CN113206010B - 半导体器件及其制作方法 - Google Patents
半导体器件及其制作方法 Download PDFInfo
- Publication number
- CN113206010B CN113206010B CN202110486421.XA CN202110486421A CN113206010B CN 113206010 B CN113206010 B CN 113206010B CN 202110486421 A CN202110486421 A CN 202110486421A CN 113206010 B CN113206010 B CN 113206010B
- Authority
- CN
- China
- Prior art keywords
- oxide layer
- region
- forming
- floating gate
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 64
- 239000004065 semiconductor Substances 0.000 title claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 238000005468 ion implantation Methods 0.000 claims abstract description 26
- 230000008569 process Effects 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000005280 amorphization Methods 0.000 claims description 16
- 238000005229 chemical vapour deposition Methods 0.000 claims description 14
- 229910052785 arsenic Inorganic materials 0.000 claims description 6
- -1 arsenic ions Chemical class 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 abstract description 11
- 230000015654 memory Effects 0.000 description 23
- 239000007789 gas Substances 0.000 description 13
- 239000010408 film Substances 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000000750 progressive effect Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- RJCRUVXAWQRZKQ-UHFFFAOYSA-N oxosilicon;silicon Chemical compound [Si].[Si]=O RJCRUVXAWQRZKQ-UHFFFAOYSA-N 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H01L29/42328—Gate electrodes for transistors with a floating gate with at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
Abstract
Description
Claims (11)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110486421.XA CN113206010B (zh) | 2021-04-30 | 2021-04-30 | 半导体器件及其制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110486421.XA CN113206010B (zh) | 2021-04-30 | 2021-04-30 | 半导体器件及其制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN113206010A CN113206010A (zh) | 2021-08-03 |
CN113206010B true CN113206010B (zh) | 2023-10-24 |
Family
ID=77028528
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110486421.XA Active CN113206010B (zh) | 2021-04-30 | 2021-04-30 | 半导体器件及其制作方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN113206010B (zh) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5918116A (en) * | 1994-11-30 | 1999-06-29 | Lucent Technologies Inc. | Process for forming gate oxides possessing different thicknesses on a semiconductor substrate |
CN1420567A (zh) * | 2001-11-21 | 2003-05-28 | 旺宏电子股份有限公司 | 氮化只读存储器的结构及其制造方法 |
CN1577806A (zh) * | 2003-06-27 | 2005-02-09 | 旺宏电子股份有限公司 | 非挥发性存储单元及其形成方法 |
CN102104044A (zh) * | 2009-12-17 | 2011-06-22 | 中芯国际集成电路制造(上海)有限公司 | 分离栅快闪存储器及其制造方法 |
CN103715144A (zh) * | 2012-09-29 | 2014-04-09 | 中芯国际集成电路制造(上海)有限公司 | 分立栅存储器件及其形成方法 |
CN107305892A (zh) * | 2016-04-20 | 2017-10-31 | 硅存储技术公司 | 使用两个多晶硅沉积步骤来形成三栅极非易失性闪存单元对的方法 |
CN111133515A (zh) * | 2017-10-04 | 2020-05-08 | 硅存储技术股份有限公司 | 制造具有擦除栅极的分裂栅极闪存存储器单元的方法 |
-
2021
- 2021-04-30 CN CN202110486421.XA patent/CN113206010B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5918116A (en) * | 1994-11-30 | 1999-06-29 | Lucent Technologies Inc. | Process for forming gate oxides possessing different thicknesses on a semiconductor substrate |
CN1420567A (zh) * | 2001-11-21 | 2003-05-28 | 旺宏电子股份有限公司 | 氮化只读存储器的结构及其制造方法 |
CN1577806A (zh) * | 2003-06-27 | 2005-02-09 | 旺宏电子股份有限公司 | 非挥发性存储单元及其形成方法 |
CN102104044A (zh) * | 2009-12-17 | 2011-06-22 | 中芯国际集成电路制造(上海)有限公司 | 分离栅快闪存储器及其制造方法 |
CN103715144A (zh) * | 2012-09-29 | 2014-04-09 | 中芯国际集成电路制造(上海)有限公司 | 分立栅存储器件及其形成方法 |
CN107305892A (zh) * | 2016-04-20 | 2017-10-31 | 硅存储技术公司 | 使用两个多晶硅沉积步骤来形成三栅极非易失性闪存单元对的方法 |
CN111133515A (zh) * | 2017-10-04 | 2020-05-08 | 硅存储技术股份有限公司 | 制造具有擦除栅极的分裂栅极闪存存储器单元的方法 |
Non-Patent Citations (1)
Title |
---|
《集成电路器件工艺先导技术研究进展》;叶甜春;《科技导报》;第37卷(第3期);第77页左栏第5行-第81页右栏第10行 * |
Also Published As
Publication number | Publication date |
---|---|
CN113206010A (zh) | 2021-08-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6117733A (en) | Poly tip formation and self-align source process for split-gate flash cell | |
US6380035B1 (en) | Poly tip formation and self-align source process for split-gate flash cell | |
JP2928986B2 (ja) | 半導体メモリデバイス、半導体メモリアレイ、半導体メモリデバイスの製造方法および半導体メモリデバイスの書込み方法 | |
US5930631A (en) | Method of making double-poly MONOS flash EEPROM cell | |
US8884352B2 (en) | Method for manufacturing a memory cell, a method for manufacturing a memory cell arrangement, and a memory cell | |
US5789297A (en) | Method of making EEPROM cell device with polyspacer floating gate | |
US6287917B1 (en) | Process for fabricating an MNOS flash memory device | |
US5703388A (en) | Double-poly monos flash EEPROM cell | |
US7115949B2 (en) | Method of forming a semiconductor device in a semiconductor layer and structure thereof | |
US8470669B2 (en) | System and method for EEPROM architecture | |
US5856223A (en) | Method for manufacturing self-aligned split-gate flash memory cells | |
US6436766B1 (en) | Process for fabricating high density memory cells using a polysilicon hard mask | |
US20080093646A1 (en) | Non-volatile memory device and method for fabricating the same | |
US20070042539A1 (en) | Method of manufacturing a non-volatile memory device | |
KR100839057B1 (ko) | 불균일한 표면의 플로팅 게이트 및 제어 게이트를 갖는비휘발성 메모리 셀 | |
US20060110942A1 (en) | Method of manufacturing flash memory device | |
US7141850B2 (en) | Gated semiconductor assemblies and methods of forming gated semiconductor assemblies | |
KR101277147B1 (ko) | 이이피롬 장치 및 그 제조 방법 | |
US5750428A (en) | Self-aligned non-volatile process with differentially grown gate oxide thickness | |
US7741179B2 (en) | Method of manufacturing flash semiconductor device | |
US6399442B1 (en) | Method of manufacturing an integrated semiconductor device having a nonvolatile floating gate memory, and related integrated device | |
US6008087A (en) | Method to form high density NAND structure nonvolatile memories | |
US6025229A (en) | Method of fabricating split-gate source side injection flash memory array | |
US5925908A (en) | Integrated circuit including a non-volatile memory device and a semiconductor device | |
CN113206010B (zh) | 半导体器件及其制作方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20210924 Address after: 510535 building a, 136 Kaiyuan Avenue, Guangzhou Development Zone, Guangdong Province Applicant after: Guangdong Dawan District integrated circuit and System Application Research Institute Applicant after: AoXin integrated circuit technology (Guangdong) Co.,Ltd. Address before: 510535 building a, 136 Kaiyuan Avenue, Guangzhou Development Zone, Guangdong Province Applicant before: Guangdong Dawan District integrated circuit and System Application Research Institute |
|
GR01 | Patent grant | ||
GR01 | Patent grant |