JP2012244125A - 固体撮像装置及びその製造方法 - Google Patents
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- 238000003384 imaging method Methods 0.000 claims description 30
- 239000012535 impurity Substances 0.000 claims description 22
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L27/144—Devices controlled by radiation
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- H01L27/14643—Photodiode arrays; MOS imagers
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- H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
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- H01L27/146—Imager structures
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- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14616—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
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Abstract
【解決手段】固体撮像装置は、半導体基板11と、半導体基板11に設けられ、かつN型領域及びP型領域から構成されるフォトダイオード17と、半導体基板11に設けられ、かつフォトダイオード17から転送された電荷を保持する浮遊拡散層25と、半導体基板11に設けられ、かつフォトダイオード17に蓄積された電荷を浮遊拡散層25に転送する転送トランジスタとを含む。フォトダイオード17のN型領域は、第1の半導体領域14と、第1の半導体領域14より浅い第2の半導体領域15とから構成される。第1の半導体領域14の端部は、転送トランジスタのゲート電極20の端部よりも浮遊拡散層25側に位置し、第2の半導体領域15の端部は、転送トランジスタのゲート電極20の端部と略同じ位置である。
【選択図】 図5
Description
以上詳述したように本実施形態では、フォトダイオード17は、半導体基板11の深い側から順に、N型半導体領域14、N型半導体領域15、及びP型半導体領域16から構成される。そして、N型半導体領域14は、MOSFET用のゲート電極20を形成する前に、レジスト層23をマスクとして半導体基板11内に高い加速エネルギー(例えば200keV以上)でイオン注入して形成される。これにより、N型半導体領域14は、半導体基板11の深い領域に形成されるため、N型半導体領域14と浮遊拡散層25との距離を十分離すことが可能となる。この結果、N型半導体領域14と浮遊拡散層25とが近づきすぎて、転送トランジスタがカットオフできないという問題が解消できる。
Claims (7)
- 半導体基板と、
前記半導体基板に設けられ、かつN型領域及びP型領域から構成されるフォトダイオードと、
前記半導体基板に設けられ、かつ前記フォトダイオードから転送された電荷を保持する浮遊拡散層と、
前記半導体基板に設けられ、かつ前記フォトダイオードに蓄積された電荷を前記浮遊拡散層に転送する転送トランジスタと、
を具備し、
前記フォトダイオードのN型領域は、第1の半導体領域と、前記第1の半導体領域より浅い第2の半導体領域とから構成され、
前記第1の半導体領域の端部は、前記転送トランジスタのゲート電極の端部よりも前記浮遊拡散層側に位置し、
前記第2の半導体領域の端部は、前記転送トランジスタのゲート電極の端部と略同じ位置であることを特徴とする固体撮像装置。 - 前記フォトダイオードのP型領域の端部は、前記転送トランジスタのゲート電極の端部と略同じ位置であることを特徴とする請求項1に記載の固体撮像装置。
- 前記第2の半導体領域の不純物濃度のピーク深さは、前記第1の半導体領域の不純物濃度のピーク深さより浅いことを特徴とする請求項1又は2に記載の固体撮像装置。
- 前記第2の半導体領域は、前記転送トランジスタのゲート電極をマスクとして、セルフアラインで形成されることを特徴とする請求項1乃至3のいずれかに記載の固体撮像装置。
- フォトダイオードと、前記フォトダイオードに蓄積された電荷を浮遊拡散層に転送する転送トランジスタとを有する固体撮像装置の製造方法であって、
半導体基板にN型不純物を導入し、前記半導体基板内に前記フォトダイオードの第1の半導体領域を形成する工程と、
前記半導体基板上に、前記転送トランジスタのゲート電極を形成する工程と、
前記ゲート電極をマスクとして前記半導体基板内にN型不純物を導入し、前記半導体基板内の前記第1の半導体領域より浅い位置に、前記フォトダイオードの第2の半導体領域を形成する工程と、
を具備することを特徴とする固体撮像装置の製造方法。 - 前記第2の半導体領域を形成する際の不純物の加速エネルギーは、前記第1の半導体領域を形成する際の不純物の加速エネルギーより低いことを特徴とする請求項5に記載の固体撮像装置の製造方法。
- 前記ゲート電極をマスクとして前記半導体基板内にP型不純物を導入し、前記半導体基板内の前記第2の半導体領域より浅い位置に、前記フォトダイオードの第3の半導体領域を形成する工程をさらに具備することを特徴とする請求項5又は6に記載の固体撮像装置の製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011116188A JP2012244125A (ja) | 2011-05-24 | 2011-05-24 | 固体撮像装置及びその製造方法 |
TW101107898A TWI459550B (zh) | 2011-05-24 | 2012-03-08 | 固態攝像裝置及其製造方法 |
KR1020120024954A KR101348823B1 (ko) | 2011-05-24 | 2012-03-12 | 고체 촬상 장치 및 그 제조 방법 |
CN201210067578XA CN102800682A (zh) | 2011-05-24 | 2012-03-14 | 固体拍摄装置及其制造方法 |
US13/423,382 US8907387B2 (en) | 2011-05-24 | 2012-03-19 | Solid-state imaging device and manufacturing method thereof |
US14/540,483 US20150069477A1 (en) | 2011-05-24 | 2014-11-13 | Solid-state imaging device and manufacturing method thereof |
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JP2011116188A JP2012244125A (ja) | 2011-05-24 | 2011-05-24 | 固体撮像装置及びその製造方法 |
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JP2012244125A true JP2012244125A (ja) | 2012-12-10 |
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US (2) | US8907387B2 (ja) |
JP (1) | JP2012244125A (ja) |
KR (1) | KR101348823B1 (ja) |
CN (1) | CN102800682A (ja) |
TW (1) | TWI459550B (ja) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07161958A (ja) * | 1993-12-09 | 1995-06-23 | Nec Corp | 固体撮像装置 |
JPH07161985A (ja) * | 1993-12-06 | 1995-06-23 | Nec Corp | 半導体装置の製造方法 |
JP2001185711A (ja) * | 1999-12-27 | 2001-07-06 | Sony Corp | 固体撮像素子 |
JP2003282857A (ja) * | 2001-11-16 | 2003-10-03 | Hynix Semiconductor Inc | イメージセンサおよびその製造方法 |
JP2008066480A (ja) * | 2006-09-06 | 2008-03-21 | Sharp Corp | 固体撮像素子および電子情報機器 |
JP2008135780A (ja) * | 2008-02-08 | 2008-06-12 | Sony Corp | X−yアドレス型固体撮像素子の製造方法 |
JP2011082329A (ja) * | 2009-10-07 | 2011-04-21 | Sony Corp | 固体撮像装置、撮像装置および固体撮像装置の製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3759435B2 (ja) * | 2001-07-11 | 2006-03-22 | ソニー株式会社 | X−yアドレス型固体撮像素子 |
US20090200580A1 (en) * | 2008-02-08 | 2009-08-13 | Omnivision Technologies, Inc. | Image sensor and pixel including a deep photodetector |
JP2009266842A (ja) | 2008-04-21 | 2009-11-12 | Toshiba Corp | 固体撮像装置およびその製造方法 |
JP5369505B2 (ja) * | 2008-06-09 | 2013-12-18 | ソニー株式会社 | 固体撮像装置、及び電子機器 |
EP2133918B1 (en) * | 2008-06-09 | 2015-01-28 | Sony Corporation | Solid-state imaging device, drive method thereof and electronic apparatus |
JP4788742B2 (ja) * | 2008-06-27 | 2011-10-05 | ソニー株式会社 | 固体撮像装置及び電子機器 |
JP2010073902A (ja) * | 2008-09-18 | 2010-04-02 | Sony Corp | イオン注入方法、固体撮像装置の製造方法、固体撮像装置、並びに電子機器 |
JP5493430B2 (ja) | 2009-03-31 | 2014-05-14 | ソニー株式会社 | 固体撮像装置とその製造方法、及び電子機器 |
JP5671830B2 (ja) * | 2010-03-31 | 2015-02-18 | ソニー株式会社 | 固体撮像素子、固体撮像素子の製造方法、および電子機器 |
-
2011
- 2011-05-24 JP JP2011116188A patent/JP2012244125A/ja active Pending
-
2012
- 2012-03-08 TW TW101107898A patent/TWI459550B/zh not_active IP Right Cessation
- 2012-03-12 KR KR1020120024954A patent/KR101348823B1/ko not_active IP Right Cessation
- 2012-03-14 CN CN201210067578XA patent/CN102800682A/zh active Pending
- 2012-03-19 US US13/423,382 patent/US8907387B2/en not_active Expired - Fee Related
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2014
- 2014-11-13 US US14/540,483 patent/US20150069477A1/en not_active Abandoned
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07161985A (ja) * | 1993-12-06 | 1995-06-23 | Nec Corp | 半導体装置の製造方法 |
JPH07161958A (ja) * | 1993-12-09 | 1995-06-23 | Nec Corp | 固体撮像装置 |
JP2001185711A (ja) * | 1999-12-27 | 2001-07-06 | Sony Corp | 固体撮像素子 |
JP2003282857A (ja) * | 2001-11-16 | 2003-10-03 | Hynix Semiconductor Inc | イメージセンサおよびその製造方法 |
JP2008066480A (ja) * | 2006-09-06 | 2008-03-21 | Sharp Corp | 固体撮像素子および電子情報機器 |
JP2008135780A (ja) * | 2008-02-08 | 2008-06-12 | Sony Corp | X−yアドレス型固体撮像素子の製造方法 |
JP2011082329A (ja) * | 2009-10-07 | 2011-04-21 | Sony Corp | 固体撮像装置、撮像装置および固体撮像装置の製造方法 |
Also Published As
Publication number | Publication date |
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CN102800682A (zh) | 2012-11-28 |
TW201301490A (zh) | 2013-01-01 |
US8907387B2 (en) | 2014-12-09 |
US20150069477A1 (en) | 2015-03-12 |
KR101348823B1 (ko) | 2014-01-07 |
US20120299071A1 (en) | 2012-11-29 |
TWI459550B (zh) | 2014-11-01 |
KR20120131092A (ko) | 2012-12-04 |
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