JP2012222364A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2012222364A5 JP2012222364A5 JP2012090521A JP2012090521A JP2012222364A5 JP 2012222364 A5 JP2012222364 A5 JP 2012222364A5 JP 2012090521 A JP2012090521 A JP 2012090521A JP 2012090521 A JP2012090521 A JP 2012090521A JP 2012222364 A5 JP2012222364 A5 JP 2012222364A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- forming
- nanocrystals
- annealing
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002159 nanocrystal Substances 0.000 claims 11
- 239000000463 material Substances 0.000 claims 10
- 238000000034 method Methods 0.000 claims 8
- 238000000137 annealing Methods 0.000 claims 6
- 239000004065 semiconductor Substances 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 4
- 229920005591 polysilicon Polymers 0.000 claims 4
- 238000000151 deposition Methods 0.000 claims 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 2
- 238000000059 patterning Methods 0.000 claims 2
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/085,230 US8329543B2 (en) | 2011-04-12 | 2011-04-12 | Method for forming a semiconductor device having nanocrystals |
| US13/085,230 | 2011-04-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012222364A JP2012222364A (ja) | 2012-11-12 |
| JP2012222364A5 true JP2012222364A5 (enExample) | 2015-05-28 |
Family
ID=46993263
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012090521A Pending JP2012222364A (ja) | 2011-04-12 | 2012-04-11 | ナノ結晶を有する半導体デバイスを形成する方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8329543B2 (enExample) |
| JP (1) | JP2012222364A (enExample) |
| CN (1) | CN102738005B (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8679912B2 (en) * | 2012-01-31 | 2014-03-25 | Freescale Semiconductor, Inc. | Semiconductor device having different non-volatile memories having nanocrystals of differing densities and method therefor |
| CN104299904B (zh) * | 2013-07-16 | 2017-09-26 | 中芯国际集成电路制造(上海)有限公司 | 闪存单元的形成方法 |
| US11173235B2 (en) | 2016-07-15 | 2021-11-16 | Cook Regentec Llc | Nitrite eluting devices and methods of use thereof |
| JP7079762B2 (ja) * | 2019-10-28 | 2022-06-02 | キオクシア株式会社 | 不揮発性半導体記憶装置及びその製造方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5714766A (en) | 1995-09-29 | 1998-02-03 | International Business Machines Corporation | Nano-structure memory device |
| US6060743A (en) | 1997-05-21 | 2000-05-09 | Kabushiki Kaisha Toshiba | Semiconductor memory device having multilayer group IV nanocrystal quantum dot floating gate and method of manufacturing the same |
| JP4056817B2 (ja) | 2002-07-23 | 2008-03-05 | 光正 小柳 | 不揮発性半導体記憶素子の製造方法 |
| US6808986B2 (en) | 2002-08-30 | 2004-10-26 | Freescale Semiconductor, Inc. | Method of forming nanocrystals in a memory device |
| JP4532086B2 (ja) * | 2003-08-28 | 2010-08-25 | シャープ株式会社 | 微粒子含有体の製造方法 |
| JP4072621B2 (ja) * | 2003-10-23 | 2008-04-09 | 国立大学法人名古屋大学 | シリコンナノ結晶の作製方法及びフローティングゲート型メモリキャパシタ構造の作製方法 |
| US20060189079A1 (en) * | 2005-02-24 | 2006-08-24 | Merchant Tushar P | Method of forming nanoclusters |
| KR100735534B1 (ko) * | 2006-04-04 | 2007-07-04 | 삼성전자주식회사 | 나노 크리스탈 비휘발성 반도체 집적 회로 장치 및 그 제조방법 |
| KR100874944B1 (ko) * | 2007-02-02 | 2008-12-19 | 삼성전자주식회사 | 반도체 메모리 소자 제조 방법 및 이에 따른 반도체 메모리소자 |
| CN101330008A (zh) * | 2007-06-20 | 2008-12-24 | 中国科学院微电子研究所 | 一种制作金属纳米晶非挥发性存储器的方法 |
| US7898850B2 (en) * | 2007-10-12 | 2011-03-01 | Micron Technology, Inc. | Memory cells, electronic systems, methods of forming memory cells, and methods of programming memory cells |
| US7799634B2 (en) | 2008-12-19 | 2010-09-21 | Freescale Semiconductor, Inc. | Method of forming nanocrystals |
| CN101807576A (zh) * | 2009-02-13 | 2010-08-18 | 中国科学院微电子研究所 | 纳米晶浮栅非易失存储器及其制作方法 |
| JP5535227B2 (ja) * | 2009-09-25 | 2014-07-02 | 株式会社東芝 | 不揮発性半導体メモリ |
-
2011
- 2011-04-12 US US13/085,230 patent/US8329543B2/en not_active Expired - Fee Related
-
2012
- 2012-04-11 JP JP2012090521A patent/JP2012222364A/ja active Pending
- 2012-04-12 CN CN201210106456.7A patent/CN102738005B/zh not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2011199272A5 (enExample) | ||
| JP2013048246A5 (enExample) | ||
| JP2010521061A5 (enExample) | ||
| JP2013179122A5 (enExample) | ||
| JP2014082389A5 (ja) | 半導体装置の作製方法 | |
| JP2012114422A5 (ja) | 半導体装置 | |
| JP2013093546A5 (enExample) | ||
| JP2013070070A5 (ja) | 半導体装置及びその作製方法 | |
| JP2013038401A5 (enExample) | ||
| JP2013038399A5 (ja) | 半導体装置 | |
| JP2009038368A5 (enExample) | ||
| JP2013008936A5 (ja) | 半導体装置 | |
| JP2012506160A5 (enExample) | ||
| JP2011233880A5 (ja) | 半導体装置 | |
| JP2011181906A5 (ja) | 半導体装置 | |
| JP2012118545A5 (enExample) | ||
| JP2008294408A5 (enExample) | ||
| JP2011238909A5 (enExample) | ||
| JP2012054547A5 (ja) | 半導体装置の作製方法 | |
| JP2012134467A5 (ja) | 半導体装置の作製方法 | |
| WO2012074872A3 (en) | Silicon and silicon germanium nanowire structures | |
| JP2012147013A5 (ja) | 表示装置 | |
| JP2012009701A5 (enExample) | ||
| JP2009049393A5 (enExample) | ||
| JP2011258940A5 (enExample) |