JP2012079818A - 基板貼り合せ装置、加熱装置、積層半導体装置の製造方法及び積層半導体装置 - Google Patents

基板貼り合せ装置、加熱装置、積層半導体装置の製造方法及び積層半導体装置 Download PDF

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JP2012079818A
JP2012079818A JP2010221763A JP2010221763A JP2012079818A JP 2012079818 A JP2012079818 A JP 2012079818A JP 2010221763 A JP2010221763 A JP 2010221763A JP 2010221763 A JP2010221763 A JP 2010221763A JP 2012079818 A JP2012079818 A JP 2012079818A
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substrate
induction
stage
substrates
heating unit
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JP2012079818A5 (https=
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Keiichi Tanaka
慶一 田中
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Nikon Corp
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Nikon Corp
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JP2010221763A 2010-09-30 2010-09-30 基板貼り合せ装置、加熱装置、積層半導体装置の製造方法及び積層半導体装置 Pending JP2012079818A (ja)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12002700B2 (en) 2020-09-08 2024-06-04 Kioxia Corporation Substrate bonding apparatus and method of manufacturing a semiconductor device

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61201420A (ja) * 1985-03-04 1986-09-06 Mitsubishi Electric Corp 分子線エピタキシ−装置
JPH08330282A (ja) * 1995-05-30 1996-12-13 Anelva Corp プラズマ処理装置
JP2000267589A (ja) * 1999-03-18 2000-09-29 Seiko Epson Corp 電気光学装置の製造装置および製造方法
JP2002144026A (ja) * 2000-11-06 2002-05-21 Fuji Electric Co Ltd ろう付け装置
JP2004342450A (ja) * 2003-05-15 2004-12-02 Kokusai Electric Semiconductor Service Inc 高周波誘導加熱装置及び半導体製造装置
US20070108195A1 (en) * 2004-11-15 2007-05-17 Yonglai Tian Method and apparatus for rapid thermal processing and bonding of materials using RF and microwaves
US20080153258A1 (en) * 2006-12-12 2008-06-26 Erich Thallner Process and device for bonding wafers
JP2008159759A (ja) * 2006-12-22 2008-07-10 Mitsui Eng & Shipbuild Co Ltd 誘導加熱を用いた熱処理方法および熱処理装置
WO2009057710A1 (ja) * 2007-10-30 2009-05-07 Nikon Corporation 基板保持部材、基板接合装置、積層基板製造装置、基板接合方法、積層基板製造方法および積層型半導体装置製造方法
JP2009208084A (ja) * 2008-02-29 2009-09-17 Mitsubishi Heavy Ind Ltd 常温接合装置
US20100059182A1 (en) * 2008-09-05 2010-03-11 Jusung Engineering Co., Ltd. Substrate processing apparatus
US20100170936A1 (en) * 2009-01-07 2010-07-08 Advanced Optoelectronic Technology Inc. Method for bonding two materials

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61201420A (ja) * 1985-03-04 1986-09-06 Mitsubishi Electric Corp 分子線エピタキシ−装置
JPH08330282A (ja) * 1995-05-30 1996-12-13 Anelva Corp プラズマ処理装置
JP2000267589A (ja) * 1999-03-18 2000-09-29 Seiko Epson Corp 電気光学装置の製造装置および製造方法
JP2002144026A (ja) * 2000-11-06 2002-05-21 Fuji Electric Co Ltd ろう付け装置
JP2004342450A (ja) * 2003-05-15 2004-12-02 Kokusai Electric Semiconductor Service Inc 高周波誘導加熱装置及び半導体製造装置
US20070108195A1 (en) * 2004-11-15 2007-05-17 Yonglai Tian Method and apparatus for rapid thermal processing and bonding of materials using RF and microwaves
US20080153258A1 (en) * 2006-12-12 2008-06-26 Erich Thallner Process and device for bonding wafers
JP2008159759A (ja) * 2006-12-22 2008-07-10 Mitsui Eng & Shipbuild Co Ltd 誘導加熱を用いた熱処理方法および熱処理装置
WO2009057710A1 (ja) * 2007-10-30 2009-05-07 Nikon Corporation 基板保持部材、基板接合装置、積層基板製造装置、基板接合方法、積層基板製造方法および積層型半導体装置製造方法
JP2009208084A (ja) * 2008-02-29 2009-09-17 Mitsubishi Heavy Ind Ltd 常温接合装置
US20100059182A1 (en) * 2008-09-05 2010-03-11 Jusung Engineering Co., Ltd. Substrate processing apparatus
US20100170936A1 (en) * 2009-01-07 2010-07-08 Advanced Optoelectronic Technology Inc. Method for bonding two materials

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12002700B2 (en) 2020-09-08 2024-06-04 Kioxia Corporation Substrate bonding apparatus and method of manufacturing a semiconductor device

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