-DMAC7.html)
TW (1) TWI434132B (cg-RX-API-DMAC7.html)
WO (1) WO2010020337A1 (cg-RX-API-DMAC7.html)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011222958A (ja) * 2010-03-25 2011-11-04 Komatsu Ltd ミラーおよび極端紫外光生成装置
WO2012114980A1 (ja) * 2011-02-24 2012-08-30 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
JP5742389B2 (ja) * 2011-03-31 2015-07-01 凸版印刷株式会社 Ｅｕｖ露光用マスクの修正方法およびｅｕｖ露光用マスク
DE102011080052A1 (de) 2011-07-28 2013-01-31 Carl Zeiss Smt Gmbh Spiegel, optisches System mit Spiegel und Verfahren zur Herstellung eines Spiegels
DE102011086513A1 (de) 2011-11-16 2013-05-16 Carl Zeiss Smt Gmbh Projektionsbelichtungsverfahren und Projektionsbelichtungsanlage für die Mikrolithographie
DE102012213794A1 (de) 2012-08-03 2014-02-06 Carl Zeiss Smt Gmbh Maskeninspektionsverfahren und Maskeninspektionssystem für EUV-Masken
US9354508B2 (en) * 2013-03-12 2016-05-31 Applied Materials, Inc. Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
JP2015018918A (ja) * 2013-07-10 2015-01-29 キヤノン株式会社 反射型原版、露光方法及びデバイス製造方法
JP6303346B2 (ja) * 2013-09-09 2018-04-04 凸版印刷株式会社 反射型マスクブランクおよび反射型マスク
TWI463251B (zh) * 2013-10-17 2014-12-01 hui ying Lin 具環境資訊感測之光罩結構
JP2017516129A (ja) * 2014-04-02 2017-06-15 ザイゴ コーポレーションＺｙｇｏ Ｃｏｒｐｏｒａｔｉｏｎ リソグラフィ用フォトマスク
KR102246875B1 (ko) 2014-11-13 2021-04-30 삼성전자 주식회사 그라파이트 층을 갖는 펠리클을 제조하는 방법
KR102254103B1 (ko) * 2015-01-07 2021-05-20 삼성전자주식회사 지지 층을 이용한 펠리클 제조 방법
KR20160101588A (ko) * 2015-02-17 2016-08-25 에스케이하이닉스 주식회사 열팽창에 의한 오버레이 패턴 변형을 억제하는 포토마스크 블랭크 및 포토마스크와, 포토마스크 블랭크를 이용한 포토마스크 제조방법
WO2016144690A1 (en) * 2015-03-12 2016-09-15 Rave, Llc Apparatus and method for indirect surface cleaning
NL2017576A (en) * 2015-10-06 2017-04-11 Asml Netherlands Bv Chucks and clamps for holding objects of a lithographic apparatus and methods for controlling a temperature of an object held by a clamp of a lithographic apparatus
US11448955B2 (en) 2018-09-27 2022-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. Mask for lithography process and method for manufacturing the same
KR102848805B1 (ko) 2019-07-31 2025-08-22 삼성전자주식회사 Euv 레티클 검사 방법, 레티클 제조 방법 및 그를 포함하는 반도체 소자의 제조 방법
EP4097061A1 (en) 2020-01-27 2022-12-07 Heraeus Conamic North America LLC High purity cordierite material for semiconductor applications

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6159643A (en) * 1999-03-01 2000-12-12 Advanced Micro Devices, Inc. Extreme ultraviolet lithography reflective mask
US20040009410A1 (en) * 2002-07-15 2004-01-15 International Business Machines Corporation Integrated cooling substrate for extreme ultraviolet reticle
CN1488994A (zh) * 2002-08-02 2004-04-14 Ф�ز������쳧 用于特殊微型光刻的基片
CN101030041A (zh) * 2005-10-28 2007-09-05 Asml荷兰有限公司 光刻装置和器件制造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01175734A (ja) 1987-12-29 1989-07-12 Canon Inc 反射型マスク及びその製造方法
DE3856054T2 (de) 1987-02-18 1998-03-19 Canon K.K., Tokio/Tokyo Reflexionsmaske
JPH0868898A (ja) 1994-08-29 1996-03-12 Nikon Corp 反射鏡およびその製造方法
JP4959080B2 (ja) 1999-06-07 2012-06-20 エクストリーム、ウルトラバイオレット、リミテッド、ライアビリティ、カンパニー 反射マスク基板のコーティング
US7105836B2 (en) 2002-10-18 2006-09-12 Asml Holding N.V. Method and apparatus for cooling a reticle during lithographic exposure
KR100616602B1 (ko) 2002-12-23 2006-08-25 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치
DE10302342A1 (de) * 2003-01-17 2004-08-05 Schott Glas Substrat für die EUV-Mikrolithographie und Herstellverfahren hierfür
DE10317792A1 (de) 2003-04-16 2004-11-11 Schott Glas Maskenrohling zur Verwendung in der EUV-Lithographie und Verfahren zu dessen Herstellung
US8105457B2 (en) 2003-12-22 2012-01-31 Asml Netherlands B.V. Method for joining at least a first member and a second member, lithographic apparatus and device manufacturing method, as well as a device manufactured thereby
US7193228B2 (en) * 2004-03-10 2007-03-20 Cymer, Inc. EUV light source optical elements
JP2005268359A (ja) 2004-03-17 2005-09-29 Nikon Corp ミラー及び照明光学装置
US7781047B2 (en) 2004-10-21 2010-08-24 Eastman Kodak Company Polymeric conductor donor and transfer method
JP2006177740A (ja) * 2004-12-22 2006-07-06 Nikon Corp 多層膜反射鏡及びｅｕｖ露光装置
EP1674903B1 (en) 2004-12-22 2008-12-03 Rohm and Haas Electronic Materials, L.L.C. Optical dry-films and methods of forming optical devices with dry-films
JP2006178466A (ja) 2004-12-22 2006-07-06 Rohm & Haas Electronic Materials Llc 光学乾燥フィルム及び乾燥フィルムを有する光学デバイス形成方法
JP2006184902A (ja) 2004-12-22 2006-07-13 Rohm & Haas Electronic Materials Llc 光学デバイスを形成する方法
DE102005027697A1 (de) 2005-06-15 2006-12-28 Infineon Technologies Ag EUV-Reflexionsmaske und Verfahren zu deren Herstellung
US20070170379A1 (en) 2006-01-24 2007-07-26 Nikon Corporation Cooled optical filters and optical systems comprising same
JP4737426B2 (ja) 2006-04-21 2011-08-03 信越化学工業株式会社 フォトマスクブランク
US7223515B1 (en) 2006-05-30 2007-05-29 3M Innovative Properties Company Thermal mass transfer substrate films, donor elements, and methods of making and using same
JP5053696B2 (ja) * 2007-04-26 2012-10-17 信越化学工業株式会社 静電チャック

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6159643A (en) * 1999-03-01 2000-12-12 Advanced Micro Devices, Inc. Extreme ultraviolet lithography reflective mask
US20040009410A1 (en) * 2002-07-15 2004-01-15 International Business Machines Corporation Integrated cooling substrate for extreme ultraviolet reticle
US6806006B2 (en) * 2002-07-15 2004-10-19 International Business Machines Corporation Integrated cooling substrate for extreme ultraviolet reticle
CN1488994A (zh) * 2002-08-02 2004-04-14 Ф�ز������쳧 用于特殊微型光刻的基片
CN101030041A (zh) * 2005-10-28 2007-09-05 Asml荷兰有限公司 光刻装置和器件制造方法

Also Published As

Publication number Publication date
JP5449358B2 (ja) 2014-03-19
TWI434132B (zh) 2014-04-11
US8736810B2 (en) 2014-05-27
NL2003305A (en) 2010-03-10
KR20110046545A (ko) 2011-05-04
US20110116068A1 (en) 2011-05-19
CN102132209A (zh) 2011-07-20
JP2012500481A (ja) 2012-01-05
WO2010020337A1 (en) 2010-02-25
TW201013304A (en) 2010-04-01
KR101670318B1 (ko) 2016-10-28

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Granted publication date: 20140716

Termination date: 20200729

CF01 Termination of patent right due to non-payment of annual fee