JP2012253108A - 炭化珪素半導体装置およびその製造方法 - Google Patents

炭化珪素半導体装置およびその製造方法 Download PDF

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Publication number
JP2012253108A
JP2012253108A JP2011123076A JP2011123076A JP2012253108A JP 2012253108 A JP2012253108 A JP 2012253108A JP 2011123076 A JP2011123076 A JP 2011123076A JP 2011123076 A JP2011123076 A JP 2011123076A JP 2012253108 A JP2012253108 A JP 2012253108A
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Japan
Prior art keywords
impurity concentration
conductivity type
region
silicon carbide
type
Prior art date
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Pending
Application number
JP2011123076A
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English (en)
Japanese (ja)
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JP2012253108A5 (enExample
Inventor
Misako Honaga
美紗子 穂永
Takeyoshi Masuda
健良 増田
Keiji Wada
圭司 和田
Toru Hiyoshi
透 日吉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP2011123076A priority Critical patent/JP2012253108A/ja
Priority to PCT/JP2012/057515 priority patent/WO2012165008A1/ja
Priority to EP12792854.7A priority patent/EP2717318A4/en
Priority to CN201280021568.0A priority patent/CN103548143A/zh
Priority to KR1020137028281A priority patent/KR20140020976A/ko
Priority to TW101113657A priority patent/TW201251039A/zh
Priority to US13/485,423 priority patent/US8564017B2/en
Publication of JP2012253108A publication Critical patent/JP2012253108A/ja
Publication of JP2012253108A5 publication Critical patent/JP2012253108A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/662—Vertical DMOS [VDMOS] FETs having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

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  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2011123076A 2011-06-01 2011-06-01 炭化珪素半導体装置およびその製造方法 Pending JP2012253108A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2011123076A JP2012253108A (ja) 2011-06-01 2011-06-01 炭化珪素半導体装置およびその製造方法
PCT/JP2012/057515 WO2012165008A1 (ja) 2011-06-01 2012-03-23 炭化珪素半導体装置およびその製造方法
EP12792854.7A EP2717318A4 (en) 2011-06-01 2012-03-23 SILICON CARBIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR
CN201280021568.0A CN103548143A (zh) 2011-06-01 2012-03-23 碳化硅半导体器件及其制造方法
KR1020137028281A KR20140020976A (ko) 2011-06-01 2012-03-23 탄화규소 반도체 장치 및 그 제조 방법
TW101113657A TW201251039A (en) 2011-06-01 2012-04-17 Silicon carbide semiconductor device and method for manufacturing same
US13/485,423 US8564017B2 (en) 2011-06-01 2012-05-31 Silicon carbide semiconductor device and method for manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011123076A JP2012253108A (ja) 2011-06-01 2011-06-01 炭化珪素半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2012253108A true JP2012253108A (ja) 2012-12-20
JP2012253108A5 JP2012253108A5 (enExample) 2014-07-24

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JP2011123076A Pending JP2012253108A (ja) 2011-06-01 2011-06-01 炭化珪素半導体装置およびその製造方法

Country Status (7)

Country Link
US (1) US8564017B2 (enExample)
EP (1) EP2717318A4 (enExample)
JP (1) JP2012253108A (enExample)
KR (1) KR20140020976A (enExample)
CN (1) CN103548143A (enExample)
TW (1) TW201251039A (enExample)
WO (1) WO2012165008A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016058530A (ja) * 2014-09-09 2016-04-21 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP2016514373A (ja) * 2013-03-13 2016-05-19 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． 埋め込みウェル領域およびエピタキシャル層を有する電界効果型トランジスタデバイス
CN113053997A (zh) * 2020-12-28 2021-06-29 全球能源互联网研究院有限公司 高压碳化硅器件的结终端扩展结构及其制造方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9142668B2 (en) 2013-03-13 2015-09-22 Cree, Inc. Field effect transistor devices with buried well protection regions
US9306061B2 (en) 2013-03-13 2016-04-05 Cree, Inc. Field effect transistor devices with protective regions
US9012984B2 (en) 2013-03-13 2015-04-21 Cree, Inc. Field effect transistor devices with regrown p-layers
JP6610653B2 (ja) * 2015-02-20 2019-11-27 住友電気工業株式会社 炭化珪素半導体装置
CN104966735A (zh) * 2015-05-26 2015-10-07 株洲南车时代电气股份有限公司 一种碳化硅mosfet器件及其制备方法
CN108292686B (zh) * 2015-12-02 2021-02-12 三菱电机株式会社 碳化硅外延基板及碳化硅半导体装置
KR101786738B1 (ko) 2016-05-11 2017-10-18 현대오트론 주식회사 반도체 장치
CN108091695B (zh) * 2017-12-13 2020-08-28 南京溧水高新创业投资管理有限公司 垂直双扩散场效应晶体管及其制作方法
CN111509037A (zh) * 2020-05-07 2020-08-07 派恩杰半导体（杭州）有限公司 一种带有槽型jfet的碳化硅mos器件及其制备工艺
CN111354632A (zh) * 2020-05-21 2020-06-30 江苏长晶科技有限公司 一种碳化硅元器件的掺杂方法及其制备方式
JP2025082356A (ja) * 2023-11-17 2025-05-29 新電元工業株式会社 炭化ケイ素半導体装置及び炭化ケイ素半導体装置の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007184434A (ja) * 2006-01-10 2007-07-19 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法
WO2007108439A1 (ja) * 2006-03-22 2007-09-27 Mitsubishi Electric Corporation 電力用半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2004036655A1 (ja) 2002-10-18 2006-03-16 独立行政法人産業技術総合研究所 炭化ケイ素半導体装置及びその製造方法
US7221010B2 (en) * 2002-12-20 2007-05-22 Cree, Inc. Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors
JP4948784B2 (ja) * 2005-05-19 2012-06-06 三菱電機株式会社 半導体装置及びその製造方法
JP5236281B2 (ja) 2007-12-27 2013-07-17 ラピスセミコンダクタ株式会社 縦型ｍｏｓｆｅｔの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007184434A (ja) * 2006-01-10 2007-07-19 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法
WO2007108439A1 (ja) * 2006-03-22 2007-09-27 Mitsubishi Electric Corporation 電力用半導体装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016514373A (ja) * 2013-03-13 2016-05-19 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． 埋め込みウェル領域およびエピタキシャル層を有する電界効果型トランジスタデバイス
JP2016058530A (ja) * 2014-09-09 2016-04-21 住友電気工業株式会社 炭化珪素半導体装置の製造方法
CN113053997A (zh) * 2020-12-28 2021-06-29 全球能源互联网研究院有限公司 高压碳化硅器件的结终端扩展结构及其制造方法
CN113053997B (zh) * 2020-12-28 2022-06-10 全球能源互联网研究院有限公司 高压碳化硅器件的结终端扩展结构及其制造方法

Also Published As

Publication number Publication date
KR20140020976A (ko) 2014-02-19
WO2012165008A1 (ja) 2012-12-06
US8564017B2 (en) 2013-10-22
TW201251039A (en) 2012-12-16
EP2717318A4 (en) 2014-11-26
US20120305943A1 (en) 2012-12-06
EP2717318A1 (en) 2014-04-09
CN103548143A (zh) 2014-01-29

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