JP2012084912A5 - - Google Patents

Download PDF

Info

Publication number
JP2012084912A5
JP2012084912A5 JP2011278688A JP2011278688A JP2012084912A5 JP 2012084912 A5 JP2012084912 A5 JP 2012084912A5 JP 2011278688 A JP2011278688 A JP 2011278688A JP 2011278688 A JP2011278688 A JP 2011278688A JP 2012084912 A5 JP2012084912 A5 JP 2012084912A5
Authority
JP
Japan
Prior art keywords
porogen
composition
precursor
atomic
cyclooctane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011278688A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012084912A (ja
Filing date
Publication date
Priority claimed from US12/115,087 external-priority patent/US20080268177A1/en
Application filed filed Critical
Publication of JP2012084912A publication Critical patent/JP2012084912A/ja
Publication of JP2012084912A5 publication Critical patent/JP2012084912A5/ja
Pending legal-status Critical Current

Links

JP2011278688A 2008-05-05 2011-12-20 ポロゲン、ポロゲン化前駆体、及び低誘電定数を有する多孔性有機シリカガラスフィルムを得るためにそれらを用いる方法 Pending JP2012084912A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/115,087 US20080268177A1 (en) 2002-05-17 2008-05-05 Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films with Low Dielectric Constants
US12/115,087 2008-05-05

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2009112216A Division JP5270442B2 (ja) 2008-05-05 2009-05-01 ポロゲン、ポロゲン化前駆体、および低誘電定数を有する多孔性有機シリカガラスフィルムを得るためにそれらを用いる方法

Publications (2)

Publication Number Publication Date
JP2012084912A JP2012084912A (ja) 2012-04-26
JP2012084912A5 true JP2012084912A5 (cg-RX-API-DMAC7.html) 2012-06-14

Family

ID=40996827

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2009112216A Active JP5270442B2 (ja) 2008-05-05 2009-05-01 ポロゲン、ポロゲン化前駆体、および低誘電定数を有する多孔性有機シリカガラスフィルムを得るためにそれらを用いる方法
JP2011278688A Pending JP2012084912A (ja) 2008-05-05 2011-12-20 ポロゲン、ポロゲン化前駆体、及び低誘電定数を有する多孔性有機シリカガラスフィルムを得るためにそれらを用いる方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2009112216A Active JP5270442B2 (ja) 2008-05-05 2009-05-01 ポロゲン、ポロゲン化前駆体、および低誘電定数を有する多孔性有機シリカガラスフィルムを得るためにそれらを用いる方法

Country Status (6)

Country Link
US (1) US20080268177A1 (cg-RX-API-DMAC7.html)
EP (1) EP2116632A3 (cg-RX-API-DMAC7.html)
JP (2) JP5270442B2 (cg-RX-API-DMAC7.html)
KR (5) KR20090115915A (cg-RX-API-DMAC7.html)
CN (2) CN101575700A (cg-RX-API-DMAC7.html)
TW (1) TWI397606B (cg-RX-API-DMAC7.html)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8703625B2 (en) 2010-02-04 2014-04-22 Air Products And Chemicals, Inc. Methods to prepare silicon-containing films
EP2363512A1 (en) * 2010-02-04 2011-09-07 Air Products And Chemicals, Inc. Methods to prepare silicon-containing films
KR101108647B1 (ko) * 2010-02-09 2012-01-31 서강대학교산학협력단 고온 오존처리를 포함하는 나노기공 초저유전 박막의 제조 방법 및 이에 의해 제조된 나노기공 초저유전 박막
TWI550121B (zh) * 2010-02-17 2016-09-21 液態空氣喬治斯克勞帝方法研究開發股份有限公司 SiCOH低K膜之氣相沈積法
CN102770580A (zh) * 2010-02-25 2012-11-07 应用材料公司 藉由等离子体增强化学气相沉积使用含有具有机官能基的硅的杂化前驱物所形成的超低介电材料
CN101789418B (zh) * 2010-03-11 2011-12-28 复旦大学 一种多孔超低介电常数材料薄膜及其制备方法
US8460753B2 (en) * 2010-12-09 2013-06-11 Air Products And Chemicals, Inc. Methods for depositing silicon dioxide or silicon oxide films using aminovinylsilanes
US8441006B2 (en) * 2010-12-23 2013-05-14 Intel Corporation Cyclic carbosilane dielectric films
US8772154B2 (en) * 2011-06-17 2014-07-08 GlobalFoundries, Inc. Integrated circuits including barrier polish stop layers and methods for the manufacture thereof
US9054110B2 (en) 2011-08-05 2015-06-09 Taiwan Semiconductor Manufacturing Company, Ltd. Low-K dielectric layer and porogen
DE102013215400A1 (de) * 2013-08-06 2015-02-12 Robert Bosch Gmbh Silicat-Aerogel und Verfahren zu seiner Herstellung
CN104008997A (zh) * 2014-06-04 2014-08-27 复旦大学 一种超低介电常数绝缘薄膜及其制备方法
US9922818B2 (en) * 2014-06-16 2018-03-20 Versum Materials Us, Llc Alkyl-alkoxysilacyclic compounds
CN107406978B (zh) * 2015-02-06 2019-12-03 弗萨姆材料美国有限责任公司 用于碳掺杂含硅膜的组合物以及使用所述组合物的方法
WO2016144960A1 (en) * 2015-03-09 2016-09-15 Air Products And Chemicals, Inc. Process for depositing porous organosilicate glass films for use as resistive random access memory
US20170125241A1 (en) * 2015-10-30 2017-05-04 Applied Materials, Inc. Low temp single precursor arc hard mask for multilayer patterning application
US10249489B2 (en) * 2016-11-02 2019-04-02 Versum Materials Us, Llc Use of silyl bridged alkyl compounds for dense OSG films
US11749563B2 (en) 2018-06-27 2023-09-05 Taiwan Semiconductor Manufacturing Co., Ltd. Interlayer dielectric layer
CN110952074B (zh) * 2018-08-10 2023-06-13 弗萨姆材料美国有限责任公司 硅化合物和使用硅化合物沉积膜的方法
KR102409869B1 (ko) 2018-08-10 2022-06-16 버슘머트리얼즈 유에스, 엘엘씨 규소 화합물 및 이를 사용하여 막을 증착시키는 방법
SG11202105522QA (en) * 2018-11-27 2021-06-29 Versum Materials Us Llc 1-methyl-1-iso-propoxy-silacycloalkanes and dense organosilica films made therefrom
CN114207043B (zh) * 2019-08-09 2023-09-15 默克专利有限公司 低介电常数硅质膜制造用组合物和使用其来制造固化膜和电子器件的方法
WO2021050798A1 (en) * 2019-09-13 2021-03-18 Versum Materials Us, Llc Monoalkoxysilanes and dialkoxysilanes and dense organosilica films made therefrom
KR20220061162A (ko) * 2019-09-13 2022-05-12 버슘머트리얼즈 유에스, 엘엘씨 모노알콕시실란 및 이로부터 제조된 고밀도 오가노실리카 필름
KR20220160071A (ko) * 2020-03-31 2022-12-05 버슘머트리얼즈 유에스, 엘엘씨 고 탄성 계수를 갖는 막들을 증착하기 위한 신규한 전구체들
US11572622B2 (en) * 2020-09-14 2023-02-07 Applied Materials, Inc. Systems and methods for cleaning low-k deposition chambers
CN114429990A (zh) * 2020-10-29 2022-05-03 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2536013A1 (de) * 1975-08-13 1977-03-03 Bosch Gmbh Robert Verfahren zur verbesserung der haltbarkeit von aus siliciumoxiden bestehenden schutzschichten
US5296624A (en) * 1992-11-25 1994-03-22 Huls America, Inc. Preparation of sterically-hindered organosilanes
MY113904A (en) 1995-05-08 2002-06-29 Electron Vision Corp Method for curing spin-on-glass film utilizing electron beam radiation
JP3173426B2 (ja) * 1997-06-09 2001-06-04 日本電気株式会社 シリカ絶縁膜の製造方法及び半導体装置の製造方法
US6068884A (en) * 1998-04-28 2000-05-30 Silcon Valley Group Thermal Systems, Llc Method of making low κ dielectric inorganic/organic hybrid films
US6054206A (en) * 1998-06-22 2000-04-25 Novellus Systems, Inc. Chemical vapor deposition of low density silicon dioxide films
US6171945B1 (en) * 1998-10-22 2001-01-09 Applied Materials, Inc. CVD nanoporous silica low dielectric constant films
JP3888794B2 (ja) * 1999-01-27 2007-03-07 松下電器産業株式会社 多孔質膜の形成方法、配線構造体及びその形成方法
JP3084367B1 (ja) 1999-03-17 2000-09-04 キヤノン販売株式会社 層間絶縁膜の形成方法及び半導体装置
US6207555B1 (en) 1999-03-17 2001-03-27 Electron Vision Corporation Electron beam process during dual damascene processing
US6312793B1 (en) * 1999-05-26 2001-11-06 International Business Machines Corporation Multiphase low dielectric constant material
US6204201B1 (en) 1999-06-11 2001-03-20 Electron Vision Corporation Method of processing films prior to chemical vapor deposition using electron beam processing
US6541367B1 (en) * 2000-01-18 2003-04-01 Applied Materials, Inc. Very low dielectric constant plasma-enhanced CVD films
WO2002043119A2 (en) * 2000-10-25 2002-05-30 International Business Machines Corporation An ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device, a method for fabricating the same, and an electronic device containing the same
US6768200B2 (en) * 2000-10-25 2004-07-27 International Business Machines Corporation Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device
US6790789B2 (en) * 2000-10-25 2004-09-14 International Business Machines Corporation Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made
US6583048B2 (en) * 2001-01-17 2003-06-24 Air Products And Chemicals, Inc. Organosilicon precursors for interlayer dielectric films with low dielectric constants
KR100432152B1 (ko) * 2001-04-12 2004-05-17 한국화학연구원 다분지형 폴리알킬렌 옥시드 포로젠과 이를 이용한저유전성 절연막
US6716770B2 (en) * 2001-05-23 2004-04-06 Air Products And Chemicals, Inc. Low dielectric constant material and method of processing by CVD
JP3418383B2 (ja) * 2001-05-31 2003-06-23 沖電気工業株式会社 半導体装置の製造方法
US7456488B2 (en) * 2002-11-21 2008-11-25 Advanced Technology Materials, Inc. Porogen material
US7384471B2 (en) * 2002-04-17 2008-06-10 Air Products And Chemicals, Inc. Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
US8293001B2 (en) * 2002-04-17 2012-10-23 Air Products And Chemicals, Inc. Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
ATE499458T1 (de) * 2002-04-17 2011-03-15 Air Prod & Chem Verfahren zur herstellung einer porösen sioch- schicht
US6846515B2 (en) * 2002-04-17 2005-01-25 Air Products And Chemicals, Inc. Methods for using porogens and/or porogenated precursors to provide porous organosilica glass films with low dielectric constants
US7056560B2 (en) * 2002-05-08 2006-06-06 Applies Materials Inc. Ultra low dielectric materials based on hybrid system of linear silicon precursor and organic porogen by plasma-enhanced chemical vapor deposition (PECVD)
JP4139952B2 (ja) * 2002-07-31 2008-08-27 日本電気株式会社 共重合高分子膜及びその形成方法、並びに共重合高分子膜を用いた半導体装置
US7098149B2 (en) * 2003-03-04 2006-08-29 Air Products And Chemicals, Inc. Mechanical enhancement of dense and porous organosilicate materials by UV exposure
US20040197474A1 (en) * 2003-04-01 2004-10-07 Vrtis Raymond Nicholas Method for enhancing deposition rate of chemical vapor deposition films
US8137764B2 (en) * 2003-05-29 2012-03-20 Air Products And Chemicals, Inc. Mechanical enhancer additives for low dielectric films
US20050048795A1 (en) * 2003-08-27 2005-03-03 Chung-Chi Ko Method for ultra low-K dielectric deposition
CN1229400C (zh) * 2003-09-18 2005-11-30 中国石油化工股份有限公司 用于烯烃聚合的催化剂组分及其催化剂
US7018941B2 (en) * 2004-04-21 2006-03-28 Applied Materials, Inc. Post treatment of low k dielectric films
US7049247B2 (en) * 2004-05-03 2006-05-23 International Business Machines Corporation Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made
US7332445B2 (en) * 2004-09-28 2008-02-19 Air Products And Chemicals, Inc. Porous low dielectric constant compositions and methods for making and using same
JP2009507834A (ja) * 2005-09-12 2009-02-26 フジフィルム・エレクトロニック・マテリアルズ・ユーエスエイ・インコーポレイテッド 環状アルケン誘導体の分解を防止する添加剤
US20070299239A1 (en) * 2006-06-27 2007-12-27 Air Products And Chemicals, Inc. Curing Dielectric Films Under A Reducing Atmosphere

Similar Documents

Publication Publication Date Title
JP2012084912A5 (cg-RX-API-DMAC7.html)
JP6466897B2 (ja) 炭素ドープケイ素含有膜を堆積するための組成物及び方法
JP5886818B2 (ja) アルコキシシリルアミン化合物及びその応用
TWI803909B (zh) 摻雜碳的矽氧化物的沉積
JP6864086B2 (ja) 酸化ケイ素膜の堆積のための組成物及び方法
CN103224510B (zh) 烷氧基氨基硅烷化合物及其应用
JP6317377B2 (ja) ビスアミノアルコキシシラン化合物及びケイ素含有膜を堆積するためのその使用法
JP6882468B2 (ja) 表面フィーチャを充填する低k膜を作るための前駆体および流動性CVD法
TWI680982B (zh) 作為高成長速率含矽膜的前驅物的官能化環矽氮烷
KR102279764B1 (ko) 2,2,4,4-테트라실릴펜타실란 및 이의 조성물, 방법 및 용도
JP2004274052A5 (cg-RX-API-DMAC7.html)
JP2015188087A (ja) 酸化ケイ素膜の堆積のための組成物および方法
JPWO2007072750A1 (ja) 低誘電率非晶質シリカ系被膜形成用塗布液および該塗布液から得られる低誘電率非晶質シリカ系被膜
CN101939465A (zh) 化学气相沉积法用材料和含硅绝缘膜及其制造方法
JP2022504248A (ja) 高品質酸化ケイ素薄膜の高温原子層堆積のための組成物
KR20200035493A (ko) 알콕시실라사이클릭 또는 아실옥시실라사이클릭 화합물 및 이를 사용하여 막을 증착시키기 위한 방법
JP2010504648A5 (cg-RX-API-DMAC7.html)
CN103422069B (zh) 具有优良集成性能的低k前体
TWI787373B (zh) 具有酮亞胺(ketimine)結構的有機矽化合物之製造方法
KR101511191B1 (ko) 반도체 공정에서 알콕시실란 가수분해 반응을 위한 촉매 및 그러한 촉매를 포함한 포뮬레이션
KR20250011919A (ko) 탄소 도핑된 규소 함유 막을 위한 조성물 및 이를 사용하는 방법
TWI884773B (zh) 氯甲矽烷基取代的矽環烷烴及其用於形成包含矽和氧的膜的用途
US20250201549A1 (en) Precursor for forming silicon-containing thin film with high hardness and low dielectric constant and manufacturing method for silicon-containing thin film using thereof
TWI747023B (zh) 矽化合物及使用其沉積膜的方法
JP6993394B2 (ja) ケイ素化合物及びケイ素化合物を使用してフィルムを堆積する方法