KR101666230B1 - 전기 소자 어셈블리 - Google Patents

전기 소자 어셈블리 Download PDF

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Publication number
KR101666230B1
KR101666230B1 KR1020107028773A KR20107028773A KR101666230B1 KR 101666230 B1 KR101666230 B1 KR 101666230B1 KR 1020107028773 A KR1020107028773 A KR 1020107028773A KR 20107028773 A KR20107028773 A KR 20107028773A KR 101666230 B1 KR101666230 B1 KR 101666230B1
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KR
South Korea
Prior art keywords
varistor body
varistor
semiconductor element
electrical connection
housing
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020107028773A
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English (en)
Korean (ko)
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KR20110031163A (ko
Inventor
토마스 페이츠틴거
건터 엥겔
악셀 페시나
Original Assignee
에프코스 아게
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Publication of KR20110031163A publication Critical patent/KR20110031163A/ko
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/12Overvoltage protection resistors; Arresters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/102Varistor boundary, e.g. surface layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105Varistor cores
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/536Shapes of wire connectors the connected ends being ball-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/5363Shapes of wire connectors the connected ends being wedge-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/5434Dispositions of bond wires the connected ends being on auxiliary connecting means on bond pads, e.g. on other bond wires

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Thermistors And Varistors (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
KR1020107028773A 2008-05-21 2009-05-22 전기 소자 어셈블리 Expired - Fee Related KR101666230B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008024479.1 2008-05-21
DE102008024479A DE102008024479A1 (de) 2008-05-21 2008-05-21 Elektrische Bauelementanordnung
PCT/EP2009/056247 WO2009141437A1 (de) 2008-05-21 2009-05-22 Elektrische bauelementanordnung

Publications (2)

Publication Number Publication Date
KR20110031163A KR20110031163A (ko) 2011-03-24
KR101666230B1 true KR101666230B1 (ko) 2016-10-13

Family

ID=41010059

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107028773A Expired - Fee Related KR101666230B1 (ko) 2008-05-21 2009-05-22 전기 소자 어셈블리

Country Status (8)

Country Link
US (1) US9177703B2 (https=)
EP (1) EP2289076B1 (https=)
JP (1) JP2011523778A (https=)
KR (1) KR101666230B1 (https=)
CN (1) CN102160129A (https=)
DE (1) DE102008024479A1 (https=)
TW (1) TWI427761B (https=)
WO (1) WO2009141437A1 (https=)

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DE102008024479A1 (de) * 2008-05-21 2009-12-03 Epcos Ag Elektrische Bauelementanordnung
WO2012035484A1 (en) * 2010-09-15 2012-03-22 Koninklijke Philips Electronics N.V. Embedded transient voltage suppression for light emitting devices
TW201221501A (en) * 2010-11-26 2012-06-01 Sfi Electronics Technology Inc Process for producing ZnO varistor particularly having internal electrode composed of pure silver and sintered at a lower sintering temperature
US20130247777A1 (en) * 2010-12-02 2013-09-26 Nestec S.A. Low-inertia thermal sensor in a beverage machine
DE102012111458B4 (de) * 2012-11-27 2022-12-08 Tdk Electronics Ag Halbleitervorrichtung
DE102012113014A1 (de) * 2012-12-21 2014-06-26 Epcos Ag Bauelementträger und Bauelementträgeranordnung
DE102014020163B4 (de) * 2014-01-29 2025-09-18 Tdk Electronics Ag Chip mit Schutzfunktion und Verfahren zur Herstellung
DE102014101092B4 (de) * 2014-01-29 2024-09-12 Tdk Electronics Ag Chip mit Schutzfunktion und Verfahren zur Herstellung
CN106463221B (zh) * 2014-05-23 2018-01-05 三菱电机株式会社 浪涌吸收元件
DE102014115375A1 (de) * 2014-08-08 2016-02-11 Epcos Ag Träger für eine LED
DE102016107495B4 (de) * 2016-04-22 2022-04-14 Tdk Electronics Ag Vielschicht-Trägersystem, Verfahren zur Herstellung eines Vielschicht-Trägersystems und Verwendung eines Vielschicht-Trägersystems
CN106124994A (zh) * 2016-06-12 2016-11-16 北京长城华冠汽车科技股份有限公司 一种电动汽车的电池参数检测装置和电动汽车
DE102016122014A1 (de) * 2016-11-16 2018-05-17 Epcos Ag Leistungsmodul mit verringerter Defektanfälligkeit und Verwendung desselben
US10741313B1 (en) * 2019-02-06 2020-08-11 Eaton Intelligent Power Limited Bus bar assembly with integrated surge arrestor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002329872A (ja) 2001-04-25 2002-11-15 Kaho Kagi Kofun Yugenkoshi 過渡過電圧保護素子の材料
JP2007288140A (ja) 2006-03-20 2007-11-01 Tdk Corp バリスタ素子
US20080068124A1 (en) 2006-03-20 2008-03-20 Tdk Corporation Varistor element

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FR2024999A1 (https=) * 1968-12-02 1970-09-04 Matsushita Electric Industrial Co Ltd
US3928242A (en) * 1973-11-19 1975-12-23 Gen Electric Metal oxide varistor with discrete bodies of metallic material therein and method for the manufacture thereof
US4272411A (en) * 1979-03-08 1981-06-09 Electric Power Research Institute Metal oxide varistor and method
JPS6329804B2 (https=) 1980-09-18 1988-06-15 Tokyo Shibaura Electric Co
JPS58171478A (ja) 1982-04-02 1983-10-08 Mitsubishi Chem Ind Ltd 石炭液化方法
US4681717A (en) * 1986-02-19 1987-07-21 The United States Of America As Represented By The United States Department Of Energy Process for the chemical preparation of high-field ZnO varistors
JPS6325902A (ja) 1986-07-17 1988-02-03 株式会社村田製作所 電圧非直線抵抗体用磁器組成物
JPS63296307A (ja) 1987-05-28 1988-12-02 Matsushita Electric Ind Co Ltd 酸化亜鉛形バリスタの製造方法
JPH07105588B2 (ja) 1988-02-05 1995-11-13 富士通株式会社 加熱チップの位置決め方式
EP0353166A3 (en) * 1988-07-25 1991-04-10 John Fluke Mfg. Co., Inc. Overvoltage protection circuit
EP0408308B1 (en) * 1989-07-11 1994-10-12 Ngk Insulators, Ltd. Process for manufacturing a voltage non-linear resistor and a zinc oxide material to be used therefor
JPH0514104A (ja) 1991-06-27 1993-01-22 Murata Mfg Co Ltd ノイズフイルタ
US5712757A (en) * 1996-06-27 1998-01-27 Raychem Corporation Surge arrester having ridged terminals
JPH1197215A (ja) 1997-09-19 1999-04-09 Fujitsu Ltd バリスタおよびバリスタ内蔵電源装置
JP2001167908A (ja) * 1999-12-03 2001-06-22 Tdk Corp 半導体電子部品
JP3822768B2 (ja) 1999-12-03 2006-09-20 株式会社ルネサステクノロジ Icカードの製造方法
JP2002110405A (ja) 2000-09-28 2002-04-12 Kaho Kagi Kofun Yugenkoshi 過電圧保護素子の材料及び製造方法
US7132922B2 (en) * 2002-04-08 2006-11-07 Littelfuse, Inc. Direct application voltage variable material, components thereof and devices employing same
JP4292901B2 (ja) * 2002-08-20 2009-07-08 株式会社村田製作所 バリスタ
US7279724B2 (en) * 2004-02-25 2007-10-09 Philips Lumileds Lighting Company, Llc Ceramic substrate for a light emitting diode where the substrate incorporates ESD protection
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JP4134135B2 (ja) * 2005-09-30 2008-08-13 Tdk株式会社 発光装置
US7671468B2 (en) * 2005-09-30 2010-03-02 Tdk Corporation Light emitting apparatus
JP4600309B2 (ja) 2006-02-13 2010-12-15 Tdk株式会社 バリスタ及び発光装置
JP4487963B2 (ja) 2006-03-27 2010-06-23 Tdk株式会社 バリスタ及び発光装置
TW200903530A (en) * 2007-03-30 2009-01-16 Tdk Corp Voltage non-linear resistance ceramic composition and voltage non-linear resistance element
WO2009015298A2 (en) * 2007-07-25 2009-01-29 Intermolecular, Inc. Nonvolatile memory elements
US8350252B2 (en) * 2008-03-14 2013-01-08 University Of Connecticut Boundary-modulated nanoparticle junctions and a method for manufacture thereof
US8203421B2 (en) * 2008-04-14 2012-06-19 Shocking Technologies, Inc. Substrate device or package using embedded layer of voltage switchable dielectric material in a vertical switching configuration
DE102008024479A1 (de) * 2008-05-21 2009-12-03 Epcos Ag Elektrische Bauelementanordnung
DE102012104494A1 (de) * 2012-05-24 2013-11-28 Epcos Ag Leuchtdiodenvorrichtung

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002329872A (ja) 2001-04-25 2002-11-15 Kaho Kagi Kofun Yugenkoshi 過渡過電圧保護素子の材料
JP2007288140A (ja) 2006-03-20 2007-11-01 Tdk Corp バリスタ素子
US20080068124A1 (en) 2006-03-20 2008-03-20 Tdk Corporation Varistor element

Also Published As

Publication number Publication date
WO2009141437A1 (de) 2009-11-26
TWI427761B (zh) 2014-02-21
EP2289076B1 (de) 2016-04-06
US9177703B2 (en) 2015-11-03
EP2289076A1 (de) 2011-03-02
US20110188161A1 (en) 2011-08-04
TW201001668A (en) 2010-01-01
CN102160129A (zh) 2011-08-17
KR20110031163A (ko) 2011-03-24
JP2011523778A (ja) 2011-08-18
DE102008024479A1 (de) 2009-12-03

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