JP2012089895A - インデックスガイド型埋め込みヘテロ構造窒化物レーザダイオード構造 - Google Patents
インデックスガイド型埋め込みヘテロ構造窒化物レーザダイオード構造 Download PDFInfo
- Publication number
- JP2012089895A JP2012089895A JP2012022808A JP2012022808A JP2012089895A JP 2012089895 A JP2012089895 A JP 2012089895A JP 2012022808 A JP2012022808 A JP 2012022808A JP 2012022808 A JP2012022808 A JP 2012022808A JP 2012089895 A JP2012089895 A JP 2012089895A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- laser diode
- buried
- ridge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
【解決手段】インデックスガイド型埋め込みヘテロ構造窒化物レーザダイオード構造100は、第1、第2及び第3の面を有し、クラッド構造121及びクラッド層125並びに前記クラッド構造121と前記クラッド層125との間に配置された多重量子井戸構造145を有するリッジ構造111と、前記リッジ構造111の前記第1、第2及び第3の面の上に存在し、電気的接触のために前記リッジ構造111の前記第3の面への開口を有する埋め込み層155とを有する。
【選択図】図1
Description
リッジウエーブガイド(導波管)は半導体レーザの横方向の光学的閉じ込め構造を形成することができるので、リッジは半導体レーザのエッジエミッション(端部からの光放射)源を正確に画定する。リッジウエーブガイドは典型的には、半導体レーザ構造の活性半導体層の上部の、概ね平らな上面と傾斜した側壁を有する半導体材料の小型のリッジである。
110 成長基体
121 短周期超格子n型クラッド構造
125 p型クラッド層
145 多重量子井戸構造
155 埋め込み層
185 キャップ層
190 p型電極
195 n型電極
Claims (1)
- 第1、第2及び第3の面を有し、クラッド構造及びクラッド層並びに前記クラッド構造と前記クラッド層との間に配置された多重量子井戸構造を有するリッジ構造と、
前記リッジ構造の前記第1、第2及び第3の面の上に存在し、電気的接触のために前記リッジ構造の前記第3の面への開口を有しかつMgドープAlGaN層である第1埋め込み層と、
前記リッジ構造の前記第3の面と前記開口を介して接触するように、前記第1埋め込み層の上に存在する第2埋め込み層と、
を有する、インデックスガイド型埋め込みヘテロ構造窒化物レーザダイオード構造。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/408,458 US6570898B2 (en) | 1999-09-29 | 1999-09-29 | Structure and method for index-guided buried heterostructure AlGalnN laser diodes |
US408458 | 1999-09-29 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000287812A Division JP2001111172A (ja) | 1999-09-29 | 2000-09-22 | インデックスガイド型埋め込みヘテロ構造窒化物レーザダイオード構造 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2012089895A true JP2012089895A (ja) | 2012-05-10 |
Family
ID=23616377
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000287812A Pending JP2001111172A (ja) | 1999-09-29 | 2000-09-22 | インデックスガイド型埋め込みヘテロ構造窒化物レーザダイオード構造 |
JP2012022808A Pending JP2012089895A (ja) | 1999-09-29 | 2012-02-06 | インデックスガイド型埋め込みヘテロ構造窒化物レーザダイオード構造 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000287812A Pending JP2001111172A (ja) | 1999-09-29 | 2000-09-22 | インデックスガイド型埋め込みヘテロ構造窒化物レーザダイオード構造 |
Country Status (2)
Country | Link |
---|---|
US (2) | US6570898B2 (ja) |
JP (2) | JP2001111172A (ja) |
Families Citing this family (68)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6593193B2 (en) * | 2001-02-27 | 2003-07-15 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
US6746948B2 (en) * | 2001-09-17 | 2004-06-08 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating semiconductor light-emitting device |
US7531829B2 (en) * | 2003-06-26 | 2009-05-12 | Mears Technologies, Inc. | Semiconductor device including regions of band-engineered semiconductor superlattice to reduce device-on resistance |
US7531850B2 (en) * | 2003-06-26 | 2009-05-12 | Mears Technologies, Inc. | Semiconductor device including a memory cell with a negative differential resistance (NDR) device |
US7598515B2 (en) * | 2003-06-26 | 2009-10-06 | Mears Technologies, Inc. | Semiconductor device including a strained superlattice and overlying stress layer and related methods |
US20050279991A1 (en) * | 2003-06-26 | 2005-12-22 | Rj Mears, Llc | Semiconductor device including a superlattice having at least one group of substantially undoped layers |
US7586116B2 (en) * | 2003-06-26 | 2009-09-08 | Mears Technologies, Inc. | Semiconductor device having a semiconductor-on-insulator configuration and a superlattice |
US20060273299A1 (en) * | 2003-06-26 | 2006-12-07 | Rj Mears, Llc | Method for making a semiconductor device including a dopant blocking superlattice |
US7202494B2 (en) | 2003-06-26 | 2007-04-10 | Rj Mears, Llc | FINFET including a superlattice |
US7045813B2 (en) | 2003-06-26 | 2006-05-16 | Rj Mears, Llc | Semiconductor device including a superlattice with regions defining a semiconductor junction |
US6958486B2 (en) * | 2003-06-26 | 2005-10-25 | Rj Mears, Llc | Semiconductor device including band-engineered superlattice |
US7045377B2 (en) * | 2003-06-26 | 2006-05-16 | Rj Mears, Llc | Method for making a semiconductor device including a superlattice and adjacent semiconductor layer with doped regions defining a semiconductor junction |
US20060220118A1 (en) * | 2003-06-26 | 2006-10-05 | Rj Mears, Llc | Semiconductor device including a dopant blocking superlattice |
US20060243964A1 (en) * | 2003-06-26 | 2006-11-02 | Rj Mears, Llc | Method for making a semiconductor device having a semiconductor-on-insulator configuration and a superlattice |
US7612366B2 (en) | 2003-06-26 | 2009-11-03 | Mears Technologies, Inc. | Semiconductor device including a strained superlattice layer above a stress layer |
US7535041B2 (en) * | 2003-06-26 | 2009-05-19 | Mears Technologies, Inc. | Method for making a semiconductor device including regions of band-engineered semiconductor superlattice to reduce device-on resistance |
US7586165B2 (en) | 2003-06-26 | 2009-09-08 | Mears Technologies, Inc. | Microelectromechanical systems (MEMS) device including a superlattice |
US20060292765A1 (en) * | 2003-06-26 | 2006-12-28 | Rj Mears, Llc | Method for Making a FINFET Including a Superlattice |
US20070020860A1 (en) * | 2003-06-26 | 2007-01-25 | Rj Mears, Llc | Method for Making Semiconductor Device Including a Strained Superlattice and Overlying Stress Layer and Related Methods |
US20070020833A1 (en) * | 2003-06-26 | 2007-01-25 | Rj Mears, Llc | Method for Making a Semiconductor Device Including a Channel with a Non-Semiconductor Layer Monolayer |
US7446002B2 (en) * | 2003-06-26 | 2008-11-04 | Mears Technologies, Inc. | Method for making a semiconductor device comprising a superlattice dielectric interface layer |
US7227174B2 (en) * | 2003-06-26 | 2007-06-05 | Rj Mears, Llc | Semiconductor device including a superlattice and adjacent semiconductor layer with doped regions defining a semiconductor junction |
US7659539B2 (en) | 2003-06-26 | 2010-02-09 | Mears Technologies, Inc. | Semiconductor device including a floating gate memory cell with a superlattice channel |
US7153763B2 (en) | 2003-06-26 | 2006-12-26 | Rj Mears, Llc | Method for making a semiconductor device including band-engineered superlattice using intermediate annealing |
US7514328B2 (en) * | 2003-06-26 | 2009-04-07 | Mears Technologies, Inc. | Method for making a semiconductor device including shallow trench isolation (STI) regions with a superlattice therebetween |
US20060289049A1 (en) * | 2003-06-26 | 2006-12-28 | Rj Mears, Llc | Semiconductor Device Having a Semiconductor-on-Insulator (SOI) Configuration and Including a Superlattice on a Thin Semiconductor Layer |
US7531828B2 (en) * | 2003-06-26 | 2009-05-12 | Mears Technologies, Inc. | Semiconductor device including a strained superlattice between at least one pair of spaced apart stress regions |
US7491587B2 (en) * | 2003-06-26 | 2009-02-17 | Mears Technologies, Inc. | Method for making a semiconductor device having a semiconductor-on-insulator (SOI) configuration and including a superlattice on a thin semiconductor layer |
US20070063185A1 (en) * | 2003-06-26 | 2007-03-22 | Rj Mears, Llc | Semiconductor device including a front side strained superlattice layer and a back side stress layer |
US7229902B2 (en) * | 2003-06-26 | 2007-06-12 | Rj Mears, Llc | Method for making a semiconductor device including a superlattice with regions defining a semiconductor junction |
US20070015344A1 (en) * | 2003-06-26 | 2007-01-18 | Rj Mears, Llc | Method for Making a Semiconductor Device Including a Strained Superlattice Between at Least One Pair of Spaced Apart Stress Regions |
KR100576856B1 (ko) * | 2003-12-23 | 2006-05-10 | 삼성전기주식회사 | 질화물 반도체 발광소자 및 제조방법 |
KR100616540B1 (ko) * | 2004-03-31 | 2006-08-29 | 삼성전기주식회사 | 2파장 반도체 레이저 소자 및 그 제조방법 |
KR100818522B1 (ko) * | 2004-08-31 | 2008-03-31 | 삼성전기주식회사 | 레이저 다이오드의 제조방법 |
JP2006080341A (ja) * | 2004-09-10 | 2006-03-23 | New Japan Radio Co Ltd | 窒化物半導体装置及びその製造方法 |
JP4461980B2 (ja) * | 2004-09-22 | 2010-05-12 | 住友電気工業株式会社 | 半導体光素子 |
JP4536568B2 (ja) * | 2005-03-31 | 2010-09-01 | 住友電工デバイス・イノベーション株式会社 | Fetの製造方法 |
EP2797185B1 (en) * | 2005-06-22 | 2018-09-05 | MACOM Technology Solutions Holdings, Inc. | AIGalnN-based lasers produced using etched facet technology |
JP5255759B2 (ja) | 2005-11-14 | 2013-08-07 | パロ・アルト・リサーチ・センター・インコーポレーテッド | 半導体デバイス用超格子歪緩衝層 |
US7547925B2 (en) | 2005-11-14 | 2009-06-16 | Palo Alto Research Center Incorporated | Superlattice strain relief layer for semiconductor devices |
US20090053845A1 (en) * | 2005-11-14 | 2009-02-26 | Palo Alto Research Center Incorporated | Method For Controlling The Structure And Surface Qualities Of A Thin Film And Product Produced Thereby |
US7501299B2 (en) * | 2005-11-14 | 2009-03-10 | Palo Alto Research Center Incorporated | Method for controlling the structure and surface qualities of a thin film and product produced thereby |
US7517702B2 (en) * | 2005-12-22 | 2009-04-14 | Mears Technologies, Inc. | Method for making an electronic device including a poled superlattice having a net electrical dipole moment |
US20070187667A1 (en) * | 2005-12-22 | 2007-08-16 | Rj Mears, Llc | Electronic device including a selectively polable superlattice |
JP2007201195A (ja) * | 2006-01-26 | 2007-08-09 | Sumitomo Electric Ind Ltd | 窒化物半導体発光素子 |
US20070187697A1 (en) * | 2006-02-15 | 2007-08-16 | Liang-Wen Wu | Nitride based MQW light emitting diode having carrier supply layer |
WO2007098138A2 (en) * | 2006-02-21 | 2007-08-30 | Mears Technologies, Inc. | Semiconductor device comprising a lattice matching layer and associated methods |
KR100774458B1 (ko) * | 2006-02-27 | 2007-11-08 | 엘지전자 주식회사 | 반도체 레이저 소자 및 그 제조 방법 |
US20080054248A1 (en) * | 2006-09-06 | 2008-03-06 | Chua Christopher L | Variable period variable composition supperlattice and devices including same |
US8513643B2 (en) | 2006-09-06 | 2013-08-20 | Palo Alto Research Center Incorporated | Mixed alloy defect redirection region and devices including same |
US7781827B2 (en) | 2007-01-24 | 2010-08-24 | Mears Technologies, Inc. | Semiconductor device with a vertical MOSFET including a superlattice and related methods |
US7928425B2 (en) * | 2007-01-25 | 2011-04-19 | Mears Technologies, Inc. | Semiconductor device including a metal-to-semiconductor superlattice interface layer and related methods |
US7880161B2 (en) | 2007-02-16 | 2011-02-01 | Mears Technologies, Inc. | Multiple-wavelength opto-electronic device including a superlattice |
US7863066B2 (en) | 2007-02-16 | 2011-01-04 | Mears Technologies, Inc. | Method for making a multiple-wavelength opto-electronic device including a superlattice |
US7812339B2 (en) * | 2007-04-23 | 2010-10-12 | Mears Technologies, Inc. | Method for making a semiconductor device including shallow trench isolation (STI) regions with maskless superlattice deposition following STI formation and related structures |
KR101316492B1 (ko) | 2007-04-23 | 2013-10-10 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조 방법 |
US8073034B2 (en) * | 2007-06-01 | 2011-12-06 | Jds Uniphase Corporation | Mesa vertical-cavity surface-emitting laser |
JP5319623B2 (ja) * | 2010-08-06 | 2013-10-16 | 株式会社東芝 | 半導体発光素子 |
TWI491068B (zh) | 2012-11-08 | 2015-07-01 | Ind Tech Res Inst | 氮化物半導體結構 |
CN105900241B (zh) | 2013-11-22 | 2020-07-24 | 阿托梅拉公司 | 包括超晶格耗尽层堆叠的半导体装置和相关方法 |
WO2015077595A1 (en) | 2013-11-22 | 2015-05-28 | Mears Technologies, Inc. | Vertical semiconductor devices including superlattice punch through stop layer and related methods |
US9716147B2 (en) | 2014-06-09 | 2017-07-25 | Atomera Incorporated | Semiconductor devices with enhanced deterministic doping and related methods |
DE102014113380B4 (de) | 2014-09-17 | 2017-05-04 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von optoelektronischen Halbleiterchips |
US9722046B2 (en) | 2014-11-25 | 2017-08-01 | Atomera Incorporated | Semiconductor device including a superlattice and replacement metal gate structure and related methods |
KR102309092B1 (ko) | 2014-12-29 | 2021-10-06 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광 소자 및 이를 포함하는 발광 소자 어레이 |
CN107771355B (zh) | 2015-05-15 | 2022-01-14 | 阿托梅拉公司 | 具有超晶格和在不同深度处的穿通停止(pts)层的半导体装置和相关方法 |
US9721790B2 (en) | 2015-06-02 | 2017-08-01 | Atomera Incorporated | Method for making enhanced semiconductor structures in single wafer processing chamber with desired uniformity control |
US9558939B1 (en) | 2016-01-15 | 2017-01-31 | Atomera Incorporated | Methods for making a semiconductor device including atomic layer structures using N2O as an oxygen source |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08330678A (ja) * | 1995-03-27 | 1996-12-13 | Mitsubishi Cable Ind Ltd | 半導体レーザ |
JPH09138543A (ja) * | 1995-11-16 | 1997-05-27 | Ricoh Co Ltd | 帯電装置 |
JPH09186404A (ja) * | 1995-12-28 | 1997-07-15 | Fujitsu Ltd | GaN堆積ウエーハ及び光半導体装置 |
JPH09289190A (ja) * | 1996-04-19 | 1997-11-04 | Matsushita Electric Ind Co Ltd | メサ形成方法及び量子細線デバイス |
JPH104235A (ja) * | 1996-06-17 | 1998-01-06 | Nichia Chem Ind Ltd | 窒化物半導体レーザ素子及びその製造方法 |
JPH1093198A (ja) * | 1996-07-26 | 1998-04-10 | Toshiba Corp | 窒化ガリウム系化合物半導体レーザ及びその製造方法 |
JPH1174605A (ja) * | 1997-08-29 | 1999-03-16 | Toshiba Corp | 窒化物系化合物半導体レーザ |
JPH11191639A (ja) * | 1997-09-01 | 1999-07-13 | Nichia Chem Ind Ltd | 窒化物半導体素子 |
US5923690A (en) * | 1996-01-25 | 1999-07-13 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device |
JPH11233886A (ja) * | 1998-02-12 | 1999-08-27 | Ricoh Co Ltd | 半導体レーザ装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62193192A (ja) * | 1986-02-19 | 1987-08-25 | Sharp Corp | 半導体レ−ザ素子 |
US5559819A (en) * | 1994-04-19 | 1996-09-24 | Nippondenso Co., Ltd. | Semiconductor laser device |
JP3432910B2 (ja) * | 1994-09-28 | 2003-08-04 | ローム株式会社 | 半導体レーザ |
US5509024A (en) * | 1994-11-28 | 1996-04-16 | Xerox Corporation | Diode laser with tunnel barrier layer |
JPH08264905A (ja) * | 1995-01-27 | 1996-10-11 | Matsushita Electric Ind Co Ltd | 半導体レーザおよびその製造方法 |
JPH09139543A (ja) * | 1995-11-15 | 1997-05-27 | Hitachi Ltd | 半導体レーザ素子 |
JPH09270569A (ja) * | 1996-01-25 | 1997-10-14 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置 |
JPH104246A (ja) * | 1996-06-17 | 1998-01-06 | Furukawa Electric Co Ltd:The | 半導体発光素子及びその製造方法 |
SG74039A1 (en) * | 1998-01-21 | 2000-07-18 | Inst Materials Research & Eng | A buried hetero-structure inp-based opto-electronic device with native oxidized current blocking layer |
JP4352473B2 (ja) * | 1998-06-26 | 2009-10-28 | ソニー株式会社 | 半導体装置の製造方法 |
US6319742B1 (en) * | 1998-07-29 | 2001-11-20 | Sanyo Electric Co., Ltd. | Method of forming nitride based semiconductor layer |
-
1999
- 1999-09-29 US US09/408,458 patent/US6570898B2/en not_active Expired - Lifetime
-
2000
- 2000-09-22 JP JP2000287812A patent/JP2001111172A/ja active Pending
-
2001
- 2001-12-26 US US10/025,462 patent/US6875627B2/en not_active Expired - Lifetime
-
2012
- 2012-02-06 JP JP2012022808A patent/JP2012089895A/ja active Pending
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08330678A (ja) * | 1995-03-27 | 1996-12-13 | Mitsubishi Cable Ind Ltd | 半導体レーザ |
JPH09138543A (ja) * | 1995-11-16 | 1997-05-27 | Ricoh Co Ltd | 帯電装置 |
JPH09186404A (ja) * | 1995-12-28 | 1997-07-15 | Fujitsu Ltd | GaN堆積ウエーハ及び光半導体装置 |
US5923690A (en) * | 1996-01-25 | 1999-07-13 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device |
JPH09289190A (ja) * | 1996-04-19 | 1997-11-04 | Matsushita Electric Ind Co Ltd | メサ形成方法及び量子細線デバイス |
JPH104235A (ja) * | 1996-06-17 | 1998-01-06 | Nichia Chem Ind Ltd | 窒化物半導体レーザ素子及びその製造方法 |
JPH1093198A (ja) * | 1996-07-26 | 1998-04-10 | Toshiba Corp | 窒化ガリウム系化合物半導体レーザ及びその製造方法 |
JPH1174605A (ja) * | 1997-08-29 | 1999-03-16 | Toshiba Corp | 窒化物系化合物半導体レーザ |
JPH11191639A (ja) * | 1997-09-01 | 1999-07-13 | Nichia Chem Ind Ltd | 窒化物半導体素子 |
JPH11233886A (ja) * | 1998-02-12 | 1999-08-27 | Ricoh Co Ltd | 半導体レーザ装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2001111172A (ja) | 2001-04-20 |
US6570898B2 (en) | 2003-05-27 |
US20030053505A1 (en) | 2003-03-20 |
US6875627B2 (en) | 2005-04-05 |
US20020094003A1 (en) | 2002-07-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6570898B2 (en) | Structure and method for index-guided buried heterostructure AlGalnN laser diodes | |
JP2012089894A (ja) | 自己整合インデックスガイド型埋め込みヘテロ構造窒化物レーザ構造 | |
US6526083B1 (en) | Two section blue laser diode with reduced output power droop | |
US7769066B2 (en) | Laser diode and method for fabricating same | |
US7405421B2 (en) | Optical integrated device | |
US20030206567A1 (en) | Compound semiconductor laser | |
US6707071B2 (en) | Semiconductor light-emitting device | |
US9627849B2 (en) | Semiconductor light device and manufacturing method for the same | |
Caracci et al. | Long wavelength (λ∼ 1.5 μm) native‐oxide‐defined InAlAs‐InP‐InGaAsP quantum well heterostructure laser diodes | |
JPH11135879A (ja) | リッジウエーブガイド半導体レーザ | |
JP4028158B2 (ja) | 半導体光デバイス装置 | |
JPH11284280A (ja) | 半導体レーザ装置及びその製造方法ならびにiii−v族化合物半導体素子の製造方法 | |
JP3889910B2 (ja) | 半導体発光装置およびその製造方法 | |
US5770471A (en) | Method of making semiconductor laser with aluminum-free etch stopping layer | |
JP2002124738A (ja) | 半導体光デバイス装置及びその製造方法 | |
JP2001185809A (ja) | 半導体光デバイス装置及びその製造方法 | |
JP2001203423A (ja) | 半導体発光装置 | |
Wang et al. | Buried heterostructure InGaAsP/InP strain-compensated multiple quantum well laser with a native-oxidized InAlAs current blocking layer | |
JP2001135895A (ja) | 半導体発光装置 | |
JP2001358409A (ja) | 半導体光デバイス装置及びその製造方法 | |
JP2001057458A (ja) | 半導体発光装置 | |
JP2001185810A (ja) | 半導体光デバイス装置及びその製造方法 | |
Zhao et al. | Sub-milliampere single-quantum-well InGaAs-GaAs-AlGaAs addressable laser arrays | |
Swint et al. | 650-mW single lateral mode power from tapered and flared buried ridge laser | |
Engelmann et al. | A gain-guided-stripe diode laser with a single longitudinal mode, high kink power, and minimal beam distortion |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120306 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120306 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20120705 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20120705 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130626 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130709 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130919 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130925 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140107 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140715 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140916 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20150303 |