CN102738005B - 用于形成具有纳米晶体的半导体器件的方法 - Google Patents

用于形成具有纳米晶体的半导体器件的方法 Download PDF

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Publication number
CN102738005B
CN102738005B CN201210106456.7A CN201210106456A CN102738005B CN 102738005 B CN102738005 B CN 102738005B CN 201210106456 A CN201210106456 A CN 201210106456A CN 102738005 B CN102738005 B CN 102738005B
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CN
China
Prior art keywords
nanocrystals
nanocrystal
insulating layer
semiconductor device
insulating barrier
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Expired - Fee Related
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CN201210106456.7A
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English (en)
Chinese (zh)
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CN102738005A (zh
Inventor
姜盛泽
J·A·耶特
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NXP USA Inc
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Freescale Semiconductor Inc
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Publication of CN102738005A publication Critical patent/CN102738005A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/697—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes having trapping at multiple separated sites, e.g. multi-particles trapping sites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
CN201210106456.7A 2011-04-12 2012-04-12 用于形成具有纳米晶体的半导体器件的方法 Expired - Fee Related CN102738005B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/085,230 US8329543B2 (en) 2011-04-12 2011-04-12 Method for forming a semiconductor device having nanocrystals
US13/085,230 2011-04-12

Publications (2)

Publication Number Publication Date
CN102738005A CN102738005A (zh) 2012-10-17
CN102738005B true CN102738005B (zh) 2016-08-31

Family

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CN201210106456.7A Expired - Fee Related CN102738005B (zh) 2011-04-12 2012-04-12 用于形成具有纳米晶体的半导体器件的方法

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Country Link
US (1) US8329543B2 (enExample)
JP (1) JP2012222364A (enExample)
CN (1) CN102738005B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8679912B2 (en) * 2012-01-31 2014-03-25 Freescale Semiconductor, Inc. Semiconductor device having different non-volatile memories having nanocrystals of differing densities and method therefor
CN104299904B (zh) * 2013-07-16 2017-09-26 中芯国际集成电路制造(上海)有限公司 闪存单元的形成方法
US11173235B2 (en) 2016-07-15 2021-11-16 Cook Regentec Llc Nitrite eluting devices and methods of use thereof
JP7079762B2 (ja) * 2019-10-28 2022-06-02 キオクシア株式会社 不揮発性半導体記憶装置及びその製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6808986B2 (en) * 2002-08-30 2004-10-26 Freescale Semiconductor, Inc. Method of forming nanocrystals in a memory device
CN101154575A (zh) * 2006-04-04 2008-04-02 三星电子株式会社 具有在金属氧化物介质层中的电荷存储纳米晶体的集成电路器件栅结构及其制造方法
CN101330008A (zh) * 2007-06-20 2008-12-24 中国科学院微电子研究所 一种制作金属纳米晶非挥发性存储器的方法
US7550802B2 (en) * 2002-07-23 2009-06-23 Asahi Glass Company, Limited Nonvolatile semiconductor memory device and manufacturing process of the same
CN101807576A (zh) * 2009-02-13 2010-08-18 中国科学院微电子研究所 纳米晶浮栅非易失存储器及其制作方法
US7799634B2 (en) * 2008-12-19 2010-09-21 Freescale Semiconductor, Inc. Method of forming nanocrystals

Family Cites Families (8)

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US5714766A (en) 1995-09-29 1998-02-03 International Business Machines Corporation Nano-structure memory device
US6060743A (en) 1997-05-21 2000-05-09 Kabushiki Kaisha Toshiba Semiconductor memory device having multilayer group IV nanocrystal quantum dot floating gate and method of manufacturing the same
JP4532086B2 (ja) * 2003-08-28 2010-08-25 シャープ株式会社 微粒子含有体の製造方法
JP4072621B2 (ja) * 2003-10-23 2008-04-09 国立大学法人名古屋大学 シリコンナノ結晶の作製方法及びフローティングゲート型メモリキャパシタ構造の作製方法
US20060189079A1 (en) * 2005-02-24 2006-08-24 Merchant Tushar P Method of forming nanoclusters
KR100874944B1 (ko) * 2007-02-02 2008-12-19 삼성전자주식회사 반도체 메모리 소자 제조 방법 및 이에 따른 반도체 메모리소자
US7898850B2 (en) * 2007-10-12 2011-03-01 Micron Technology, Inc. Memory cells, electronic systems, methods of forming memory cells, and methods of programming memory cells
JP5535227B2 (ja) * 2009-09-25 2014-07-02 株式会社東芝 不揮発性半導体メモリ

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7550802B2 (en) * 2002-07-23 2009-06-23 Asahi Glass Company, Limited Nonvolatile semiconductor memory device and manufacturing process of the same
US6808986B2 (en) * 2002-08-30 2004-10-26 Freescale Semiconductor, Inc. Method of forming nanocrystals in a memory device
CN101154575A (zh) * 2006-04-04 2008-04-02 三星电子株式会社 具有在金属氧化物介质层中的电荷存储纳米晶体的集成电路器件栅结构及其制造方法
CN101330008A (zh) * 2007-06-20 2008-12-24 中国科学院微电子研究所 一种制作金属纳米晶非挥发性存储器的方法
US7799634B2 (en) * 2008-12-19 2010-09-21 Freescale Semiconductor, Inc. Method of forming nanocrystals
CN101807576A (zh) * 2009-02-13 2010-08-18 中国科学院微电子研究所 纳米晶浮栅非易失存储器及其制作方法

Also Published As

Publication number Publication date
US8329543B2 (en) 2012-12-11
JP2012222364A (ja) 2012-11-12
CN102738005A (zh) 2012-10-17
US20120264277A1 (en) 2012-10-18

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Address after: Texas in the United States

Patentee after: NXP USA, Inc.

Address before: Texas in the United States

Patentee before: FREESCALE SEMICONDUCTOR, Inc.

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Granted publication date: 20160831