JP2012033476A - 蓄電装置及び蓄電装置の作製方法 - Google Patents
蓄電装置及び蓄電装置の作製方法 Download PDFInfo
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- JP2012033476A JP2012033476A JP2011141333A JP2011141333A JP2012033476A JP 2012033476 A JP2012033476 A JP 2012033476A JP 2011141333 A JP2011141333 A JP 2011141333A JP 2011141333 A JP2011141333 A JP 2011141333A JP 2012033476 A JP2012033476 A JP 2012033476A
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- 238000003860 storage Methods 0.000 title claims abstract description 86
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 75
- 238000004381 surface treatment Methods 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 33
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 239000003792 electrolyte Substances 0.000 claims description 15
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 12
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 19
- 229910001416 lithium ion Inorganic materials 0.000 description 19
- 239000011149 active material Substances 0.000 description 17
- 238000012545 processing Methods 0.000 description 16
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 14
- 230000006870 function Effects 0.000 description 13
- 239000010936 titanium Substances 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000007774 positive electrode material Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 229910052744 lithium Inorganic materials 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 229910021332 silicide Inorganic materials 0.000 description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000376 reactant Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- -1 Polypropylene Polymers 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000007599 discharging Methods 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000007773 negative electrode material Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 210000000352 storage cell Anatomy 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- WEAMLHXSIBDPGN-UHFFFAOYSA-N (4-hydroxy-3-methylphenyl) thiocyanate Chemical compound CC1=CC(SC#N)=CC=C1O WEAMLHXSIBDPGN-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910012851 LiCoO 2 Inorganic materials 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910001413 alkali metal ion Inorganic materials 0.000 description 2
- 229910001420 alkaline earth metal ion Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000003795 desorption Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 230000005674 electromagnetic induction Effects 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000002642 lithium compounds Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 238000009774 resonance method Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910021355 zirconium silicide Inorganic materials 0.000 description 2
- 229920003026 Acene Polymers 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OIFBSDVPJOWBCH-UHFFFAOYSA-N Diethyl carbonate Chemical compound CCOC(=O)OCC OIFBSDVPJOWBCH-UHFFFAOYSA-N 0.000 description 1
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 1
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910018119 Li 3 PO 4 Inorganic materials 0.000 description 1
- 229910015015 LiAsF 6 Inorganic materials 0.000 description 1
- 229910013063 LiBF 4 Inorganic materials 0.000 description 1
- 229910013684 LiClO 4 Inorganic materials 0.000 description 1
- 229910011281 LiCoPO 4 Inorganic materials 0.000 description 1
- 229910010586 LiFeO 2 Inorganic materials 0.000 description 1
- 229910010707 LiFePO 4 Inorganic materials 0.000 description 1
- 229910015645 LiMn Inorganic materials 0.000 description 1
- 229910015643 LiMn 2 O 4 Inorganic materials 0.000 description 1
- 229910013290 LiNiO 2 Inorganic materials 0.000 description 1
- 229910013086 LiNiPO Inorganic materials 0.000 description 1
- 229910013870 LiPF 6 Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 159000000009 barium salts Chemical class 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- PPYIVKOTTQCYIV-UHFFFAOYSA-L beryllium;selenate Chemical compound [Be+2].[O-][Se]([O-])(=O)=O PPYIVKOTTQCYIV-UHFFFAOYSA-L 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 159000000007 calcium salts Chemical class 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000009194 climbing Effects 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- IEJIGPNLZYLLBP-UHFFFAOYSA-N dimethyl carbonate Chemical compound COC(=O)OC IEJIGPNLZYLLBP-UHFFFAOYSA-N 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910003002 lithium salt Inorganic materials 0.000 description 1
- 159000000002 lithium salts Chemical class 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 159000000003 magnesium salts Chemical class 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052990 silicon hydride Inorganic materials 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 159000000008 strontium salts Chemical class 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/84—Electrodes with an enlarged surface, e.g. formed by texturisation being a rough surface, e.g. using hemispherical grains
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/04—Hybrid capacitors
- H01G11/06—Hybrid capacitors with one of the electrodes allowing ions to be reversibly doped thereinto, e.g. lithium ion capacitors [LIC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/10—Multiple hybrid or EDL capacitors, e.g. arrays or modules
- H01G11/12—Stacked hybrid or EDL capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/26—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features
- H01G11/28—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features arranged or disposed on a current collector; Layers or phases between electrodes and current collectors, e.g. adhesives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/66—Current collectors
- H01G11/70—Current collectors characterised by their structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
- H01G11/86—Processes for the manufacture of hybrid or EDL capacitors, or components thereof specially adapted for electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/052—Li-accumulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/04—Processes of manufacture in general
- H01M4/0402—Methods of deposition of the material
- H01M4/0421—Methods of deposition of the material involving vapour deposition
- H01M4/0428—Chemical vapour deposition
-
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Abstract
【解決手段】集電体と、該集電体上に密着して形成されたウィスカーを有する結晶性半導体層とを有する蓄電装置である。そして、密着性の向上により、結晶性半導体層の脱離が抑制され、サイクル数1回目に対する10回目の比容量が90%以上のサイクル特性を実現する。また、サイクル数1回目に対する100回目の比容量は70%以上のサイクル特性を実現するものである。
【選択図】図1
Description
本実施の形態では、蓄電装置の作製方法、構造、及び性能について説明する。
本実施の形態では、蓄電装置の構造について具体例を示す。
本実施の形態では、蓄電装置の構造について、図4を用いて説明する。
本実施の形態では、実施の形態2で説明した蓄電装置の応用形態について図5を用いて説明する。
本実施の形態では、本発明の一態様に係る二次電池を、無線給電システム(以下、RF給電システムと呼ぶ。)に用いた場合の一例を、図6及び図7のブロック図を用いて説明する。なお、各ブロック図では、受電装置および給電装置内の構成要素を機能ごとに分類し、互いに独立したブロックとして示しているが、実際の構成要素は機能ごとに完全に切り分けることが困難であり、一つの構成要素が複数の機能に係わることもあり得る。
103 結晶性半導体層
103c 突起
105 破線
107 層
151 蓄電装置
153 外装部材
155 蓄電セル
157 端子部
159 端子部
163 負極
165 正極
167 セパレータ
169 電解質
171 負極集電体
173 負極活物質層
175 正極集電体
177 正極活物質層
200 集電体
202 活物質層
204 電極
206 筐体
210 セパレータ
220 リング状絶縁体
230 参照電極活物質層
232 参照電極
240 スペーサー
242 ワッシャー
244 筐体
501 車椅子
503 座部
507 フットレスト
509 アームレスト
511 ハンドル
513 コントローラ
515 フレーム
517 前輪
519 後輪
521 駆動部
523 制御部
103a 結晶性半導体領域
103b 結晶性半導体領域
103d 領域
113a 突起
113b 突起
600 受電装置
601 受電装置部
602 受電装置用アンテナ回路
603 信号処理回路
604 二次電池
605 整流回路
606 変調回路
607 電源回路
610 電源負荷部
700 給電装置
701 給電装置用アンテナ回路
702 信号処理回路
703 整流回路
704 変調回路
705 復調回路
706 発振回路
3050 電気自動車
3051 蓄電装置
3053 制御回路
3055 コンピュータ
3057 駆動装置
Claims (12)
- 集電体と、前記集電体上に形成されたウィスカーを有する結晶性半導体層とを有し、
サイクル数1回目に対する10回目の比容量が90%以上であることを特徴とする蓄電装置。 - 集電体と、前記集電体上に密着して形成されたウィスカーを有する結晶性半導体層とを有し、
サイクル数1回目に対する10回目の比容量が90%以上であることを特徴とする蓄電装置。 - 集電体と、前記集電体上に密着して形成されたウィスカーを有する結晶性半導体層とを有する第1の電極、電解質、及び前記電解質を介して前記第1の電極に対向して設けられた第2の電極を有し、
サイクル数1回目に対する10回目の比容量が90%以上であることを特徴とする蓄電装置。 - 請求項1乃至請求項3のいずれか一において、
前記集電体は、表面処理されていることを特徴とする蓄電装置。 - 請求項4において、
前記表面処理は、フッ酸を用いて行われていることを特徴とする蓄電装置。 - 請求項1乃至請求項3のいずれか一において、
前記集電体の表面には、前記集電体の材料と前記結晶性半導体層の材料とを含む層が形成されていることを特徴とする蓄電装置。 - 請求項1乃至請求項6のいずれか一に記載の蓄電装置が搭載されたことを特徴とする電気推進車両。
- 集電体に表面処理を行い、
前記集電体上に、ウィスカーを有する結晶性半導体層を形成することを特徴とする蓄電装置の作製方法。 - 集電体をフッ酸を用いて処理し、
前記集電体上に、ウィスカーを有する結晶性半導体層を形成することを特徴とする蓄電装置の作製方法。 - 集電体をフッ酸を用いて処理し、
前記集電体上に、低圧化学的気相堆積法により、ウィスカーを有する結晶性半導体層を形成することを特徴とする蓄電装置の作製方法。 - 集電体をフッ酸を用いて処理し、
前記集電体上に、シリコンを含む原料ガスを用い、低圧化学的気相堆積法により、ウィスカーを有する結晶性シリコン層を形成することを特徴とする蓄電装置の作製方法。 - 請求項9乃至請求項11のいずれか一において、
前記集電体をフッ酸を用いて処理した後、流水により処理することを特徴とする蓄電装置の作製方法。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7498361B2 (ja) | 2020-08-27 | 2024-06-11 | ビーワイディー カンパニー リミテッド | 極板及びリチウムイオン電池 |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9941709B2 (en) | 2009-02-25 | 2018-04-10 | Cf Traverse Llc | Hybrid energy storage device charging |
US10056602B2 (en) | 2009-02-25 | 2018-08-21 | Cf Traverse Llc | Hybrid energy storage device production |
US9412998B2 (en) | 2009-02-25 | 2016-08-09 | Ronald A. Rojeski | Energy storage devices |
US10727481B2 (en) | 2009-02-25 | 2020-07-28 | Cf Traverse Llc | Energy storage devices |
US9362549B2 (en) | 2011-12-21 | 2016-06-07 | Cpt Ip Holdings, Llc | Lithium-ion battery anode including core-shell heterostructure of silicon coated vertically aligned carbon nanofibers |
US9966197B2 (en) | 2009-02-25 | 2018-05-08 | Cf Traverse Llc | Energy storage devices including support filaments |
US9979017B2 (en) | 2009-02-25 | 2018-05-22 | Cf Traverse Llc | Energy storage devices |
US10205166B2 (en) | 2008-02-25 | 2019-02-12 | Cf Traverse Llc | Energy storage devices including stabilized silicon |
US9349544B2 (en) | 2009-02-25 | 2016-05-24 | Ronald A Rojeski | Hybrid energy storage devices including support filaments |
US11233234B2 (en) | 2008-02-25 | 2022-01-25 | Cf Traverse Llc | Energy storage devices |
US9705136B2 (en) | 2008-02-25 | 2017-07-11 | Traverse Technologies Corp. | High capacity energy storage |
US9431181B2 (en) | 2009-02-25 | 2016-08-30 | Catalyst Power Technologies | Energy storage devices including silicon and graphite |
US10193142B2 (en) | 2008-02-25 | 2019-01-29 | Cf Traverse Llc | Lithium-ion battery anode including preloaded lithium |
US9917300B2 (en) | 2009-02-25 | 2018-03-13 | Cf Traverse Llc | Hybrid energy storage devices including surface effect dominant sites |
US9543577B2 (en) | 2010-12-16 | 2017-01-10 | Semiconductor Energy Laboratory Co., Ltd. | Active material, electrode including the active material and manufacturing method thereof, and secondary battery |
JP6035054B2 (ja) | 2011-06-24 | 2016-11-30 | 株式会社半導体エネルギー研究所 | 蓄電装置の電極の作製方法 |
JP6025284B2 (ja) | 2011-08-19 | 2016-11-16 | 株式会社半導体エネルギー研究所 | 蓄電装置用の電極及び蓄電装置 |
WO2013027561A1 (en) | 2011-08-19 | 2013-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing graphene-coated object, negative electrode of secondary battery including graphene-coated object, and secondary battery including the negative electrode |
KR20130024769A (ko) | 2011-08-30 | 2013-03-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 축전 장치 |
JP6000017B2 (ja) | 2011-08-31 | 2016-09-28 | 株式会社半導体エネルギー研究所 | 蓄電装置及びその作製方法 |
JP6034621B2 (ja) | 2011-09-02 | 2016-11-30 | 株式会社半導体エネルギー研究所 | 蓄電装置の電極および蓄電装置 |
KR102581914B1 (ko) | 2013-04-19 | 2023-09-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 이차 전지 및 그 제작 방법 |
JP6871676B2 (ja) * | 2015-11-26 | 2021-05-12 | 株式会社ジェイテクト | 蓄電デバイス及び蓄電デバイスの製造方法 |
CN106532061B (zh) * | 2016-12-07 | 2019-09-27 | 合肥国轩高科动力能源有限公司 | 一种锂离子电池正极集流体处理装置及其处理方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004171875A (ja) * | 2002-11-19 | 2004-06-17 | Sony Corp | 負極およびそれを用いた電池 |
JP2004533699A (ja) * | 2000-06-15 | 2004-11-04 | ザ ユニバーシティ オブ ノース カロライナ − チャペル ヒル | ナノ構造をベースとする高エネルギー容量の材料 |
JP2008512838A (ja) * | 2004-09-11 | 2008-04-24 | エルジー・ケム・リミテッド | 再充電可能なリチウムバッテリー用のSi薄膜アノードの性能を改良する方法 |
WO2009038897A2 (en) * | 2007-08-10 | 2009-03-26 | The Board Of Trustees Of The Leland Stanford Junior University | Nanowire battery methods and arrangements |
Family Cites Families (69)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1198900A (en) | 1967-10-25 | 1970-07-15 | Hitachi Ltd | Planar Transistor and Method of Making the Same |
US4155781A (en) | 1976-09-03 | 1979-05-22 | Siemens Aktiengesellschaft | Method of manufacturing solar cells, utilizing single-crystal whisker growth |
US5338625A (en) | 1992-07-29 | 1994-08-16 | Martin Marietta Energy Systems, Inc. | Thin film battery and method for making same |
CA2110097C (en) | 1992-11-30 | 2002-07-09 | Soichiro Kawakami | Secondary battery |
JP3495814B2 (ja) | 1994-05-30 | 2004-02-09 | キヤノン株式会社 | 電池用電極及び該電極を有するリチウム二次電池 |
EP0690517B1 (en) | 1994-05-30 | 2003-10-01 | Canon Kabushiki Kaisha | Rechargeable lithium battery |
EP0693792B1 (en) | 1994-07-19 | 2003-01-08 | Canon Kabushiki Kaisha | Rechargeable batteries having a specific anode and process for the production of them |
JP3245009B2 (ja) | 1994-07-19 | 2002-01-07 | キヤノン株式会社 | 二次電池及び該二次電池の製造方法 |
RU2099808C1 (ru) | 1996-04-01 | 1997-12-20 | Евгений Инвиевич Гиваргизов | Способ выращивания ориентированных систем нитевидных кристаллов и устройство для его осуществления (варианты) |
JP2001052747A (ja) | 1999-08-06 | 2001-02-23 | Matsushita Electric Ind Co Ltd | リチウム二次電池 |
WO2001029918A1 (fr) | 1999-10-22 | 2001-04-26 | Sanyo Electric Co., Ltd | Electrode pour accumulateur au lithium et accumulateur au lithium |
JP2002083594A (ja) | 1999-10-22 | 2002-03-22 | Sanyo Electric Co Ltd | リチウム電池用電極並びにこれを用いたリチウム電池及びリチウム二次電池 |
US6685804B1 (en) | 1999-10-22 | 2004-02-03 | Sanyo Electric Co., Ltd. | Method for fabricating electrode for rechargeable lithium battery |
AU7950900A (en) | 1999-10-22 | 2001-05-08 | Sanyo Electric Co., Ltd. | Electrode for lithium secondary cell and lithium secondary cell |
JP3702223B2 (ja) | 1999-10-22 | 2005-10-05 | 三洋電機株式会社 | リチウム電池用電極材料の製造方法 |
CA2388711A1 (en) | 1999-10-22 | 2001-05-03 | Sanyo Electric Co., Ltd. | Electrode for use in lithium battery and rechargeable lithium battery |
EP1231654A4 (en) | 1999-10-22 | 2007-10-31 | Sanyo Electric Co | ELECTRODE FOR LITHIUM BATTERY AND LITHIUM BATTERY |
JP2001210315A (ja) | 2000-01-25 | 2001-08-03 | Sanyo Electric Co Ltd | リチウム二次電池用電極及びこれを用いたリチウム二次電池 |
JP3955727B2 (ja) * | 2000-12-01 | 2007-08-08 | 三洋電機株式会社 | リチウム二次電池用電極の製造方法 |
US6815003B2 (en) * | 2000-12-01 | 2004-11-09 | Sanyo Electric Co., Ltd. | Method for fabricating electrode for lithium secondary battery |
JP2002237294A (ja) * | 2001-02-08 | 2002-08-23 | Tokuyama Corp | リチウム二次電池用負極 |
JP4082922B2 (ja) | 2001-04-13 | 2008-04-30 | 三洋電機株式会社 | リチウム二次電池用電極及びその製造方法 |
US6844113B2 (en) | 2001-04-13 | 2005-01-18 | Sanyo Electric Co., Ltd. | Electrode for lithium secondary battery and method for producing the same |
JP2003246700A (ja) | 2002-02-22 | 2003-09-02 | Japan Science & Technology Corp | シリコンナノニードルの製法 |
JP4140765B2 (ja) | 2002-09-19 | 2008-08-27 | コバレントマテリアル株式会社 | 針状シリコン結晶およびその製造方法 |
JP3933573B2 (ja) | 2002-12-26 | 2007-06-20 | 東洋アルミニウム株式会社 | リチウムイオン電池の集電体用アルミニウム箔、リチウムイオン電池の集電体およびリチウムイオン電池 |
US7015496B2 (en) | 2002-12-27 | 2006-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Field emission device and manufacturing method thereof |
JP2004281317A (ja) | 2003-03-18 | 2004-10-07 | Matsushita Electric Ind Co Ltd | 非水電解質二次電池用電極材料とその製造方法、ならびにそれを用いた非水電解質二次電池 |
US20050037935A1 (en) * | 2003-08-11 | 2005-02-17 | Abd Elhamid Mahmoud H. | Composition and method for surface treatment of oxidized metal |
WO2005090651A1 (ja) | 2004-03-23 | 2005-09-29 | Kanazawa R And D Ltd. | 高アスペクト比酸化鉄ウイスカー、高アスペクト比酸化チタンウイスカー及びこれらを含む構造並びにその製造方法 |
JP2008522360A (ja) | 2004-11-26 | 2008-06-26 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 電気化学的エネルギー源、電子モジュール、電子デバイス、及び該エネルギー源の製造方法 |
WO2006056959A1 (en) | 2004-11-26 | 2006-06-01 | Koninklijke Philips Electronics N.V. | Method of modifying surface area and electronic device |
US9614214B2 (en) * | 2004-12-16 | 2017-04-04 | Lg Chem, Ltd. | Method for improvement of performance of si thin film anode for lithium rechargeable battery |
US20090050204A1 (en) | 2007-08-03 | 2009-02-26 | Illuminex Corporation. | Photovoltaic device using nanostructured material |
EP1986253B1 (en) * | 2006-02-14 | 2011-09-07 | Panasonic Corporation | Electrode for nonaqueous electrolyte secondary battery, method for producing same , and nonaqueous electrolyte secondary battery comprising such electrode for nonaqueous secondary battery |
KR101530379B1 (ko) | 2006-03-29 | 2015-06-22 | 삼성전자주식회사 | 다공성 글래스 템플릿을 이용한 실리콘 나노 와이어의제조방법 및 이에 의해 형성된 실리콘 나노 와이어를포함하는 소자 |
KR100723882B1 (ko) | 2006-06-15 | 2007-05-31 | 한국전자통신연구원 | 실리콘 나노점 박막을 이용한 실리콘 나노와이어 제조 방법 |
US7964307B2 (en) | 2006-07-24 | 2011-06-21 | Panasonic Corporation | Negative electrode for lithium ion secondary battery, method for producing the same, and lithium ion secondary battery |
KR101478810B1 (ko) | 2006-07-28 | 2015-01-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 축전 장치 |
KR100906250B1 (ko) | 2006-09-04 | 2009-07-07 | 주식회사 엘지화학 | 바인더로서 고중합도 폴리비닐알콜과 폴리비닐피롤리돈의혼합물을 포함하는 전극 합제 및 이를 포함하는 리튬이차전지 |
JP5272297B2 (ja) | 2006-10-17 | 2013-08-28 | 日産自動車株式会社 | 電池用電極 |
CN101356669B (zh) * | 2006-10-19 | 2011-04-06 | 松下电器产业株式会社 | 非水电解质二次电池和非水电解质二次电池用负极的制造方法 |
WO2008090876A1 (ja) | 2007-01-26 | 2008-07-31 | Panasonic Corporation | エネルギーデバイス、その製造方法及びそれを搭載した装置 |
US8951672B2 (en) | 2007-01-30 | 2015-02-10 | Sony Corporation | Anode, method of manufacturing it, battery, and method of manufacturing it |
JP4525742B2 (ja) * | 2007-01-30 | 2010-08-18 | ソニー株式会社 | リチウムイオン二次電池用負極およびリチウムイオン二次電池 |
JP5169156B2 (ja) | 2007-11-09 | 2013-03-27 | パナソニック株式会社 | 電気化学素子用電極 |
KR100898293B1 (ko) | 2007-11-27 | 2009-05-18 | 삼성에스디아이 주식회사 | 리튬 이차 전지용 음극 활물질 및 이의 제조 방법 |
JP2009134917A (ja) | 2007-11-29 | 2009-06-18 | Panasonic Corp | 非水系二次電池用電極板およびこれを用いた非水系二次電池 |
US8481214B2 (en) | 2008-02-25 | 2013-07-09 | Catalyst Power Technologies | Electrodes including support filament with collar stop |
KR101307623B1 (ko) | 2008-02-25 | 2013-09-12 | 로날드 앤쏘니 로제스키 | 고용량 전극 |
US20090317726A1 (en) | 2008-04-08 | 2009-12-24 | Sony Corporation | Anode and secondary battery |
US9362563B2 (en) | 2008-04-11 | 2016-06-07 | Panasonic Intellectual Property Management Co., Ltd. | Energy storage device, method for manufacturing the same, and apparatus including the same |
JP5422923B2 (ja) * | 2008-05-29 | 2014-02-19 | ソニー株式会社 | 負極および二次電池、ならびに負極および二次電池の製造方法 |
TW201004099A (en) | 2008-07-14 | 2010-01-16 | Lite On Technology Corp | Modularized energy storage device |
TW201004098A (en) | 2008-07-14 | 2010-01-16 | Lite On Technology Corp | Energy storage device, access device, and a combination thereof |
JP5564768B2 (ja) | 2008-07-30 | 2014-08-06 | 日産自動車株式会社 | 電気化学デバイス |
JP2010103051A (ja) | 2008-10-27 | 2010-05-06 | Nissan Motor Co Ltd | 蓄電デバイス用複合電極、その製造方法及び蓄電デバイス |
TWM361106U (en) | 2009-02-11 | 2009-07-11 | Neo Solar Power Corp | Electrode structure and solar cell applying the same |
US8927156B2 (en) | 2009-02-19 | 2015-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device |
JP2010262752A (ja) | 2009-04-30 | 2010-11-18 | Furukawa Electric Co Ltd:The | リチウムイオン二次電池用の負極、それを用いたリチウムイオン二次電池、リチウムイオン二次電池用の負極の製造方法 |
US9061902B2 (en) | 2009-12-18 | 2015-06-23 | The Board Of Trustees Of The Leland Stanford Junior University | Crystalline-amorphous nanowires for battery electrodes |
WO2011136028A1 (en) | 2010-04-28 | 2011-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device and method for manufacturing the same |
US20110294005A1 (en) | 2010-05-28 | 2011-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device, electrode, and electric device |
CN102906913B (zh) | 2010-06-01 | 2016-08-03 | 株式会社半导体能源研究所 | 蓄能装置及其制造方法 |
WO2011152190A1 (en) | 2010-06-02 | 2011-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device and method for manufacturing the same |
WO2011155397A1 (en) | 2010-06-11 | 2011-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device |
US8846530B2 (en) | 2010-06-30 | 2014-09-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming semiconductor region and method for manufacturing power storage device |
US20120003383A1 (en) | 2010-06-30 | 2012-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of energy storage device |
JP6035054B2 (ja) | 2011-06-24 | 2016-11-30 | 株式会社半導体エネルギー研究所 | 蓄電装置の電極の作製方法 |
-
2011
- 2011-06-06 WO PCT/JP2011/063434 patent/WO2012002136A1/en active Application Filing
- 2011-06-21 US US13/164,839 patent/US9960225B2/en not_active Expired - Fee Related
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-
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- 2016-12-02 JP JP2016234743A patent/JP2017084797A/ja not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004533699A (ja) * | 2000-06-15 | 2004-11-04 | ザ ユニバーシティ オブ ノース カロライナ − チャペル ヒル | ナノ構造をベースとする高エネルギー容量の材料 |
JP2004171875A (ja) * | 2002-11-19 | 2004-06-17 | Sony Corp | 負極およびそれを用いた電池 |
JP2008512838A (ja) * | 2004-09-11 | 2008-04-24 | エルジー・ケム・リミテッド | 再充電可能なリチウムバッテリー用のSi薄膜アノードの性能を改良する方法 |
WO2009038897A2 (en) * | 2007-08-10 | 2009-03-26 | The Board Of Trustees Of The Leland Stanford Junior University | Nanowire battery methods and arrangements |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7498361B2 (ja) | 2020-08-27 | 2024-06-11 | ビーワイディー カンパニー リミテッド | 極板及びリチウムイオン電池 |
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JP2017084797A (ja) | 2017-05-18 |
WO2012002136A1 (en) | 2012-01-05 |
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JP2015222725A (ja) | 2015-12-10 |
US20120003530A1 (en) | 2012-01-05 |
US9960225B2 (en) | 2018-05-01 |
JP5780852B2 (ja) | 2015-09-16 |
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