JP2011521463A5 - - Google Patents

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Publication number
JP2011521463A5
JP2011521463A5 JP2011509890A JP2011509890A JP2011521463A5 JP 2011521463 A5 JP2011521463 A5 JP 2011521463A5 JP 2011509890 A JP2011509890 A JP 2011509890A JP 2011509890 A JP2011509890 A JP 2011509890A JP 2011521463 A5 JP2011521463 A5 JP 2011521463A5
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JP
Japan
Prior art keywords
buffer layer
advantageously
layer
stoichiometry
deviation
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JP2011509890A
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English (en)
Japanese (ja)
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JP2011521463A (ja
JP5635497B2 (ja
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Priority claimed from DE102008024230A external-priority patent/DE102008024230A1/de
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Publication of JP2011521463A5 publication Critical patent/JP2011521463A5/ja
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Publication of JP5635497B2 publication Critical patent/JP5635497B2/ja
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JP2011509890A 2008-05-19 2009-05-19 太陽電池用層システム Active JP5635497B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008024230.6 2008-05-19
DE102008024230A DE102008024230A1 (de) 2008-05-19 2008-05-19 Schichtsystem für Solarzellen
PCT/EP2009/003587 WO2009141132A2 (de) 2008-05-19 2009-05-19 Schichtsystem für solarzellen

Publications (3)

Publication Number Publication Date
JP2011521463A JP2011521463A (ja) 2011-07-21
JP2011521463A5 true JP2011521463A5 (enExample) 2014-03-13
JP5635497B2 JP5635497B2 (ja) 2014-12-03

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ID=41212500

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011509890A Active JP5635497B2 (ja) 2008-05-19 2009-05-19 太陽電池用層システム

Country Status (8)

Country Link
US (1) US8962995B2 (enExample)
EP (1) EP2281310B1 (enExample)
JP (1) JP5635497B2 (enExample)
KR (1) KR101335810B1 (enExample)
CN (1) CN102099929B (enExample)
DE (1) DE102008024230A1 (enExample)
ES (1) ES2763159T3 (enExample)
WO (1) WO2009141132A2 (enExample)

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WO2012014967A1 (ja) * 2010-07-28 2012-02-02 京セラ株式会社 光電変換装置とその製造方法および光電変換モジュ－ル
JP5709662B2 (ja) * 2011-06-16 2015-04-30 ソーラーフロンティア株式会社 Ｃｚｔｓ系薄膜太陽電池の製造方法
DE102012205978A1 (de) * 2012-04-12 2013-10-17 Robert Bosch Gmbh Photovoltaische Dünnschichtsolarmodule sowie Verfahren zur Herstellung solcher Dünnschichtsolarmodule
IN2014KN02865A (enExample) 2012-06-20 2015-05-08 Bengbu Design & Res Inst For Glass Industry
CN105144401B (zh) 2012-06-20 2018-02-09 蚌埠玻璃工业设计研究院 具有NaxIn1SyClz缓冲层的薄层太阳能电池的层系统
ES2829970T3 (es) 2012-06-20 2021-06-02 Cnbm Bengbu Design & Res Institute For Glass Industry Co Ltd Sistema de capas para células solares de capa delgada
CN103078013B (zh) * 2013-01-29 2015-05-20 上海交通大学 钒酸铋/铁酸铋异质结薄膜太阳能电池的制备方法
US20140261651A1 (en) * 2013-03-15 2014-09-18 Nanoco Technologies, Ltd. PV Device with Graded Grain Size and S:Se Ratio
JP2014187215A (ja) * 2013-03-23 2014-10-02 Kyocera Corp 光電変換装置
KR102076544B1 (ko) * 2013-05-10 2020-02-12 에스케이이노베이션 주식회사 광흡수층의 제조방법
ES2909538T3 (es) 2013-06-27 2022-05-06 Cnbm Bengbu Design & Res Institute For Glass Industry Co Ltd Sistema de capas para células solares de capa delgada con capa tampón de sulfuro de sodio e indio
EP2887405A1 (de) 2013-12-23 2015-06-24 Saint-Gobain Glass France Schichtsystem für Dünnschichtsolarzellen
US9306098B2 (en) * 2014-01-24 2016-04-05 Tsmc Solar Ltd. Method of making photovoltaic device comprising an absorber having a surface layer
US9240501B2 (en) * 2014-02-12 2016-01-19 Solar Frontier K.K. Compound-based thin film solar cell
EP2947702B1 (de) * 2014-05-21 2019-03-20 AZUR SPACE Solar Power GmbH Solarzellenstapel
EP3238228B1 (en) * 2014-12-22 2019-07-31 Bengbu Design & Research Institute for Glass Industry Method for producing a layer system for thin-film solar cells having a sodium indium sulfide buffer layer
US10121920B2 (en) * 2015-06-30 2018-11-06 International Business Machines Corporation Aluminum-doped zinc oxysulfide emitters for enhancing efficiency of chalcogenide solar cell
TWI620335B (zh) * 2015-08-07 2018-04-01 國立勤益科技大學 薄膜太陽能電池氧化鋅緩衝層結構及製程
CN105261666A (zh) * 2015-10-29 2016-01-20 厦门神科太阳能有限公司 薄膜太阳能电池
CN107690016B (zh) * 2017-10-23 2020-11-17 嘉兴巨腾信息科技有限公司 一种用于手机通讯的保护壳
CN108172665A (zh) * 2017-12-30 2018-06-15 凯盛光伏材料有限公司 一种cigs太阳能电池吸收层表面的处理方法
EP3627564A1 (de) 2018-09-22 2020-03-25 (CNBM) Bengbu Design & Research Institute for Glass Industry Co., Ltd. Verfahren zur nachbehandlung einer absorberschicht
KR102710891B1 (ko) * 2022-04-12 2024-09-30 서울대학교산학협력단 탠덤 태양전지 및 이의 제조방법

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US5141564A (en) * 1988-05-03 1992-08-25 The Boeing Company Mixed ternary heterojunction solar cell
US5286306A (en) * 1992-02-07 1994-02-15 Shalini Menezes Thin film photovoltaic cells from I-III-VI-VII compounds
JP3646940B2 (ja) * 1994-11-01 2005-05-11 松下電器産業株式会社 太陽電池
JPH1074968A (ja) * 1996-09-02 1998-03-17 Nippon Telegr & Teleph Corp <Ntt> 太陽電池およびその製造方法
JP3249408B2 (ja) * 1996-10-25 2002-01-21 昭和シェル石油株式会社 薄膜太陽電池の薄膜光吸収層の製造方法及び製造装置
JP3249407B2 (ja) * 1996-10-25 2002-01-21 昭和シェル石油株式会社 カルコパイライト系多元化合物半導体薄膜光吸収層からなる薄膜太陽電池
JP3527815B2 (ja) * 1996-11-08 2004-05-17 昭和シェル石油株式会社 薄膜太陽電池の透明導電膜の製造方法
JPH1126790A (ja) * 1997-07-04 1999-01-29 Yazaki Corp 半導体薄膜及びその製造方法並びに薄膜太陽電池
JP2004214300A (ja) * 2002-12-27 2004-07-29 National Institute Of Advanced Industrial & Technology ヘテロ接合を有する太陽電池
WO2004090995A1 (ja) * 2003-04-09 2004-10-21 Matsushita Electric Industrial Co., Ltd. 太陽電池
EA010171B1 (ru) * 2003-08-14 2008-06-30 Юниверсити Оф Йоханнесбург Способ получения полупроводниковых плёнок из четырёх и более компонентных сплавов элементов групп ib - iiia - via
US7736940B2 (en) * 2004-03-15 2010-06-15 Solopower, Inc. Technique and apparatus for depositing layers of semiconductors for solar cell and module fabrication
CN101894881A (zh) * 2004-03-15 2010-11-24 索罗能源公司 用于太阳能电池制造的沉积半导体薄层的技术和装置
CN101443929A (zh) * 2004-11-10 2009-05-27 德斯塔尔科技公司 使用含碱层的过程和光电装置
FR2886460B1 (fr) * 2005-05-25 2007-08-24 Electricite De France Sulfurisation et selenisation de couches de cigs electrodepose par recuit thermique
DE102006039331C5 (de) * 2006-08-15 2013-08-22 Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg Photovoltaik-Dünnschichtaufbau und Herstellungsverfahren
US8323735B2 (en) * 2006-10-13 2012-12-04 Solopower, Inc. Method and apparatus to form solar cell absorber layers with planar surface
US8323408B2 (en) * 2007-12-10 2012-12-04 Solopower, Inc. Methods and apparatus to provide group VIA materials to reactors for group IBIIIAVIA film formation

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