JP2011523778A - 電気的構成要素アセンブリ - Google Patents

電気的構成要素アセンブリ Download PDF

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Publication number
JP2011523778A
JP2011523778A JP2011509997A JP2011509997A JP2011523778A JP 2011523778 A JP2011523778 A JP 2011523778A JP 2011509997 A JP2011509997 A JP 2011509997A JP 2011509997 A JP2011509997 A JP 2011509997A JP 2011523778 A JP2011523778 A JP 2011523778A
Authority
JP
Japan
Prior art keywords
varistor body
varistor
component assembly
electrical
electrical connection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011509997A
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English (en)
Japanese (ja)
Other versions
JP2011523778A5 (https=
Inventor
ファイヒティンガー、トーマス
エンゲル、ギュンター
ペチナ、アクセル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Electronics AG
Original Assignee
Epcos AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epcos AG filed Critical Epcos AG
Publication of JP2011523778A publication Critical patent/JP2011523778A/ja
Publication of JP2011523778A5 publication Critical patent/JP2011523778A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/12—Overvoltage protection resistors; Arresters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/102—Varistor boundary, e.g. surface layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105—Varistor cores
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5434—Dispositions of bond wires the connected ends being on auxiliary connecting means on bond pads, e.g. on other bond wires

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Thermistors And Varistors (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
JP2011509997A 2008-05-21 2009-05-22 電気的構成要素アセンブリ Pending JP2011523778A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008024479.1 2008-05-21
DE102008024479A DE102008024479A1 (de) 2008-05-21 2008-05-21 Elektrische Bauelementanordnung
PCT/EP2009/056247 WO2009141437A1 (de) 2008-05-21 2009-05-22 Elektrische bauelementanordnung

Publications (2)

Publication Number Publication Date
JP2011523778A true JP2011523778A (ja) 2011-08-18
JP2011523778A5 JP2011523778A5 (https=) 2012-09-20

Family

ID=41010059

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011509997A Pending JP2011523778A (ja) 2008-05-21 2009-05-22 電気的構成要素アセンブリ

Country Status (8)

Country Link
US (1) US9177703B2 (https=)
EP (1) EP2289076B1 (https=)
JP (1) JP2011523778A (https=)
KR (1) KR101666230B1 (https=)
CN (1) CN102160129A (https=)
DE (1) DE102008024479A1 (https=)
TW (1) TWI427761B (https=)
WO (1) WO2009141437A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017524261A (ja) * 2014-08-08 2017-08-24 エプコス アクチエンゲゼルシャフトＥｐｃｏｓ Ａｇ Ｌｅｄ用担体

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008024479A1 (de) * 2008-05-21 2009-12-03 Epcos Ag Elektrische Bauelementanordnung
WO2012035484A1 (en) * 2010-09-15 2012-03-22 Koninklijke Philips Electronics N.V. Embedded transient voltage suppression for light emitting devices
TW201221501A (en) * 2010-11-26 2012-06-01 Sfi Electronics Technology Inc Process for producing ZnO varistor particularly having internal electrode composed of pure silver and sintered at a lower sintering temperature
US20130247777A1 (en) * 2010-12-02 2013-09-26 Nestec S.A. Low-inertia thermal sensor in a beverage machine
DE102012111458B4 (de) * 2012-11-27 2022-12-08 Tdk Electronics Ag Halbleitervorrichtung
DE102012113014A1 (de) * 2012-12-21 2014-06-26 Epcos Ag Bauelementträger und Bauelementträgeranordnung
DE102014020163B4 (de) * 2014-01-29 2025-09-18 Tdk Electronics Ag Chip mit Schutzfunktion und Verfahren zur Herstellung
DE102014101092B4 (de) * 2014-01-29 2024-09-12 Tdk Electronics Ag Chip mit Schutzfunktion und Verfahren zur Herstellung
CN106463221B (zh) * 2014-05-23 2018-01-05 三菱电机株式会社 浪涌吸收元件
DE102016107495B4 (de) * 2016-04-22 2022-04-14 Tdk Electronics Ag Vielschicht-Trägersystem, Verfahren zur Herstellung eines Vielschicht-Trägersystems und Verwendung eines Vielschicht-Trägersystems
CN106124994A (zh) * 2016-06-12 2016-11-16 北京长城华冠汽车科技股份有限公司 一种电动汽车的电池参数检测装置和电动汽车
DE102016122014A1 (de) * 2016-11-16 2018-05-17 Epcos Ag Leistungsmodul mit verringerter Defektanfälligkeit und Verwendung desselben
US10741313B1 (en) * 2019-02-06 2020-08-11 Eaton Intelligent Power Limited Bus bar assembly with integrated surge arrestor

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5753909A (https=) * 1980-09-18 1982-03-31 Tokyo Shibaura Electric Co
JPS6325902A (ja) * 1986-07-17 1988-02-03 株式会社村田製作所 電圧非直線抵抗体用磁器組成物
JPS63296307A (ja) * 1987-05-28 1988-12-02 Matsushita Electric Ind Co Ltd 酸化亜鉛形バリスタの製造方法
JPH0514104A (ja) * 1991-06-27 1993-01-22 Murata Mfg Co Ltd ノイズフイルタ
JP2002110405A (ja) * 2000-09-28 2002-04-12 Kaho Kagi Kofun Yugenkoshi 過電圧保護素子の材料及び製造方法
JP2002329872A (ja) * 2001-04-25 2002-11-15 Kaho Kagi Kofun Yugenkoshi 過渡過電圧保護素子の材料
JP2007088173A (ja) * 2005-09-21 2007-04-05 Tdk Corp 積層型チップバリスタ及び電子機器の製造方法
JP2007103505A (ja) * 2005-09-30 2007-04-19 Tdk Corp 発光装置
JP2007288140A (ja) * 2006-03-20 2007-11-01 Tdk Corp バリスタ素子

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2024999A1 (https=) * 1968-12-02 1970-09-04 Matsushita Electric Industrial Co Ltd
US3928242A (en) * 1973-11-19 1975-12-23 Gen Electric Metal oxide varistor with discrete bodies of metallic material therein and method for the manufacture thereof
US4272411A (en) * 1979-03-08 1981-06-09 Electric Power Research Institute Metal oxide varistor and method
JPS58171478A (ja) 1982-04-02 1983-10-08 Mitsubishi Chem Ind Ltd 石炭液化方法
US4681717A (en) * 1986-02-19 1987-07-21 The United States Of America As Represented By The United States Department Of Energy Process for the chemical preparation of high-field ZnO varistors
JPH07105588B2 (ja) 1988-02-05 1995-11-13 富士通株式会社 加熱チップの位置決め方式
EP0353166A3 (en) * 1988-07-25 1991-04-10 John Fluke Mfg. Co., Inc. Overvoltage protection circuit
EP0408308B1 (en) * 1989-07-11 1994-10-12 Ngk Insulators, Ltd. Process for manufacturing a voltage non-linear resistor and a zinc oxide material to be used therefor
US5712757A (en) * 1996-06-27 1998-01-27 Raychem Corporation Surge arrester having ridged terminals
JPH1197215A (ja) 1997-09-19 1999-04-09 Fujitsu Ltd バリスタおよびバリスタ内蔵電源装置
JP2001167908A (ja) * 1999-12-03 2001-06-22 Tdk Corp 半導体電子部品
JP3822768B2 (ja) 1999-12-03 2006-09-20 株式会社ルネサステクノロジ Ｉｃカードの製造方法
US7132922B2 (en) * 2002-04-08 2006-11-07 Littelfuse, Inc. Direct application voltage variable material, components thereof and devices employing same
JP4292901B2 (ja) * 2002-08-20 2009-07-08 株式会社村田製作所 バリスタ
US7279724B2 (en) * 2004-02-25 2007-10-09 Philips Lumileds Lighting Company, Llc Ceramic substrate for a light emitting diode where the substrate incorporates ESD protection
WO2006106901A1 (ja) * 2005-04-01 2006-10-12 Matsushita Electric Industrial Co., Ltd. Ｌｅｄ部品およびその製造方法
US7671468B2 (en) * 2005-09-30 2010-03-02 Tdk Corporation Light emitting apparatus
JP4600309B2 (ja) 2006-02-13 2010-12-15 Ｔｄｋ株式会社 バリスタ及び発光装置
US7696856B2 (en) 2006-03-20 2010-04-13 Tdk Corporation Varistor element
JP4487963B2 (ja) 2006-03-27 2010-06-23 Ｔｄｋ株式会社 バリスタ及び発光装置
TW200903530A (en) * 2007-03-30 2009-01-16 Tdk Corp Voltage non-linear resistance ceramic composition and voltage non-linear resistance element
WO2009015298A2 (en) * 2007-07-25 2009-01-29 Intermolecular, Inc. Nonvolatile memory elements
US8350252B2 (en) * 2008-03-14 2013-01-08 University Of Connecticut Boundary-modulated nanoparticle junctions and a method for manufacture thereof
US8203421B2 (en) * 2008-04-14 2012-06-19 Shocking Technologies, Inc. Substrate device or package using embedded layer of voltage switchable dielectric material in a vertical switching configuration
DE102008024479A1 (de) * 2008-05-21 2009-12-03 Epcos Ag Elektrische Bauelementanordnung
DE102012104494A1 (de) * 2012-05-24 2013-11-28 Epcos Ag Leuchtdiodenvorrichtung

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5753909A (https=) * 1980-09-18 1982-03-31 Tokyo Shibaura Electric Co
JPS6325902A (ja) * 1986-07-17 1988-02-03 株式会社村田製作所 電圧非直線抵抗体用磁器組成物
JPS63296307A (ja) * 1987-05-28 1988-12-02 Matsushita Electric Ind Co Ltd 酸化亜鉛形バリスタの製造方法
JPH0514104A (ja) * 1991-06-27 1993-01-22 Murata Mfg Co Ltd ノイズフイルタ
JP2002110405A (ja) * 2000-09-28 2002-04-12 Kaho Kagi Kofun Yugenkoshi 過電圧保護素子の材料及び製造方法
JP2002329872A (ja) * 2001-04-25 2002-11-15 Kaho Kagi Kofun Yugenkoshi 過渡過電圧保護素子の材料
JP2007088173A (ja) * 2005-09-21 2007-04-05 Tdk Corp 積層型チップバリスタ及び電子機器の製造方法
JP2007103505A (ja) * 2005-09-30 2007-04-19 Tdk Corp 発光装置
JP2007288140A (ja) * 2006-03-20 2007-11-01 Tdk Corp バリスタ素子

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017524261A (ja) * 2014-08-08 2017-08-24 エプコス アクチエンゲゼルシャフトＥｐｃｏｓ Ａｇ Ｌｅｄ用担体
US9978912B2 (en) 2014-08-08 2018-05-22 Epcos Ag Carrier for an LED

Also Published As

Publication number Publication date
WO2009141437A1 (de) 2009-11-26
KR101666230B1 (ko) 2016-10-13
TWI427761B (zh) 2014-02-21
EP2289076B1 (de) 2016-04-06
US9177703B2 (en) 2015-11-03
EP2289076A1 (de) 2011-03-02
US20110188161A1 (en) 2011-08-04
TW201001668A (en) 2010-01-01
CN102160129A (zh) 2011-08-17
KR20110031163A (ko) 2011-03-24
DE102008024479A1 (de) 2009-12-03

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