JP2012243815A - 半導体発光素子、ウェーハ、および窒化物半導体結晶層の製造方法 - Google Patents
半導体発光素子、ウェーハ、および窒化物半導体結晶層の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 115
- 239000013078 crystal Substances 0.000 title claims abstract description 64
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 238000000605 extraction Methods 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims description 73
- 230000001850 reproductive effect Effects 0.000 abstract 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 67
- 229910002601 GaN Inorganic materials 0.000 description 66
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 31
- 229910052710 silicon Inorganic materials 0.000 description 31
- 239000010703 silicon Substances 0.000 description 31
- 239000010408 film Substances 0.000 description 30
- 238000000034 method Methods 0.000 description 25
- 238000005530 etching Methods 0.000 description 16
- 239000010409 thin film Substances 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 229910052594 sapphire Inorganic materials 0.000 description 11
- 239000010980 sapphire Substances 0.000 description 11
- 235000012431 wafers Nutrition 0.000 description 11
- 239000004020 conductor Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- 238000001947 vapour-phase growth Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000010306 acid treatment Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000002294 plasma sputter deposition Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- MOFOBJHOKRNACT-UHFFFAOYSA-N nickel silver Chemical compound [Ni].[Ag] MOFOBJHOKRNACT-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
【解決手段】本発明の実施態様によれば、第1半導体層と、発光層と、第2半導体層と、低屈折率層と、を備えた半導体発光素子が提供される。前記第1半導体層は、光取り出し面を形成する。前記発光層は、前記第1半導体層の上に設けられ活性層を有する。前記第2半導体層は、前記発光層の上に設けられている。前記低屈折率層は、前記第1半導体層の屈折率よりも低い屈折率を有し、前記光取り出し面を部分的に覆う。
【選択図】図1
Description
図1は、実施の形態にかかる半導体発光素子を表す断面模式図である。
本実施形態にかかる半導体発光素子110は、n形層(第1半導体層)10と、p形層(第2半導体層)20と、MQW(Multiple Quantum Well)活性層(発光層)30と、支持基板40と、突起部(低屈折率層)60と、反射金属80と、を備える。そして、本実施形態にかかる半導体発光素子110では、p形層20、MQW活性層30、n形層10のLED(Light Emitting Diode)積層構造に対して、p形層20側に反射金属80を介してSi基板からなる支持基板40が接合されている。反射金属80は、電極膜を兼用する。
また、図3は、さらに他の実施の形態にかかる半導体発光素子を表す断面模式図である。
また、図4は、さらに他の実施の形態にかかる半導体発光素子を表す断面模式図である。
また、図5は、図2に表した半導体発光素子に透明導電体膜が設けられた状態を表す断面模式図である。
また、図6は、図4に表した半導体発光素子に透明導電体膜が設けられた状態を表す断面模式図である。
なお、図2〜図6に表した半導体発光素子では、図1に表した支持基板40を省略している。
一方、図5および図6に表したように、凹凸面(突起部60を含む光取り出し面10b)上に酸化インジウム錫(ITO)に代表される透明導電体膜75を積層しn側電極とする場合には、図2に表した半導体発光素子120あるいは図4に表した半導体発光素子140のほうが有利である。一般に積層するITO層(透明導電体膜)75の厚さが200nm程度であり、表面の凹凸が小さいほうがITO膜厚に対して同等かそれ以下であるほうが、透明導電体膜75の段切れなどの問題が生じにくいためである。
図7(a)〜図7(c)は、実施の形態に係るウェーハおよび窒化物半導体結晶層の製造方法を例示する断面模式図である。
図8(a)〜図8(f)は、実施の形態に係るウェーハおよび窒化物半導体結晶層の他の製造方法を例示する断面模式図である。
図9(a)および図9(b)は、さらに他の実施の形態にかかる半導体発光素子を説明する断面模式図である。
図10(b)に表したように、本実施形態にかかる半導体発光素子160では、エッチング前のAlNの突起部60の大きさ(横方向の幅)及び間隔を不規則に配置している。これにより、ドライエッチング後の凹凸の形状により不規則性をもたらすことが可能である。
また、各具体例のいずれか2つ以上の要素を技術的に可能な範囲で組み合わせたものも、本発明の要旨を包含する限り本発明の範囲に含まれる。
Claims (6)
- 光取り出し面を形成する第1半導体層と、
前記第1半導体層の上に設けられ活性層を有する発光層と、
前記発光層の上に設けられた第2半導体層と、
前記第1半導体層の屈折率よりも低い屈折率を有し、前記光取り出し面を部分的に覆う低屈折率層と、
を備えたことを特徴とする半導体発光素子。 - 前記光取り出し面は、凹凸形状を有し、
前記低屈折率層は、前記凹凸形状の凸部上に設けられたことを特徴とする請求項1記載の半導体発光素子。 - 前記第1半導体層は、窒化物半導体結晶を含み、
前記低屈折率層は、Alを含む窒化物からなる結晶を含み、
前記第1半導体層のAlの含有量は、前記低屈折率層のAlの含有量よりも少ないことを特徴とする請求項2記載の半導体発光素子。 - 基板と、
光取り出し面を形成する半導体層と、
前記半導体層の屈折率よりも低い屈折率を有し、前記光取り出し面を部分的に覆う低屈折率層と、
を備えたことを特徴とするウェーハ。 - 結晶基板の上に、前記結晶基板の主面を部分的に覆うようにAlを含む窒化物からなる第1結晶層を形成し、
前記第1結晶層の上に前記第1結晶層よりもAlの含有量が少ない窒化物からなる第2結晶層をエピタキシャル成長させた後、
前記結晶基板を剥離することを特徴とする窒化物半導体結晶層の製造方法。 - 前記第2結晶層の屈折率は、前記第1結晶層の屈折率よりも高いことを特徴とする請求項5記載の窒化物半導体結晶層の製造方法。
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JP2011109784A JP5117596B2 (ja) | 2011-05-16 | 2011-05-16 | 半導体発光素子、ウェーハ、および窒化物半導体結晶層の製造方法 |
US13/220,059 US8952401B2 (en) | 2011-05-16 | 2011-08-29 | Semiconductor light emitting device, wafer, and method for manufacturing nitride semiconductor crystal layer |
US14/577,523 US20150102381A1 (en) | 2011-05-16 | 2014-12-19 | Semiconductor light emitting device, wafer, and method for manufacturing nitride semiconductor crystal layer |
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US20150102381A1 (en) | 2015-04-16 |
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JP5117596B2 (ja) | 2013-01-16 |
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