JP2012009432A - 蓄電装置及びその作製方法 - Google Patents
蓄電装置及びその作製方法 Download PDFInfo
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- JP2012009432A JP2012009432A JP2011117708A JP2011117708A JP2012009432A JP 2012009432 A JP2012009432 A JP 2012009432A JP 2011117708 A JP2011117708 A JP 2011117708A JP 2011117708 A JP2011117708 A JP 2011117708A JP 2012009432 A JP2012009432 A JP 2012009432A
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- 238000003860 storage Methods 0.000 title claims abstract description 60
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
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- 238000000034 method Methods 0.000 claims abstract description 42
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- 239000010703 silicon Substances 0.000 claims abstract description 23
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
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- 238000005229 chemical vapour deposition Methods 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
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- 239000011733 molybdenum Substances 0.000 claims description 6
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- 239000010955 niobium Substances 0.000 claims description 6
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- 239000011651 chromium Substances 0.000 claims description 5
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- 239000000126 substance Substances 0.000 claims description 5
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- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910001423 beryllium ion Inorganic materials 0.000 description 2
- PWOSZCQLSAMRQW-UHFFFAOYSA-N beryllium(2+) Chemical compound [Be+2] PWOSZCQLSAMRQW-UHFFFAOYSA-N 0.000 description 2
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- 229910052791 calcium Inorganic materials 0.000 description 2
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- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 150000002642 lithium compounds Chemical class 0.000 description 2
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- 229910052754 neon Inorganic materials 0.000 description 2
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- 229940078494 nickel acetate Drugs 0.000 description 2
- 229910000484 niobium oxide Inorganic materials 0.000 description 2
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- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 2
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- 229910015645 LiMn Inorganic materials 0.000 description 1
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- 229910013290 LiNiO 2 Inorganic materials 0.000 description 1
- 229910013086 LiNiPO Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
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- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
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- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
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- 229910045601 alloy Inorganic materials 0.000 description 1
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- 150000001450 anions Chemical class 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 159000000009 barium salts Chemical class 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
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- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
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- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
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- 239000007788 liquid Substances 0.000 description 1
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- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 1
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- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
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- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
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- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
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- 238000007740 vapor deposition Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/139—Processes of manufacture
- H01M4/1395—Processes of manufacture of electrodes based on metals, Si or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/04—Processes of manufacture in general
-
- C—CHEMISTRY; METALLURGY
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Abstract
【解決手段】集電体上に、金属元素を分散させ、該金属元素が分散された集電体表面に、シリコンを含む堆積性ガスを用いて加熱する低圧化学蒸着法により、ウィスカーを含む結晶性シリコン層を活物質層として形成する蓄電装置の作製方法である。活物質層中にウィスカーを含むことで、活物質層の表面積が増大するため、蓄電装置の放電容量を高めることができる。
【選択図】図1
Description
本実施の形態では、本発明の一態様である蓄電装置の電極及びその作製方法について、図1及び図2を用いて説明する。
本実験例では、金属元素を分散させた領域上に、LPCVD法を用いてシリコン層を成膜した場合のシリコンウィスカーの成長について説明する。
本実施の形態では、蓄電装置の構造について、図3を用いて説明する。
本実施の形態では、実施の形態2で説明した蓄電装置の応用形態について図4を用いて説明する。
本実施の形態では、実施の形態1で示した放電容量の高い蓄電装置の電極の応用形態について図5を用いて説明する。
本実施の形態では、本発明の一態様に係る放電容量の高い蓄電装置を、無線給電システム(以下、RF給電システムと呼ぶ。)の二次電池に用いた場合の一例を、図6及び図7のブロック図を用いて説明する。なお、各ブロック図では、受電装置および給電装置内の構成要素を機能ごとに分類し、互いに独立したブロックとして示しているが、実際の構成要素は機能ごとに完全に切り分けることが困難であり、一つの構成要素が複数の機能に係わることもあり得る。
102 金属元素を分散させた領域
103 活物質層
103a 結晶性シリコン領域
103b 結晶性シリコン領域
103d 領域
105 領域
107 混合層
109 金属酸化物層
111 集電体
113a ウィスカー
113b ウィスカー
115 基板
151 蓄電装置
153 外装部材
155 蓄電セル
157 端子部
159 端子部
163 負極
165 正極
167 セパレータ
169 電解質
171 負極集電体
173 負極活物質層
175 正極集電体
177 正極活物質層
200 負極集電体
202 負極活物質層
204 負極
206 筐体
210 セパレータ
220 リング状絶縁体
232 正極
240 スペーサー
242 ワッシャー
244 筐体
501 車椅子
503 座部
505 背もたれ
507 フットレスト
509 アームレスト
511 ハンドル
513 コントローラ
515 フレーム
517 前輪
519 後輪
521 駆動部
523 制御部
600 受電装置
601 受電装置部
602 受電装置用アンテナ回路
603 信号処理回路
604 電池
605 整流回路
606 変調回路
607 電源回路
610 電源負荷部
700 給電装置
701 給電装置用アンテナ回路
702 信号処理回路
703 整流回路
704 変調回路
705 復調回路
706 発振回路
Claims (8)
- 集電体上に、金属元素を分散させ、
前記金属元素が分散された前記集電体表面に、シリコンを含む堆積性ガスを原料ガスに用い、低圧化学蒸着法によりウィスカーを含む結晶性シリコン層を活物質層として形成する蓄電装置の作製方法。 - 前記低圧化学蒸着法は、580℃より高い温度で行う請求項1に記載の蓄電装置の作製方法。
- 前記シリコンを含む堆積性ガスとして、水素化シリコン、フッ化シリコン、または塩化シリコンを用いる請求項1または2に記載の蓄電装置の作製方法。
- 前記集電体は、箔状、板状、または網状である請求項1乃至3のいずれか一に記載の蓄電装置の作製方法。
- 基板上に前記集電体を、スパッタリング法または化学蒸着法により形成する請求項1乃至4のいずれか一に記載の蓄電装置の作製方法。
- 前記金属元素の分散は、1000ppm以上の前記金属元素を含む薬液を塗布することにより行う請求項1乃至5のいずれか一に記載の蓄電装置の作製方法。
- 前記金属元素は、シリサイドを形成する元素である請求項1乃至6のいずれか一に記載の蓄電装置の作製方法。
- 前記金属元素は、ジルコニウム、チタン、ハフニウム、バナジウム、ニオブ、タンタル、クロム、モリブデン、タングステン、コバルト、及びニッケルのいずれか一または複数である請求項7に記載の蓄電装置の作製方法。
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JP6035054B2 (ja) | 2011-06-24 | 2016-11-30 | 株式会社半導体エネルギー研究所 | 蓄電装置の電極の作製方法 |
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TWI517486B (zh) | 2016-01-11 |
KR20110131095A (ko) | 2011-12-06 |
KR101838627B1 (ko) | 2018-03-14 |
TW201222948A (en) | 2012-06-01 |
JP5883971B2 (ja) | 2016-03-15 |
JP2015159121A (ja) | 2015-09-03 |
US9136530B2 (en) | 2015-09-15 |
US20110289767A1 (en) | 2011-12-01 |
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