JP2012023347A - 光電変換装置及びその作製方法 - Google Patents
光電変換装置及びその作製方法 Download PDFInfo
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- JP2012023347A JP2012023347A JP2011132789A JP2011132789A JP2012023347A JP 2012023347 A JP2012023347 A JP 2012023347A JP 2011132789 A JP2011132789 A JP 2011132789A JP 2011132789 A JP2011132789 A JP 2011132789A JP 2012023347 A JP2012023347 A JP 2012023347A
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
- H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
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- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
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Abstract
【解決手段】第1の電極上に積層された第1の導電型である結晶性半導体領域、真性である結晶性半導体領域、真性である半導体領域、及び第2の導電型である半導体領域を有し、第1の電極及び第1の導電型である結晶性半導体領域の界面が平坦であり、真性である結晶性半導体領域が、結晶性半導体領域、及び当該結晶性半導体領域上に設けられ、結晶性半導体で形成される複数のウィスカーを有する光電変換装置である。即ち、真性である結晶性半導体領域は、複数のウィスカーを有するため、第2の電極の表面が凹凸状である。そして、第1の導電型である結晶性半導体領域から真性である結晶性半導体領域の方向に、第1の導電型を付与する不純物元素の濃度勾配を有している。
【選択図】図1
Description
本実施の形態では、本発明の一態様である光電変換装置の構造について、図1乃至図4を用いて説明する。
本実施の形態では、実施の形態1と比較して、欠陥の少ない光電変換層の作製方法について、説明する。
本実施の形態では、光電変換層を複数積層する、いわゆるタンデム構造の光電変換装置の構造について、図5を用いて説明する。なお、本実施の形態では、二つの光電変換層を積層する場合について説明するが、三つ以上の光電変換層を有する積層構造としてもよい。また、以下においては、光入射側の前方光電変換層をトップセルと、後方光電変換層をボトムセルと呼ぶことがある。
本実施の形態では、光電変換装置の第2の導電型である半導体領域上に湿式法により導電層を形成した例について、図8を用いて説明する。
試料1は、直径φ12mmの円形状に切断された厚さ0.1mmのチタン箔を用いた。
試料1と同様の形状である直径φ12mm及び厚さ0.1mmのチタン箔上に、LPCVD法により、ウィスカー群を有するポリシリコン層を形成した。ここでのポリシリコン層の成膜条件は、圧力13Pa、基板温度600℃に設定した処理室に、流量300sccmのシランを導入し、2時間15分ポリシリコン層を堆積した。
103 電極
104 導電層
105 混合層
106 光電変換層
107 結晶性半導体領域
108 結晶性半導体領域
108a 結晶性半導体領域
108b ウィスカー
109 結晶性半導体領域
109a 結晶性半導体領域
109b ウィスカー
111 半導体領域
113 絶縁層
115 グリッド電極
119 半導体領域
120 光電変換層
121 半導体領域
123 半導体領域
125 半導体領域
213 導電層
Claims (12)
- 導電層上に設けられた第1の導電型である結晶性半導体領域と、
前記第1の導電型である結晶性半導体領域上に設けられ、結晶性半導体で形成された複数のウィスカーを有することにより凹凸表面を有し、前記第1の導電型を付与する不純物元素の濃度勾配を有する結晶性半導体領域と、
前記凹凸表面を有する結晶性半導体領域の該凹凸表面を被覆するように設けられた半導体領域と、
前記凹凸表面を被覆するように設けられた半導体領域上に設けられ、前記第1の導電型とは逆の第2の導電型である結晶性半導体領域と、を有する光電変換装置。 - 電極上に積層された、第1の導電型である結晶性半導体領域、真性である結晶性半導体領域、真性である半導体領域、及び第2の導電型である半導体領域を有し、
前記真性である結晶性半導体領域は、結晶性半導体領域と、前記結晶性半導体領域上に設けられ、結晶性半導体で形成される複数のウィスカーを有し、
前記第2の導電型である半導体領域の表面は凹凸状であり、
前記第1の導電型である結晶性半導体領域から前記真性である結晶性半導体領域の方向に、前記第1の導電型を付与する不純物元素の濃度勾配を有する光電変換装置。 - 電極上に積層された、第1の導電型である結晶性半導体領域、真性である結晶性半導体領域、真性である半導体領域、及び第2の導電型である半導体領域を有し、
前記第1の導電型である結晶性半導体領域は、第1の導電型を付与する不純物元素を有する結晶性半導体領域と、前記結晶性半導体領域上に設けられ、第1の導電型を付与する不純物元素を有する結晶性半導体で形成される複数のウィスカーを有し、
前記第2の導電型である半導体領域の表面は凹凸状であり、
前記第1の導電型である結晶性半導体領域から前記真性である結晶性半導体領域の方向に、前記第1の導電型を付与する不純物元素の濃度勾配を有する光電変換装置。 - 請求項2または請求項3において、前記第1の導電型である結晶性半導体領域は、n型半導体領域及びp型半導体領域の一方であり、前記第2の導電型である半導体領域は、n型半導体領域及びp型半導体領域の他方である光電変換装置。
- 請求項2乃至請求項4のいずれか一項において、前記真性である結晶性半導体領域及び前記真性である半導体領域のバンドギャップが異なる光電変換装置。
- 請求項2乃至請求項5のいずれか一項において、前記ウィスカーの軸の方向は、不揃いである光電変換装置。
- 請求項2乃至請求項5のいずれか一項において、前記ウィスカーの軸の方向は、前記電極の法線方向である光電変換装置。
- 導電層上に、シリコンを含む堆積性ガス及び第1の導電型を付与するガスを原料ガスに用い550℃より高く650℃より低い温度で低圧化学的気相堆積法により、第1の導電型である結晶性半導体領域を形成すると共に、前記導電層及び前記第1の導電型である結晶性半導体領域の間に混合層を形成し、
シリコンを含む堆積性ガスを原料ガスに用い550℃より高く650℃より低い温度で低圧化学的気相堆積法により、前記第1の導電型である結晶性半導体領域上に、結晶性半導体領域及び結晶性半導体で形成される複数のウィスカーを有する真性である結晶性半導体領域を形成するとともに、前記第1の導電型である結晶性半導体領域から前記真性である結晶性半導体領域の方向に、前記第1の導電型を付与する不純物元素を移動させ、
シリコンを含む堆積性ガスを原料ガスに用い550℃以下または650℃以上の温度で低圧化学的気相堆積法により、前記真性である結晶性半導体領域上に真性である半導体領域を形成し、
シリコンを含む堆積性ガス及び第2の導電型を付与するガスを原料ガスに用い550℃以下または650℃以上の温度で低圧化学的気相堆積法により、前記真性である半導体領域上に第2の導電型である半導体領域を形成し、
前記第2の導電型である半導体領域上に電極を形成する光電変換装置の作製方法。 - 導電層上に、シリコンを含む堆積性ガス及び第1の導電型を付与するガスを原料ガスに用い550℃より高く650℃より低い温度で低圧化学的気相堆積法により、結晶性半導体領域及び結晶性半導体で形成される複数のウィスカーを有する第1の導電型である結晶性半導体領域を形成すると共に、前記導電層及び前記第1の導電型である結晶性半導体領域の間に混合層を形成し、
シリコンを含む堆積性ガスを原料ガスに用い550℃より高く650℃より低い温度で低圧化学的気相堆積法により、前記第1の導電型である結晶性半導体領域上に、真性である結晶性半導体領域を形成するとともに、前記第1の導電型である結晶性半導体領域から前記真性である結晶性半導体領域の方向に、前記第1の導電型を付与する不純物元素を移動させ、
シリコンを含む堆積性ガスを原料ガスに用い550℃以下または650℃以上の温度で低圧化学的気相堆積法により、前記真性である結晶性半導体領域上に真性である半導体領域を形成し、
シリコンを含む堆積性ガス及び第2の導電型を付与するガスを原料ガスに用い550℃以下または650℃以上の温度で低圧化学的気相堆積法により、前記真性である半導体領域上に第2の導電型である半導体領域を形成し、
前記第2の導電型である半導体領域上に電極を形成する光電変換装置の作製方法。 - 請求項8または請求項9において、前記シリコンを含む堆積性ガスは、水素化シリコン、フッ化シリコン、または塩化シリコンを用いる光電変換装置の作製方法。
- 請求項8乃至請求項10のいずれか一項において、前記第1の導電型である結晶性半導体領域は、n型半導体領域及びp型半導体領域の一方であり、前記第2の導電型である半導体領域は、n型半導体領域及びp型半導体領域の他方である光電変換装置の作製方法。
- 請求項8乃至請求項11のいずれか一項において、前記第1の導電型を付与するガスは、ジボラン及びホスフィンの一方であり、前記第2の導電型を付与するガスは、ジボラン及びホスフィンの他方である光電変換装置の作製方法。
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US20110308587A1 (en) | 2011-12-22 |
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