JP2012033557A - 半導体装置製造用フィルム、半導体装置製造用フィルムの製造方法、及び、半導体装置の製造方法。 - Google Patents
半導体装置製造用フィルム、半導体装置製造用フィルムの製造方法、及び、半導体装置の製造方法。 Download PDFInfo
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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Abstract
【解決手段】 ダイシングテープ上に接着剤層が積層された接着剤層付きダイシングテープが、接着剤層を貼り合わせ面にして、所定の間隔をおいてセパレータに積層された半導体装置製造用フィルムであって、セパレータは、ダイシングテープの外周に沿った切れ込みがあり、切れ込みの深さがセパレータの厚さの2/3以下である半導体装置製造用フィルム。
【選択図】 図1
Description
図1(a)、図1(b)に示すように、半導体装置製造用フィルム40は、長尺のセパレータ42上に平面視円形状の接着剤層付きダイシングテープ1が所定の間隔をおいて積層された構成を有する。
接着剤層付きダイシングテープ1は、基材31上に粘着剤層32が設けられたダイシングテープ3と、粘着剤層32上に設けられた接着剤層2を備える構成である。なお、接着剤層2の径は、ダイシングテープ3の径と同一であるか、図1(b)に示すように、ダイシングテープ3よりも小さい方が好ましい。接着剤層付きダイシングテープ1は、接着剤層2を貼り合わせ面にして、セパレータ42に積層されている。セパレータ42には、深さがセパレータ42の厚さの2/3以下の切れ込み44がダイシングテープ3の外周に沿って、ダイシングテープ3側から形成されている。切れ込み44の前記深さは、1/6以上2/3以下であることが好ましく、1/3以上2/3以下であることがより好ましい。セパレータ42は、ダイシングテープ3の外周に沿った切れ込み44が形成されているため、切れ込み44を起点として、接着剤層付きダイシングテープ1をセパレータ42から容易に剥離することが可能となる。また、切れ込み44の深さがセパレータ42の厚さの2/3以下であるため、接着剤層付きダイシングテープ1をセパレータ42から剥離しようとした際に、切り込み部分からセパレータ42が裂けてしまうことを防止することができる。その結果、接着剤層付きダイシングテープ1をセパレータ42から好適に剥離する(ベロ出しする)ことができる。
セパレータ42としては、例えば、紙などの紙系基材;布、不織布、フェルト、ネットなどの繊維系基材;金属箔、金属板などの金属系基材;プラスチックのフィルムやシートなどのプラスチック系基材;ゴムシートなどのゴム系基材;発泡シートなどの発泡体や、これらの積層体[特に、プラスチック系基材と他の基材との積層体や、プラスチックフィルム(又はシート)同士の積層体など]等の適宜な薄葉体を用いることができる。本発明では、基材としては、プラスチックのフィルムやシートなどのプラスチック系基材を好適に用いることができる。このようなプラスチック材における素材としては、例えば、ポリエチレン(PE)、ポリプロピレン(PP)、エチレン−プロピレン共重合体等のオレフィン系樹脂;エチレン−酢酸ビニル共重合体(EVA)、アイオノマー樹脂、エチレン−(メタ)アクリル酸共重合体、エチレン−(メタ)アクリル酸エステル(ランダム、交互)共重合体等のエチレンをモノマー成分とする共重合体;ポリエチレンテレフタレート(PET)、ポリエチレンナフタレート(PEN)、ポリブチレンテレフタレート(PBT)等のポリエステル;アクリル系樹脂;ポリ塩化ビニル(PVC);ポリウレタン;ポリカーボネート;ポリフェニレンスルフィド(PPS);ポリアミド(ナイロン)、全芳香族ポリアミド(アラミド)等のアミド系樹脂;ポリエーテルエーテルケトン(PEEK);ポリイミド;ポリエーテルイミド;ポリ塩化ビニリデン;ABS(アクリロニトリル−ブタジエン−スチレン共重合体);セルロース系樹脂;シリコーン樹脂;フッ素樹脂などが挙げられる。セパレータ42は単層であってもよく2種以上の複層でもよい。なお、セパレータ42の製造方法としては、従来公知の方法により形成することができる。
接着剤層2はフィルム状の形態を有している。接着剤層2は、通常、製品としての接着剤層付きダイシングテープ1又は半導体装置製造用フィルム40の形態では、未硬化状態(半硬化状態を含む)であり、接着剤層付きダイシングテープ1を半導体ウエハに貼着させた後に熱硬化される。
<ゲル分率の測定方法>
接着剤層から約0.1gをサンプリングして精秤し(試料の重量)、該サンプルをメッシュ状シートで包んだ後、約50mlのトルエン中に室温で1週間浸漬させる。その後、溶剤不溶分(メッシュ状シートの内容物)をトルエンから取り出し、130℃で約2時間乾燥させ、乾燥後の溶剤不溶分を秤量し(浸漬・乾燥後の重量)、下記式(a)よりゲル分率(重量%)を算出する。
ゲル分率(重量%)=[(浸漬・乾燥後の重量)/(試料の重量)]×100 (a)
前記ダイシングテープ3は、基材31上に粘着剤層32が形成されて構成されている。このように、ダイシングテープ3は、基材31と、粘着剤層32とが積層された構成を有していればよい。基材(支持基材)は粘着剤層等の支持母体として用いることができる。前記基材31は放射線透過性を有していることが好ましい。前記基材31としては、例えば、紙などの紙系基材;布、不織布、フェルト、ネットなどの繊維系基材;金属箔、金属板などの金属系基材;プラスチックのフィルムやシートなどのプラスチック系基材;ゴムシートなどのゴム系基材;発泡シートなどの発泡体や、これらの積層体[特に、プラスチック系基材と他の基材との積層体や、プラスチックフィルム(又はシート)同士の積層体など]等の適宜な薄葉体を用いることができる。本発明では、基材としては、プラスチックのフィルムやシートなどのプラスチック系基材を好適に用いることができる。このようなプラスチック材における素材としては、例えば、ポリエチレン(PE)、ポリプロピレン(PP)、エチレン−プロピレン共重合体等のオレフィン系樹脂;エチレン−酢酸ビニル共重合体(EVA)、アイオノマー樹脂、エチレン−(メタ)アクリル酸共重合体、エチレン−(メタ)アクリル酸エステル(ランダム、交互)共重合体等のエチレンをモノマー成分とする共重合体;ポリエチレンテレフタレート(PET)、ポリエチレンナフタレート(PEN)、ポリブチレンテレフタレート(PBT)等のポリエステル;アクリル系樹脂;ポリ塩化ビニル(PVC);ポリウレタン;ポリカーボネート;ポリフェニレンスルフィド(PPS);ポリアミド(ナイロン)、全芳香族ポリアミド(アラミド)等のアミド系樹脂;ポリエーテルエーテルケトン(PEEK);ポリイミド;ポリエーテルイミド;ポリ塩化ビニリデン;ABS(アクリロニトリル−ブタジエン−スチレン共重合体);セルロース系樹脂;シリコーン樹脂;フッ素樹脂などが挙げられる。
本実施形態に係る半導体装置製造用フィルムの製造方法について、図1に示す半導体装置製造用フィルム40を例にして説明する。本実施形態に係る半導体装置製造用フィルム40の製造方法は、ダイシングテープ3上に接着剤層2が積層された接着剤層付きダイシングテープ1が、接着剤層2を貼り合わせ面にしてセパレータ42に積層されたセパレータ付フィルムを準備する工程と、貼り着ける対象の半導体ウエハに対応する大きさに、前記セパレータ付フィルムを切断する工程とを具備する。前記切断は、ダイシングテープ3側からセパレータ42の厚さの2/3以下の深さまで行う。
半導体ウエハとしては、公知乃至慣用の半導体ウエハであれば特に制限されず、各種素材の半導体ウエハから適宜選択して用いることができる。本発明では、半導体ウエハとしては、シリコンウエハを好適に用いることができる。
本実施の形態に係る半導体装置の製造方法について、図2を参照しながら以下に説明する。図2は、本実施形態に係る接着剤層付きダイシングテープを用いた半導体装置の製造方法の一例を示す断面模式図である
次に、図2(a)で示されるように、接着剤層付きダイシングテープ1の接着剤層2上に半導体ウエハ4を貼着して、これを接着保持させ固定する(マウント工程)。このとき前記接着剤層2は未硬化状態(半硬化状態を含む)にある。また、接着剤層付きダイシングテープ1は、半導体ウエハ4の裏面に貼着される。半導体ウエハ4の裏面とは、回路面とは反対側の面(非回路面、非電極形成面などとも称される)を意味する。貼着方法は特に限定されないが、圧着による方法が好ましい。圧着は、通常、圧着ロール等の押圧手段により押圧しながら行われる。
次に、図2(b)で示されるように、半導体ウエハ4のダイシングを行う。これにより、半導体ウエハ4を所定のサイズに切断して個片化(小片化)し、半導体チップ5を製造する。ダイシングは、例えば、半導体ウエハ4の回路面側から常法に従い行われる。また、本工程では、例えば、接着剤層付きダイシングテープ1まで切込みを行うフルカットと呼ばれる切断方式等を採用できる。本工程で用いるダイシング装置としては特に限定されず、従来公知のものを用いることができる。また、半導体ウエハ4は、接着剤層2を有する接着剤層付きダイシングテープ1により優れた密着性で接着固定されているので、チップ欠けやチップ飛びを抑制できると共に、半導体ウエハ4の破損も抑制できる。なお、接着剤層2がエポキシ樹脂を含む樹脂組成物により形成されていると、ダイシングにより切断されても、その切断面において接着剤層の接着剤層の糊はみ出しが生じるのを抑制又は防止することができる。その結果、切断面同士が再付着(ブロッキング)することを抑制又は防止することができ、後述のピックアップを一層良好に行うことができる。
接着剤層付きダイシングテープ1に接着固定された半導体チップ5を回収する為に、図2(c)で示されるように、半導体チップ5のピックアップを行って、半導体チップ5を接着剤層2とともにダイシングテープ3より剥離させる。ピックアップの方法としては特に限定されず、従来公知の種々の方法を採用できる。例えば、個々の半導体チップ5を接着剤層付きダイシングテープ1の基材31側からニードルによって突き上げ、突き上げられた半導体チップ5をピックアップ装置によってピックアップする方法等が挙げられる。なお、ピックアップされた半導体チップ5は、その裏面が接着剤層2により保護されている。
ピックアップした半導体チップ5は、図2(d)で示されるように、基板等の被着体に、フリップチップボンディング方式(フリップチップ実装方式)により固定させる。具体的には、半導体チップ5を、半導体チップ5の回路面(表面、回路パターン形成面、電極形成面などとも称される)が被着体6と対向する形態で、被着体6に常法に従い固定させる。例えば、半導体チップ5の回路面側に形成されているバンプ51を、被着体6の接続パッドに被着された接合用の導電材(半田など)61に接触させて押圧しながら導電材を溶融させることにより、半導体チップ5と被着体6との電気的導通を確保し、半導体チップ5を被着体6に固定させることができる(フリップチップボンディング工程)。このとき、半導体チップ5と被着体6との間には空隙が形成されており、その空隙間距離は、一般的に30μm〜300μm程度である。尚、半導体チップ5を被着体6上にフリップチップボンディング(フリップチップ接続)した後は、半導体チップ5と被着体6との対向面や間隙を洗浄し、該間隙に封止材(封止樹脂など)を充填させて封止することが重要である。
<接着剤層の作製>
アクリル酸エチル−メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(商品名「パラクロンW−197CM」根上工業株式会社製):100部に対して、エポキシ樹脂(商品名「エピコート1004」JER株式会社製):113部、フェノール樹脂(商品名「ミレックスXLC−4L」三井化学株式会社製):121部、球状シリカ(商品名「SO−25R」株式会社アドマテックス製):246部、染料1(商品名「OIL GREEN 502」オリエント化学工業株式会社製):5部、染料2(商品名「OIL BLACK BS」オリエント化学工業株式会社製):5部をメチルエチルケトンに溶解して、固形分濃度が23.6重量%となる接着剤組成物の溶液を調製した。
1.セパレータ付フィルムの作製
上記フィルムAを、ダイシングテープ(商品名「V−8−T」日東電工株式会社製;基材の平均厚さ:65μm、粘着剤層の平均厚さ:10μm)の粘着剤層上に、ハンドローラーを用いて貼り合せ、接着剤層付きダイシングテープがセパレータに積層されたセパレータ付フィルムAを作製した。
上記セパレータ付フィルムAを円状のトムソン刃を用いてプリカット加工を行い、半導体装置製造用フィルムを得た。尚プリカット加工深さはトムソン刃内外部にスペーサーを導入することで調節した。具体的には、セパレータへの切り込み深さが13μmとなるようにスペーサーを導入した。
プリカット加工におけるセパレータへの切り込み深さを20μmとなるようにスペーサーを導入した以外は、実施例1と同様にして実施例2に係る半導体装置製造用フィルムを得た。
プリカット加工におけるセパレータへの切り込み深さを27μmとなるようにスペーサーを導入した以外は、実施例1と同様にして比較例1に係る半導体装置製造用フィルムを得た。
実施例1、実施例2、及び、比較例1の半導体装置製造用フィルムについて以下に示すセパレータ剥離評価を行った。
研削装置:商品名「DFG−8560」ディスコ社製
半導体ウェハ:8インチ径(厚さ0.6mmから0.2mmに裏面研削)
(貼り合わせ条件)
貼り付け装置:商品名「MA−3000III」日東精機株式会社製
貼り付け速度計:10mm/min
貼り付け圧力:0.15MPa
貼り付け時のステージ温度:70℃
2 接着剤層
3 ダイシングテープ
31 基材
32 粘着剤層
40 半導体装置製造用フィルム
42 セパレータ
44 切れ込み
33 半導体ウエハの貼着部分に対応する部分
4 半導体ウエハ
5 半導体チップ
51 半導体チップ5の回路面側に形成されているバンプ
6 被着体
61 被着体6の接続パッドに被着された接合用の導電材
Claims (6)
- ダイシングテープ上に接着剤層が積層された接着剤層付きダイシングテープが、前記接着剤層を貼り合わせ面にして、所定の間隔をおいてセパレータに積層された半導体装置製造用フィルムであって、
前記セパレータは、前記ダイシングテープの外周に沿った切れ込みがあり、
前記切れ込みの深さが前記セパレータの厚さの2/3以下であることを特徴とする半導体装置製造用フィルム。 - 請求項1に記載の半導体装置製造用フィルムの製造方法であって、
ダイシングテープ上に接着剤層が積層された接着剤層付きダイシングテープが、前記接着剤層を貼り合わせ面にしてセパレータに積層されたセパレータ付フィルムを準備する工程と、
貼り着ける対象の半導体ウエハに対応する大きさに、前記セパレータ付フィルムを切断する工程とを具備しており、
前記切断は、前記ダイシングテープ側から前記セパレータの厚さの2/3以下の深さまで行うことを特徴とする半導体装置製造用フィルムの製造方法。 - 請求項1に記載の半導体装置製造用フィルムを用いた半導体装置の製造方法であって、
前記半導体装置製造用フィルムからセパレータを剥離する工程と、
前記接着剤層上に半導体ウエハを貼着する工程とを具備することを特徴とする半導体装置の製造方法。 - ダイシングテープが所定の間隔をおいてセパレータに積層された半導体装置製造用フィルムであって、
前記セパレータは、前記ダイシングテープの外周に沿った切れ込みがあり、
前記切れ込みの深さが前記セパレータの厚さの2/3以下であることを特徴とする半導体装置製造用フィルム。 - 請求項4に記載の半導体装置製造用フィルムの製造方法であって、
ダイシングテープとセパレータとが積層されたセパレータ付フィルムを準備する工程と、
貼り着ける対象の半導体ウエハに対応する大きさに、前記セパレータ付フィルムを切断する工程とを具備しており、
前記切断は、前記ダイシングテープ側から前記セパレータの厚さの2/3以下の深さまで行うことを特徴とする半導体装置製造用フィルムの製造方法。 - 請求項4に記載の半導体装置製造用フィルムを用いた半導体装置の製造方法であって、
前記半導体装置製造用フィルムからセパレータを剥離する工程と、
前記ダイシングテープ上に半導体ウエハを貼着する工程とを具備することを特徴とする半導体装置の製造方法。
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US13/170,581 US8986486B2 (en) | 2010-07-28 | 2011-06-28 | Film for semiconductor device production, method for producing film for semiconductor device production, and method for semiconductor device production |
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TW105104353A TWI649800B (zh) | 2010-07-28 | 2011-06-30 | 半導體裝置製造用膜、半導體裝置製造用膜之製造方法及半導體裝置之製造方法 |
CN201610633005.7A CN106206396B (zh) | 2010-07-28 | 2011-06-30 | 半导体器件生产用膜、半导体器件生产用膜的生产方法和半导体器件的生产方法 |
CN201110185003.3A CN102347264B (zh) | 2010-07-28 | 2011-06-30 | 半导体器件生产用膜、半导体器件生产用膜的生产方法和半导体器件的生产方法 |
TW100123190A TWI647752B (zh) | 2010-07-28 | 2011-06-30 | 半導體裝置製造用膜、半導體裝置製造用膜之製造方法及半導體裝置之製造方法 |
US14/624,702 US9761475B2 (en) | 2010-07-28 | 2015-02-18 | Film for semiconductor device production, method for producing film for semiconductor device production, and method for semiconductor device production |
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KR20120011319A (ko) | 2012-02-07 |
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CN102347264A (zh) | 2012-02-08 |
KR101544240B1 (ko) | 2015-08-12 |
US20150162236A1 (en) | 2015-06-11 |
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