JP2012199405A - 半導体素子の製造方法 - Google Patents
半導体素子の製造方法 Download PDFInfo
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- JP2012199405A JP2012199405A JP2011062940A JP2011062940A JP2012199405A JP 2012199405 A JP2012199405 A JP 2012199405A JP 2011062940 A JP2011062940 A JP 2011062940A JP 2011062940 A JP2011062940 A JP 2011062940A JP 2012199405 A JP2012199405 A JP 2012199405A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 102
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 87
- 239000002184 metal Substances 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 230000001678 irradiating effect Effects 0.000 claims abstract description 3
- 238000005530 etching Methods 0.000 claims description 17
- 239000010410 layer Substances 0.000 description 132
- 229910052594 sapphire Inorganic materials 0.000 description 52
- 239000010980 sapphire Substances 0.000 description 52
- 238000000034 method Methods 0.000 description 38
- 230000008569 process Effects 0.000 description 23
- 230000015572 biosynthetic process Effects 0.000 description 16
- 239000007789 gas Substances 0.000 description 13
- 230000001681 protective effect Effects 0.000 description 10
- 230000005496 eutectics Effects 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000013256 coordination polymer Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000006023 eutectic alloy Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Drying Of Semiconductors (AREA)
- Laser Beam Processing (AREA)
Abstract
【解決手段】 半導体素子の製造方法は、(a)成長基板を準備する工程と、(b)前記成長基板上に半導体層を形成する工程と、(c)前記半導体層を複数の素子部に分割するとともに、各素子部間の半導体層の少なくとも一部を犠牲層として残す工程と、(d)前記半導体層上に金属層を形成する工程と、(e)前記半導体層に、前記金属層を介して支持基板を設ける工程と、(f)前記成長基板に、前記素子部の全部を覆い、かつ前記犠牲層の外縁内に収まるようにレーザーを照射することにより、前記成長基板を前記半導体層から剥離する工程とを含む。
【選択図】 図9
Description
なお、上述の実施例では、LLO犠牲層24が各チップ領域2を取り囲むように作成し、各チップ領域2のLLO犠牲層24間には幅M1のストリート部20s1が設けられサファイア基板1の表面が露出しているが、図12に示すように、横方向に隣り合う各チップ領域2のLLO犠牲層24間でのみサファイア基板1の表面が露出するようにしてもよい。また、当然に、縦方向に隣り合う各チップ領域2のLLO犠牲層24間でのみサファイア基板1の表面が露出するようにしてもよいし、一列又は複数列置きにサファイア基板1の表面が露出するようにしてもよい。さらに、縦横で一列置きにサファイア基板1の表面が露出するようにしてもよい。
Claims (5)
- (a)成長基板を準備する工程と、
(b)前記成長基板上に半導体層を形成する工程と、
(c)前記半導体層を複数の素子部に分割するとともに、各素子部間の半導体層の少なくとも一部を犠牲層として残す工程と、
(d)前記半導体層上に金属層を形成する工程と、
(e)前記半導体層に、前記金属層を介して支持基板を設ける工程と、
(f)前記成長基板に、前記素子部の全部を覆い、かつ前記犠牲層の外縁内に収まるようにレーザーを照射することにより、前記成長基板を前記半導体層から剥離する工程と
を含む半導体素子の製造方法。 - 前記工程(c)は、
(c1)前記半導体層を第1の幅の分割溝により前記成長基板の表面が露出するまでエッチングする第1のエッチング工程と、
(c2)前記半導体層を前記第1の幅よりも広い第2の幅で、前記犠牲層となる領域を残して前記半導体層をエッチングする第2のエッチング工程とを含む請求項1記載の半導体素子の製造方法。 - 前記犠牲膜は、前記半導体層の厚みの1/8以下である請求項1又は2記載の半導体素子の製造方法。
- 前記犠牲膜は、前記半導体層の端部から10〜20μmの幅で形成される請求項1〜3のいずれか1項に記載の半導体素子の製造方法。
- 前記工程(f)において、前記犠牲層の幅の半分以上の領域にレーザーが照射される請求項1〜4のいずれか1項に記載の半導体素子の製造方法。
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JP2011062940A JP5739698B2 (ja) | 2011-03-22 | 2011-03-22 | 半導体素子の製造方法 |
US13/423,571 US8790944B2 (en) | 2011-03-22 | 2012-03-19 | Manufacturing method of semiconductor element |
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JP2011062940A JP5739698B2 (ja) | 2011-03-22 | 2011-03-22 | 半導体素子の製造方法 |
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JP2012199405A true JP2012199405A (ja) | 2012-10-18 |
JP5739698B2 JP5739698B2 (ja) | 2015-06-24 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014132606A (ja) * | 2013-01-04 | 2014-07-17 | Stanley Electric Co Ltd | 窒化物半導体素子の製造方法 |
JP2016502265A (ja) * | 2012-11-12 | 2016-01-21 | 晶元光▲電▼股▲ふん▼有限公司 | 半導体発光素子及びその製造方法 |
WO2017171947A1 (en) * | 2016-03-29 | 2017-10-05 | X Development Llc | Micro-size devices formed by etch of sacrificial epitaxial layers |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010109015A (ja) * | 2008-10-28 | 2010-05-13 | Panasonic Electric Works Co Ltd | 半導体発光素子の製造方法 |
KR101945791B1 (ko) * | 2012-03-14 | 2019-02-11 | 삼성전자주식회사 | 반도체 발광소자의 제조방법 |
US9768271B2 (en) | 2013-02-22 | 2017-09-19 | Micron Technology, Inc. | Methods, devices, and systems related to forming semiconductor power devices with a handle substrate |
US9698053B2 (en) * | 2013-11-25 | 2017-07-04 | The Board Of Trustees Of The Leland Stanford Junior University | Laser liftoff of epitaxial thin film structures |
EP3221903B1 (en) | 2015-07-14 | 2019-06-19 | Goertek Inc | Transferring method of micro-led, and manufacturing method of micro-led device |
DE102015116983A1 (de) * | 2015-10-06 | 2017-04-06 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil |
JP6453796B2 (ja) * | 2016-03-14 | 2019-01-16 | 株式会社東芝 | 半導体装置およびその製造方法 |
CN111430303A (zh) * | 2019-01-09 | 2020-07-17 | 桑迪士克科技有限责任公司 | 单一化半导体裸芯的方法以及由其形成的单一化的裸芯 |
Citations (4)
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JP2001244503A (ja) * | 1999-12-21 | 2001-09-07 | Nichia Chem Ind Ltd | 窒化物半導体発光素子 |
JP2008140871A (ja) * | 2006-11-30 | 2008-06-19 | Toyoda Gosei Co Ltd | Iii−v族半導体素子、およびその製造方法 |
JP2008235362A (ja) * | 2007-03-16 | 2008-10-02 | Toyoda Gosei Co Ltd | Iii−v族半導体素子、およびその製造方法 |
JP2010141084A (ja) * | 2008-12-11 | 2010-06-24 | Stanley Electric Co Ltd | 半導体発光素子の製造方法 |
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JP5016808B2 (ja) | 2005-11-08 | 2012-09-05 | ローム株式会社 | 窒化物半導体発光素子及び窒化物半導体発光素子製造方法 |
JP2011029574A (ja) * | 2009-03-31 | 2011-02-10 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体素子の製造方法 |
TWI485879B (zh) * | 2009-04-09 | 2015-05-21 | Lextar Electronics Corp | 發光二極體晶片及其製造方法 |
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- 2011-03-22 JP JP2011062940A patent/JP5739698B2/ja active Active
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- 2012-03-19 US US13/423,571 patent/US8790944B2/en active Active
Patent Citations (4)
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JP2001244503A (ja) * | 1999-12-21 | 2001-09-07 | Nichia Chem Ind Ltd | 窒化物半導体発光素子 |
JP2008140871A (ja) * | 2006-11-30 | 2008-06-19 | Toyoda Gosei Co Ltd | Iii−v族半導体素子、およびその製造方法 |
JP2008235362A (ja) * | 2007-03-16 | 2008-10-02 | Toyoda Gosei Co Ltd | Iii−v族半導体素子、およびその製造方法 |
JP2010141084A (ja) * | 2008-12-11 | 2010-06-24 | Stanley Electric Co Ltd | 半導体発光素子の製造方法 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016502265A (ja) * | 2012-11-12 | 2016-01-21 | 晶元光▲電▼股▲ふん▼有限公司 | 半導体発光素子及びその製造方法 |
US9735312B2 (en) | 2012-11-12 | 2017-08-15 | Epistar Corporation | Semiconductor light emitting device and method of fabricating the same |
US10283669B2 (en) | 2012-11-12 | 2019-05-07 | Epistar Corporation | Semiconductor light emitting device and method of fabricating the same |
US10651335B2 (en) | 2012-11-12 | 2020-05-12 | Epistar Corporation | Semiconductor light emitting device and method of fabricating the same |
US11251328B2 (en) | 2012-11-12 | 2022-02-15 | Epistar Corporation | Semiconductor light emitting device and method of fabricating the same |
US11791436B2 (en) | 2012-11-12 | 2023-10-17 | Epistar Corporation | Semiconductor light emitting device and method of fabricating the same |
JP2014132606A (ja) * | 2013-01-04 | 2014-07-17 | Stanley Electric Co Ltd | 窒化物半導体素子の製造方法 |
WO2017171947A1 (en) * | 2016-03-29 | 2017-10-05 | X Development Llc | Micro-size devices formed by etch of sacrificial epitaxial layers |
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JP5739698B2 (ja) | 2015-06-24 |
US8790944B2 (en) | 2014-07-29 |
US20120244683A1 (en) | 2012-09-27 |
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