JP2012023342A - 光電変換装置及びその作製方法 - Google Patents
光電変換装置及びその作製方法 Download PDFInfo
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- JP2012023342A JP2012023342A JP2011130934A JP2011130934A JP2012023342A JP 2012023342 A JP2012023342 A JP 2012023342A JP 2011130934 A JP2011130934 A JP 2011130934A JP 2011130934 A JP2011130934 A JP 2011130934A JP 2012023342 A JP2012023342 A JP 2012023342A
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- semiconductor region
- crystalline semiconductor
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- photoelectric conversion
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Abstract
【解決手段】半導体基板または半導体膜の表面をエッチングして反射防止構造を形成するのではなく、半導体表面に同種または異種の半導体を成長させて凹凸構造とする。例えば、光電変換装置の光入射面側に、表面に複数の突起部を有する半導体層109を設けることで、表面反射を大幅に低減する。かかる構造は、気相成長法で作製することができるので、半導体を汚染することがない。
【選択図】図1
Description
本実施の形態では、本発明の一態様である光電変換装置の構造について、図1乃至図4を用いて説明する。
本実施の形態では、実施の形態1と比較して、欠陥の少ない光電変換層の作製方法について、説明する。
本実施の形態では、光電変換層を複数積層する、いわゆるタンデム構造の光電変換装置の構造について、図5を用いて説明する。なお、本実施の形態では、二つの光電変換層を積層する場合について説明するが、三つ以上の光電変換層を有する積層構造としてもよい。また、以下においては、光入射側の前方光電変換層をトップセルと、後方光電変換層をボトムセルと呼ぶことがある。
本実施の形態では、光電変換装置の第2の導電型である結晶性半導体領域上に湿式法により導電層を形成した例について、図7を用いて説明する。
102 導電層
103 電極
104 導電層
105 混合層
106 光電変換層
107 結晶性半導体領域
108 結晶性半導体領域
108a 結晶性半導体領域
108b ウィスカー
109 結晶性半導体領域
109a 結晶性半導体領域
109b ウィスカー
111 結晶性半導体領域
113 絶縁層
115 グリッド電極
120 光電変換層
121 半導体領域
123 半導体領域
125 半導体領域
213 導電層
501 破線
502 実線
Claims (21)
- 導電層上に設けられた第1の導電型である結晶性半導体領域と、
前記第1の導電型である結晶性半導体領域上に設けられ、結晶性半導体で形成された複数のウィスカーを有することにより凹凸表面を有する結晶性半導体領域と、
前記凹凸表面を有する結晶性半導体領域の該凹凸表面を被覆するように設けられた第1の導電型とは逆の第2の導電型である結晶性半導体領域と、
を有することを特徴とする光電変換装置。 - 電極上に積層された、第1の導電型である結晶性半導体領域、真性である結晶性半導体領域、及び第2の導電型である結晶性半導体領域を有し、
前記真性である結晶性半導体領域は、結晶性半導体領域と、前記結晶性半導体領域上に設けられ、結晶性半導体で形成される複数のウィスカーを有し、
前記第2の導電型である結晶性半導体領域の表面は凹凸状であることを特徴とする光電変換装置。 - 請求項2において、前記真性である結晶性半導体領域及び前記第2の導電型である結晶性半導体領域の界面は凹凸状であることを特徴とする光電変換装置。
- 導電層上に設けられ、第1の導電型を付与する不純物元素を有する結晶性半導体で形成された複数のウィスカーを有することにより凹凸表面を有する第1の導電型である結晶性半導体領域と、
前記凹凸表面を有する第1の導電型である結晶性半導体領域の該凹凸表面を被覆するように設けられた結晶性半導体領域と、
前記結晶性半導体領域上に設けられた第1の導電型とは逆の第2の導電型である結晶性半導体領域を有することを特徴とする光電変換装置。 - 電極上に積層された第1の導電型である結晶性半導体領域、真性である結晶性半導体領域、及び第2の導電型である結晶性半導体領域を有し、
前記第1の導電型である結晶性半導体領域は、第1の導電型を付与する不純物元素を有する結晶性半導体領域と、前記結晶性半導体領域上に設けられ、第1の導電型を付与する不純物元素を有する結晶性半導体で形成される複数のウィスカーを有し、
前記第2の導電型である結晶性半導体領域の表面は凹凸状であることを特徴とする光電変換装置。 - 請求項5において、前記第1の導電型である結晶性半導体領域及び前記真性である結晶性半導体領域の界面は凹凸状であることを特徴とする光電変換装置。
- 請求項1乃至請求項6のいずれか一項において、前記第1の導電型である結晶性半導体領域は、n型半導体領域及びp型半導体領域の一方であり、前記第2の導電型である結晶性半導体領域は、n型半導体領域及びp型半導体領域の他方であることを特徴とする光電変換装置。
- 電極上に積層された第1の導電型である結晶性半導体領域、真性である結晶性半導体領域、第2の導電型である結晶性半導体領域、第3の導電型である半導体領域、真性である半導体領域、及び第4の導電型である半導体領域を有し、
前記真性である結晶性半導体領域は、結晶性半導体領域と、前記結晶性半導体領域上に設けられ、結晶性半導体で形成される複数のウィスカーを有し、
前記第4の導電型である半導体領域の表面は凹凸状であることを特徴とする光電変換装置。 - 請求項8において、前記真性である結晶性半導体領域及び前記第2の導電型である結晶性半導体領域の界面は凹凸状であることを特徴とする光電変換装置。
- 電極上に積層された第1の導電型である結晶性半導体領域、真性である結晶性半導体領域、第2の導電型である結晶性半導体領域、第3の導電型である半導体領域、真性である半導体領域、及び第4の導電型である半導体領域を有し、
前記第1の導電型である結晶性半導体領域は、第1の導電型を付与する不純物元素を有する結晶性半導体領域と、前記結晶性半導体領域上に設けられ、第1の導電型を付与する不純物元素を有する結晶性半導体で形成される複数のウィスカーを有し、
前記第4の導電型である結晶性半導体領域の表面は凹凸状であることを特徴とする光電変換装置。 - 請求項10において、前記第1の導電型である結晶性半導体領域及び前記真性である結晶性半導体領域の界面は凹凸状であることを特徴とする光電変換装置。
- 請求項10乃至請求項12のいずれか一項において、前記第1の導電型である結晶性半導体領域及び第3の導電型である半導体領域は、n型半導体領域及びp型半導体領域の一方であり、前記第2の導電型である結晶性半導体領域及び第4の導電型である半導体領域は、n型半導体領域及びp型半導体領域の他方であることを特徴とする光電変換装置。
- 請求項10乃至請求項12のいずれか一項において、前記真性である結晶性半導体領域及び前記真性である半導体領域のバンドギャップが異なることを特徴とする光電変換装置。
- 請求項1乃至請求項13のいずれか一項において、前記ウィスカーの軸の方向は、不揃いであることを特徴とする光電変換装置。
- 請求項1乃至請求項14のいずれか一項において、前記ウィスカーの軸の方向は、前記電極の法線方向であることを特徴とする光電変換装置。
- 導電層上に、シリコンを含む堆積性ガス及び第1の導電型を付与するガスを原料ガスに用いた減圧CVD法により、第1の導電型である結晶性半導体領域を形成し、
シリコンを含む堆積性ガスを原料ガスに用いた減圧CVD法により、前記第1の導電型である結晶性半導体領域上に、結晶性半導体領域及び結晶性半導体で形成される複数のウィスカーを有する真性である結晶性半導体領域を形成し、
シリコンを含む堆積性ガス及び第2の導電型を付与するガスを原料ガスに用いた減圧CVD法により、前記真性である結晶性半導体領域上に第2の導電型である結晶性半導体領域を形成することを特徴とする光電変換装置の作製方法。 - 導電層上に、シリコンを含む堆積性ガス及び第1の導電型を付与するガスを原料ガスに用いた減圧CVD法により、結晶性半導体領域及び結晶性半導体で形成される複数のウィスカーを有する第1の導電型である結晶性半導体領域を形成し、
シリコンを含む堆積性ガスを原料ガスに用いた減圧CVD法により、前記第1の導電型である結晶性半導体領域上に、真性である結晶性半導体領域を形成し、
シリコンを含む堆積性ガス及び第2の導電型を付与するガスを原料ガスに用いた減圧CVD法により、前記真性である結晶性半導体領域上に第2の導電型である結晶性半導体領域を形成することを特徴とする光電変換装置の作製方法。 - 請求項16または請求項17において、前記減圧CVD法は550度より高い温度で行うことを特徴とする光電変換装置の作製方法。
- 請求項16乃至請求項18のいずれか一項において、前記シリコンを含む堆積性ガスは、水素化シリコン、フッ化シリコン、または塩化シリコンを用いることを特徴とする光電変換装置の作製方法。
- 請求項16乃至請求項19のいずれか一項において、前記第1の導電型である結晶性半導体領域は、n型半導体領域及びp型半導体領域の一方であり、前記第2の導電型である結晶性半導体領域は、n型半導体領域及びp型半導体領域の他方であることを特徴とする光電変換装置の作製方法。
- 請求項16乃至請求項20のいずれか一項において、前記第1の導電型を付与するガスは、ジボラン及びホスフィンの一方であり、前記第2の導電型を付与するガスは、ジボラン及びホスフィンの他方であることを特徴とする光電変換装置の作製方法。
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2011
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- 2011-06-14 US US13/159,876 patent/US20110308600A1/en not_active Abandoned
- 2011-06-14 TW TW100120711A patent/TW201205839A/zh unknown
- 2011-06-16 KR KR1020110058279A patent/KR101771410B1/ko active IP Right Grant
Patent Citations (4)
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JPS5331987A (en) * | 1976-09-03 | 1978-03-25 | Siemens Ag | Solar battery and method of producing same |
JPH04296060A (ja) * | 1991-03-26 | 1992-10-20 | Hitachi Ltd | 太陽電池 |
JP2005109461A (ja) * | 2003-09-12 | 2005-04-21 | Sanyo Electric Co Ltd | 光起電力装置 |
JP2006222272A (ja) * | 2005-02-10 | 2006-08-24 | Sanyo Electric Co Ltd | 光起電力装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014208830A1 (ko) * | 2013-06-28 | 2014-12-31 | 군산대학교산학협력단 | 태양전지 및 그 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
US20110308600A1 (en) | 2011-12-22 |
KR20110138172A (ko) | 2011-12-26 |
TW201205839A (en) | 2012-02-01 |
KR101771410B1 (ko) | 2017-08-25 |
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