JP2011519747A5 - - Google Patents

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Publication number
JP2011519747A5
JP2011519747A5 JP2011508704A JP2011508704A JP2011519747A5 JP 2011519747 A5 JP2011519747 A5 JP 2011519747A5 JP 2011508704 A JP2011508704 A JP 2011508704A JP 2011508704 A JP2011508704 A JP 2011508704A JP 2011519747 A5 JP2011519747 A5 JP 2011519747A5
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JP
Japan
Prior art keywords
substrate processing
processing surface
measurements
uniform
wear
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JP2011508704A
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English (en)
Japanese (ja)
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JP5481472B2 (ja
JP2011519747A (ja
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Priority claimed from PCT/US2009/043288 external-priority patent/WO2009137764A2/en
Publication of JP2011519747A publication Critical patent/JP2011519747A/ja
Publication of JP2011519747A5 publication Critical patent/JP2011519747A5/ja
Application granted granted Critical
Publication of JP5481472B2 publication Critical patent/JP5481472B2/ja
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JP2011508704A 2008-05-08 2009-05-08 Cmpパッド厚みおよびプロファイル監視システム Active JP5481472B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US5163408P 2008-05-08 2008-05-08
US61/051,634 2008-05-08
PCT/US2009/043288 WO2009137764A2 (en) 2008-05-08 2009-05-08 Cmp pad thickness and profile monitoring system

Publications (3)

Publication Number Publication Date
JP2011519747A JP2011519747A (ja) 2011-07-14
JP2011519747A5 true JP2011519747A5 (enExample) 2012-06-21
JP5481472B2 JP5481472B2 (ja) 2014-04-23

Family

ID=41265437

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011508704A Active JP5481472B2 (ja) 2008-05-08 2009-05-08 Cmpパッド厚みおよびプロファイル監視システム

Country Status (4)

Country Link
US (1) US8043870B2 (enExample)
JP (1) JP5481472B2 (enExample)
KR (1) KR101618354B1 (enExample)
WO (1) WO2009137764A2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9138860B2 (en) * 2010-04-20 2015-09-22 Applied Materials, Inc. Closed-loop control for improved polishing pad profiles
JP5699597B2 (ja) * 2010-12-28 2015-04-15 株式会社Sumco 両面研磨装置
US20120270474A1 (en) * 2011-04-20 2012-10-25 Nanya Technology Corporation Polishing pad wear detecting apparatus
US20120270477A1 (en) * 2011-04-22 2012-10-25 Nangoy Roy C Measurement of pad thickness and control of conditioning
JP5896625B2 (ja) 2011-06-02 2016-03-30 株式会社荏原製作所 研磨装置に使用される研磨パッドの研磨面を監視する方法および装置
US20130017762A1 (en) * 2011-07-15 2013-01-17 Infineon Technologies Ag Method and Apparatus for Determining a Measure of a Thickness of a Polishing Pad of a Polishing Machine
JP6091773B2 (ja) * 2012-06-11 2017-03-08 株式会社東芝 半導体装置の製造方法
US20140329439A1 (en) * 2013-05-01 2014-11-06 Applied Materials, Inc. Apparatus and methods for acoustical monitoring and control of through-silicon-via reveal processing
US9312142B2 (en) * 2014-06-10 2016-04-12 Globalfoundries Inc. Chemical mechanical polishing method and apparatus
US9669514B2 (en) * 2015-05-29 2017-06-06 Taiwan Semiconductor Manufacturing Co., Ltd System and method for polishing substrate
TW201819107A (zh) * 2016-08-26 2018-06-01 美商應用材料股份有限公司 用於化學機械研磨的研磨墊厚度監測
US11504821B2 (en) 2017-11-16 2022-11-22 Applied Materials, Inc. Predictive filter for polishing pad wear rate monitoring
US10792783B2 (en) * 2017-11-27 2020-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. System, control method and apparatus for chemical mechanical polishing
US11389928B2 (en) * 2017-11-30 2022-07-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method for conditioning polishing pad
JP7287977B2 (ja) * 2018-03-14 2023-06-06 アプライド マテリアルズ インコーポレイテッド パッドコンディショナカット速度監視
KR102601619B1 (ko) 2018-11-12 2023-11-13 삼성전자주식회사 연마 패드 모니터링 방법 및 연마 패드 모니터링 장치
US11359906B2 (en) * 2020-05-29 2022-06-14 Ta Liang Technology Co., Ltd. Method, system and apparatus for uniformed surface measurement
US11794305B2 (en) 2020-09-28 2023-10-24 Applied Materials, Inc. Platen surface modification and high-performance pad conditioning to improve CMP performance
KR102909307B1 (ko) * 2020-10-26 2026-01-08 주식회사 케이씨텍 연마 패드 모니터링 장치 및 이를 포함하는 기판 연마 시스템
JP7885663B2 (ja) * 2022-11-28 2026-07-07 株式会社Sumco ワークの片面研磨装置、ワークの片面研磨方法、シリコンウェーハの製造方法

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Publication number Priority date Publication date Assignee Title
JP3489272B2 (ja) * 1995-06-16 2004-01-19 ソニー株式会社 研磨装置およびこれを用いた研磨方法
US5875559A (en) * 1995-10-27 1999-03-02 Applied Materials, Inc. Apparatus for measuring the profile of a polishing pad in a chemical mechanical polishing system
JPH1086056A (ja) * 1996-09-11 1998-04-07 Speedfam Co Ltd 研磨パッドの管理方法及び装置
US6045434A (en) * 1997-11-10 2000-04-04 International Business Machines Corporation Method and apparatus of monitoring polishing pad wear during processing
JP3821985B2 (ja) * 1998-05-07 2006-09-13 株式会社荏原製作所 ポリッシング装置
JPH11333697A (ja) * 1998-05-28 1999-12-07 Nkk Corp Cmp装置のドレッサーシステム
SE517293C2 (sv) * 1999-06-30 2002-05-21 Abb Ab Förfarande och anordning för induktiv mätning av geometrisk dimension och elektrisk egenskap med motriktade magnetfält
JP2001079752A (ja) * 1999-09-08 2001-03-27 Hitachi Ltd 化学的機械研磨装置およびこれを用いた半導体集積回路装置の製造方法
JP2001096455A (ja) * 1999-09-28 2001-04-10 Ebara Corp 研磨装置
US6517414B1 (en) * 2000-03-10 2003-02-11 Appied Materials, Inc. Method and apparatus for controlling a pad conditioning process of a chemical-mechanical polishing apparatus
US6616513B1 (en) * 2000-04-07 2003-09-09 Applied Materials, Inc. Grid relief in CMP polishing pad to accurately measure pad wear, pad profile and pad wear profile
EP1270148A1 (en) * 2001-06-22 2003-01-02 Infineon Technologies SC300 GmbH & Co. KG Arrangement and method for conditioning a polishing pad
JP2003019657A (ja) * 2001-07-06 2003-01-21 Toshiba Corp ドレッシング方法及び研磨装置
TW574085B (en) * 2001-12-27 2004-02-01 Vanguard Int Semiconduct Corp Device and method for measuring and monitoring polishing pad
JP2003200342A (ja) 2001-12-28 2003-07-15 Tokyo Seimitsu Co Ltd ウェーハ加工装置用コンディショナー装置
US6872132B2 (en) * 2003-03-03 2005-03-29 Micron Technology, Inc. Systems and methods for monitoring characteristics of a polishing pad used in polishing micro-device workpieces
KR100630754B1 (ko) * 2005-07-15 2006-10-02 삼성전자주식회사 슬러리 유막 두께 변화량을 이용한 연마패드의 마모 및마찰 측정방법 및 장치
JP2008284645A (ja) * 2007-05-17 2008-11-27 Tokyo Seimitsu Co Ltd 研磨装置および研磨方法

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