JP5656330B2 - 光電変換装置の作製方法 - Google Patents
光電変換装置の作製方法 Download PDFInfo
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- JP5656330B2 JP5656330B2 JP2011132818A JP2011132818A JP5656330B2 JP 5656330 B2 JP5656330 B2 JP 5656330B2 JP 2011132818 A JP2011132818 A JP 2011132818A JP 2011132818 A JP2011132818 A JP 2011132818A JP 5656330 B2 JP5656330 B2 JP 5656330B2
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- semiconductor region
- crystalline semiconductor
- conductivity type
- photoelectric conversion
- intrinsic
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
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Description
本実施の形態では、本発明の一態様である光電変換装置の構造について、図1乃至図4を用いて説明する。
本実施の形態では、実施の形態1と比較して、欠陥の少ない光電変換層の作製方法について、説明する。
本実施の形態では、光電変換層を複数積層する、いわゆるタンデム構造の光電変換装置の構造について、図5を用いて説明する。なお、本実施の形態では、二つの光電変換層を積層する場合について説明するが、三つ以上の光電変換層を有する積層構造としてもよい。また、以下においては、光入射側の前方光電変換層をトップセルと、後方光電変換層をボトムセルと呼ぶことがある。
本実施の形態では、光電変換装置の第2の導電型である半導体領域上に湿式法により導電層を形成した例について、図8を用いて説明する。
試料1は、直径φ12mmの円形状に切断された厚さ0.1mmのチタン箔を用いた。
試料1と同様の形状である直径φ12mm及び厚さ0.1mmのチタン箔上に、LPCVD法により、ウィスカー群を有するポリシリコン層を形成した。ここでのポリシリコン層の成膜条件は、圧力13Pa、基板温度600℃に設定した処理室に、流量300sccmのシランを導入し、2時間15分ポリシリコン層を堆積した。
103 電極
104 導電層
105 混合層
106 光電変換層
107 結晶性半導体領域
108 結晶性半導体領域
108a 結晶性半導体領域
108b ウィスカー
109 結晶性半導体領域
109a 結晶性半導体領域
109b ウィスカー
111 結晶性半導体領域
113 絶縁層
115 グリッド電極
120 光電変換層
121 半導体領域
123 半導体領域
125 半導体領域
213 導電層
501 破線
502 実線
Claims (2)
- 導電層上に、低圧化学的気相堆積法により、第1の導電型を付与する不純物元素を含む第1の半導体領域を形成し、
前記第1の半導体領域上に、低圧化学的気相堆積法により、第2の半導体領域を形成するとともに、前記第1の半導体領域から前記第2の半導体領域の方向に、前記第1の導電型を付与する不純物元素を移動させ、
前記第2の半導体領域上に、低圧化学的気相堆積法により、第2の導電型を付与する不純物元素を含む第3の半導体領域を形成し、
前記第1の半導体領域の形成は、シリコンを含む堆積性ガス及び前記第1の導電型を付与する不純物元素を含むガスを原料ガスに用いて行い、
前記第1の半導体領域の形成は、550℃より高く650℃より低い温度で行い、
前記第2の半導体領域の形成は、シリコンを含む堆積性ガスを原料ガスに用いて行い、
前記第2の半導体領域の形成は、550℃より高く650℃より低い温度で行い、
前記第3の半導体領域の形成は、シリコンを含む堆積性ガス及び前記第2の導電型を付与する不純物元素を含むガスを原料ガスに用いて行い、
前記第3の半導体領域の形成は、550℃以下または650℃以上の温度で行い、
前記第1の半導体領域は、結晶性を有し、
前記第2の半導体領域は、結晶性を有し、
前記第2の半導体領域は、複数の突起を有することを特徴とする光電変換装置の作製方法。 - 導電層上に、低圧化学的気相堆積法により、第1の導電型を付与する不純物元素を含む第1の半導体領域を形成し、
前記第1の半導体領域上に、低圧化学的気相堆積法により、第2の半導体領域を形成するとともに、前記第1の半導体領域から前記第2の半導体領域の方向に、前記第1の導電型を付与する不純物元素を移動させ、
前記第2の半導体領域上に、低圧化学的気相堆積法により、第2の導電型を付与する不純物元素を含む第3の半導体領域を形成し、
前記第1の半導体領域の形成は、シリコンを含む堆積性ガス及び前記第1の導電型を付与する不純物元素を含むガスを原料ガスに用いて行い、
前記第1の半導体領域の形成は、550℃より高く650℃より低い温度で行い、
前記第2の半導体領域の形成は、シリコンを含む堆積性ガスを原料ガスに用いて行い、
前記第2の半導体領域の形成は、550℃より高く650℃より低い温度で行い、
前記第3の半導体領域の形成は、シリコンを含む堆積性ガス及び前記第2の導電型を付与する不純物元素を含むガスを原料ガスに用いて行い、
前記第3の半導体領域の形成は、550℃以下または650℃以上の温度で行い、
前記第1の半導体領域は、結晶性を有し、
前記第2の半導体領域は、結晶性を有し、
前記第1の半導体領域は、複数の突起を有することを特徴とする光電変換装置の作製方法。
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