JP2012001432A - 大領域窒化物結晶およびその作製方法 - Google Patents
大領域窒化物結晶およびその作製方法 Download PDFInfo
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- JP2012001432A JP2012001432A JP2011134782A JP2011134782A JP2012001432A JP 2012001432 A JP2012001432 A JP 2012001432A JP 2011134782 A JP2011134782 A JP 2011134782A JP 2011134782 A JP2011134782 A JP 2011134782A JP 2012001432 A JP2012001432 A JP 2012001432A
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- 239000013078 crystal Substances 0.000 title claims abstract description 342
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 222
- 238000000034 method Methods 0.000 title claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 105
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 12
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 28
- 229910002601 GaN Inorganic materials 0.000 claims description 27
- 239000012790 adhesive layer Substances 0.000 claims description 18
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 10
- 229910052732 germanium Inorganic materials 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 7
- 239000011787 zinc oxide Substances 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 229910052745 lead Inorganic materials 0.000 claims description 5
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- 239000010980 sapphire Substances 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 239000011701 zinc Substances 0.000 claims description 5
- -1 CdZeTe Inorganic materials 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910003460 diamond Inorganic materials 0.000 claims description 4
- 239000010432 diamond Substances 0.000 claims description 4
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- 238000005468 ion implantation Methods 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
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- 229910005540 GaP Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
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- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052700 potassium Inorganic materials 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
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- 229910017115 AlSb Inorganic materials 0.000 claims description 2
- 229910004613 CdTe Inorganic materials 0.000 claims description 2
- 229910005542 GaSb Inorganic materials 0.000 claims description 2
- 229910005793 GeO 2 Inorganic materials 0.000 claims description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 2
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims description 2
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- 229910004541 SiN Inorganic materials 0.000 claims description 2
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 claims description 2
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- 229910052792 caesium Inorganic materials 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052744 lithium Inorganic materials 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 229910003465 moissanite Inorganic materials 0.000 claims description 2
- 229910052863 mullite Inorganic materials 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052701 rubidium Inorganic materials 0.000 claims description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 239000011029 spinel Substances 0.000 claims description 2
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 229910052984 zinc sulfide Inorganic materials 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
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- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
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- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 239000013598 vector Substances 0.000 description 4
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- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052761 rare earth metal Inorganic materials 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
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- 238000002207 thermal evaporation Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 229910002651 NO3 Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910001854 alkali hydroxide Inorganic materials 0.000 description 2
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- HJMZMZRCABDKKV-UHFFFAOYSA-N carbonocyanidic acid Chemical compound OC(=O)C#N HJMZMZRCABDKKV-UHFFFAOYSA-N 0.000 description 2
- 239000004568 cement Substances 0.000 description 2
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- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
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- 229910052709 silver Inorganic materials 0.000 description 2
- 229910052950 sphalerite Inorganic materials 0.000 description 2
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical group [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 2
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- 238000001429 visible spectrum Methods 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
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- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
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- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- CEKJAYFBQARQNG-UHFFFAOYSA-N cadmium zinc Chemical compound [Zn].[Cd] CEKJAYFBQARQNG-UHFFFAOYSA-N 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
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- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
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- 230000009477 glass transition Effects 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 description 1
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- 229910052703 rhodium Inorganic materials 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
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- C—CHEMISTRY; METALLURGY
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Abstract
【解決手段】転位密度が約107cm−2よりも低い少なくとも2つの結晶201、202を提供する工程と、ハンドル基板を提供する工程と、少なくとも2つの結晶201、202をハンドル基板に対してウェーハ接合する工程と、少なくとも2つの結晶201,202を成長させて、溶合結晶として合体させる工程と、を含み、第1の結晶201と第2の結晶202との間の極性配向不整角度γは、0.5度未満であり、方位配向不整角度αおよびβは1度未満である。
【選択図】図2
Description
x1およびy1は、[1−210]および[0001]に沿うように、それぞれ選択され得る。同様に、座標系222(x2、y2、z2)は、第2の窒化物結晶202からの高品質エピタキシャル層の結晶学的配向を示し、ここで、z2は、表面105のノミナル配向に垂直な負の表面であり(図1を参照)、x2およびy2は、z2に直交するベクトルである。ここで、(x2、y2、z2)に対応する結晶学的方向において、(x1、y1、z1)のときと同一の変換を用いる。前記第1の窒化物結晶と前記第2の窒化物結晶との間の結晶学的配向不整は、α、βおよびγの3つの角度によって指定され、ここで、αは、x1とx2との間の角度であり、βは、y1とy2との間の角度であり、γは、z1とz2との間の角度である。前記第1の窒化物結晶および前記第2の窒化物結晶の表面配向はほとんど同一であるため、極性配向不整角度γは極めて小さい(例えば、0.5度未満、0.2度未満、0.1度未満、0.05度未満、0.02度未満、または0.01度未満)。配置時における前記窒化物結晶の配向時において、制御が高精度に行われるため、αとβとの間の配向不整角度は極めて小さい(例えば、1度未満、0.5度未満、0.2度未満、0.1度未満、0.05度未満、0.02度未満、または0.01度未満)。典型的には、γは、αおよびβ以下である。さらなる隣接する窒化物結晶間の結晶学的配向不整も、同様に極めて小さい。
Claims (20)
- 大領域結晶の成長方法であって、
転位密度が約107cm−2よりも低い少なくとも2つの結晶を提供する工程と、
ハンドル基板を提供する工程と、
前記少なくとも2つの結晶を前記ハンドル基板に対してウェーハ接合する工程と、
前記少なくとも2つの結晶を成長させて、溶合結晶として合体させる工程と、
を含み、
前記第1の結晶と前記第2の結晶との間の極性配向不整角度γは、0.5度未満であり、方位配向不整角度αおよびβは1度未満である、ことを特徴とする大領域結晶の成長方法。
- 前記少なくとも2つの結晶は、六角形結晶構造を有する、ことを特徴とする請求項1に記載の大領域結晶の成長方法。
- 前記少なくとも2つの結晶は、立方結晶構造を有する、ことを特徴とする請求項1に記載の大領域結晶の成長方法。
- 前記少なくとも2つの結晶は、立方BN、BP、BA、AlP、AlAs、AlSb、β−SiC、GaP、GaAs、GaSb、InP、InAs、ZnS、ZnSe、CdS、CdSe、CdTe、CdZeTeおよびHgCdTeから選択される、ことを特徴とする請求項3に記載の大領域結晶の成長方法。
- 前記少なくとも2つの結晶は、ZnO、ZnS、AgI、CdS、CdSe、2H−SiC、4H−SiCおよび6H−SiCから選択される、ことを特徴とする請求項2に記載の大領域結晶の成長方法。
- 前記少なくとも2つの結晶は、貫通転位濃度が約106cm−2よりも高い領域を含み、前記領域は、貫通転位濃度が約106cm−2よりも低い領域によって分離される、ことを特徴とする請求項1に記載の大領域結晶の成長方法。
- 前記少なくとも2つの窒化物結晶は、AlxInyGa(1−x−y)Nを含み、ここで、0≦x、y、x+y≦1である、ことを特徴とする請求項2に記載の大領域結晶の成長方法。
- 前記少なくとも2つの結晶の転位密度は、約106cm−2未満である、ことを特徴とする請求項1に記載の大領域結晶の成長方法。
- 前記少なくとも2つの結晶の転位密度は、約104cm−2未満である、ことを特徴とする請求項1に記載の大領域結晶の成長方法。
- 前記2つの結晶のうち少なくとも1つは、イオン注入、あるいは、損傷領域を有する、ことを特徴とする請求項1に記載の大領域結晶の成長方法。
- 前記ハンドル基板にウェーハ接合された前記少なくとも2つの結晶の表面の結晶学的配向は、(0001)、(000−1)、{10−10}、{10−1±1}、{20−21}および{11−22}の1度以内である、ことを特徴とする請求項2に記載の大領域結晶の成長方法。
- 前記ハンドル基板は、サファイア、アルミニウム酸化物、ムライト、ケイ素、ケイ素窒化物、ゲルマニウム、ケイ素ゲルマニウム、ダイヤモンド、ガリウムヒ素、炭化ケイ素、MgAl2O4スピネル、亜鉛酸化物、リン化インジウム、窒化ガリウム、インジウム窒化物、ガリウムアルミニウムインジウム窒化物、およびアルミニウム窒化物から選択される、ことを特徴とする請求項1に記載の大領域結晶の成長方法。
- 前記ハンドル基板はガラスであり、Si、Ge、Sn、Pb、B、Al、Ga、In、Tl、P、As、Sb、Pb、Li、Na、K、Rb、Cs、Mg、Ca、Sr、Ba、Y、Ti、Zr、Hf、Mn、ZnおよびCdを含む材料の少なくとも1つの酸化物を含む、ことを特徴とする請求項1に記載の大領域結晶の成長方法。
- 前記ハンドル基板および前記結晶のうち少なくとも1つは接着層をさらに含み、前記接着層は、SiO2、GeO2、SiNx、AlNx、B、Al、Si、P、Zn、Ga、Ge、Au、Ni、Ti、Cr、Cd、In、Sn、Sb、Tl、またはPb、あるいはその酸化物、窒化物またはオキシ窒化物のうち少なくとも1つを含む、ことを特徴とする請求項1に記載の大領域結晶の成長方法。
- 前記ハンドル基板は、前記少なくとも2つの結晶と実質的に同一の組成を有する、ことを特徴とする請求項1に記載の大領域結晶の成長方法。
- 前記結晶のうち少なくとも1つは、溶合結晶を含む、ことを特徴とする請求項1に記載の大領域結晶の成長方法。
- 前記少なくとも2つの結晶は、ピックアンドプレースマシン、ロボットまたはダイ取付ツールにより、前記ハンドル基板上に配置される、ことを特徴とする請求項1に記載の大領域結晶の成長方法。
- 前記溶合結晶を半導体構造のための基板として用いる工程をさらに含む、ことを特徴とする請求項1に記載の大領域結晶の成長方法。
- 前記半導体構造の活性領域が前記溶合結晶の単一ドメイン内に収まるように、前記半導体構造を配置する工程をさらに含む、ことを特徴とする請求項1に記載の大領域結晶の成長方法。
- 前記溶合結晶をバルク結晶成長のための種晶として用いるさらなる工程を含む、ことを特徴とする請求項1に記載の大領域結晶の成長方法。
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