JP2012033905A - 半導体装置、及び半導体装置の作製方法 - Google Patents
半導体装置、及び半導体装置の作製方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 163
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
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- 239000010703 silicon Substances 0.000 claims abstract description 172
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- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 3
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/45—Ohmic electrodes
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- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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Abstract
【解決手段】半導体層と電気的に接続する金属、又は金属化合物からなる下部電極を設け、この下部電極の一部が露出するように層間絶縁層に形成されたコンタクトホール内に、接続電極となる導電性シリコンウィスカーを形成する。その後、導電性シリコンウィスカーと電気的に接続する上部電極を形成すればよい。またこのように作製したコンタクトを用いて半導体装置を作製すればよい。
【選択図】図1
Description
本実施の形態では、本発明の一態様であるトランジスタの構成とその作製方法について図1乃至図3を用いて説明する。
図1に、本実施の形態で例示するトランジスタ101の断面概略図を示す。
次に、本発明の一態様であるトランジスタの作製方法の一例について説明する。以下ではトランジスタ101の作製方法について図2、及び図3を用いて説明する。
本実施の形態では、本発明の一態様の、実施の形態1で示したものとは異なるトランジスタの構成とその作製方法について図4及び図5を用いて説明する。
図4(A)に、本実施の形態で例示するトランジスタ201の断面概略図を示す。トランジスタ201は、酸化物半導体を半導体層とする、トップゲート構造のトランジスタのひとつである。
次に、本発明の一態様であるトランジスタの作製方法の一例について説明する。以下では、トランジスタ201の作製方法について図5を用いて説明する。
101 トランジスタ
103 ゲート絶縁層
105 ゲート電極層
107 サイドウォール
109a ソース領域
109b ドレイン領域
111 金属化合物層
113 層間絶縁層
115 シリコンウィスカー
117 コンタクトホール
119a ソース配線層
119b ドレイン配線層
121 素子分離層
123 金属層
200 基板
201 トランジスタ
202 半導体層
203 ゲート絶縁層
205 ゲート電極層
211a ソース電極層
211b ドレイン電極層
213 層間絶縁層
215 シリコンウィスカー
217 コンタクトホール
219a ソース配線層
219b ドレイン配線層
221 下地層
241 トランジスタ
Claims (6)
- 半導体層と、
前記半導体層の上面と電気的に接続する下部電極と、
前記下部電極上にコンタクトホールを備え、且つ前記半導体層を覆う絶縁層と、
導電性シリコンウィスカーを含み、且つ前記コンタクトホールにおいて前記下部電極と接する接続電極と、
前記絶縁層上に、前記接続電極と電気的に接続する上部電極と、を有する半導体装置。 - 前記下部電極は、金属、または前記半導体層を構成する半導体と金属とを含む金属化合物を有する、請求項1に記載の半導体装置。
- 前記導電性シリコンウィスカーと前記上部電極との間にシリサイド層を有する、請求項1及び2のいずれか一に記載の半導体装置。
- 前記接続電極は、二以上の導電性シリコンウィスカーを含む、請求項1乃至3のいずれか一に記載の半導体装置。
- 半導体層の上面と電気的に接続する下部電極を形成し、
前記半導体層と前記下部電極とを覆う絶縁層を形成し、
前記絶縁層に、前記下部電極と重なるコンタクトホールを形成し、
前記コンタクトホールにおいて、前記下部電極と接し、且つ導電性シリコンウィスカーを含む接続電極を形成し、
前記絶縁層上に、前記接続電極と電気的に接続する上部電極を形成する、半導体装置の作製方法。 - 半導体層の上面と接する金属膜を形成し、
前記半導体層を構成する材料と前記金属膜を構成する材料とを含み、且つ前記半導体層の上面に接する金属化合物層を形成し、
前記金属膜を除去し、
前記半導体層と前記金属化合物層とを覆う絶縁層を形成し、
前記絶縁層に、前記金属化合物層と重なるコンタクトホールを形成し、
前記コンタクトホールにおいて、前記金属化合物層と接し、且つ導電性シリコンウィスカーを含む接続電極を形成し、
前記絶縁層上に、前記接続電極と電気的に接続する上部電極を形成する、半導体装置の作製方法。
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