JP2012138626A - 開いたピット中に延びる能動層を有する発光デバイス及びその製造方法 - Google Patents
開いたピット中に延びる能動層を有する発光デバイス及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title abstract description 19
- 150000004767 nitrides Chemical class 0.000 claims abstract description 20
- 238000002347 injection Methods 0.000 claims description 25
- 239000007924 injection Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 abstract description 48
- 238000000034 method Methods 0.000 abstract description 17
- 239000010410 layer Substances 0.000 description 311
- 229910002601 GaN Inorganic materials 0.000 description 48
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 47
- 239000000463 material Substances 0.000 description 22
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 21
- 229910010271 silicon carbide Inorganic materials 0.000 description 21
- 230000005855 radiation Effects 0.000 description 19
- 230000004888 barrier function Effects 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 238000000151 deposition Methods 0.000 description 13
- 229910052594 sapphire Inorganic materials 0.000 description 13
- 239000010980 sapphire Substances 0.000 description 13
- 230000008021 deposition Effects 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- 238000012360 testing method Methods 0.000 description 10
- 230000005540 biological transmission Effects 0.000 description 9
- 239000013078 crystal Substances 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052738 indium Inorganic materials 0.000 description 8
- 230000002829 reductive effect Effects 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000005401 electroluminescence Methods 0.000 description 7
- 229910052733 gallium Inorganic materials 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000012544 monitoring process Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000005424 photoluminescence Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000004377 microelectronic Methods 0.000 description 4
- 230000007480 spreading Effects 0.000 description 4
- 238000003892 spreading Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 238000003917 TEM image Methods 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000013256 coordination polymer Substances 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910000480 nickel oxide Inorganic materials 0.000 description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910003445 palladium oxide Inorganic materials 0.000 description 1
- JQPTYAILLJKUCY-UHFFFAOYSA-N palladium(ii) oxide Chemical compound [O-2].[Pd+2] JQPTYAILLJKUCY-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Abstract
【解決手段】発光デバイスは、複数の層を備える能動領域と、能動領域が配置されるピット開き領域とを含んでいる。ピット開き領域は、複数の層の能動領域がピット中に延びて入るのに十分な大きさまで複数のピットの開口の大きさを広げるように構成されている。能動領域は複数の量子井戸層を備えている。ピット開き領域は、超格子構造を備えている。ピットは、その対応する転位を取り囲むことがあり、複数の層はそれぞれの転位まで延びている。複数のピットのうちの少なくとも1つは、ピット開き層とピット開き層が形成された基板との間に配置された層で生じる。能動領域は、III族窒化物をベースにした能動領域であってもよい。そのような発光デバイスの製造方法も提供される。
【選択図】図1
Description
また、発光デバイスの製造方法は、発光デバイスの能動層が成長される層の成長表面に低移動度の種を生成するように半導体材料層の成長条件を制御して、半導体材料層の貫通転位にピットを開くステップと、半導体材料層のピット中に延びて入るように能動層を成長させるステップと、ピット中に延びて入るように能動層上に正孔注入層を成長させるステップとを含んでいる。
Claims (1)
- III族窒化物をベースにした複数の層を含む能動領域と、
該能動領域が配置され、複数の開いたピットを含むピット開き領域とを備え、
前記能動領域は、複数の量子井戸層及び正孔注入層を含み、さらに、前記量子井戸層及び前記正孔注入層は、前記ピットを閉じることなしに延びて前記ピット中に入っており、
前記正孔注入層上に、前記ピット中に延びて入るIII族窒化物をベースにしたコンタクト層を含み、該コンタクト層は前記ピットを閉じていることを特徴とする発光デバイス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/118,987 US7446345B2 (en) | 2005-04-29 | 2005-04-29 | Light emitting devices with active layers that extend into opened pits |
US11/118,987 | 2005-04-29 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2008508828A Division JP5415756B2 (ja) | 2005-04-29 | 2006-01-24 | 開いたピット中に延びる能動層を有する発光デバイス及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2012138626A true JP2012138626A (ja) | 2012-07-19 |
JP5603366B2 JP5603366B2 (ja) | 2014-10-08 |
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JP2008508828A Active JP5415756B2 (ja) | 2005-04-29 | 2006-01-24 | 開いたピット中に延びる能動層を有する発光デバイス及びその製造方法 |
JP2012083854A Active JP5603366B2 (ja) | 2005-04-29 | 2012-04-02 | 開いたピット中に延びる能動層を有する発光デバイス及びその製造方法 |
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JP2008508828A Active JP5415756B2 (ja) | 2005-04-29 | 2006-01-24 | 開いたピット中に延びる能動層を有する発光デバイス及びその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7446345B2 (ja) |
JP (2) | JP5415756B2 (ja) |
DE (1) | DE112006001084B4 (ja) |
TW (1) | TWI437723B (ja) |
WO (1) | WO2006118623A1 (ja) |
Cited By (1)
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DE112006001084B4 (de) | 2020-03-12 |
DE112006001084T5 (de) | 2008-05-29 |
JP5603366B2 (ja) | 2014-10-08 |
JP2008539585A (ja) | 2008-11-13 |
TWI437723B (zh) | 2014-05-11 |
TW200638563A (en) | 2006-11-01 |
WO2006118623A1 (en) | 2006-11-09 |
US7611917B2 (en) | 2009-11-03 |
US20060246612A1 (en) | 2006-11-02 |
US7446345B2 (en) | 2008-11-04 |
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US20090029493A1 (en) | 2009-01-29 |
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