JP2012028396A - フリップチップ型半導体裏面用フィルム、ダイシングテープ一体型半導体裏面用フィルム、半導体装置の製造方法、及び、フリップチップ型半導体装置 - Google Patents
フリップチップ型半導体裏面用フィルム、ダイシングテープ一体型半導体裏面用フィルム、半導体装置の製造方法、及び、フリップチップ型半導体装置 Download PDFInfo
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- JP2012028396A JP2012028396A JP2010163047A JP2010163047A JP2012028396A JP 2012028396 A JP2012028396 A JP 2012028396A JP 2010163047 A JP2010163047 A JP 2010163047A JP 2010163047 A JP2010163047 A JP 2010163047A JP 2012028396 A JP2012028396 A JP 2012028396A
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- C—CHEMISTRY; METALLURGY
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Abstract
【解決手段】被着体上にフリップチップ接続された半導体素子の裏面に形成するためのフリップチップ型半導体裏面用フィルムであって、波長532nm又は1064nmにおける光線透過率が20%以下であり、レーザーマーキングした後のマーキング部とマーキング部以外とのコントラストが20%以上であるフリップチップ型半導体裏面用フィルム。
【選択図】 図1
Description
また、波長532nm又は1064nmにおける光線透過率が20%以下であり、レーザーマーキングした後のマーキング部と非マーキング部とのコントラストが20%以上であるフリップチップ型半導体裏面用フィルムが一体的に形成されているので、フリップチップ型半導体裏面用フィルムにレーザーマーキングする際、半導体素子に悪影響が及ぶことを効果的に防止しながら、視認性に優れた各種情報を付与することができる。
図1で示されるように、ダイシングテープ一体型半導体裏面用フィルム1は、基材31上に粘着剤層32が設けられたダイシングテープ3と、前記粘着剤層上に設けられたフリップチップ型半導体裏面用フィルム(「半導体裏面用フィルム」という場合がある)2とを備える構成である。また、本発明のダイシングテープ一体型半導体裏面用フィルムは、図1で示されているように、ダイシングテープ3の粘着剤層32上において、半導体ウエハの貼着部分に対応する部分33のみに半導体裏面用フィルム2が形成された構成であってもよいが、粘着剤層32の全面に半導体裏面用フィルムが形成された構成でもよく、また、半導体ウエハの貼着部分に対応する部分33より大きく且つ粘着剤層32の全面よりも小さい部分に半導体裏面用フィルムが形成された構成でもよい。なお、半導体裏面用フィルム2の表面(ウエハの裏面に貼着される側の表面)は、ウエハ裏面に貼着されるまでの間、セパレータ等により保護されていてもよい。
半導体裏面用フィルム2はフィルム状の形態を有している。半導体裏面用フィルム2は、通常、製品としてのダイシングテープ一体型半導体裏面用フィルムの形態では、未硬化状態(半硬化状態を含む)であり、ダイシングテープ一体型半導体裏面用フィルムを半導体ウエハに貼着させた後に熱硬化される(詳細については後述する)。また、半導体裏面用フィルム2は、レーザーマーキングにより、文字情報や図形情報等の各種情報を付与させることができる。
(1)ダイシングテープに積層させずに、厚さ(平均厚さ):20μmの半導体裏面用フィルムを作製する。
(2)該半導体裏面用フィルム(厚さ:20μm)に、波長:300nm〜1100nmの光線[装置:島津製作所製の可視光発生装置(商品名「ABSORPTION SPECTRO PHOTOMETR」)]を、所定の強度で照射する。
(3)分光光度計(島津製作所製社製の分光光度計「ABSORPTION SPECTRO PHOTOMETR UV−2550」)を用いて、透過した波長532nm及び1064nmの光線の強度を測定する。
(4)波長532nm及び1064nmの光線の半導体裏面用フィルムの透過前後の強度の変化により、波長532nm及び1064nmの光線透過率(%)を求める。
(式中、L20は光路長、αは吸光係数、Cは試料濃度を表す)
また、厚さX(μm)での吸光度AXは下記式(2)により表すことができる。
AX=α×LX×C (2)
更に、厚さ20μmでの吸光度A20は下記式(3)により表すことができる。
A20=−log10T20 (3)
(式中、T20は厚さ20μmでの光線透過率を表す)
前記式(1)〜(3)より、吸光度AXは、
AX=A20×(LX/L20)
=−[log10(T20)]×(LX/L20)
と表すことができる。これにより、厚さX(μm)での光線透過率TX(%)は、下記式により算出することができる。
TX=10−AX
但し、AX=−[log10(T20)]×(LX/L20)
[(マーキング部の明度−非マーキング部の明度)/マーキング部の明度]×100(%)
なお、半導体裏面用フィルム2は単層でもよく複数の層が積層された積層フィルムであってもよいが、積層フィルムの場合、前記コントラストは、積層フィルム全体として20%以上の範囲内であればよい。
(レーザー照射条件)
波長:532nm
強度:1.0W
スキャンスピード:700mm/sec
Qスイッチ周波数:64kHz
<ゲル分率の測定方法>
半導体裏面用フィルムから約0.1gをサンプリングして精秤し(試料の重量)、該サンプルをメッシュ状シートで包んだ後、約50mlのトルエン中に室温で1週間浸漬させる。その後、溶剤不溶分(メッシュ状シートの内容物)をトルエンから取り出し、130℃で約2時間乾燥させ、乾燥後の溶剤不溶分を秤量し(浸漬・乾燥後の重量)、下記式(a)よりゲル分率(重量%)を算出する。
ゲル分率(重量%)=[(浸漬・乾燥後の重量)/(試料の重量)]×100 (a)
前記ダイシングテープ3は、基材31上に粘着剤層32が形成されて構成されている。このように、ダイシングテープ3は、基材31と、粘着剤層32とが積層された構成を有していればよい。基材(支持基材)は粘着剤層等の支持母体として用いることができる。前記基材31は放射線透過性を有していることが好ましい。前記基材31としては、例えば、紙などの紙系基材;布、不織布、フェルト、ネットなどの繊維系基材;金属箔、金属板などの金属系基材;プラスチックのフィルムやシートなどのプラスチック系基材;ゴムシートなどのゴム系基材;発泡シートなどの発泡体や、これらの積層体[特に、プラスチック系基材と他の基材との積層体や、プラスチックフィルム(又はシート)同士の積層体など]等の適宜な薄葉体を用いることができる。本発明では、基材としては、プラスチックのフィルムやシートなどのプラスチック系基材を好適に用いることができる。このようなプラスチック材における素材としては、例えば、ポリエチレン(PE)、ポリプロピレン(PP)、エチレン−プロピレン共重合体等のオレフィン系樹脂;エチレン−酢酸ビニル共重合体(EVA)、アイオノマー樹脂、エチレン−(メタ)アクリル酸共重合体、エチレン−(メタ)アクリル酸エステル(ランダム、交互)共重合体等のエチレンをモノマー成分とする共重合体;ポリエチレンテレフタレート(PET)、ポリエチレンナフタレート(PEN)、ポリブチレンテレフタレート(PBT)等のポリエステル;アクリル系樹脂;ポリ塩化ビニル(PVC);ポリウレタン;ポリカーボネート;ポリフェニレンスルフィド(PPS);ポリアミド(ナイロン)、全芳香族ポリアミド(アラミド)等のアミド系樹脂;ポリエーテルエーテルケトン(PEEK);ポリイミド;ポリエーテルイミド;ポリ塩化ビニリデン;ABS(アクリロニトリル−ブタジエン−スチレン共重合体);セルロース系樹脂;シリコーン樹脂;フッ素樹脂などが挙げられる。
本実施の形態に係るダイシングテープ一体型半導体裏面用フィルムの製造方法について、図1に示すダイシングテープ一体型半導体裏面用フィルム1を例にして説明する。先ず、基材31は、従来公知の製膜方法により製膜することができる。当該製膜方法としては、例えばカレンダー製膜法、有機溶媒中でのキャスティング法、密閉系でのインフレーション押出法、Tダイ押出法、共押出し法、ドライラミネート法等が例示できる。
半導体ウエハとしては、公知乃至慣用の半導体ウエハであれば特に制限されず、各種素材の半導体ウエハから適宜選択して用いることができる。本発明では、半導体ウエハとしては、シリコンウエハを好適に用いることができる。
本実施の形態に係る半導体装置の製造方法について、図2を参照しながら以下に説明する。図2は、前記ダイシングテープ一体型半導体裏面用フィルム1を用いた場合の半導体装置の製造方法を示す断面模式図である。
先ず、図2(a)で示されるように、ダイシングテープ一体型半導体裏面用フィルム1の半導体裏面用フィルム2上に任意に設けられたセパレータを適宜に剥離し、当該半導体裏面用フィルム2上に半導体ウエハ4を貼着して、これを接着保持させ固定する(マウント工程)。このとき前記半導体裏面用フィルム2は未硬化状態(半硬化状態を含む)にある。また、ダイシングテープ一体型半導体裏面用フィルム1は、半導体ウエハ4の裏面に貼着される。半導体ウエハ4の裏面とは、回路面とは反対側の面(非回路面、非電極形成面などとも称される)を意味する。貼着方法は特に限定されないが、圧着による方法が好ましい。圧着は、通常、圧着ロール等の押圧手段により押圧しながら行われる。
次に、図2(b)で示されるように、半導体ウエハ4のダイシングを行う。これにより、半導体ウエハ4を所定のサイズに切断して個片化(小片化)し、半導体チップ5を製造する。ダイシングは、例えば、半導体ウエハ4の回路面側から常法に従い行われる。また、本工程では、例えば、ダイシングテープ一体型半導体裏面用フィルム1まで切込みを行うフルカットと呼ばれる切断方式等を採用できる。本工程で用いるダイシング装置としては特に限定されず、従来公知のものを用いることができる。また、半導体ウエハ4は、半導体裏面用フィルムを有するダイシングテープ一体型半導体裏面用フィルム1により優れた密着性で接着固定されているので、チップ欠けやチップ飛びを抑制できると共に、半導体ウエハ4の破損も抑制できる。なお、半導体裏面用フィルム2がエポキシ樹脂を含む樹脂組成物により形成されていると、ダイシングにより切断されても、その切断面において半導体裏面用フィルムの接着剤層の糊はみ出しが生じるのを抑制又は防止することができる。その結果、切断面同士が再付着(ブロッキング)することを抑制又は防止することができ、後述のピックアップを一層良好に行うことができる。
ダイシングテープ一体型半導体裏面用フィルム1に接着固定された半導体チップ5を回収する為に、図2(c)で示されるように、半導体チップ5のピックアップを行って、半導体チップ5を半導体裏面用フィルム2とともにダイシングテープ3より剥離させる。ピックアップの方法としては特に限定されず、従来公知の種々の方法を採用できる。例えば、個々の半導体チップ5をダイシングテープ一体型半導体裏面用フィルム1の基材31側からニードルによって突き上げ、突き上げられた半導体チップ5をピックアップ装置によってピックアップする方法等が挙げられる。なお、ピックアップされた半導体チップ5は、その裏面が半導体裏面用フィルム2により保護されている。
ピックアップした半導体チップ5は、図2(d)で示されるように、基板等の被着体に、フリップチップボンディング方式(フリップチップ実装方式)により固定させる。具体的には、半導体チップ5を、半導体チップ5の回路面(表面、回路パターン形成面、電極形成面などとも称される)が被着体6と対向する形態で、被着体6に常法に従い固定させる。例えば、半導体チップ5の回路面側に形成されているバンプ51を、被着体6の接続パッドに被着された接合用の導電材(半田など)61に接触させて押圧しながら導電材を溶融させることにより、半導体チップ5と被着体6との電気的導通を確保し、半導体チップ5を被着体6に固定させることができる(フリップチップボンディング工程)。このとき、半導体チップ5と被着体6との間には空隙が形成されており、その空隙間距離は、一般的に30μm〜300μm程度である。尚、半導体チップ5を被着体6上にフリップチップボンディング(フリップチップ接続)した後は、半導体チップ5と被着体6との対向面や間隙を洗浄し、該間隙に封止材(封止樹脂など)を充填させて封止することが重要である。
<フリップチップ型半導体裏面用フィルムの作製>
アクリル酸エチル−メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(商品名「パラクロンW−197CM」根上工業株式会社製):100部に対して、エポキシ樹脂(商品名「エピコート1004」JER株式会社製):113部、フェノール樹脂(商品名「ミレックスXLC−4L」三井化学株式会社製):121部、球状シリカ(商品名「SO−25R」株式会社アドマテックス製):246部、着色剤(商品名「Oil Black 860」オリエント化学工業株式会社製):18部(樹脂組成物100重量部に対する含有量3部)をメチルエチルケトンに溶解して、固形分濃度が23.6重量%となる接着剤組成物の溶液を調製した。
冷却管、窒素導入管、温度計、及び、撹拌装置を備えた反応容器に、アクリル酸2−エチルヘキシル(以下、「2EHA」という。)88.8部、アクリル酸−2−ヒドロキシエチル(以下、「HEA」という。)11.2部、過酸化ベンゾイル0.2部及びトルエン65部を入れ、窒素気流中で61℃にて6時間重合処理をし、重量平均分子量85万のアクリル系ポリマーAを得た。なお、重量平均分子量は、GPC(ゲルパーミェーションクロマトグラフィー)により求めた。
紫外線(UV)照射装置:高圧水銀灯
紫外線照射積算光量:500mJ/cm2
出力:75W
照射強度150mW/cm2
尚、紫外線照射は粘着剤層前駆体に対し直接行った。
上記フリップチップ型半導体裏面用フィルムAを、上記ダイシングテープの粘着剤層上に、ラミネーターを用いて貼り合せ、ダイシングテープ一体型半導体裏面用フィルムを作製した。なお、ラミネーターの条件は下記の通りである。
ラミネーター装置:LPA330/450
ラミネーター温度:40℃
ラミネート速度:1600mm/min
本実施例2においては、上記着色剤を黒色顔料(三菱化学製、#47、添加量:3部(樹脂組成物100重量部に対する含有量0.5部))としたこと以外は、前記実施例1と同様にして、本実施例2に係るダイシングテープ一体型半導体裏面用フィルムを得た。
本比較例1においては、上記着色剤を添加しなかったこと以外は、前記実施例1と同様にして、本比較例1に係るダイシングテープ一体型半導体裏面用フィルムを得た。
本比較例2においては、上記着色剤の含有量を1.8部(樹脂組成物100重量部に対する含有量0.3部)としたこと以外は、前記実施例1と同様にして、本比較例2に係るダイシングテープ一体型半導体裏面用フィルムを得た。
本比較例3においては、上記着色剤の含有量を18部(樹脂組成物100重量部に対する含有量3部)としたこと以外は、前記実施例2と同様にして、本比較例3に係るダイシングテープ一体型半導体裏面用フィルムを得た。
半導体ウエハ(直径8インチ、厚さ0.6mm;シリコンミラーウエハ)を厚さ0.2mmとなるまで、裏面研削した。ダイシングテープ一体型半導体裏面用フィルムからセパレータを剥離した後、上記半導体ウエハを半導体裏面用フィルム上に70℃でロール圧着して貼り合わせた。更に、半導体ウエハのダイシングを行った。ダイシングは10mm角のチップサイズとなる様にフルカットした。なお、半導体ウエハの研削条件、貼り合わせ条件、ダイシング条件は、下記のとおりである。
研削装置:商品名「DFG−8560」ディスコ社製
半導体ウェハ:8インチ径(厚さ0.6mmから0.2mmに裏面研削)
[貼り合わせ条件]
貼り付け装置:商品名「MA−3000III」日東精機株式会社製
貼り付け速度計:10mm/min
貼り付け圧力:0.15MPa
貼り付け時のステージ温度:70℃
[ダイシング条件]
ダイシング装置:商品名「DFD−6361」ディスコ社製
ダイシングリング:「2−8−1」(ディスコ社製)
ダイシング速度:30mm/sec
ダイシングブレード:
Z1;ディスコ社製「203O−SE 27HCDD」
Z2;ディスコ社製「203O−SE 27HCBB」
ダイシングブレード回転数:
Z1;40,000rpm
Z2;45,000rpm
カット方式:ステップカット
ウェハチップサイズ:10.0mm角
ピックアップ装置:商品名「SPA−300」株式会社新川社製
ピックアップニードル本数:9本
ニードル突き上げ速度:20mm/s
ニードル突き上げ量 : 500μm
ピックアップ時間:1秒
ダイシングテープ エキスパンド量 : 3mm
実施例、及び、比較例で作製したフリップチップ型半導体裏面用フィルム(厚さ:20μm)を分光光度計(島津製作所社製の分光光度計「ABSORPTION SPECTRO PHOTOMETR」)を用いて測定し、波長532nm及び1064nmでのフリップチップ型半導体裏面用フィルムの光線透過率(%)を求めた。
結果を表1に示す。
実施例、及び、比較例で作製したフリップチップ型半導体裏面用フィルム(厚さ:20μm)に、以下の条件により、文字及び二次元コードの加工を行った。
[レーザーマーキング条件]
レーザーマーキング装置:商品名「MD−S9900」、キーエンス社製
波長:532nm
強度:1.0W
スキャンスピード:700mm/sec
Qスイッチ周波数:64kHz
全体のサイズとして約4mm×約4mmで、各セルのサイズが0.08mm×0.24mmの二次元コードを加工した。なお、文字としては、特に制限されない。
以下の条件により、レーザーマーキング後のマーキング部の明度及び非マーキング部の明度を測定した。
[明度測定条件]
画像処理装置:商品名「CV−5000」、キーエンス社製
光量:30%
[(マーキング部の明度−非マーキング部の明度)/マーキング部の明度]×100(%)
結果を表1に示す。
レーザーマーキングにより形成された文字が目視(目視距離:約40cm)にて視認でき、且つ、二次元コードリーダ(キーエンス社製、製品名「SR−600」、読み取り時の二次元コードと二次元コードリーダとの距離:10cm以下)にて読み取り可能なものを○とし、レーザーマーキングにより形成された文字が目視にて視認できない、又は、二次元コードリーダにて読み取り不可能なものを×とした。
結果を表1に示す。
コントラストを測定し、リフロー工程後のコントラストの低下率(%)を、下記の式により求めた。
(A−B)/A×100
ここで、Aは、レーザーマーキングした後に行われるリフロー工程前におけるマーキング部と非マーキング部とのコントラストを示す。Bは、レーザーマーキングした後に行われるリフロー工程後におけるマーキング部と非マーキング部とのコントラストを示す。
より求められる値
結果を表1に示す。
<ウエハ接着層の作製>
アクリル酸エチル−メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(商品名「パラクロンW−197CM」根上工業株式会社製):100部に対して、エポキシ樹脂(商品名「エピコート1004」JER株式会社製):21部、フェノール樹脂(商品名「ミレックスXLC−4L」三井化学株式会社製):22部、球状シリカ(商品名「SO−25R」株式会社アドマテックス製):77部をメチルエチルケトンに溶解して、固形分濃度が23.6重量%となる接着剤組成物の溶液を調製した。
アクリル酸エチル−メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(商品名「パラクロンW−197CM」根上工業株式会社製):100部に対して、エポキシ樹脂(商品名「エピコート1004」JER株式会社製):113部、フェノール樹脂(商品名「ミレックスXLC−4L」三井化学株式会社製):121部、球状シリカ(商品名「SO−25R」株式会社アドマテックス製):246部、着色剤としての染料1(商品名「OIL GREEN 502」オリエント化学工業株式会社製):10部、着色剤としての染料2(商品名「OIL BLACK BS」オリエント化学工業株式会社製):10部(樹脂組成物100重量部に対する染料1と染料2との合計含有量3.3部)をメチルエチルケトンに溶解して、固形分濃度が23.6重量%となる接着剤組成物の溶液を調製した。
前記のウエハ接着層からなるフィルムA(厚さ:10μm)、及び、前記のレーザーマーク層フィルムB(厚さ:10μm)を分光光度計(島津製作所社製の分光光度計「UV−2550」)を用いて測定し、波長532nm及び1064nmでのフィルムA、及び、フィルムBの光線透過率(%)を求めたところ、以下のようになった。
フィルムA:波長532nmでの光線透過率40%
波長1064nmでの光線透過率80%
フィルムB:波長532nmでの光線透過率1%以下
波長1064nmでの光線透過率1%以下
ダイシングテープ(商品名「V−8−T」日東電工株式会社製;基材の平均厚さ:65μm、粘着剤層の平均厚さ:10μm)の粘着剤層上に、前記フィルムA及び前記フィルムBを、フィルムB(レーザーマーク層からなるフィルムB)がダイシングテープの粘着剤層に接触するように、ハンドローラーを用いて貼り合せ、ダイシングテープ一体型半導体裏面用フィルムを作製した。
結果を表2に示す。
表1及び表2から分かる通り、実施例1〜3の様に、波長532nm及び1064nmにおける光線透過率が0〜20%であり、コントラストが20%以上の半導体裏面用フィルムであると、レーザーマーキングされた文字及び二次元コードの視認性が良好であった。
2 半導体裏面用フィルム
3 ダイシングテープ
31 基材
32 粘着剤層
33 半導体ウエハの貼着部分に対応する部分
4 半導体ウエハ
5 半導体チップ
51 半導体チップ5の回路面側に形成されているバンプ
6 被着体
61 被着体6の接続パッドに被着された接合用の導電材
Claims (7)
- 被着体上にフリップチップ接続された半導体素子の裏面に形成するためのフリップチップ型半導体裏面用フィルムであって、
波長532nm又は1064nmにおける光線透過率が20%以下であり、
レーザーマーキングした後のマーキング部とマーキング部以外とのコントラストが20%以上であることを特徴とするフリップチップ型半導体裏面用フィルム。 - 前記フリップチップ型半導体裏面用フィルムは、樹脂組成物100重量部に対して0.01〜10重量部の着色剤を含有することを特徴とする請求項1に記載のフリップチップ型半導体裏面用フィルム。
- レーザーマーキングした後に行われるリフロー工程後のコントラストの低下率が20%以下であることを特徴とする請求項1又は2に記載のフリップチップ型半導体裏面用フィルム。
- 請求項1〜3のいずれか1に記載のフリップチップ型半導体裏面用フィルムが、ダイシングテープ上に積層されたダイシングテープ一体型半導体裏面用フィルムであって、
前記ダイシングテープは基材上に粘着剤層が積層された構造であり、
前記フリップチップ型半導体裏面用フィルムは前記ダイシングテープの粘着剤層上に積層されていることを特徴とするダイシングテープ一体型半導体裏面用フィルム。 - 請求項4に記載のダイシングテープ一体型半導体裏面用フィルムを用いた半導体装置の製造方法であって、
前記ダイシングテープ一体型半導体裏面用フィルムにおけるフリップチップ型半導体裏面用フィルム上に半導体ウエハを貼着する工程と、
前記半導体ウエハをダイシングして半導体素子を形成する工程と、
前記半導体素子を前記フリップチップ型半導体裏面用フィルムとともに、ダイシングテープの粘着剤層から剥離する工程と、
前記半導体素子を前記被着体上にフリップチップ接続する工程とを具備することを特徴とする半導体装置の製造方法。 - フリップチップ接続する工程の後、前記フリップチップ型半導体裏面用フィルムに、レーザーマーキングを行う工程を具備する請求項5に記載の半導体装置の製造方法。
- 請求項5又は6のいずれか1に記載の半導体装置の製造方法により製造されたものであることを特徴とするフリップチップ型半導体装置。
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KR101606224B1 (ko) | 2016-03-24 |
KR101647260B1 (ko) | 2016-08-09 |
TW201204805A (en) | 2012-02-01 |
CN102376616B (zh) | 2016-10-05 |
KR20120011802A (ko) | 2012-02-08 |
US8492907B2 (en) | 2013-07-23 |
JP5249290B2 (ja) | 2013-07-31 |
TWI445798B (zh) | 2014-07-21 |
US20120018903A1 (en) | 2012-01-26 |
KR20150118063A (ko) | 2015-10-21 |
CN102376616A (zh) | 2012-03-14 |
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